Volume 32 (1993)

Part 1: Regular Papers, Short Notes, and Review Papers

No. 1A pp. 1–260 (Jan 15) Invited Revew Paper included
No. 1B pp. 261–691 (Jan 30) Solid State Devices and Materials
No. 2 pp. 693–1030 (Feb 15) Invited Revew Paper included
No. 3A pp. 1033–1333 (Mar 15)
No. 3B pp. 1335–1514 (Mar 30) Nanoscale Science
No. 4 pp. 1515–1873 (Apr 15)
No. 5A pp. 1875–2182 (May 15) Invited Revew Paper included
No. 5B pp. 2183–2576 (May 30) Ultrasonic Electronics
No. 6A pp. 2577–2910 (Jun 15)
No. 6B pp. 2911–3130 (Jun 30) Scanning Tunneling Microscopy
No. 7 pp. 3131–3333 (Jul 15)
No. 8 pp. 3335–3669 (Aug 15)
No. 9A pp. 3671–4041 (Sep 15) Invited Revew Paper included
No. 9B pp. 4043–4392 (Sep 30) Ferroelectric Materials and Their Applications
No. 10 pp. 4393–4855 (Oct 15) Invited Revew Paper included
No. 11A pp. 4857–5184 (Nov 15)
No. 11B pp. 5185–5462 (Nov 30) Optical Memories
No. 12A pp. 5463–5822 (Dec 15)
No. 12B pp. 5823–6297 (Dec 30) MicroProcess

Part 2: Letters

No. 1A/B pp. L1–L155 (Jan 15)
No. 2A pp. L157–L214 (Feb 1)
No. 2B pp. L215–L302 (Feb 15)
No. 3A pp. L303–L360 (Mar 1)
No. 3B pp. L361–L467 (Mar 15)
No. 4A pp. L469–L555 (Apr 1)
No. 4B pp. L557–L632 (Apr 15)
No. 5A pp. L635–L697 (May 1)
No. 5B pp. L699–L754 (May 15)
No. 6A pp. L755–L819 (Jun 1)
No. 6B pp. L821–882 (Jun 15)
No. 7A pp. L883–965 (Jul 1)
No. 7B pp. L967–1029 (Jul 15)
No. 8A pp. L1031–1111 (Aug 1)
No. 8B pp. L1113–1181 (Aug 15)
No. 9A pp. L1183–1292 (Sep 1)
No. 9B pp. L1293–1369 (Sep 15)
No. 10A pp. L1371–1483 (Oct 1)
No. 10B pp. L1485–1580 (Oct 15)
No. 11A pp. L1581–1644 (Nov 1)
No. 11B pp. L1645–1714 (Nov 15)
No. 12A pp. L1715–1780 (Dec 1)
No. 12B pp. L1781–1857 (Dec 15)

Supplement

Suppl. 32-1 Proc. 5th Int. Conf. High Pressure in Semiconductor Physics, Kyoto, 1992
Suppl. 32-2 Proc. 7th Int. Conf. X-ray Absorption Fine Structure, Kobe, 1992
Suppl. 32-3 Proc. 9th Int. Conf. Ternary and Multinary Compounds, Yokohama, 1993