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Jpn. J. Appl. Phys. Vol. 13 (1974)
No. 3, 5 March 1974

393-399 : Periodic Dependence of Gaussian Electronic Stopping Cross Section with Energetic Ions in Solid Targets: Koichi Kanaya and Kiichi Hojou
400-410 : Microstructure in MnAl(r) Alloy Phase: Kentaro Yoshida, Takeshi Yamamoto and Saburo Nagata
411-416 : Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B₂H₆-PH₃-H₂ System: Mitsuharu Takigawa, Makoto Hirayama and Katsufusa Shohno
417-423 : Phase Study on Binary System Ga-Se: Hiromichi Suzuki and Ryûichi Mori
424-428 : Dark and Light Pits in Bismuth Crystals: Shuichi Otake, Shigetoshi Koike and Yoshinobu Motohashi
429-432 : Determination of Elastic Constants of DL-Tris-Ethylenediamine-Cobalt (III) Bromide Trihydrate Crystal by Ultrasonic Method: Hiroyasu Nomura, Masahiro Yoshida, Shigeo Kato and Yutaka Miyahara
433-436 : Dielectric Correlation Studies of Powder and Bulk Materials at Microwave Frequencies: G. P. Srivastava, P. C. Mathur, K. N. Tripathi, Bachchan Singh and A. L. Dawar
437-444 : Protection against Fluorescence Degradation of Polyvinyltoluene Excimer by uv Light: Kazuo Ikezaki
445-450 : Optical and Magneto-Optical Properties of MnBi Films: Sotaro Esho and Morimasa Nagao
451-456 : A-C Susceptibility Measurement of Anisotropic Film by Third Harmonic Frequency Technique: S. K. Dey
457-462 : Measurements of Magnetic Field of Magnetic Recording Head by a Scanning Electron Microscope: Tsutomu Ishiba and Hidetaro Suzuki
463-470 : Vacuum Ultraviolet Emissions from Linear Pinch Rare Gas Plasmas and Their Applications as a Light Source: Kuniya Fukuda, Hidetoshi Suemitsu and Masaharu Ota
471-483 : Detection of Small Amplitude Vibrations by Modulated Reference Wave Holography: Toshinori Nakajima
484-494 : Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs: Takatosi Nakanisi and Masahiro Kasiwagi
495-499 : Electrothermal Effects in Chalcogenide Glass Semiconductors: Koichi Shimakawa, Akira Yoshida and Tetsuya Arizumi
500-503 : Electrical Properties of Chalcogenide Glasses of Te-Se-Ge and Te-Se-Sb Systems: Hideo Sakai, Koichi Shimakawa, Yonekazu Inagaki and Tetsuya Arizumi
504-515 : Small Signal Equivalent Circuit for an MIS Tunnel Diode: Teruaki Katsube, Yoshio Adachi and Toshiaki Ikoma
516-520 : A Velocity Measurement of Flowing Afterglows: Masaaki Nakatani and Noburu Sokabe
521-523 : New Method for Ion Specification in a Steady State Magnetized Plasma: Hussein M. Saad
524-528 : Damage Effects in Silicon Surface Barrier Detectors with 0.5-2 MeV Protons: Shunsuke Nakamoto, Takashi Aoki, Keishi Kawabata, Keizo Norisawa and Masakatsu Sakisaka
529-533 : The Drag of Air Bubbles Rising in Non-Newtonian Liquids: I. C. Macedo and Wen-Jei Yang
534-538 : On Dendritic Structures Caused by Contact between Iron and Silicon below Their Eutectic Temperatures: Nobuo Asahi

Short Notes

539-540 : Freezing Interface and Anomalous Diffusion Layer of Hg_1-xCd_xTe Growing by Zone Leveling: Yoshihiko Takase
541-542 : Temperature Dependence of Electrical Conduction Mechanism in Amorphous Semiconductor: Toshio Takeda, Yukio Akiba, Toru Miyazono and Masamori Iida
543-544 : Variation of the ESR Spectrum of Mn²⁺ in Te₅₅As₃₅Ge_10-xSi_x Glasses with x and Annealing: Minoru Kumeda, Nobuo Kobayashi, Masakuni Suzuki and Tatsuo Shimizu
545-546 : Root Growth of Vapor-Grown Tellurium Whisker Caused by Adding Thallium: Noboru Furuta, Yosio Ohasi and Takashi Shimizu
547-548 : Autodoping Effects near the Interface of CdS-GaAs Junction: Akihiko Yoshikawa and Yoshio Sakai
549-550 : Unusual Features of Field-Ion Microscope Image at 4.2 K: Toshiyuki Adachi, Kazuhito Ohnishi and Shogo Nakamura
551-552 : Damage in the Surface Region of Silicon Produced by Sputter-Etching: Yasuhiro Yamamoto, Kazuyoshi Shinada, Tadatsugu Itoh and Kazuo Yada
553-554 : Gd- and Zr-Substituted Ca-V Garnets: Yasuhiko Machida, Haruo Saji and Tokio Yamadaya
555-556 : Ferrimagnetic Resonance Linewidth of Ti-Substituted Ca-V Garnet: Yasuhiko Machida, Yasuhiko Nakayama, Haruo Saji, Tokio Yamadaya and Mitsuru Asanuma
557-558 : Speckle Noise Reduction by Random Phase Shifters: Masaru Matsumura
559-560 : Frequency Color Display by Nematic Liquid Crystals: Susumu Sato and Masanobu Wada
561-562 : Electron Mobility in In_1-xGa_xAs Epitaxial Layer: Takashi Katoda, Fukunobu Osaka and Takuo Sugano
563-564 : Hot Implantation of Nitrogen Ions into GaAs_1-xP_x (x=0.36): Yunosuke Makita, Shun-ichi Gonda, Hisao Tanoue, Toshio Tsurushima and Shigeru Maekawa
565-566 : Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_1-xP_x (x=0.36): Yunosuke Makita and Shun-ichi Gonda
567-568 : Multiplication Phenomenon in Silicon Detectors Irradiated with 0.5-1.5 MeV Electrons: Shunsuke Nakamoto and Takashi Aoki
569-570 : Adding Effect of Xylene in TEA Double Discharge CO₂ Laser: Chobei Yamabe, Eiji Setoyama, Masahiro Yokoyama and Chiyoe Yamanaka
571-572 : Confining Phenomena of Negative Glow Observed in Hollow-Cathode Laser Tubes: Kan-ichi Fujii
573-574 : Transition Mechanism from Townsend Discharge to Normal Glow Discharge: Kan-ichi Fujii
575-576 : Spectral Behaviors of Spontaneously Pulsing Double-Heterostructure Injection Lasers: Naoki Chinone and Ryoichi Ito
577-578 : Current Distribution in a Multi-Trigger Gap: Katsuji Shimoda, Sohji Sakata and Katsumi Hirano
579-579 : Effect of High Pressure on the Lattice Constants of FeS₂ and CoS₂ Having Pyrite Structure: Akira Sawaoka, Katsuhiko Inoue and Shinroku Saito
580-580 : Memory Effects of CdIn₂S₄ Single Crystal: Masakazu Ueno, Saburo Endo and Taizo Irie

Errata

581A-581A : Undoped n-Type GaSb Grown by Liquid Phase Epitaxy: Hidejiro Miki, Kazuaki Segawa and Keiji Fujibayashi
581B-581B : Thermally Stimulated Capacitance and Thermally Stimulated Current in a p-n Junction with Generation-Recombination Centers: Kazuo Sakai, Yoshio Adachi and Toshiaki Ikoma

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