Table of Contents
Jpn. J. Appl. Phys. Vol. 19 (1980)
No. 4, 5 April 1980
583-589 : Crystal Defects of Silicon Films Formed by Molecular Beam Epitaxy
Hideo Sugiura and Masafumi Yamaguchi
591-596 : Electrical and Galvanomagnetic Properties of Te Films
B. Chakrabarti and A. K. Pal
597-606 : A New Method for Determining the Trap Depth from Thermally Stimulated Current
Shigeyoshi Maeta and Kiyokazu Sakaguchi
607-613 : Polarization Anomalies of Concave Gratings
Kunimi Saito and Takeshi Namioka
615-621 : Lineshapes in Three-Level Spectroscopy with an Intense Laser Field
Motowo Tsukakoshi and Koichi Shimoda
623-626 : Magneto-Resistance Effect of Ni3Fe Single Crystals
Toshio Mizorogi, Yoshiaki Matsuo and Takeharu Minegishi
627-637 : Fuzzy Walls during Bubble Expansion in Bubble Garnet Films
Takao Suzuki, Laci Gál and Sadamichi Maekawa
639-646 : A SQUID Magnetometer for Simultaneous Measurements of Spontaneous Magnetization and AC Susceptibility around the Magnetic Phase Transition Point
Mamoru Ishizuka and Yasuto Tohi
647-652 : On the Wave Propagation in an Inhomogeneous Medium
Kenji Kojima
653-658 : A Two-Color Display Device Utilizing Field-Induced Pitch Contraction in Cholesteric Liquid Crystal with Negative Dielectric Anisotropy
Hidetoshi Miike, Takehito Yamada and Yoshio Ebina
659-663 : Dynamic Properties of Twisted Nematic Liquid Crystal Cells
Fumio Nakano, Hideaki Kawakami, Hirosada Morishita and Mikio Sato
665-673 : Current Transport in Doped Polycrystalline Silicon
Mitsuhiro Taniguchi, Masataka Hirose, Yukio Osaka, Seiichi Hasegawa and Tatsuo Shimizu
675-678 : Photoresponse of Al-Amorphous Ge-nSi Systems
M. Misra and N. P. Sinha
679-686 : Electroluminescence Study on the Semiconducting-Oxide Anodes in Aqueous Electrolytes
Hiroshi Morisaki, Hiroyasu Kitada and Kazuhiko Yazawa
687-691 : Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
Yoshifumi Takanashi and Yoshiji Horikoshi
693-701 : Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
Yoshifumi Takanashi, Minoru Kawashima and Yoshiji Horikoshi
703-712 : Screen Printed Thin Film CdS/CdTe Solar Cell
Nobuo Nakayama, Hitoshi Matsumoto, Akihiko Nakano, Seiji Ikegami, Hiroshi Uda and Toshio Yamashita
713-718 : Length Measurement of Gauge Blocks Using a 3.39 µm He-Ne Laser Interferometer
Hirokazu Matsumoto
719-723 : Measurement of Ion Temperature of a Plasma in Magnetic Field with a Gridded Probe
Shigeyuki Ishii and Syoichi Miyoshi
725-732 : A Range Measurement of Low Energy Electrons Using Radioisotope Auger Electrons
Chizuo Mori, Hiroshi Noguchi, Morishige Mizuno and Tamaki Watanabe
733-736 : Dechannelling of Energetic Charged Particles at Dislocations in An-Ag Solid Solution
Kenji Kimura, Michihiko Mannami, Akira Kyoshima and Mitsuyoshi Matsushita
737-744 : Experimental Results on SAW Filters with One Bidirectional and Two Unidirectional Transducers
Masahide Tsukamoto
745-749 : Compact and Highly Efficient Faraday Rotators Using Relatively Low Verdet Constant Faraday Materials
Toshihiko Yoshino
751-752 : Extension of Alternative Method to Solve Space-Charge-Flow Problem for Concentric Spheres
Shigeki Miyajima and Ichizo Ninomiya
753-754 : On the Ultrasonic Wave-Introduced Crystal Pulling Method(Short Note)
Masashi Kumagawa, Hiroshi Oka, Nguyen V. Quang and Yasuhiro Hayakawa
755-756 : Crystal Growth of SiAs(Short Note)
Ichiro Sudo
757-758 : Interface Properties of a Vacuum-Evaporated-SiOx(1∼2)/GaAs System Detected by Surface Acoustic Wave(Short Note)
Tomoyasu Hiramatsu, Shigeru Kuroda, Hideki Goto and Morihiko Kimata
759-760 : Direct Observation of the Epitaxial Growth Phenomenon of Cesium on a Tungsten Emitter with a Field Emission Microscope(Short Note)
Tsukasa Kuroda
761-762 : Neutralization of Ion Beam on Semiconductive BaTiO3 Ceramic Surface(Short Note)
Kaoru Ohya, Akinori Tezuka and Ichiro Mori
763-764 : Characteristics of Thermionic Emission Type Cs Ion Source in SF6 Molecular Gas(Short Note)
Kouzi Matsunaga and Jun-ichi Kodaira
765-766 : Photoconduction in Polyethylene under Vacuum-Ultraviolet Range(Short Note)
Isamu Kitani, Katsumi Yoshino and Yoshio Inuishi
767-768 : The Correlation of Transient Electric Current with Free Radicals in Plasma Polymerized Styrene(Short Note)
Shuhei Nakamura, Sanshiro Yamanaka, Shinji Yamaguchi and Goro Sawa
769-770 : Impurity Effect on Dielectric Properties of Polypropylene(Short Note)
Tokihiro Umemura, Tsunetoshi Kashiwazaki and Toshio Suzuki
771-772 : Sintering Pb(Zr, Ti)O3 Ceramics at Low Temperature(Short Note)
Sadayuki Takahashi
773-774 : Comparison of Etch Pits and V-I Characteristics in n-GaAs {100} Crystals(Short Note)
Kunihiko Takahashi
775-776 : Electron Concentration Changes in High Purity GaAs Grown by Liquid Phase Epitaxy(Short Note)
Kunihiko Takahashi
777-778 : Influence of Oxygen on Free Radicals in Plasma Polymerized Styrene(Short Note)
Shuhei Nakamura, Sanshiro Yamanaka, Shinji Yamaguchi and Goro Sawa
779-780 : PH3 Concentration Measurements by Vacuum Ultraviolet Absorption Spectroscopy(Short Note)
Noriaki Honma, Isao Sugaya and Katsumi Takami
781-782 : Comments on “Second-Order Effect of a High-β Tokamak Equilibrium”(Short Note)
W. Schuurman and C. Bobeldijk
L171-L173 : Electrostriction and Its Interrelation with Other Anharmonic Properties of Materials
Kenji Uchino and Leslie E. Cross
L174-L176 : High Power Ion-Irradiation Test for CTR First Walls
Akihiro Mohri, Kazumichi Narihara, Yukihiro Tomita, Tetsuya Tsuzuki, Zenzaburo Kabeya, Kenya Akaishi and Akira Miyamara
L177-L180 : Frame Transfer CCD Imager with Transparent Electrodes
Nozomu Harada, Nobuo Suzuki, Okio Yoshida, Kensaku Yano and Hiroshi Morita
L181-L184 : Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams
Isao Yamada, Frans W. Saris, Toshinori Takagi, Kakuei Matsubara, Hiroshi Takaoka and Satoshi Ishiyama
L185-L188 : Polarization of Undulator Radiation
Hideo Kitamura
L189-L192 : Diffusion Limited Transient Response of Heterojunction Photodiodes
P. Poulain and B. de Cremoux
L193-L196 : A Study on the Rectifying Contacts in Metal(I)/As2Se1Te2/Metal(II) Structures
Shuichi Okano, Kouichi Nishijima and Masakuni Suzuki
L197-L200 : ESR in Hydrogenated Amorphous Silicon
Minoru Kumeda and Tatsuo Shimizu
L201-L204 : Signal Processing of Convergent-Beam Electron Diffraction Patterns Obtained by the Beam-Rocking Method
Michiyoshi Tanaka, Katsuyoshi Ueno and Yoshihiro Hirata
L205-L206 : Very-Small Angle X-Ray Scattering from Amorphous Silica before and after Thermal Neutron Irradiation
C. K. Suzuki, K. Doi and K. Kohra
L207-L210 : Lattice-Matched LPE Growth of In1-xGaxP1-yAsy Layers on (100) GaAs Substrates
Akira Suzuki, Hakaru Kyuragi, Shigeo Matsumura and Hiroyuki Matsunami
L211-L214 : Optical Nutation Echoes in Ruby
Takao Muramoto, Shunsuke Nakanishi, Osamu Tamura and Tsuneo Hashi
L215-L217 : Estimation of the Cooling Efficiency of HgCr2S4 near 60 K as a Magnetic Refrigerant
Takasu Hashimoto, Tomio Ikegami and Toshihiro Okada
L218-L220 : InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region
Haruo Nagai, Yoshio Noguchi, Kenichiro Takahei, Yoshio Toyoshima and Genzo Iwane
L221-L224 : Parabolic Behavior of Melting and Boiling Points versus Coulomb Potential in Ionic Substances
Tetsur\=o Nakamura and Yoshiki Takagi
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Copyright (C) 1980 Publication Board, Japanese Journal of Applied Physics