Table of Contents
Jpn. J. Appl. Phys. Vol. 19 (1980)
No. 9, 5 September 1980
1583-1590 : Amorphous GaAs Films by Molecular Beam Deposition
Nobuo Matsumoto and Kenji Kumabe
1591-1602 : Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in Silicon
Seiji Kawado
1603-1610 : Formation of Ultrafine Metal Particles by Gas-Evaporation VI. Bcc Metals, Fe, V, Nb, Ta, Cr, Mo and W
Yahachi Saito, Kazuhiro Mihama and Ryozi Uyeda
1611-1615 : Infrared and X-Ray Observation of Copper Extraction from Copper Decorated Dislocations in Silicon Crystal
Hiroshi Kimura and Takashi Iizuka
1617-1625 : Plastic Deformation in Highly-Concentrated KCl-KBr Solid Solution Single Crystals from 1.6 K to 923 K
Masao Sakamoto and Tomoharu Yamada
1627-1632 : Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment
Motohiro Iwami, Su Chol Kim, Yoshihide Kataoka, Takeshi Imura, Akio Hiraki and Fuminori Fujimoto
1633-1639 : Identification of Photochromic Absorption in KTaO3 Doped with Ni and Fe
Yukikuni Akishige and Kikuo Ohi
1641-1645 : Second Harmonic Generation of Epitaxially-Grown GaN Crystal
Takeo Ishidate, Kuon Inoue and Masaharu Aoki
1647-1653 : Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu,Al Phosphor
Shigeo Kuboniwa, Hiroji Kawai and Teruhiko Hoshina
1655-1662 : Temperature Dependence of the Delayed Fluorescence Lifetime in Anthracene Crystals with Triplet Exciton Traps
Kohei Yokoi and Yujiro Ohba
1663-1665 : Effect of Ar Pressure on Sputtered Amorphous GdCo Thin Films
Yuji Togami, Kikuo Kobayashi and Izumi Yanagida
1667-1674 : Low-Frequency Photocurrent Oscillations in CdIn2S4 Single Crystals
Yasukazu Seki, Saburo Endo and Taizo Irie
1675-1682 : Electrical Characteristics of Depletion-Type SOS MOS Devices
Shinji Onga, Wen H. Ko, Katsunori Hatanaka and Shinji Kawaji
1683-1688 : Wavelength Measurement of an H2CO-Stabilized He-Xe Laser at 3.51 µm
Toshiharu Tako, Motoichi Ohtsu, Seiichi Katsuragi, Misao Ohi and Yoshiaki Akimoto
1689-1694 : Constant Current Characteristics in White Light Lasers
Kan-ichi Fujii and Tsutomu Takahashi
1695-1702 : Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
Akio Sasaki, Masahiro Nishiuma and Yoshikazu Takeda
1703-1710 : Use of a Hollow Cathode in a DuoPIGatron Hydrogen Ion Source
Shigeru Tanaka, Hiroaki Morita and Junji Sakuraba
1711-1728 : Fast Compressional Alfvén Waves in a Tokamak
Hironori Takahashi
1729-1736 : Equilibrium Plasma Position Control for a Large Tokamak Using Modern Control Theory
Kohyu Fukunishi, Seiji Saito, Atsushi Ogata and Hiromasa Ninomiya
1737-1743 : Metal Impurity Injection into DIVA Plasma with a Q-Switched Laser Beam
Toshihiko Yamauchi, Masayuki Nagami and Seio Sengoku
1745-1750 : Multiply-Charged Metal Ion Source for Cyclotron
Kumio Ikegami, Tadashi Kageyama and Isao Kohno
1751-1756 : Microprocessor-Controlled Multi-Channel High-Voltage Regulator System
Masatosi Imori, Itsuo Shibata and Fumio Shimokoshi
1757-1762 : X-Ray Diffraction Profile Analysis for the Determination of the Crystal Structure of BaTiO3
Masahiro Tanaka, Hideshi Fujishita, Y\=oichi Shiozaki and Etsuro Sawaguchi
1763-1769 : Melting and Solid-Solid Transition of Polyethylene under Pressure
Masamichi Hikosaka, Shigeru Minomura and Tsuneo Seto
1771-1779 : Theoretical Study of Josephson Junction with Double Barriers
Masanori Sugahara
1781-1787 : Effects of Ambient Gases on Surface Profile and Related Properties of Amorphous Alloy Ribbons Fabricated by Melt-Spinning
Makoto Matsuura, Makoto Kikuchi, Masaaki Yagi and Kenji Suzuki
1789-1790 : Heat Treatment of Zn-Doped p-Type InP(Short Note)
Kotaro Tsubaki and Koichi Sugiyama
1791-1792 : Dependence of Wall Movement of Bubbles on Crystallographical Directions in YFeO3 Single Crystals(Short Note)
Minoru Takahashi, Hiroyuki Tamura and Takao Suzuki
1793-1794 : DLTS Measurement on Non-Ohmic Zinc Oxide Ceramic Varistor(Short Note)
Nobuaki Shohata, Takao Matsumura and Tomeji Ohno
1795-1796 : Effect of CW-Laser Irradiation on Interface Properties of Anodized GaAs-MOS(Short Note)
Chouho Yamagishi, Akihiro Moritani and Junkichi Nakai
1797-1798 : Proximity Effect in an EB Lithographic System Using a Field Emission (FE) Electron Gun(Short Note)
Sumio Hosaka, Mikio Ichihashi, Hajime Hayakawa, Sadaaki Nishi and Masatoshi Migitaka
1799-1800 : A New Optical Sensor for Measurement of the Mercury Levels of a U-Manometer(Short Note)
Hiroshi Kobayashi
1801-1802 : Fine-Structure Splitting in ν4 of CF4 Measured by Tunable Diode Laser(Short Note)
Hideaki Niki, Yasukazu Izawa and Chiyoe Yamanaka
1803-1804 : Raman Scattering in Amorphous (As2Se3)1-x(Sb2Se3)x System(Short Note)
Michio Kato, Seinosuke Onari and Toshihiro Arai
1805-1806 : A Convenient Technique for Shock-Pressure Measurements Using a Manganin Gauge(Short Note)
Yoshimasa Yasumoto, Ken-ichi Kondo and Akira Sawaoka
1807-1808 : Substrate Bias Effect on the Oxygen Contamination in Amorphous GdCo Sputtered Films(Short Note)
Masatoshi Ohkoshi, Ryoji Ohkata, Koji Inoue, Shigeo Honda and Tetsuzo Kusuda
1809-1810 : Present Status of ESR Dating: Reply to Nambi's Comment(Short Note)
Motoji Ikeya and Toshikatsu Miki
Errata
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1811-1811 : The Simulated and Observed Structuse of a Σ=11 Tilt Boundary in Gold and the Vibration of Individual Atoms at the Grain Boundary
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Minoru Hashimoto, Hideki Ichinose, Yoichi Ishida, Ryoichi Yamamoto and Masao Doyama
L505-L508 : LPE Growth and Luminescence of In1-xGaxPyAs1-y on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV
Seiji Mukai, Masatoshi Matsuzaki and Jun'ichi Shimada
L509-L512 : Long-Lived Electron-Beam-Pre-Irradiation Effect in a Compact SF6/H2 Laser
Hidenori Matsuzawa and Shinji Suganomata
L513-L516 : The Density of Localized States in Amorphous InxSe1-x Thin Films
Hiroyoshi Naito, Masahiro Okuda, Tatsuhiko Matsushita and Tanehiro Nakau
L517-L518 : Photo-Electrochemical Effects of WO3 Electrochromic Devices
Kazusuke Yamanaka
L519-L522 : Study of Photo-Induced Effect in Obliquely-Deposited Amorphous Ge-Se Films by XPS
Tokihiro Ueno and Akira Odajima
L523-L526 : Impurities in Thin Films Produced by Ion Beam Sputtering
R. S. Bhattacharya
L527-L530 : Molecular Orbitals for Chemisorption of Sulfur on Copper
Hirohiko Adachi
L531-L533 : Reaction at Fe-Sn Interface Studied by Mössbauer Spectroscopy
Teruya Shinjo, Nobuyoshi Hosoito, Shiro Hine and Toshio Takada
L534-L536 : Comparison of Efficiencies of Electrostatic Wave-Excitation by Far-Infrared Laser Beam and Ion Beam
Takashige Tsukishima
L537-L540 : Emission Characteristics for 〈100〉, 〈110〉 and 〈111〉 LaB6 Cathodes
Tadahiro Takigawa, Shintaro Yoshii, Isao Sasaki, Kakuju Motoyama and Takashi Meguro
L541-L543 : Frequency Stabilization of a PbSnTe Laser on a Methane Line in the v4 Band
Misao Ohi
L544-L546 : Oxygen-Related Donors Generated at 800°C in CZ-Si
Kiyoshi Yasutake, Masataka Umeno, Hideaki Kawabe, Hiroshi Nakayama, Taneo Nishino and Yoshihiro Hamakawa
L547-L550 : Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
Hiroshi Nakayama, Johji Katsura, Taneo Nishino and Yoshihiro Hamakawa
L551-L554 : InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
Takashi Fukui and Yoshiji Horikoshi
L555-L558 : Dielectric Constant of Amorphous PbTiO3
Masaaki Takashige, Terutaro Nakamura, Noboru Tsuya, Ken Ichi Arai, Haruo Ozawa and Ryosei Uno
L559-L561 : A New Evidence in the ESR Spectra of the Incommensurate Phase of Bis(p-Toluene Sulfonate) Ester of 2,4-Hexadiyne-1,6-Diol
Minoru Fukui, Satoshi Sumi, Ichiro Hatta and Ryuji Abe
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Copyright (C) 1980 Publication Board, Japanese Journal of Applied Physics