Table of Contents
Jpn. J. Appl. Phys. Vol. 20 (1981)
No. 6, 5 June 1981
Invited Review Paper
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1007-1020 : Modelocking of Semiconductor Laser Diodes
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H. A. Haus
1021-1025 : Measurement of Collision Broadening of Resonance Lines of Calcium Ion by a Low-Resolution Spectrometer
Yoshio Urano, Mikio Monju, Hiroshi Harima and Kunihide Tachibana
1027-1036 : The Physics of the Retrograde Motion of the Electric Arc
Michel G. Drouet
1037-1040 : Migration Energy of Vacancies in Bismuth
Shuichi Otake, Yoshinobu Ishii and Naoshi Matsuno
1041-1045 : Dendritic Structures Developed on Fe-FeSi Eutectic Thin Films below the Eutectic Point
Nobuo Asahi
1047-1053 : Surfaces of Vacuum-Deposited Silicon Oxide Films Studied by Auger Electron Spectroscopy
Kunisuke Maki and Yukichi Shigeta
1055-1058 : Factorial Moment of Two Poissonian Lights Superposed on Gaussian-Lorentzian Light
Hideaki Sato and Norihito Suzuki
1059-1064 : Compensation Effect in the Electrical Conduction Process in Some Nitroaromatic Semiconductors
Alpana Ghosh, Kapur Mal Jain, Biswanath Mallik and T. N. Misra
1065-1068 : Measurement of Ferroelectric Polarization along Critical Isotherm
Kiyoyasu Imai
1069-1072 : Thermoluminescence of KBr: Tl around Room Temperature
R. V. Joshi and R. T. Chaudhari
1073-1084 : Dynamics of an Isolated Stripe Domain in Bubble Film
Satoshi Iwata, Shigeru Shiomi and Susumu Uchiyama
1085-1094 : Electrical and Optical Studies in Gallium Antimonide
Kenshiro Nakashima
1095-1105 : Simple Analytical Explanation of Transient Switching Process in Amorphous Semiconductor, As30Te48Ge10Si12
Toru Miyazono and Masamori Iida
1107-1112 : Surface Band Bending Effects on Photoluminescence Intensity in n-InP Schottky and MIS Diodes
Koushi Ando, Akio Yamamoto and Masafumi Yamaguchi
1113-1116 : Photoluminescence Measurements for Cd-Diffused InP p-n Junction
Ken-ichi Ohtsuka, Yoshimitsu Yamazoe, Taneo Nishino and Yoshihiro Hamakawa
1117-1119 : Electrical Properties of (La1-xSrx)FeO3 (0=<x=<0.5) under Various Relative Humidities
Hideki Taguchi and Yuzuru Takahashi
1121-1127 : Ion Implantation Masking Ability Degradation in High Temperature Annealed Mo Film
Tadatoshi Nozaki, Hidekazu Okabayashi and Kohei Higuchi
1129-1133 : A Picosecond Optical Gate Using Photo-Induced Grating
Akihiro Morimoto, Tetsuro Kobayashi and Tadasi Sueta
1135-1144 : Effects of End Plugs on Electric Input Power for Theta Pinch Plasmas
Kenji Ebihara
1145-1152 : Gloss Measurement on Painted Surfaces
Morihiro Matsuta and Tsuyoshi Kubota
1153-1159 : Pinning Force of a Nonideal Superconductor Containing Pins with Large Interaction Forces. I. High Pin Density
Teruo Matsushita
1161-1162 : Estimation of the Effective Surface Resistance of a Rugged Metal Wall as a Simulation of Fusion Reactor First Walls(Short Note)
Motoi Mushiaki, Kouzi Matsunaga and Akira Miyahara
1163-1164 : Crystallization of Flash Evaporated Thin Films of InSe(Short Note)
Hidenori Hashimoto, Hideki Nishimura and Hiromichi Suzuki
1165-1166 : Laser Scattering Diagnostics of an Atmospheric Impulse Arc(Short Note)
Kiichiro Uchino, Katsunori Muraoka and Masanori Akazaki
1167-1168 : Photoluminescence Spectra in ZnSiP2 Crystals(Short Note)
Hideki Nishida, Kenji Okamura, Megumi Kinoshita, Tsuguru Shirakawa and Junkichi Nakai
1169-1170 : Vapor Growth of Te-Doped GaxAl1-xSb on GaSb(Short Note)
Jingxiang Shen, Noboru Kitamura, Masahiro Kakehi and Takao Wada
1171-1172 : Thermally Stable Metallization to InSb(Short Note)
Kouki Nagahama, Kazuo Nishitani and Makoto Ishii
1173-1174 : Required Donor Density of Epitaxial Layers for AlxGa1-xSb Avalanche Photodiodes(Short Note)
Yoshifumi Takanashi and Yoshiji Horikoshi
1175-1176 : CW 4.55 and 5.96 µ m Atomic Oxygen Laser Lines in Water Vapor Discharge(Short Note)
Atsuo Morinaga and Keiichi Tanaka
1177-1178 : Development of Local Potential Step in DC Discharge by Streaming Instability(Short Note)
Yoshito Sonoda, Kazuto Maeyama, Katsunori Muraoka, Yukio Watanabe and Masanori Akazaki
1179-1180 : Simple Method of Gain Measurement in Hollow-Cathode 4924 Å He-Zn Laser(Short Note)
Tetsuo Iijima and Yoshihiko Sugawara
1181-1182 : Double-Beaming of the Far-Infrared Fourier Spectrometer(Short Note)
Atsuo Kitade and Kunio Yoshihara
L381-L384 : Two-Dimensional Antiphase Structures of the 2d-Cu3Pd Type Studied by High Voltage, High Resolution Electron Microscopy
Osamu Terasaki and Denjiro Watanabe
L385-L388 : Backscattered Electron Signal from Alignment Mark: Experiment and Simulation
Hiroyuki Shiraki and Nao-aki Aizaki
L389-L391 : Relaxation of Amorphous Gd-Co Films through Electrical Resistivity Measurement
Masako Kajiura, Yuji Togami, Kikuo Kobayashi and Teruo Teranishi
L392-L394 : Infrared Power Delivery in the 2.7 µm Band in Fluoride Glass Fiber
Kaname Jinguji, Masaharu Horiguchi, Seiko Mitachi, Terutoshi Kanamori and Toyotaka Manabe
L395-L398 : Transient Temperature Variation of Injection Lasers
Masuo Suyama, Nagaatsu Ogasawara and Ryoichi Ito
L399-L402 : 19F and 1H NMR and ESR in a-Si:F:H and a-Si:H
Shoichi Ueda, Minoru Kumeda and Tatsuo Shimizu
L403-L406 : Frequency Stabilization of AlGaAs DH Lasers
Hidemi Tsuchida, Motoichi Ohtsu and Toshiharu Tako
L407-L410 : Experiment on the Extraction of Microwave Pulses from a Superconducting Cavity
Kazuo Minami
L411-L413 : Chemical and Physical Sputtering in F+ Ion Beam Etching of Si
Shin'ichi Tachi, Kiyoshi Miyake and Takashi Tokuyama
L414-L416 : Switcing Characteristics of Amorphous-Silicon Field-Effect-Transistors
Masakiyo Matsumura and Masatoshi Kawashima
L417-L419 : ELS Study of Amorphous Si(Substrate)-SiO2(Film Overlayer) System with Varying Primary Electron Energy
Toshimichi Ito, Yoshihide Kataoka, Motohiro Iwami and Akio Hiraki
L420-L422 : Direct Atomic Site Determination of Foreign Atoms in a Crystal Surface Layer by X-Ray Photoelectron Diffraction
Yoshimasa Nihei, Masanori Owari, Masahiro Kudo and Hitoshi Kamada
L423-L425 : Photoluminescence Associated with Nitrogen in Silicon
Michio Tajima, Tsumoru Masui, Takao Abe and Tadashi Nozaki
L426-L428 : Anomalous Magneto-Optical Kerr Rotation in Sr2FeMoO6
Keiji Shono, Masanori Abe, Manabu Gomi and Shoichiro Nomura
L429-L432 : Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
Miyoko Oku Watanabe, Atsushi Tanaka, Takatosi Nakanisi and Yasuhito Zohta
L433-L436 : A Surface-Acoustic-Wave Continuously-Variable Delay Device with One Unidirectional and Two Uniform Transducers
Makoto Hirabayashi
L437-L438 : Electron-Beam Evaporated Amorphous Silicon Multiple Cascade Solar Cells
C. C. Schubert, P. H. Fang and J. H. Kinnier
L439-L442 : Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
Akihisa Matsuda, Toshihiko Yoshida, Satoshi Yamasaki and Kazunobu Tanaka
L443-L446 : Galvanomagnetic Study of 2-Dimensional Electron Gas in AlxGa1-xAs/GaAs Heterojunction FET
Shin-ichiro Narita, Shojiro Takeyama, Wen Bin Luo, Satoshi Hiyamizu, Kazuo Nanbu and Hisao Hashimoto
L447-L450 : Magnetoconductance Investigations of AlxGa1-xAs/GaAs Heterojunction FET in Strong Magnetic Fields
Shin-ichiro Narita, Shojiro Takeyama, Wen Bin Luo, Satoshi Hiyamizu, Kazuo Nanbu and Hisao Hashimoto
L451-L454 : Frequency-Locking of a GaAlAs Laser to a Doppler-Free Spectrum of the Cs-D2 Line
Tsutomu Yabuzaki, Akira Ibaragi, Hirokazu Hori, Masao Kitano and Toru Ogawa
L455-L458 : The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Satoshi Hiyamizu, Toshio Fujii, Takashi Mimura, Kazuo Nanbu, Junji Saito and Hisao Hashimoto
L459-L461 : Coherent Oscillation of Domains of Nematic Liquid Crystals in a DC Electric Field
Shoji Hirata and Toshiharu Tako
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Copyright (C) 1981 Publication Board, Japanese Journal of Applied Physics