Table of Contents
Jpn. J. Appl. Phys. Vol. 20 (1981)
No. 7, 5 July 1981
1183-1189 : Determination of the Atomic Scattering Factors of Germanium by Means of the Pendellösung-Beat Measurement Using White Radiations
Toshihiko Takama and Shin'ichi Sato
1191-1199 : Formation and Recovery of Defects in Quenched β-Brass
Hiroyuki Yamaguchi, Shuichi Ishii, Yukiyoshi Nakane and Sho Yoshida
1201-1210 : TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
Osamu Ueda, Satoshi Komiya, Shigenobu Yamakoshi and Tsuyoshi Kotani
1211-1218 : Causes of Thickness Non-Uniformity in Silicon Ribbon Crystals
Ekyo Kuroda, Masatoshi Matsuda and Michiyoshi Maki
1219-1224 : Capacitive Humidity Element Using Polystyrene Thin Films Formed by Plasma Polymerization
Shinnichi Takeda
1225-1233 : Investigation on Auger Line Shapes of Sulfur in Different Chemical Environments
Tadao Miura
1235-1239 : Experimental Approach for LVV Auger Spectra of Sulfur in Some Sulfate Salts
Tadao Miura
1241-1247 : Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
Hiroji Kawai and Teruhiko Hoshina
1249-1253 : Grain Structure and Magnetic Anisotropy of Fe Film Evaporated Obliquely from Two Sources
Susumu Keitoku and Kazue Nishioka
1255-1263 : Use of Mass Spectra for End Point Detection in Etching SiO2 Films on Si
Masaharu Oshima
1265-1269 : Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
Junji Takayama, Koichi Shimomae and Chihiro Hamaguchi
1271-1278 : InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
Yoshifumi Takanashi and Yoshiji Horikoshi
1279-1288 : Gain Calculation of Undoped GaAs Injection Laser Taking Account of Electronic Intra-Band Relaxation
Minoru Yamada and Hisanori Ishiguro
1289-1293 : Spectroscopy of Laser Scattered Light by Eye Lens
Hideaki Sato, Norihito Suzuki and Hajime Nakatani
1295-1298 : Transverse Bunched Beam Instability in KEK Booster
Toshio Kasuga, Tadamichi Kawakubo, Shigeru Takeda, Hirohiko Someya and Masaaki Suetake
1299-1304 : Metal Impurity Behaviour in DIVA Determined Using a Blow-Off Technique
Toshihiko Yamauchi, Seio Sengoku, Masayuki Nagami, Hikosuke Maeda, Satoshi Kasai, Tatsuo Sugie, Haruyuki Kimura and Tohru Matoba
1305-1309 : Etched Profile of Si by Ion-Bombardment-Enhanced Etching
Kazuyuki Moriwaki, Hiroaki Aritome and Susumu Namba
1311-1317 : Effects of Magnetic Field and Injected Current on dc SQUIDs with Dayem Bridges
Takafumi Aomine, Kazuo Mizuno, Kazuo Miyake, Kazuhiro Matsuo, Shigeru Kusunoki and Mutsuo Hidaka
1319-1320 : A New Electrochromic Material: 1,4-Benzoquinone in a Non-Aqueous Solution(Short Note)
Masaaki Yashiro and Kazuo Sato
1321-1322 : Anomalous Specific Heat of Silver Chloride Crystals Doped with Sulphur(Short Note)
Sanemi Sonoike, Norio Akiyama, Hisashi Fukuda and Toshio Nagashima
1323-1324 : Phase Inversion of Shubnikov-de Haas Oscillation in Bismuth(Short Note)
Mitsuru Suzuki, Hiroshi Bando and Kokichi Oshima
1325-1326 : Compression Limitation of an Elliptic Pinch Plasma with Surrounding Force-Free Current Layer(Short Note)
Kiyoshi Hayase
1327-1328 : Potential Distributions in a Single-Turn Theta Pinch Coil(Short Note)
Nobunao Takeuchi and Keiichiro Sugita
1329-1330 : A Method to Prepare Thin and Flat Metallic Crystal Plates with Low Dislocation Density(Short Note)
Osamu Nittono, Masahiko Hyugaji and Sigemaro Nagakura
1331-1332 : An Infrared Fourier Spectrometer Usable over a Wide Spectral Region(Short Note)
Atsuo Kitade and Kunio Yoshihara
1333-1334 : The Hall Measurement of Heat-Treated CuInSe2(Short Note)
Hiroshi Takenoshita and Tanehiro Nakau
1335-1336 : Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method(Short Note)
Koushi Ando and Masafumi Yamaguchi
1337-1338 : The Influence of Boron Concentration in P-Emitter Region on Characteristics of a Thyristor(Short Note)
Akiharu Tada and Tsutomu Nakagawa
1339-1340 : Modified Double-Grating Grazing Incidence Pulsed Dye Laser(Short Note)
Seishiro Saikan, Junko Sei and Masashi Kiguchi
1341-1342 : Use of Tunnel Diode for RF-SQUID Detection System(Short Note)
Shun-ichi Kobayashi, Fumio Komori and Wataru Sasaki
1343-1344 : High Surface Ordering of Nematic Liquid Crystal Using Periodicity Grating(Short Note)
Akihiko Sugimura, Nobuyuki Yamamoto and Takao Kawamura
1345-1346 : Flexible Infrared-Transmissive Plastic Waveguides Coated with Evaporated Aluminum(Short Note)
Tomoshi Matsushima, Ichiro Yamauchi and Tadasi Sueta
L463-L466 : Rotation of the Electric Vector of the Polarized X-Rays by Diffraction in Crystals
Shoichi Annaka, Kazutake Kohra and Masami Ando
L467-L469 : Preparation of Perpendicular Magnetic Co-Cr Films by Vacuum Evaporation
Yasushi Maeda, Shigeru Hirono and Shizuka Yoshii
L470-L472 : New Type Hollow Cathode Discharge Tube with Continuously Variable Voltage
Tetsuo Iijima
L473-L476 : Effects of Foreign Gases on the KrF Laser Spectra
Midori Shimauchi
L477-L480 : Model for Cannonball-Like Acceleration of Laser-Irradiated Targets
Hiroshi Azechi, Noriaki Miyanaga, Shuji Sakabe, Tatsuhiko Yamanaka and Chiyoe Yamanaka
L481-L484 : Annealing of Self-Interstitials in Germanium
Noboru Fukuoka, Haruo Saito and Hiroyuki Yoshida
L485-L487 : Effects of rf-Bias on Properties of Sputtered Silicon Films
Masakuni Suzuki, Toshikazu Maekawa, Shuichi Okano and Tsutomu Bandow
L488-L490 : 1.55 µm GaInAsP/InP Distributed Feedback Lasers
Osamu Mikami
L491-L494 : A Consideration of the Chemical Shift in ESCA Spectra from Oxide/Semiconductor Interface
Yusuke Mizokawa, Hiroshi Iwasaki and Shogo Nakamura
L495-L497 : Heavy Wall Bubble
Susumu Konishi and Shohichi Shimaya
L498-L500 : Calibration of Gravitational Radiation Antenna by Dynamic Newton Field
Toshikazu Suzuki, Kimio Tsubono, Kazuaki Kuroda and Hiromasa Hirakawa
L501-L504 : X-Ray Photoelectron Spectroscopy of Ag- and Cu-Doped Amorphous As2Se3
Tokihiro Ueno and Akira Odajima
L505-L507 : Optical and Electrical Properties of CuIn5S8 and AgIn5S8 Single Crystals
Akihiro Usujima, Satoshi Takeuchi, Saburo Endo and Taizo Irie
L508-L510 : Frequency Stabilization of a He-Xe Laser Using a Stark Spectrum in H2CO
Itiro Siio, Motoichi Ohtsu and Toshiharu Tako
L511-L514 : Effects of Surface Acoustic Waves on Molecular Orientation in Nematic Liquid Crystals
Susumu Sato and Hiroko Ueda
L515-L518 : Application of a Position-Sensitive Proportional Detector to Mössbauer γ-Ray Diffraction
Yasuji Kashiwase and Masayuki Minoura
L519-L522 : Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
Noboru Fukuoka and Haruo Saito
L523-L525 : A New Breakdown Phenomenon in Fine Structured VLSI Circuits
Kazutoshi Miyamoto, Heihachi Matsumoto, Yoshikazu Ohbayashi, Isao Ohkura and Hiroshi Matsumura
L526-L528 : Enhancement of Flux Sensitivity by Parallel Operation of rf SQUID
Hisao Furukawa, Kimisuke Shirae and Kozo Kishida
L529-L532 : Polytype Superlattices and Multi-Heterojunctions
L. Esaki, L. L. Chang and E. E. Mendez
L533-L536 : ESR Line Shape in the Incommensurate Phase of K2SeO4 Crystal Doped with VO2+ Ions
Minoru Fukui and Ryuji Abe
L537-L540 : Radiative Recombination on Dislocations in Silicon Crystals
Masashi Suezawa, Yoshiro Sasaki, Yuichiro Nishina and Koji Sumino
L541-L544 : Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer
Makoto Ishida, Hidenori Ohyama, Shuzo Sasaki, Yukio Yasuda, Tatau Nishinaga and Teturo Nakamura
L545-L548 : Low Temperature Growth of Gallium Nitride
Hideki Gotoh, Toru Suga, Hideo Suzuki and Morihiko Kimata
L549-L552 : Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy
Hideyo Okushi, Yozo Tokumaru, Satoshi Yamasaki, Hidetoshi Oheda and Kazunobu Tanaka
L553-L556 : Photoelectric p-n Junction Cells Using Organic Dyes
Kazuhiro Kudo and Toyosaka Moriizumi
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Copyright (C) 1981 Publication Board, Japanese Journal of Applied Physics