Table of Contents
Jpn. J. Appl. Phys. Vol. 21 (1982)
Part 2, No. 1, 5 January 1982
L1-L3 : Frequency Stabilization of AlGaAs Semiconductor Laser to the Absorption Line of Water Vapor
Hidemi Tsuchida, Motoichi Ohtsu and Toshiharu Tako
L4-L6 : Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source
Seitaro Matsuo and Yoshio Adachi
L7-L9 : Fluxon Waves on a Josephson Transmission Line
Hiroshi Tateno and Shigeki Sakai
L10-L12 : Fabrication and I-V Characteristics of High-Tc Nb3Ge Microbridges
Makoto Hikita, Kiko Nakamura, Shugo Kubo, Masaru Igarashi, Masami Kakuchi and Osamu Kogure
L13-L15 : Electron Waves below the Electron Plasma Frequency without Boundary Effects
Toshiro Ohnuma, Tsuguhiro Watanabe and Heiji Sanuki
L16-L18 : Blink Furnace Annealing of Ion-Implanted Silicon
Koichi Kugimiya and Genshu Fuse
L19-L21 : CW Laser Annealing of Polycrystalline Silicon on SiO2 and Effects of Successive Furnace Annealing
Koichi Kugimiya, Genshu Fuse and Kaoru Inoue
L22-L24 : Magneto-Optic Kerr Effect in RF Sputtered Co-Cr Film with Perpendicular Anisotropy
Masanori Abe, Keiji Shono, Kazuo Kobayashi, Manabu Gomi and Shoichiro Nomura
L25-L27 : Observation of GaSe-SnO2 Heterostructure by XPS and AES
Chiei Tatsuyama, Shoji Ichimura and Hiroaki Iwakuro
L28-L30 : Electron Spin Resonance of Petrified Woods for Geological Age Assessment
Motoji Ikeya
L31-L33 : Scattering Tomography
Yasuharu Yoneda and Yoshinori Chikaura
L34-L36 : A Study of the Diffraction of Thermally Scattered Radiation in a Pyrolytic Graphite Crystal by Means of X-Ray Film and Mössbauer Diffraction
Yasuji Kashiwase, Yoshiro Kainuma and Masayuki Minoura
L37-L39 : Diamagnetic Transition due to Proximity Effect in a Fine Multi-Filamentary Nb-Ti Superconductor
Yasukage Oda, Genshiro Fujii and Hiroshi Nagano
L40-L42 : Pattern Size Dependence of Sensitivity of Inorganic SeGe/Ag Resist
Nobuhiro Funakoshi, Susumu Fujimori, Sakae Zembutsu and Toshio Kasai
L43-L45 : Properties of Tellurium Doped Vacuum Evaporated CdS Thin Films
Ratnabali Banerjee, Swati Ray and A. K. Barua
L46-L48 : Liquid Phase Epitaxial Growth of CuGaTe2 on ZnSe from Bi Solution
Hiroshi Takenoshita, Susumu Imai, Tanehiro Nakau and Masatoshi Nishira
L49-L51 : Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
Jun Ohsawa, Kenji Ikeda, Kazuhisa Takahashi and Wataru Susaki
L52-L54 : Effects of Photoelectrons and Auger Electrons on Contrast and Resolution in X-Ray Lithography
Yasunao Saitoh, Hideo Yoshihara and Iwao Watanabe
L55-L56 : Preparation of Low Loss Fluoride Glass Fibers
Seiko Mitachi, Terutoshi Kanamori and Tadashi Miyashita
L57-L58 : Antiferroelectricity and Ferroelectricity in Rb2ZnBr4
Toshihisa Yamaguchi, Shozo Sawada, Masaaki Takashige and Terutaro Nakamura
L59-L61 : New Type of A5B3 Structure in Al-Ti and Ga-Ti Systems; Al5Ti3 and Ga5Ti3
Rokuro Miida, Satoshi Hashimoto and Denjiro Watanabe
L62-L64 : Photoinduced Optical Changes in Amorphous Silicon-Carbon Alloy Prepared by Reactive Sputtering in an Atmosphere of Propane
Seishi Iida and Shigehisa Ohki
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Copyright (C) 1982 Publication Board, Japanese Journal of Applied Physics