JJAP Online

Jpn. J. Appl. Phys. Vol. 21 (1982)
Part 1, No. 5, 20 May 1982

675-679 : Optical Properties of Williams Domain

Shoji Hirata and Toshiharu Tako

680-687 : Phenomenological Considerations of Phase Transformations in Indium-Rich Alloys

Osamu Nittono and Yasumasa Koyama

688-695 : Energy Analysis of High-Energy Neutral Atoms in the Sputtering of ZnO and BaTiO₃

Kikuo Tominaga, Satoshi Iwamura, Yoshihiro Shintani and Osamu Tada

696-701 : Reactive Ion Beam Etching of SiO₂ and Poly-Si Employing C₂F₆, SiF₄ and BF₃ Gases

Haruo Okano and Yasuhiro Horiike

702-705 : Detection Efficiency of a Continuous Dynode Electron Multiplier (Ceratron) for Positrons

Osamu Sueoka

706-711 : Analysis of Pyroelectricity of Poly(vinylidene fluoride) by Residual Charge Measuring Technique

Nobukazu Inoue, Tatsuo Takada, Takao Sakai and Ken'ichi Nakamura

712-715 : Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence

Johji Katsura, Hiroshi Nakayama, Taneo Nishino and Yoshihiro Hamakawa

716-718 : Effect of Oxygen on Compact CW-HCN Laser

Masao Makiuchi and Mitsuo Kawamura

719-721 : New Laser Emission from NH₃ Optically-Pumped by TE-CO₂ Laser

Yoshio Nishi, Yasuo Horiuchi, Satoshi Wada, Noburu Sokabe and Akira Murai

722-724 : Frequency Stabilization of a He-²²Ne Laser by Intracavity Polarization Spectroscopy of CH₄. II

Motoichi Ohtsu and Toshiharu Tako

725-727 : Long-Lived (GaAl)As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder

Toshiro Hayakawa, Saburo Yamamoto, Sadayoshi Matsui, Takeshi Sakurai and Toshiki Hijikata

728-730 : Electronic Conduction in Epitaxial Aluminum Nitride Films on Silicon

Mizuho Morita, Kazuo Tsubouchi and Nobuo Mikoshiba

731-737 : Higher-Order Mode Loss in Stationary State

Toshio Suzuki

738-743 : Fluorescence Simulation in Anthracene Crystal and Its Relation to Exciton Distribution

Hiroshi Shimura and Yujiro Ohba

744-751 : Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO₂ and Si₃N₄ Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon

Satoshi Maeyama and Kenji Kajiyama

752-756 : Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films

Yoshio Sorimachi, Hiroshi Ishiwara, Hiroshi Yamamoto and Seijiro Furukawa

757-761 : Cracks and Corrosion in PSG Passivation Glass

Kenji Takahashi, Kazuya Kitajima and Sumio Imaoka

762-767 : Transparent X-Ray Lithography Masks

Toshiki Ebata, Misao Sekimoto, Toshiro Ono, Katsumi Suzuki, Junji Matsui and Satoshi Nakayama

768-771 : Electron Beam Vacuum Lithography Using a Plasma Co-Polymerized MMA-TMT Resist

Masao Yamada, Junji Tamano, Katsumi Yoneda, Shinzo Morita and Shuzo Hattori

772-775 : NbN Films Prepared by Magnetron Sputtering

Tadahiro Akune, Nobuyoshi Sakamoto and Yoshio Shibuya

776-782 : Chloromethylated Polystyrene as Deep UV and X-Ray Resist

Saburo Imamura and Shungo Sugawara

783-796 : Non-Newtonian Viscosity of a Concentrated Suspension of Deformable Shell Particles

Tadayoshi Murata

Short Notes

797-798 : Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation

Kentaro Onabe

798-799 : Epitaxial Growth of CdTe on PbTe by Close-Spaced Technique

Yasuo Iwamura and Makoto Moriyama

800-801 : CdS Sintered Film for CdS/CdTe Solar Cell

Hitoshi Matsumoto, Akihiko Nakano, Hiroshi Uda, Seiji Ikegami and Toshihiko Miyazawa

801-802 : Composition Deviation in Nb₃Al Thin Films Sputter-Deposited at High Substrate Temperatures

Keiichi Tanabe and Osamu Michikami

803-803 : A Morphological Observation of Ice VI

Katsuhiro Yamamoto

804-804 : Twin Pits in the Facet Region of GaSb Pulled Crystals

Masashi Kumagawa

805-805 : Simple ICTS Measurement Method

Hajime Tomokage, Hiroshi Nakashima and Kimio Hashimoto

806-806 : Ultra-Fast Discharge Fine Line Flash Light Sources for Dye Lasers

Hiroshi Taniguchi and Hiroshi Saito

Errata

807-807 : Molecular Beam Epitaxy of In-Doped CdTe

Koichi Sugiyama

Copyright (C) 1982 Publication Board, Japanese Journal of Applied Physics