Table of Contents
Jpn. J. Appl. Phys. Vol. 24 (1985)
Part 2, No. 1, 20 January 1985
L1-L2 : 9 ps Gate Delay Josephson OR Gate with Modified Variable Threshold Logic
Norio Fujimaki, Seigo Kotani, Shinya Hasuo and Toyoshi Yamaoka
L3-L5 : An EXAFS Investigation on the Lattice Relaxation of Ni-Fine Particles Prepared by Gas Evaporation
Moritaka Hida, Nobuhiko Wada, Hironobu Maeda, Hikaru Terauchi, Yasuhide TSU and Nagao Kamijo
L6-L8 : Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
Yasuo Bamba, Eizo Miyauchi, Masato Nakajima, Hiroshi Arimoto, Akira Takamori and Hisao Hashimoto
L9-L10 : Relaxation Oscillations in Anti-Reflection Coated Low Reflectivity Laser Diode
Kenneth K. Li and Kit Lai Yu
L11-L13 : New Simulation Model for Perpendicular Recording Co-Cr Medium
Akemi Iijima, Kazuo Shiiki and Kiminari Shinagawa
L14-L16 : Transmission Electron Microscopy of Self-Annealed Ion Implanted Silicon
E. Gabilli, R. Lotti, G. Lulli, P. G. Merli and M. Vittori Antisari
L17-L20 : Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
Naotaka Iwata, Yoshishige Matsumoto and Toshio Baba
L21-L23 : The Effects of Carrier Concentration Dependent Diffusion Coefficient on the Lateral Profile of Injected Carriers in Stripe Geometry Lasers
Ch. Tanguy
L24-L26 : Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF2 and CF4 Mixture
Hideki Matsumura, Takashi Uesugi and Hisanori Ihara
L27-L29 : A Study of the Equilibrium Trajectory of the Superconducting Magnetic Levitation System for the Absolute Determination of the Magnetic Flux Quantum
Fuyuhiko Shiota and Ko Hara
L30-L32 : High Resolution Electron Microscopy of Grain Boundaries in Sintered Fe77Nd15B8 Permanent Magnets
Kenji Hiraga, Makoto Hirabayashi, Masato Sagawa and Yutaka Matsuura
L33-L34 : Optical Spectral Change in Conducting Polymer Due to Insulator-Metal Transition Induced by Light Irradiation and Proposal As Optical Memory Element
Katsumi Yoshino, Ryu-ichi Sugimoto, Johan Georg Rabe and Werner Fritz Schmidt
L35-L38 : The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
Takashi Egawa, Yoshiaki Sano, Hiroshi Nakamura, Toshimasa Ishida and Katsuzo Kaminishi
L39-L40 : EXAFS Monitored by Elastic Photoemission
Takashi Fujikawa and Seiji Usami
L41-L44 : Atomic Structure Images Formed by Plasma-Loss Electrons
Natsuo Ajika, Hatsujiro Hashimoto, Koji Yamaguchi and Hisamitsu Endoh
L45-L46 : Lowering of Initial Anodizing Current Density due to Thin Aluminum Oxide Film on Evaporated Aluminum
Akira Kikuchi
L47-L49 : Recovery Effect of Deep Level Luminescence Induced by Below Band-Gap Excitation in GaAs
Michio Tajima
L50-L52 : Periodic Surface Energy Driven Single Crystallization on Flat Surface
Koji Egami
L53-L55 : Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well Structure
Tadaki Miyoshi, Yoshinobu Aoyagi, Yusaburo Segawa, Susumu Namba and Masahiro Nunoshita
L56-L58 : Control of Crystal Orientations in Lattice-Mismatched SrF2 and (Ca, Sr)F2 Films on Si Substrates by Intermediate CaF2 Films
Hiroshi Ishiwara, Seigo Kanemaru, Tanemasa Asano and Seijiro Furukawa
L59-L61 : Measurements of Atomic Hydrogen-Density Profiles in the RFC-XX-M Machine Using Laser Fluorescence Spectroscopy at the Hα Transition
Katsunori Muraoka, Kiichiro Uchino, Yoshio Itsumi, Makoto Hamamoto, Mitsuo Maeda, Masanori Akazaki, Toshikazu Kawamoto, Ryuhei Kumazawa, Shoichi Okamura, Keiz\=o Adati, Takashi Aoki, Hideki Fujita, Kazutoshi Hattori, Shigeru Hidekuma, Yoshimi Okubo, Teruyuki Sato, Harold R. Garner, Dan R. Baker and Harry D. Price
L62-L64 : Determination of Atomic Displacement Modulation in Multi-Layer Structure by X-Ray Diffraction
Jimpei Harada, Yasuharu Kashihara, Makoto Sakata, Masao Mashita and Yasuo Ashizawa
L65-L68 : Striations in Undoped Semi-Insulating LEC GaAs
Masato Nakajima, Tohru Katsumata, Kazutaka Terashima and Koichi Ishida
L69-L71 : LEC Growth of InP Single Crystals Using Ceramics AlN Crucible
Eishi Kubota and Akinori Katsui
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Copyright (C) 1985 Publication Board, Japanese Journal of Applied Physics