Table of Contents
Jpn. J. Appl. Phys. Vol. 24 (1985)
Part 2, No. 7, 20 July 1985
L481-L484 : Strong Resonant Transmission of Microwave Radiation through Metal-Metalloid Foils
Keiichi Kakuno, Taishi Kubota and Tsutomu Yamada
L485-L487 : A Study of Carrier Concentration Profiles for Heavily Si-Implanted Semi-Insulating GaAs
Toshihiko Sakashita, Akiyoshi Tamura, Yoshiaki Yoshioka and Takeshi Onuma
L488-L490 : Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
Takashi Sato, Kazutaka Terashima, Haruo Emori, Shoichi Ozawa, Masato Nakajima, Tsuguo Fukuda and Koichi Ishida
L491-L494 : Detailed Study of Si-H Stretching Modes in µc-Si: H Film through Second Derivative IR Spectra
Takashi Satoh and Akio Hiraki
L495-L497 : NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si2H6
Minoru Kumeda, Hiroshi Komatsu, Tatsuo Shimizu, Nobuhiro Fukuda and Nobuhisa Kitagawa
L498-L500 : Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
Nozomu Watanabe, Toshiaki Fukunaga, Keisuke L. I. Kobayashi and Hisao Nakashima
L501-L503 : Correlation between Mode Fluctuations in a Semiconductor Laser
Hideo Akabane, Tohru Tsuchiya, Tatsuyuki Kawakubo and Hideaki Abe
L504-L506 : Reversible Optical Recording Media with Ga-Se-Te System
Tatsuhiko Matsushita, Akio Suzuki, Masahiro Okuda, Jung Chul Rhee and Hiroyoshi Naito
L507-L509 : Comparison of Sorption Process in Titanium and Vanadium Films
Ryosuke Konishi, Yoshinori Miyada and Hiroshi Sasakura
L510-L512 : Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
Toshiaki Fukunaga, Keisuke L. I. Kobayashi and Hisao Nakashima
L513-L515 : Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
Hiroshi Ishiwara, Akihiro Tamba, Hiroshi Yamamoto and Seijiro Furukawa
L516-L518 : Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
Yoshiro Hirayama, Yoshifumi Suzuki, Seigo Tarucha and Hiroshi Okamoto
L519-L521 : Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well Lasers
Nagaatsu Ogasawara, Ryoichi Ito and Ryuji Morita
L522-L524 : Electron Spin Resonance Study of Boron Doped a-SiNx:H (x=0.07)
Hideo Nojima, Takashi Hayakawa, Shiro Narikawa and Shaw Ehara
L525-L527 : Simple Method for Measuring the Sound Velocity of a High Absorption Liquid
Kiichiro Matsuzawa, Naoki Inoue and Takahi Hasegawa
L528-L530 : Ferroelectric Domain Structure in TGS Just below the Curie Point after Heat Treatment
Noriyuki Nakatani
L531-L532 : A Compact Neutral Copper-Vapor-Laser Operation at Low Temperature Using the CuCl-AlCl3 Vapor Complexes
Hiroshi Saito, Hiroshi Taniguchi and Ken-ichi Owashi
L533-L535 : Influence of Low-Energy Atomic Hydrogen on Argon-Implanted Silicon Schottky Barriers
S. Ashok and K. Giewont
L536-L538 : Polycrystalline Thin-Film TiO2/Se Solar Cells
Tokio Nakada and Akio Kunioka
L539-L541 : High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
Kazuhisa Uomi, Naoki Chinone, Tsukuru Ohtoshi and Takashi Kajimura
L542-L544 : Spin-Polarized Scanning Electron Microscope for Magnetic Domain Observation
Kazuyuki Koike, Hideo Matsuyama, Hideo Todokoro and Kazunobu Hayakawa
L545-L547 : Polyvinyl Alcohol Film Coating Effect on Novolac-Based Positive Electron Resist Sensitivity in X-Ray Lithography in an Atmospheric Environment
Koichi Okada, Takeshi Ohfuji and Junji Matsui
L548-L550 : AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
Shigeru Semura, Tsuneaki Ohta, Takao Kuroda and Hisao Nakashima
L551-L552 : Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP
Sadao Fujii, Shiro Sakai and Masayoshi Umeno
L553-L555 : Characteristics of Heterojunction Consisting of Conducting Polymers of Polythiophene and Polypyrrole
Keiichi Kaneto, Shinji Takeda and Katsumi Yoshino
L556-L558 : Compression of a Cylindrical Thin Electrode in a New Relativistic Electron Beam Diode
Jun-ichi Mizui, Morihiko Sato, Hiroaki Yonezu and Teruhiko Tazima
L559-L562 : Angle-Resolved Plane Wave X-Ray Topography
Tetsuya Ishikawa, Seishi Kikuta and Kazutaka Kohra
L563-L565 : X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy
J. P. Contour, J. Massies and A. Saletes
L566-L568 : 200 kV Mass-Separated Fine Focused Ion Beam Apparatus
Takao Shiokawa, Pil Hyon Kim, Koichi Toyoda, Susumu Namba, Kenji Gamo, Ryuso Aihara and Norimichi Anazawa
[ARCHIVES]
[SEARCH]
[REGISTRATION]
[JJAP ONLINE]
[JJAP HOME]
Copyright (C) 1985 Publication Board, Japanese Journal of Applied Physics