Table of Contents
Jpn. J. Appl. Phys. Vol. 25 (1986)
Part 1, No. 7, 20 July 1986
937-943 : Emission Cross Sections of Excited Fragments Produced by 0-100 eV Electron Impact on SiH4: Application of the “He Standard”
Toshihiko Sato and Toshio Goto
944-949 : Bias Effects on Morphology and Growth Rate of Glow Discharge a-Si:H Films in a Triode System
Ryun Gill Pyon, Masao Aozasa and Keiichi Ando
950-954 : Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
Hideo Sugiura, Minoru Kawashima and Yoshiji Horikoshi
955-960 : Changes of Structural, Electrical, and Optical Properties of Microcrystalline SixGe1-x Films by Annealing
Kenji Kohno, Teiji Iwaoka, Toshio Nakashima, Takeshi Imura and Yukio Osaka
961-965 : Photoelectric Properties of Copper Phthalocyanine Langmuir-Blodgett Film
Mitsuru Yoneyama, Michio Sugi, Mitsuyoshi Saito, Keiichi Ikegami, Shin-ichi Kuroda and Sigeru Iizima
966-970 : Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
E. F. Schubert and K. Ploog
971-975 : Electron Emission Properties and Surface Atom Behavior of an Impregnated Cathode Coated with Tungsten Thin Film Containing Sc2O3
Shigehiko Yamamoto, Sadanori Taguchi, Isato Watanabe and Susumu Kawase
976-980 : Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
Masaya Ichimura and Akio Sasaki
981-992 : Properties of Tetragonal PLZT with Reference to its Diffuse Phase Transition
Masaru Yokosuka and Masakazu Marutake
993-996 : Study of Hot-Pressed Ba(Ca1/3Nb2/3)O3-PbZrO3-PbTiO3 Ceramics. I. Electrical and Optical Properties at Room Temperature
Masaru Yokosuka
997-1005 : Synthesis of A15 Nb-Si Films on Si-Precoated Substrate Using Dual-Target Sputtering
Kiko Nakamura, Koji Takei and Yasushi Maeda
1006-1010 : Improved Fabrication Method of the Microbridge Utilizing Step Edge
Masakazu Nakanishi, Gen Uehara and Ko Hara
1011-1015 : Nb-Pb-Nb Planar Josephson Junction Fabricated by RIE
Shigeru Yoshimori and Mitsuo Kawamura
1016-1020 : Diamagnetism of Carbon Fibers
Keiko Matsubara, Kiyoshi Kawamura and Takuro Tsuzuku
1021-1024 : Misaligned Spherical-Mirror Waveguide Resonators
Tai-Chiung Hsieh, Ken-Yuh Hsu and Yajun Li
1025-1030 : Effects of Gas Flow in DC-Excited Standing-Wave Gas Lasers
Shigeo Asami
1031-1035 : Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
Masayuki Yoshida, Satoru Matsumoto and Yutaka Ishikawa
1036-1039 : VPE Growth of ZnS Incorporating Indium on GaP
Hideo Goto, Jun Zhou, Nobuhiko Sawaki and Isamu Akasaki
1040-1044 : Normal Electric Field Dependence of Electron Mobility in MOS Inversion Layer
Masayoshi Shirahata and Chihiro Hamaguchi
1045-1048 : Selective Acceleration of NBI-injected Fast Ions by Ion Cyclotron Wave in a Tokamak Plasma
Yoshiki Murakami, Kiyoshi Itami, Shin-ichi Ishida, Nobuharu Suzuki, Satoshi Hamaguchi, Hiroshi Yamada, Hitoshi Nihei, Junji Morikawa, Zensho Yoshida and Nobuyuki Inoue
1049-1056 : Pattern Recognition of Charged Particles for the VENUS Central Drift Chamber
Yuji Nakagawa, Tachishige Hirose and Jun-ichi Kanzaki
1057-1063 : Characteristics of the Detectors for Bolometric Measurement in Application to High Temperature Plasma
Isamu Ogawa, Kazuo Kawahata, Nobuaki Noda, Tetsuo Watari, Shuugo Tanahashi, Kazuo Toi and Junji Fujita
1064-1068 : Effect of Ammonium Gas on Electrical Property of Conducting Polymers
Katsumi Yoshino and Hal Bon Gu
1069-1072 : Photoelectrochemical Behavior of n-Type Porous-Si Electrodes
Nobuyoshi Koshida, Hideki Koyama and Yuji Kiuchi
1073-1077 : Tungsten Trioxide/Liquid Electrolyte Electrochromic Devices with Amorphous Iron Tungstate Counter Electrodes -- Response Characteristics and Cell Reliability
Kazusuke Yamanaka
1078-1083 : Double Twin Path Interferometer for Thin Film Thickness Measurement
Vijay Trimbak Chitnis, Yoshiyuki Uchida, Kazuhiro Hane, Katsumi Yoneda and Shuzo Hattori
1084-1086 : Construction of a Highly Sensitive Spectrometer in the Visible Region
Takahiro Kuga, Tadao Shimizu and Yoshifumi Ueda
1087-1090 : Prolate Tetragonal Anvil-Type High-Pressure Apparatus
Motoyuki Nomura, Tokuyuki Hirai, Keigo Kuroda and Hiroshi Fujiwara
1091-1096 : A High Pressure Rolling-Ball Viscometer up to 1 GPa
Masaya Izuchi and Ken Nishibata
1097-1105 : Measurements of Nyquist Noise Spectra in Passive Electric Circuits by Using a SQUID
Mineo Itoh, Takao Mizusaki, Tetsuo Ohmi, Masato Motomura and Akira Hirai
1106-1110 : Helium Irradiation Effect on Hydrogen Isotope Permeation in Austenitic Stainless Steel
Mititaka Terasawa, Kimichika Fukushima, Sigeo Nakahigashi, Katsuyuki Ebisawa and Masashi Iimura
1111-1114 : Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching
Makoto Sekine, Haruo Okano, Kikuo Yamabe, Nobuo Hayasaka and Yasuhiro Horiike
1115-1120 : A Planarization Technique Utilizing Oxide Flow during H2 Treatment of a SiO2-GeO2 Film
Toshio Ogino and Yoshihito Amemiya
1121-1127 : Analyses of ICRF Waves on JET Plasma
Sanae-Inoue Itoh, Kimitaka Itoh and Atsushi Fukuyama
1128-1129 : Comparison of Microstructure of Cross-Sectional CoCr Thin Film Specimens Prepared by Fracture, Microtome, and Ion-Beam Thinning Methods(Short Note)
Masaaki Futamoto, Yukio Honda, Teruho Shimotsu, Hiroshi Kakibayashi and Kazuetsu Yoshida
1130-1131 : Effect of Heat Treatment in Zn Vapor on the Electrical Properties of ZnO Single Crystals Containing Tri-Valent Donor Impurities(Short Note)
Yasuo Kanai
1132-1133 : Fabrication of NbN/Pb(In) Josephson Junctions with High Resistive Normal Layer Produced by Ar+ Ion Bombardment(Short Note)
Yukinori Saito and Shinji Suganomata
1134-1135 : Magnetic Anisotropy and Magneto-Optical Properties of Iron Oxide Films(Short Note)
Shuji Urabe, Takuhisa Numata, Seiji Inokuchi and Yoshifumi Sakurai
1136-1137 : Hasegawa's Three Point Method for Determining Transient Time Constants(Short Note)
J. Michael Steele
1138-1139 : An Application of the Dry Liftoff Method by Molybdenum Oxide Sublimation to CMOS Isolation(Short Note)
Noriyoshi Yamauchi
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Copyright (C) 1986 Publication Board, Japanese Journal of Applied Physics