JJAP Online
Jpn. J. Appl. Phys. Vol. 26 (1987)
Part 2, No. 2, 20 February 1987
L77-L78 : Novel Ferroelectricity in Fluorinated Ferroelectric Liquid Crystal
Katsumi Yoshino, Masanori Ozaki, Hiroki Taniguchi, Masanori Ito, Kazuo Satoh, Noritsugu Yamasaki and Tomoya Kitazume
L79-L81 : Anomalous Decrease of Resistance and Increase of Diamagnetism Above 77 K in Ultrathin Au-Nb Film on Single-Crystal Silicon
Hiroshi Yamamoto, Akinobu Watanabe and Masaichi Tanaka
L82-L83 : Motion of Fluid Driven by Electro-Thermally Ablated Gas Pressure
Kazunari Ikuta
L84-L86 : Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams
Toshihiko Kanayama, Hisao Tanoue and Masanori Komuro
L87-L90 : Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
Katsuhiro Yokota, Kenji Muta, Masatoshi Kimura, Susumu Tamura, Shinji Ishihara and Itsuro Kimura
L91-L93 : n-ITO/p-InGaAsP Solar Cell Fabricated on GaAs Substrate
Hironobu Narui, Shuichi Matsubara, N. Shin-ichi Takahashi and Shoichi Kurita
L94-L96 : Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
Tohru Hara and Jeffrey C. Gelpey
L97-L99 : Approach to Superlattice of Transition Metal Coordination Compounds by Selective Coordinating Epitaxy
Kazuhiro Takahashi, Hiroshi Tanino and Takafumi Yao
L100-L102 : PIG-Type Compact Microwave Metal Ion Source
Yoshikazu Yoshida, Naoki Suzuki, Teruhito Onishi and Yuichi Hirofuji
L103-L104 : Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
Hiroshi Arimoto, Eizo Miyauchi and Hisao Hashimoto
L105-L107 : Metal Schottky Barriers on Hydrogenated Amorphous Ge/Si Superlattices
C. R. Wronski and M. Hicks
L108-L110 : Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
Tomohisa Kitano, Tetsuya Ishikawa, Junji Matsui, Koichi Akimoto, Jun'ichiro Mizuki and Yutaka Kawase
L111-L113 : Amorphous Silicon Superlattice Thin Film Transistors
Masaki Tsukude, Susumu Akamatsu, Seiichi Miyazaki and Masataka Hirose
L114-L116 : Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
Mitsuo Kawabe, Toshio Ueda and Hidetoshi Takasugi
L117-L119 : A 140 ps Optical Pulse Generation by Field-Induced Gain Switching in a Photo-Excited Quantum Well Laser
Tadashi Takeoka, Masamichi Yamanishi, Yasuo Kan and Ikuo Suemune
L120-L122 : MBE Growth of Ga1-xInxAs Alloy on Si Substrate
Kunishige Oe and Hiroaki Takeuchi
L123-L124 : High-Tc Superconductivity of La-Ba-Cu Oxides. II. -Specification of the Superconducting Phase
Hidenori Takagi, Shin-ichi Uchida, Koichi Kitazawa and Shoji Tanaka
L125-L126 : The β-Form-Random Coil Transition of Polypeptide in Solution
Kazuo Kamashima
L127-L130 : 3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys
Sho Shirakata, Taneo Nishino, Yoshihiro Hamakawa, Takamasa Kato and Tetsuro Ishida
L131-L133 : A Resonant-Tunneling Bipolar Transistor (RBT) -A New Functional Device with High Current Gain
Toshiro Futatsugi, Yasuhiro Yamaguchi, Kenichi Imamura, Shunichi Muto, Naoki Yokoyama and Akihiro Shibatomi
L134-L135 : AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
Akira Furuya, Masao Makiuchi, Osamu Wada, Toshio Fujii and Hiroyuki Nobuhara
L136-L138 : Cyclotron Resonance of Photoexcited Holes in High Quality ZnSe
Tyuzi Ohyama, Kiyohiko Sakakibara, Eizo Otsuka, Minoru Isshiki and Katashi Masumoto
L139-L141 : Optical Multistability by a Liquid Crystal Light Modulator
Hitoshi Mada, Yasunari Nakajima and Takao Ozawa
L142-L144 : Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
Akira Takamori, Sumio Sugata, Kiyoshi Asakawa, Eizo Miyauchi and Hisao Hashimoto
L145-L147 : Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
Eizo Miyauchi, Hiroshi Arimoto, Tetsuo Morita and Hisao Hashimoto
L148-L150 : Magnetization Processes of an Agglomerate of Two Spheres with Nonvanishing Magnetocrystalline Anisotropy
H. J. Richter, K. A. Hempel and R. Pietsch
L151-L152 : High-Tc Superconductivity of La-Ba-Cu Oxides. III -Electrical Resistivity Measurement
Shin-ichi Uchida, Hidenori Takagi, Koichi Kitazawa and Shoji Tanaka
Errata
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L153-L153 : Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
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Takashi Noguchi, Hisao Hayashi and Takefumi Ohshima
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Copyright (C) 1987 Publication Board, Japanese Journal of Applied Physics