Table of Contents
Jpn. J. Appl. Phys. Vol. 27 (1988)
Part 2, No. 11, 20 November 1988
L1989-L1992 : Photoassociation of KrF Excimer at 248 nm
Kohzo Hakuta, Kunihiko Nakayama, Masashi Fujino and Hiroshi Takuma
L1993-L1995 : Smectic Layer Structure of Thin Ferroelectric Liquid Crystal Cells Aligned by SiO Oblique Evaporation Technique
Yukio Ouchi, Ji Lee, Hideo Takezoe, Atsuo Fukuda, Katsumi Kondo, Teruo Kitamura and Akio Mukoh
L1996-L1998 : Soft Mode Contribution around Sm A-Sm C* Phase Transition Temperature under DC Bias Field in Ferroelectric Liquid Crystal
Masanori Ozaki, Takashi Hatai and Katsumi Yoshino
L1999-L2002 : a-Si1-xOx:H Films Prepared by Direct Photo-CVD Using CO2 Gas
Shigeru Otsubo, Masaaki Saito, Akiharu Morimoto, Minoru Kumeda and Tatsuo Shimizu
L2003-L2006 : Effect of High Pressure on the Hyperfine Field and Curie Temperature of an Amorphous Fe86B14 Alloy
Ryuichiro Oshima, Shohei Nagatomo, Kazumi Kurimoto, Saburo Nasu, Shoichi Endo and Francisco Eiichi Fujita
L2007-L2009 : Creation of E' Centers in Silica by Glow-Discharge Plasma and Their Annealing
Minoru Kumeda, Hiroki Nagano, Minori Kiwaki and Tatsuo Shimizu
L2010-L2012 : The Dependence of Field Effect Mobilities on Substrate Temperature for Amorphous Silicon Deposition for Amorphous Silicon Thin Film Transistors
Keiji Oyoshi, Yukihisa Kusuda, Tomonori Yamaoka and Shuhei Tanaka
L2013-L2014 : MBE-Related Surface Segregation of Dopant Atoms in Silicon
Kiyokazu Nakagawa, Masanobu Miyao and Yasuhiro Shiraki
L2015-L2018 : Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300°C by Migration-Enhanced Epitaxy
Tadashi Saku and Yoshiji Horikoshi
L2019-L2021 : Gas-Phase and Surface Reactions in Xenon Lamp-Assisted Organometallic Vapor-Phase Epitaxy of ZnSe
Shizuo Fujita, Fumiyo Y. Takeuchi and Shigeo Fujita
L2022-L2024 : Measurement of Preferential Sputtering of Iron-Oxides Using Laser Fluorescence Spectroscopy
Yoshinobu Matsuda, Kouji Yamaguchi, Kiyoyuki Suenaga, Yukihiko Yamagata, Chikahisa Honda, Mitsuo Maeda, Yasunori Yamamura, Katsunori Muraoka and Masanori Akazaki
L2025-L2028 : MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells
Masaaki Tanaka and Hiroyuki Sakaki
L2029-L2031 : A Study of Electron-Stimulated Desorption of Adsorbed CO on (001) Plane of Molybdenum Surface by Means of Time-of-Flight Spectroscopy
Kazuyuki Ueda and Akemi Takano
L2032-L2033 : Dynamical Detection of Ions of Metastable CO Molecules by Electron-Stimulated-Desorption Using Time-of-Flight Technique from Molybdenum Surface
Kazuyuki Ueda and Akemi Takano
L2034-L2036 : Effect of Polymer Elongation on the Absorption Spectrum of Poly(3-alkylthiophene)
Katsumi Yoshino, Mitsuyoshi Onoda and Ryu-ichi Sugimoto
L2037-L2039 : Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation
Hideto Miyake, Yoshihiko Yuba, Kenji Gamo, Susumu Namba, Ryo Mimura and Ryuso Aihara
L2040-L2043 : A New Mode of Modulation Observed in the Bi-Pb-Sr-Ca-Cu-O System
Shozo Ikeda, Katsumi Aota, Takeshi Hatano and Keiichi Ogawa
L2044-L2047 : Lattice Stability of the Bi4(Sr1-yCay)6Cu4Ox Structure under the Change of Sr-Ca Ratio
Masashi Yoshida
L2048-L2051 : Analytical Electron Microscopic Study of High-Tc Superconductor Bi-Ca-Sr-Cu-O
Daisuke Shindo, Kenji Hiraga, Makoto Hirabayashi, Norio Kobayashi, Masae Kikuchi, Keiji Kusaba, Yasuhiko Syono and Yoshio Muto
L2052-L2054 : Preparation and Properties of Bulk Superconductors in the Tl-Pb-Sr-Ca-Cu-O System
Takao Itoh, Hiroyuki Uchida and Hiroshi Uchikawa
L2055-L2058 : Growth of the 2223 Phase in Leaded Bi-Sr-Ca-Cu-O System
Takeshi Hatano, Katsumi Aota, Shozo Ikeda, Keikichi Nakamura and Keiichi Ogawa
L2059-L2062 : A.C. Complex Susceptibility Measurement in Sintered Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O Superconductors
Hiroaki Kumakura, Kazumasa Togano, Kazuhiko Takahashi, Eiji Yanagisawa, Masao Nakao and Hiroshi Maeda
L2063-L2066 : Effect of Mg Addition on Superconducting Properties of Ba-Y-Cu-O Ceramics Prepared by the Melt Quenching Method
Takayuki Komatsu, Hideki Meguro, Ryuji Sato, Osamu Tanaka, Kazumasa Matusita and Tsutomu Yamashita
L2067-L2070 : The High-Tc Phase with a New Modulation Mode in the Bi, Pb-Sr-Ca-Cu-O System
Yasunori Ikeda, Mikio Takano, Zenji Hiroi, Kiichi Oda, Hitoshi Kitaguchi, Jun Takada, Yoshinari Miura, Yasuo Takeda, Osamu Yamamoto and Hiromasa Mazaki
L2071-L2074 : Effect of 120 MeV 16O Ion Irradiation at Low Temperatures on Superconducting Properties of YBa2Cu3O7-x and La1.8Sr0.2CuO4
Akihiro Iwase, Norio Masaki, Tadao Iwata, Takeshi Nihira and Shigemi Sasaki
L2075-L2077 : As-Deposited Superconducting Ba2YCu3O7-y Films Using ECR Ion Beam Oxidation
Kazuyuki Moriwaki, Youichi Enomoto, Shugo Kubo and Toshiaki Murakami
L2078-L2080 : Y-Ba-Cu Oxide Thin Films Prepared by DC Magnetron Sputtering
Tadahiro Akune and Nobuyoshi Sakamoto
L2081-L2083 : Superficial Aggravation of Sputter-deposited Bi-Sr-Ca-Cu-O Films by Annealing
Kanji Tsuchida, Mamoru Ishii, Masasuke Takata and Tsutomu Yamashita
L2084-L2087 : Superconducting Bi-Sr-Ca-Cu-O Thin Films Prepared by Thermal Decomposition of Metallic Complex Salts
Toshiro Maruyama and Seiji Higashi
L2088-L2090 : Stabilization of Ba2YCu3O7-δ by Surface Coating with Plasma Polymerized Fluorocarbon Film
Kota Sato, Shinji Omae, Kuniharu Kojima, Takuya Hashimoto and Hideomi Koinuma
L2091-L2093 : Superconducting Thin Films of Bi-Pb-Sr-Ca-Cu-O by dc Magnetron Sputtering from a Single Target
Yoshinori Hakuraku, Yoshinari Aridome and Tetsuya Ogushi
L2094-L2096 : The Contact Resistance in the Pressed Powder of YBa2Cu3O7-δ
Hiroshi Fujita, Toshiyuki Ohmichi and Yasukage Oda
L2097-L2099 : Radiation Effect of YBa2Cu3O7-y Irradiated by γ -Rays and 14 MeV Neutrons
Teruo Kato, Mitsuo Watanabe, Yukio Kazumata, Hiroshi Naramoto, Tadao Iwata, Yujiro Ikeda, Hiroshi Maekawa and Tomoo Nakamura
L2100-L2102 : Preparation of a Single Crystalline Powder of Superconducting YBa2Cu3O7-x by the Gas Phase Solidification Method
Ryoji Setaka, Wataru Komatsu, Toshiaki Shibata and Minoru Nakajima
L2103-L2104 : Broad Band Emission Behaviors an ZnS Thin Film Electroluminescent Devices
Ryotaro Nakano, Hironaga Matsumoto, Tadao Endo, Jun Shimada, Norio Sakagami and Noboru Miura
L2105-L2107 : Structures and Magnetic Properties of Fe/Co Multilayer Films
Matahiro Komuro, Yuzoo Kozono, Shinji Narishige, Masanobu Hanazono and Yutaka Sugita
L2108-L2111 : Magnetostatic Wave Oscillator
Gen Uehara, Hisao Katakura and Seiichi Naito
L2112-L2114 : Zinc Diffusion Across the Heterojunction in InP/InGaAsP Heterostructures
H. Jung and P. Marschall
L2115-L2117 : Second- and Third-Harmonic Generation of Nd:Glass Laser in Fast Red ITR Organic Crystal Fiber
Shinzo Muto, Osamu Yoda, Akira Sugiyama, Akihiko Fukasawa and Hiroshi Ito
L2118-L2120 : Study of ECR Hydrogen Plasma Treatment on Poly-Si Thin Film Transistors
Tatsuya Takeshita, Takashi Unagami and Osamu Kogure
L2121-L2124 : Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition
Kotaro Okamoto, Mamoru Furuta and Ko-ichi Yamaguchi
L2125-L2127 : Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
Jia-Fa Fan, Haruhiro Oigawa and Yasuo Nannichi
L2128-L2130 : Overturn of Molecules during the Fully Automatic Horizontal Lifting Deposition using Double Gates
Teiji Kato
L2131-L2133 : Fabrication and Characterization of Multilayer Zone Plate for Hard X-Rays
Kazuya Saitoh, Konosuke Inagawa, Kazutake Kohra, Chikara Hayashi, Atsuo Iida and Norio Kato
L2134-L2136 : Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI Processing
Atsushi Sekiguchi, Tsukasa Kobayashi, Naokichi Hosokawa and Tatsuo Asamaki
L2137-L2138 : Alkali-Developable Silicone-Based Positive Resist for Electron Beam Lithography
Hiroshi Ban, Akinobu Tanaka and Saburo Imamura
L2139-L2141 : Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge
Masatoshi Kitagawa, Naoto Matsuo, Genshyu Fuse, Hiroshi Iwasaki, Akihisa Yoshida and Takashi Hirao
L2143-L2145 : High Temperature Operated Enhancement-Type β -SiC MOSFET
Hiroo Fuma, Atsushi Miura, Hiroshi Tadano, Susumu Sugiyama and Mitsuharu Takigawa
L2146-L2148 : Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment
Tadahiro Ohmi, Kiyohiko Matsudo, Tadashi Shibata, Takeshi Ichikawa and Hiroshi Iwabuchi
L2149-L2151 : Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD
Takeshi Tanaka, Koji Deguchi, Seiichi Miyazaki and Masataka Hirose
L2152-L2154 : Growth of SiO2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light
Kohji Inoue, Masanori Okuyama and Yoshihiro Hamakawa
L2155-L2157 : Microcharacterization and Novel Device Applications of Semiconductor-Metal Eutectic Composites
B. M. Ditchek and B. G. Yacobi
L2158-L2160 : A High Integrity and Low Resistance Ti-Polycide Gate Using a Nitrogen Ion-Implanted Buffer Layer
Kazuhiro Kobushi, Shozo Okada, Shuichi Kameyama and Kazuhiko Tsuji
L2161-L2163 : Evaluation of Laser CVD Tungsten for Gate Electrode
Hideaki Matsuhashi, Satosi Nishikawa and Seigo Ohno
L2164-L2167 : The Dielectric Reliability of Very Thin SiO2 Films Grown by Rapid Thermal Processing
Hisashi Fukuda, Toshiyuki Iwabuchi and Seigo Ohno
L2168-L2170 : Improvement of Written-State Retentivity by Scaling Down MNOS Memory Devices
Shin-ichi Minami, Yoshiaki Kamigaki, Ken Uchida, Kazunori Furusawa and Takaaki Hagiwara
L2171-L2173 : Multi-Step Bidirectional NDR Characteristics in Si/Si1-xGex/Si DHBTs and Their Temperature Dependence
D. X. Xu, G. D. Shen, M. Willander and G. V. Hansson
L2174-L2176 : Photochemical Vapor Deposition of Si/Si1-xGex Strained Layer Superlattices at 250°C
Akira Yamada, Ying Jia, Makoto Konagai and Kiyoshi Takahashi
L2177-L2179 : Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments
Hideki Hasegawa, Toshiya Saitoh, Seiichi Konishi, Hirotatsu Ishii and Hideo Ohno
L2180-L2182 : Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing
Kwang Ho Kim, Hiroshi Ishiwara, Tanemasa Asano and Seijiro Furukawa
L2183-L2185 : Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and its Application to GaAs MESFETs
Yuko Sekino, Tamotsu Kimura, Kazuyuki Inokuchi, Yoshiaki Sano and Masaaki Sakuta
L2186-L2188 : Photodetector with Embedded Semiconductor-Metal-Semiconductor Structure
Ki-Woong Chung and Young-Se Kwon
L2189-L2191 : Self-Limited Growth in InP Epitaxy by Alternate Gas Supply
Yoshiki Sakuma, Kunihiko Kodama and Masashi Ozeki
L2192-L2194 : Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy
Michio Sato and Yoshiji Horikoshi
L2195-L2198 : Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94 Films Grown by Metal-Organic Vapor-Phase Epitaxy
Ikuo Suemune, Kouichi Yamada, Hiroyuki Masato, Takashi Kanda, Yasuo Kan and Masamichi Yamanishi
L2199-L2202 : Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method
Yasuyuki Endoh, Yoichi Kawakami, Tsunemasa Taguchi and Akio Hiraki
L2203-L2206 : Development of an Innovative 5 µ m φ Focused X-Ray Beam Energy-Dispersive Spectrometer and its Applications
Naoki Yamamoto and Yoshinori Hosokawa
L2207-L2209 : Three-Dimensional Quantum Well Effects in Ultrafine Silicon Particles
Shoji Furukawa and Tatsuro Miyasato
L2210-L2212 : Ultraclean Technique for Silicon Wafer Surfaces with HNO3-HF Systems
Ritsuo Takizawa, Toshiro Nakanishi, Kouichirou Honda and Akira Ohsawa
L2213-L2215 : Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy
Masaru Takakura, Tsuyoshi Ogura, Tsukasa Hayashi and Masataka Hirose
L2216-L2218 : Novel High-Performance N-AlGaAs/InGaAs/N-AlGaAs Pseudomorphic Double-Heterojunction Modulation-Doped FETs
Katsunori Nishii, Toshinobu Matsuno, Osamu Ishikawa, Hideki Yagita and Kaoru Inoue
L2219-L2222 : A New Photobleachable Positive Resist for KrF Excimer Laser Lithography
Masayuki Endo, Yoshiyuki Tani, Masaru Sasago, Kazufumi Ogawa and Noboru Nomura
L2223-L2226 : Charge Losses of N-Doped Trench Cells
Lothar Risch, Rotraud Maly, Wolfgang Bergner and Roland Kircher
L2227-L2229 : Reversible Tc Change in Bi-Sr-Ca-Cu-O Thin Films by UV Photo and Thermal Annealings
Masashi Kawasaki, Shunroh Nagata, Kou Takeuchi and Hideomi Koinuma
L2230-L2232 : Composition Dependence and Electrical Properties of Tc>100 K BiSrCaCuO Superconducting Oxide Films Prepared by Sequential Deposition
Kenichi Kuroda, Masashi Mukaida and Shintaro Miyazawa
L2233-L2236 : Surfaces and Interfaces of High-Tc Superconductors for Contact and Junction Formation Studied with Synchrotron Radiation Photoemission Spectroscopy
Masaharu Oshima, Yasuko Yamada, Tomoaki Kawamura, Satoshi Maeyama, Kouji Hohkawa, Yasuo Tazoh and Tsuneaki Miyahara
L2237-L2239 : Superconducting Lines Fabricated from Epitaxial Y-Ba-Cu-O Films
Hisanao Tsuge, Shinji Matsui, Noritsugu Matsukura, Yoshikatsu Kojima and Yoshifusa Wada
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Copyright (C) 1988 Publication Board, Japanese Journal of Applied Physics