Table of Contents
Jpn. J. Appl. Phys. Vol. 27 (1988)
Part 2, No. 12, 20 December 1988
L2241-L2244 : Three Classes of New Chiral Dopants: Synthesis and Physical Qualification as Dopants for Practical FLC-Mixtures
H. R. Dübal, C. Escher, D. Günther, W. Hemmerling, Yoshio Inoguchi, I. Müller, Mikio Murakami, D. Ohlendorf and R. Wingen
L2245-L2247 : Saturation of Optical Degradation in a-Si:H Films with Different Morphologies
Hideki Ohagi, Jun-ichi Nakata, Atsushi Miyanishi, Shozo Imao, ManU Jeong, Junji Shirafuji, Keiji Fujibayashi and Yoshio Inuishi
L2248-L2251 : New Amorphous Mg-Ce-Ni Alloys with High Strength and Good Ductility
Akihisa Inoue, Katsumasa Ohtera, Kazuhiko Kita and Tsuyoshi Masumoto
L2252-L2255 : Al-Ge-Mn and Al-Cu-Ge-Mn Quasi-Crystals with Coercivity at Room Temperature
An-Pang Tsai, Akihisa Inoue, Tsuyoshi Masumoto and Noriyuki Kataoka
L2256-L2258 : Electronic Structure of Photochemically Etched Silicon Surfaces
Tsuyoshi Ogura, Tsukasa Hayashi, Seiichi Miyazaki and Masataka Hirose
L2259-L2261 : Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction
Toshiro Isu, Akiyoshi Watanabe, Masayuki Hata and Yoshifumi Katayama
L2262-L2264 : Interaction of Al3Ta Intermetallic Compound Film with Si
Atsushi Noya, Katsutaka Sasaki and Toshiji Umezawa
L2265-L2267 : GaAs and In0.53Ga0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE
Hideki Hasegawa, Masamichi Akazawa, Ken-ichirou Matsuzaki, Hirotatsu Ishii and Hideo Ohno
L2268-L2270 : Silicon Dioxide Thin Films Prepared by Thermal Decomposition of Silicon Tetraacetate
Toshiro Maruyama and Koji Aburai
L2271-L2273 : Threading Dislocation Density Reduction in GaAs on Si Substrates
Takashi Nishioka, Yoshio Itoh, Mitsuru Sugo, Akio Yamamoto and Masfumi Yamaguchi
L2274-L2275 : Oxygen Content and Transition Temperature (Tc) in Ba2-xLn1+xCu3O7-δ (Ln=Sm, Eu)
Satoshi Maruyama, Takahiro Kodama and Makoto Kobayashi
L2276-L2279 : Crystallization of 107 K Superconducting Phase and Partial Melting in the Bi-(Pb)-Sr-Ca-Cu-O System
Akira Ono
L2280-L2282 : Cation Contents and Superconducting Properties of the High-Tc Phase of Bi-Pb-Sr-Ca-Cu-O Ceramics
Norimitsu Murayama, Masanobu Awano, Eiichi Sudo and Yasuyoshi Torii
L2283-L2286 : Identification of the Superconducting Phase in the Nd-Ce-Sr-Cu-O System
Eiji Takayama-Muromachi, Yoshio Matsui, Yoshishige Uchida, Fujio Izumi, Mitsuko Onoda and Katsuo Kato
L2287-L2288 : Bulk Superconductivity in the New Orthorhombic (Tl, Pb)-Ca-Sr-Cu-O System
M. F. Tai, W. N. Wang and H. C. Ku
L2289-L2292 : The Effect of Pb Addition on Superconductivity in Bi-Sr-Ca-Cu-O
Akio Oota, Akihiro Kirihigashi, Yoshinobu Sasaki and Kentaro Ohba
L2293-L2295 : Preparation of High-Tc Superconducting Bi-Pb-Sr-Ca-Cu-O Ceramics by the Melt Quenching Method
Takayuki Komatsu, Ryuji Sato, Chisai Hirose, Kazumasa Matusita and Tsutomu Yamashita
L2296-L2299 : Effect of Ba Addition on the Properties of Bi-Pb-Sr-Ca-Cu-O Superconductors
Tomoji Kawai, Shichio Kawai, Shigeyuki Tanaka, Takeshi Horiuchi, Sadao Takagi, Kiyoshi Ogura, Shiro Kambe and Maki Kawai
L2300-L2303 : Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics
Akira Kikuchi, Motohide Matsuda, Masasuke Takata, Mamoru Ishii, Tsutomu Yamashita and Hideomi Koinuma
L2304-L2305 : Evaluation of Oxygen Nonstoichiometry in High-Tc Superconductors
D. C. Parashar, J. Rai, Prabhat K. Gupta, R. C. Sharma and K. Lal
L2306-L2309 : Geometrical Relations of Various Modulated Structures in Bi-Sr-Ca-Cu-O Superconductors and Related Compounds
Yoshio Matsui and Shigeo Horiuchi
L2310-L2313 : The Reversible Reactions in Tl-Ba-Ca-Cu-O System
Ryoji Sugise, Masayuki Hirabayashi, Norio Terada, Masatoshi Jo, Madoka Tokumoto, Takehiko Shimomura and Hideo Ihara
L2314-L2316 : Preparation of Tl2Ba2Ca2Cu3Oy Thick Films from Ba-Ca-Cu-O Films
Ryoji Sugise, Masayuki Hirabayashi, Norio Terada, Masatoshi Jo, Fumiyuki Kawashima and Hideo Ihara
L2317-L2320 : Preparation of the High-Tc Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O Films by Pyrolysis of 2-Ethylhexanoates
Hiroyuki Nasu, Takeshi Kato, Seigo Makida, Takeshi Imura and Yukio Osaka
L2321-L2323 : Preparation of Superconducting Tl1Ba2Ca3Cu4Ox Thin Films by RF Magnetron Sputtering
Jun Zhou, Yo Ichikawa, Hideaki Adachi, Tsuneo Mitsuyu and Kiyotaka Wasa
L2324-L2326 : Degradation in Bi-Sr-Ca-Cu-O Thin Films Exposed to Water
Kohta Yoshikawa, Masamichi Yoshida and Motoo Nakano
L2327-L2329 : Anomalous Tc Alteration of Quenched Bi2Sr2CaCu2Ox
Takekazu Ishida
L2330-L2332 : Properties of Bi-Sr-Ca-Mg-Cu-O Superconductors
Keiji Moroishi, Yayoi Ogawa and Akira J. Ikushima
L2333-L2335 : Transmission Spectroscopy in the Range 3 to 500 cm-1 in a Superconductor Crystal Bi-Sr-Ca-Cu-O
Masayuki Sato, Keigo Nagasaka, Takasi Shibayama and Kohtaro Ishida
L2336-L2338 : An ESR Study of YBa2Cu3O7-x and Y2BaCuO5 with Oxygen Deficiencies
Terumasa Kato, Atsuo Imai, Shu Yamaguchi, Shinzi Asada, Kazuya Terabe and Yoshiaki Iguchi
L2339-L2341 : Electron Irradiation Effects on a Ba2YCu3O7 Superconductor
Kensuke Shiraishi, Hiroshi Itoh and Osamu Yoda
L2342-L2344 : Effect of S, Se and Te Addition on the Superconductive Properties of Ba2YCu3O7-y
Shiro Kambe and Maki Kawai
L2345-L2347 : Ag-Sheathed Tl-Ba-Ca-Cu-O Superconductor Tape with Tc\approx120 K
Michiya Okada, Ryou Nishiwaki, Tomoichi Kamo, Toshimi Matsumoto, Katsuzo Aihara, Shinpei Matsuda and Masahiro Seido
L2348-L2350 : Erbium Implanted in III-V Materials
C. Rochaix, A. Rolland, P. N. Favennec, B. Lambert, A. Le Corre, H. L'Haridon and M. Salvi
L2351-L2353 : Annealing Effect of Magneto-Optical Kerr Rotation for PtMnSb Compound
K\=oki Takanashi, Hiroyasu Fujimori, Jun Watanabe, Masuhiro Shoji and Aisaku Nagai
L2354-L2356 : Ridge Waveguide DFB Laser Operating at λ=1.5 µ m, Fabricated in a Single Step Epitaxial Growth
J. J. M. Binsma, L. F. Tiemeyer, H. A. C. M. van Zantvoort, I. Baele, T. van Dongen and G. L. A. van der Hofstad
L2357-L2360 : Surface-Emitting AlGaAs/GaAs DH LED with Buried-Window Cylindrical Lens
Tae-Kyung Yoo, Sung-Ho Hahm and Young-Se Kwon
L2361-L2363 : A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer
Masataka Hourai, Toshio Naridomi, Yasunori Oka, Katsumi Murakami, Shigeo Sumita, Nobukatsu Fujino and Toshio Shiraiwa
L2364-L2366 : Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment
R. Stengl, K.-Y. Ahn and U. Gösele
L2367-L2369 : A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx Treatment
Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa and Atsushi Koma
L2370-L2372 : Nonexistence of Long-Range Order in Ga0.5In0.5P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates
Akiko Gomyo, Tohru Suzuki, Sumio Iijima, Hitoshi Hotta, Hiroshi Fujii, Seiji Kawata, Kenichi Kobayashi, Yoshiyasu Ueno and Isao Hino
L2373-L2375 : Metastable Behavior of the DX Center in Si-Doped GaAs
Toshimasa Fujisawa, Jozef Kri\vstofik, Junji Yoshino and Hiroshi Kukimoto
L2376-L2378 : New Quaternary Semiconductor Material Pb1-xMnxS1-ySey for Mid-IR Lasers
Nobuyuki Koguchi, Satoshi Takahashi and Teruo Kiyosawa
L2379-L2381 : A Novel Amorphous-Silicon Field-Effect Transistor with Good Off-Characteristics
Yasutaka Uchida and Masakiyo Matsumura
L2382-L2384 : Heterointerface Field Effect Transistor with 200 A-Long Gate
Akira Ishibashi, Kenji Funato and Yoshifumi Mori
L2385-L2387 : Liner Implosion Experiments with a Pipe Foam Target on Pulsed Power Transformer
Noboru Yugami, Satoshi Umehara, Akira Zakou and Shuji Miyamoto
L2388-L2391 : Dependence of Absorption Spectra and Solubility of Poly(3-alkylthiophene) on Molecular Structure of Solvent
Katsumi Yoshino, Peter Love, Mitsuyoshi Onoda and Ryu-ichi Sugimoto
L2392-L2394 : Emission of Doubly Charged Dimer Ions from Liquid-Metal Ion Sources
Kaoru Umemura, Yoshimi Kawanami and Tohru Ishitani
L2395-L2397 : Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection
Naoki Yasuda, Hiroshi Nakamura, Kenji Taniguchi, Chihiro Hamaguchi and Masakazu Kakumu
L2398-L2400 : A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's
Kazuyuki Saito and Akira Yoshii
L2401-L2403 : Diffusion Barrier with Reactively Sputtered TiN for Thermally Stable Contact
Katsunori Mitsuhashi, Osamu Yamazaki, Koui Ohtake and Masayoshi Koba
L2404-L2407 : Picosecond Response of A Planar GaAs/Al0.3Ga0.7As Schottky Barrier Photodiode
D. H. Lee, S. S. Li and N. G. Paulter
L2408-L2410 : Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz Substrates
Akira Nakamura, Fumiaki Emoto, Eiji Fujii, Yasuhiro Uemoto, Atsuya Yamamoto, Kohji Senda and Gota Kano
L2411-L2413 : RHEED Intensity Observation during TEGa-As4 Alternate Supply Growth of GaAs
Makoto Uneta, Yoshio Watanabe and Yoshiro Ohmachi
L2414-L2416 : A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking
Kazuhiko Itaya, Masayuki Ishikawa, Yukio Watanabe, Koichi Nitta, Gen-ichi Hatakoshi and Yutaka Uematsu
L2417-L2419 : CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE
Kenji Shimoyama, Masanori Katoh, Yoshihiro Suzuki, Takuzoh Satoh, Yuichi Inoue, Satoru Nagao and Hideki Gotoh
L2420-L2423 : Effects of PAsxNy Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In0.53Ga0.47As Metal-Insulator-Semiconductor Field Effect Transistors
Yoshimichi Iwase, Akifumi Kawahara, Fusako Arai and Takuo Sugano
L2424-L2426 : Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure
Makoto Okada, Toshio Ohshima, Manabu Matsuda, Naoki Yokoyama and Akihiro Shibatomi
L2427-L2430 : Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor
Kazuhiko Matsumoto, Yutaka Hayashi, Takeshi Kojima, Toshiyuki Nagata and Tomomi Yoshimoto
L2431-L2433 : The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD
W. Lin, M. D. Lei, C. Y. Chang, W. C. Hsu, L. B. Di and F. Kai
L2434-L2437 : Field-Drifting Resonance Tunneling Through a-Si:H/a-Si1-xCx:H Double Barrier in the p-i-n Structure
Y. L. Jiang and H. L. Hwang
L2438-L2441 : Thin-Film Solid State Devices Based on Nonlinear Magnetostatic Waves
A. D. Boardman, Yu. V. Gulyaev and S. A. Nikitov
L2442-L2444 : Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface
Shigeru Otsubo, Toshiharu Minamikawa, Yasuto Yonezawa, Toshihiro Maeda, Akihiro Moto, Akiharu Morimoto and Tatsuo Shimizu
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Copyright (C) 1988 Publication Board, Japanese Journal of Applied Physics