JJAP Online

Jpn. J. Appl. Phys. Vol. 28 (1989)
Part 1, No. 8, 20 August 1989

1293-1297 : A Study of Vacancy-Type Defects in B⁺-Implanted SiO₂/Si by a Slow Positron Beam: Akira Uedono, Shoichiro Tanigawa, Jun Sugiura and Makoto Ogasawara
1298-1306 : Mass Spectrometric Studies on Silicon Doping of OMYPE GaAs: Masao Mashita
1307-1311 : Surface Migration of Ga and Al Atoms on (100) GaAs and AlAs during Migration-Enhanced Epitaxy: Yoshiji Horikoshi, Hiroshi Yamaguchi and Minoru Kawashima
1312-1319 : Nonempirical Calculation of Ill-V Ternary Semiconductor Phase Diagrams: Tetsuo Mohri, Kiyoshi Koyanagi, Tomonori Ito and Katsuya Watanabe
1320-1322 : Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films: Ratnabali Banerjee, Debajyoti Das, A. K. Batabyal and A. K. Barua
1323-1327 : Approach from a-Ge Films for Development of High-Quality a-SiGe Films: Hisao Haku, Katsunobu Sayama, Tsugufumi Matsuoka, Shinya Tsuda, Shoichi Nakano, Michitoshi Ohnishi and Yukinori Kuwano
1328-1331 : Temperature Dependence of the Center Wavelength of Narrow Band Filters Made of AgGaSe₂, CuGaS₂ and CuAlSe₂: Hiromichi Horinaka, Takafumi Okudo and Nobuyuki Yamamoto
1332-1336 : Luminescence Circular Polarization of AgGaSe₂ on Excitation of Circularly Polarized Light: Hiromichi Horinaka, Hiroshi Inada and Takashi Saijyo
1337-1340 : InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition: Yoshitaka Kohama, Yoshiaki Kadota and Yoshiro Ohmachi
1341-1347 : Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition: Kentaro Shibahara, Tatsuya Takeuchi, Shigehiro Nishino and Hiroyuki Matsunami
1348-1353 : Cascade Model for Reduction of Field-Effect Mobility of Electrons in Lightly Doped Channel of Submicron Gate Si Thin-Film Field-Effect Transistors: Fumitoshi Hatori, Kunihiro Asada and Takuo Sugano
1354-1357 : Electrical, Magnetic and Superconducting Properties of the High-T_c Superconductor Bi₂Sr₂Ca_1-xRE_xCu₂O_8+δ (RE=Nd and Pr): Kuniyuki Koyama, Satoshi Kanno and Seiichiro Noguchi
1358-1361 : Preparation of Superconducting Y-Ba-Cu-O and Bi-Pb-Sr-Ca-Cu-O Compounds by Chelating Method: Tadashi Fujisawa, Akira Takagi, Tetzuji Honjo, Katsuro Okuyama, Shigetoshi Ohshima, Kenzo Matsuki and Kazuo Muraishi
1362-1366 : Self-Epitaxial Growth of Metastable A15 V₃Al on Au-Coated Sapphire Substrates: Shigetoshi Ohshima, Hiroyuki Ishida, Tokuo Wakiyama and Katsuro Okuyama
1367-1372 : Microstructure and Superconductivity in Epitaxial MgO/NbN Multilayers: Shiro Nagaoka, Katsuyoshi Hamasaki, Tsutomu Yamashita and Toranosuke Komata
1373-1377 : White Light Emitting Thin Film Electroluminescent Cells with SrS:Pr,Ce Active Layer and Their Application to Multicolor Electroluminescent Devices: Yoshio Abe, Ken-ichi Onisawa, Katsumi Tamura, Takahiro Nakayama, Masanobu Hanazono and Yashimasa A. Ono
1378-1384 : ZnS:TbOF Thin-Film Green Electroluminescent Panels Fabricated by Two-Target Sputtering: Kenji Okamoto, Takuya Yoshimi, Kimiaki Nakamura, Tetsuya Kobayashi, Sei Sato and Shoshin Miura
1385-1389 : Photocurrent-Voltage Characteristics of a Potassium Tantalate Single Crystal: Eiji Yamaichi and Kikuo Ohi
1390-1395 : Anisotropy in Photocurrent Spectra of Poly(4,4'-oxydiphenylene pyromellitimide) Film: Kazuo Iida, Tsukasa Nohara, Shuhei Nakamura and Goro Sawa
1396-1401 : Photo-Induced Memory Effect in Polyaniline/Polyvinylcarbazole Organic System: Yusuke Nakazawa, Katsuyoshi Hoshino, Jun-ichi Hanna and Hiroshi Kokado
1402-1406 : Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps: Hiroshi Nakashima and Kimio Hashimoto
1407-1411 : Electronic Dielectric Constants of Crystalline and Amorphous GeSb₂Te₄ and Ge₂Sb₂Te₅ Semiconductors: Ryosuke Yokota
1412-1416 : A Method for Determination of Elastic Constants K₁, K₂, K₃ of a Nematic Liquid Crystal Only Using a Homogeneously Aligned Cell: Kazuo Koyama, Masahiro Kawaida and Tadashi Akahane
1417-1420 : The Phase Diagram of the YO_1.5-BaO-CuO Ternary System and Growth of YBa₂Cu₃O₇ Single Crystals: Masaki Maeda, Mikio Kadoi and Takuro Ikeda
1421-1425 : Enhanced Diffusion of Implanted Arsenic in Silicon at an Early Stage of Annealing: Yoshisato Sasaki, Kazuo Itoh and Sei-ichi Tanuma
1426-1443 : Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations: J. Haisma, G. A. C. M. Spierings, U. K. P. Biermann and J. A. Pals
1444-1449 : Surface-Enhanced Raman Scattering from Surface Layers of Gas-Evaporated Silver Small Particles: Shinji Hayashi, Risho Koh, Keiichi Yamamoto and Hideyuki Ishida
1450-1454 : Structural and Mechanical Properties of Cr₂CO Films: Tetsuo Kado and Yukio Noda
1455-1461 : Measurements of Backscattered Electron Energy from CRT Shadow Mask Coatings by Calorimetric Method: Masayasu Koitabashi, Morio Yamamoto, Hiroshi Kimura, Sadao Shimoji and Tetsuya Watanabe
1462-1467 : Ignition of Thermonuclear Fuels Utilising the Energy Liberated in ⁶LI(n,T)⁴He Reactions: Kanapathipillai Murukesapilliai
1468-1473 : Experimental Study on the Deposition Profile of the ICRF Power and Electron Thermal Diffusivity: Yuichi Ogawa, Ritoku Ando, Eiji Kako, Kazuo Kawahata, Yoshiaki Kawasumi, Shigeru Morita, Tetsuo Watari, Ryuichi Akiyama, Yasuji Hamada, Satoru Hirokura, Kuniaki Masai, Keisuke Matsuoka, Akihiro Mohri, Nobuaki Noda, Isamu Ogawa, Kunizo Ohkubo, Kuninori Sato, Shugo Tanahashi, Yoshiyuki Taniguchi and Kazuo Toi
1474-1478 : Electron Orbit Analysis in a Localized Plasma-Beat Wave and a Plasma Fiber Accelerator: Toshiaki Osuga, Kunioki Mima and Hideaki Takabe
1479-1485 : Estimation of Plasma Elongation and Position on Noncircular Tokamak TRIAM-1M: Shin-ichi Moriyama, Kazuo Nakamura, Shoji Kawasaki, Eriko Jotaki, Akihiro Nagao, Yukio Nakamura, Naoji Hiraki and Satoshi Itoh
1486-1490 : Soft X-Ray Spectrum Measurement of the Ultralong Discharge in the TRIAM-1M Tokamak: Akihiro Nagao, Eriko Jotaki, Shin-ichi Moriyama, Kazuo Nakamura, Yukio Nakamura, Naoji Hiraki and Satoshi Itoh
1491-1496 : Emission Cross Sections of the Fragments in Dissociative Excitation of Germane by Electron Impact: Kyaw Tint, Akihiro Kono and Toshio Goto
1497-1500 : A Scanning Total Reflection Method for Refractive-Index Profiling: Xiaofan Zhu and Kenichi Iga
1501-1503 : Construction of a Small-Angle X-Ray Scattering Diffractometer for the Study of Fluctuations in Solutions: Hisashi Hayashi, Keiko Nishikawa and Takao Iijima
1504-1506 : High-Angle Double-Crystal X-Ray Diffractometry (HADOX): Combination with a Sealed-Tube X-Ray Source: Kazutaka Irie, Naohiro Koshiji and Atsushi Okazaki
1507-1512 : Effect of Taste Substances on Aperiodic Oscillation of an Electric Potential in a Synthetic Lipid Membrane: Kenshi Hayashi, Kiyoshi Toko and Kaoru Yamafuji

Short Notes

1513-1514 : Local Fluctuation of Alloy Composition in InGaAsP/GaAs LPE Layers: Takamasa Kato, Takashi Matsumoto and Tetsuro Ishida
1515-1516 : Effect of Stray Carriers on the Separation of Electron and Hole Traps in TSC: Tadashi Fukase, Heng-Yong Nie and Yasuo Nannichi
1517-1518 : Capacitance-Voltage Characteristics of ZnO MIS Diodes: Yasuo Kanai
1519-1520 : Growth and Superconductivity of a New Ternary Intermetallic Compound, Ta₅Ga₂Sn: Toetsu Shishido, Jinhua Ye, Naoki Toyota, Kazutoshi Ukei, Takahiko Sasaki, Hiroyuki Horiuchi and Tsuguo Fukuda
1521-1522 : Axicon-Focused Noncritically Phase-Matched Second-Harmonic Generation: Ryohei Tanuma and Takeshi Kasai
1523-1524 : Dispersive-Type Optical Bistability in a Self-Electrooptic-Effect Etalon: Akihisa Tomita, Akira Suzuki and Keiro Komatsu
1525-1526 : Sulfur-Kβ X-Ray Emission Spectra of Alkaline-Earth Sulfides: Chikara Sugiura, Michihide Kitamura, Shinji Muramatsu, Shizuko Shoji and Shinjiro Kojima
1527-1528 : Growth of Amorphous SiN Films by Chemical Vapor Deposition Using Monomethylamine: Kanji Yasui, Hirohisa Katoh, Kazuki Komaki and Shigeo Kaneda

Errata

1529-1529 : Electric Probe Measurements in an ECR Plasma CVD Apparatus: Kouun Shirai, Takashi Iizuka and Shun-ichi Gonda

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