Table of Contents
Jpn. J. Appl. Phys. Vol. 29 (1990)
Part 2, No. 12, 20 December 1990
L2143-L2145 : Influence of the Surface Condition on the Thermal Relaxation of Strained SiGe Molecular Beam Epitaxy Layers
Hiroyuki Kanaya, Kunihiro Fujii, Yukiko Cho, Yoshinao Kumagai, Fumio Hasegawa and Eiso Yamaka
L2146-L2148 : Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy
Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Fumio Koyama and Kenichi Iga
L2149-L2151 : Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy
Hitoshi Ikeda, Masaru Kamisawa, Akinori Koukitu and Hisashi Seki
L2152-L2154 : Photostructural Change of Chalcogenide Glass Films by Irradiation of Laser Diode Emission
Kiyoshi Chiba
L2155-L2158 : Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
Rolf Könenkamp, Shin-ichi Muramatsu, Haruo Itoh, Sunao Matsubara and Toshikazu Shimada
L2159-L2162 : Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H2 Plasma Treatment for i/p Interface
Hisanori Ihara and Hidetoshi Nozaki
L2163-L2164 : High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films
Hiromu Shiomi, Yoshiki Nishibayashi and Naoji Fujimori
L2165-L2168 : Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H2Se
Akinori Koukitu, Akihiko Saegusa, Masanori Kitho, Hitoshi Ikeda and Hisashi Seki
L2169-L2170 : An SCR with Simple MIS Structure
D. C. Y. Chang, C. L. Lee and T. F. Lei
L2171-L2173 : Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films
Yasutaka Uchida, Hiroshi Kanoh, Osamu Sugiura and Masakiyo Matsumura
L2174-L2176 : An Npn AlGaAs/GaAs Collector-up HBT with an H+-Implanted High Resistivity Layer under the External p+-GaAs Base
Manabu Yanagihara, Yorito Ota, Akira Ryoji and Masanori Inada
L2177-L2179 : Low Surface Resistance of Screen-Printed YBa2Cu3O7-x Thick Films
Osamu Ishii, Tsuneo Konaka, Makoto Sato and Yasuhiro Koshimoto
L2180-L2182 : High-Pressure Synthesis of Superconducting YSr2Cu3Oy
Bin Okai
L2183-L2186 : Annealing Effect of (Pb/Cu)SrLaCuOy Superconductor
Seiji Adachi, Kentaro Setsune and Kiyotaka Wasa
L2187-L2189 : ESR and Nonresonant Microwave Absorption of ErBa2Cu3O7-δ and HoBa2Cu3O7-δ Single Crystals
Kimihito Tagaya, Nobuo Fukuoka and Shigemitsu Nakanishi
L2190-L2192 : Metal-Insulator Transition in Layered-Perovskite Sr3V2O7
Noburu Fukushima, Shigenori Tanaka, Hiromi Niu and Ken Ando
L2193-L2194 : High-Oxygen-Pressure Synthesis of Superconducting Tetragonal YBa2Cu3O7.7
Bin Okai
L2195-L2198 : Formation of 2223 in Bi(Pb)-Sr-Ca-Cu Oxide Resulting from the Reaction of (Bi, Pb)2Sr2Cu1Ox, (Bi, Pb)2Sr2Ca1Cu2Ox, Ca2CuO3 and CuO
Kensuke Fukushima
L2199-L2202 : Crystal Orientation of YBa2Cu3O7-y Thin Films Prepared by RF Sputtering
Tadashi Arikawa, Hideo Itozaki, Keizo Harada, Kenjiro Higaki, Saburo Tanaka and Shuji Yazu
L2203-L2206 : Preparation of YBaCuO Films by Polarized Plasma Oxidation of Multilayered Films
Wataru Ito, Haruo Shimada and Satoshi Ito
L2207-L2210 : Properties of Y1Ba2Cu3O7-x Superconducting Thin Films Prepared by Reactive Evaporation Method
Ho Jung Chang, Yasuhiro Watanabe, Yutaka Doshida, Kenji Shimizu, Yoichi Okamoto, Ryozo Akihama and Jin Tae Song
L2211-L2214 : Bi-Based Superconducting Thin Films Prepared by a Combination of Metalorganic Deposition (MOD) and a Diffusion Process
Seiji Yaegashi, Mark Green, Hirohiko Murakami, Junya Nishino, Yuh Shiohara and Shoji Tanaka
L2215-L2218 : Purification and UV-VIS Light Absorption Property of Source Materials for CVD of High-Tc Superconducting Films
Takuya Hashimoto, Koichi Kitazawa, Youichi Suemune, Takakazu Yamamoto and Hideomi Koinuma
L2219-L2222 : Current-Voltage Characteristics of YBa2Cu3Oy/La0.7Ca0.3MnOz/YBa2Cu3Oy Trilayered-Type Junctions
Masahiro Kasai, Toshiyuki Ohno, Yoko Kanke, Yuzoo Kozono, Masanobu Hanazono and Yutaka Sugita
L2223-L2225 : Low Threshold Current and High Relaxation Oscillation Frequency of Short-Cavity Integrable InP/InGaAsP BRS Laser
Nordine Bouadma, Bernard Sermage and Pascal Devoldere
L2226-L2228 : Two-Frequency Operation of a Hybrid TEA CO2 Laser and Its Application to Two-Frequency Pulse Injection Locking
Koichi Sasaki, Hirotaka Ohno, Takaharu Fujii and Takashige Tsukishima
L2229-L2231 : Temperature Dependence of the Half-Wave Voltage in Ti:LiNbO3 Waveguide Devices at 0.83 µ m
Takumi Fujiwara, Takemi Kawazoe and Hiroshi Mori
L2232-L2235 : Effect of Electron and Neutron Irradiation on the Cathodoluminescence of Nitrogen-Doped CVD Diamond
Yoshihiro Yokota, Hiroshi Kawarada and Akio Hiraki
L2236-L2238 : Tilted Homeotropic Alignment of Liquid-Crystal Molecules Using the Rubbing Method
Hidehiro Seki, Yasuhisa Itoh, Tatsuo Uchida and Yoichiro Masuda
L2239-L2242 : Optical Symmetry of Ferroelectric Liquid Crystal Cells
Zhiming Zhuang, Noel A. Clark and Joseph E. Maclennan
L2243-L2246 : Two Types of Anchoring Structure in Smectic Liquid Crystal Molecules
Yasushi Iwakabe, Masahiko Hara, Katumi Kondo, Kenji Tochigi, Akio Mukoh, Anthony F. Garito, Hiroyuki Sasabe and Akira Yamada
L2247-L2249 : Dispersion of Thermal Ripplon on Free Surfaces of Pure Liquids Measured up to 6 MHz
Keiji Sakai, Hajime Tanaka and Kenshiro Takagi
L2250-L2253 : p+-n+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
Toshiki Makimoto and Yoshiji Horikoshi
L2254-L2256 : DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)
Yoshikazu Homma, Robert J. Mcclelland and Hiroki Hibino
L2257-L2260 : Transport in Novel Gated Quantum Wires: The Impact of Wire Length
Cristopher C. Eugster, Jesús A. del Alamo and Michael J. Rooks
L2261-L2263 : Noncentrosymmetric Langmuir-Blodgett Film of Phenylpyrazine Derivative Applicable to Nonlinear Waveguides
Masanao Era, Ken-ichi Nakamura, Tetsuo Tsutsui, Shogo Saito, Hiroyuki Niino, Kenji Takehara, Kazuaki Isomura and Hiroshi Taniguchi
L2264-L2267 : Electronic Structure of Polyfuran and Poly(3-alkylfuran)
Shenglong Wang, Tsuyoshi Kawai, Katsumi Yoshino, Kazuyoshi Tanaka and Tokio Yamabe
L2271-L2274 : Three Dimensional Transient Simulation of Complex Silicon Devices
Paolo Conti, Gernot Heiser and Wolfgang Fichtner
L2275-L2278 : Hot-Carrier Degradation Effects Relevant in Real Operation of Metal Oxide Semiconductor Field Effect Transistors
Werner Weber, Qin Wang, Martin Brox and Doris Schmitt-Landsiedel
L2279-L2282 : Analytical Model for Circuit Simulation with Quarter Micron Metal Oxide Semiconductor Field Effect Transistors: Subthreshold Characteristics
Mitiko Miura-Mattausch and Hermann Jacobs
L2283-L2285 : Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors
Hans Kosina and Siegfried Selberherr
L2286-L2288 : Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering
Udo Schwalke, Wilfried Hänsch and Arnulf Lill
L2289-L2291 : Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
Koji Kotani, Tadashi Shibata and Tadahiro Ohmi
L2292-L2295 : Under Field Oxide Dopant Enhancement (UFDE) for CMOS and BiCMOS Technology
Jong Ho Lee, Young June Park and Jong Duk Lee
L2296-L2299 : A Computer Simulation of the Recombination Process at Semiconductor Surfaces
Toshiya Saitoh and Hideki Hasegawa
L2300-L2303 : Evaluation of the Si-SiO2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
Eiichi Suzuki, Hidetaka Takato, Kenichi Ishii and Yutaka Hayashi
L2304-L2306 : Modeling of Band-to-Band Tunneling Mechanisms
Wolfgang Bergner and Roland Kircher
L2307-L2310 : Sharp Boron Spikes in Silicon Grown at Reduced and Atmospheric Pressure by Fast-Gas-Switching CVD
Adriaan T. Vink, Piet J. Roksnoer, Johannes W. F. M. Maes, Cornelis J. Vriezema, Leo J. van Ijzendoorn and Peer C. Zalm
L2311-L2314 : Silicon Wafer Bonding Mechanism for Silicon-on-Insulator Structures
Takao Abe, Tokio Takei, Atsuo Uchiyama, Katsuo Yoshizawa and Yasuaki Nakazato
L2315-L2318 : Surface Impurities Encapsulated by Silicon Wafer Bonding
Takao Abe, Atsuo Uchiyama, Katsuo Yoshizawa, Yasuaki Nakazato, Mamoru Miyawaki and Tadahiro Ohmi
L2319-L2321 : Ion Energy Distributions at the Electron Cyclotron Resonance Position in Electron Cyclotron Resonance Plasma
Seiji Samukawa, Yukito Nakagawa and Kei Ikeda
L2322-L2325 : A Model for SiNx CVD Film Growth Mechanism by Using SiH4 and NH3 Source Gases
Akihiko Ishitani and Shiro Koseki
L2326-L2328 : As+-Preamorphization Method for Shallow p+-n Junction Formation
Sang-Jik Kwon, Hyeong-Joon Kim and Jong-Duk Lee
L2329-L2332 : Homogeneous Heteroepitaxial NiSi2 Formation on (100)Si
Iwao Kunishima, Kyoichi Suguro, Tomonori Aoyama and Junichi Matsunaga
L2333-L2336 : Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O Ambient
Hisashi Fukuda, Tomiyuki Arakawa and Seigo Ohno
L2337-L2340 : A New Mechanism of Failure in Silicon p+/n Junction Induced by Diffusion Barrier Metals
Yasushi Igarashi, Tetsuo Yamaji and Satoshi Nishikawa
L2341-L2344 : Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300°C Using Tetraethyl Orthosilicate
Nobumasa Suzuki, Kazuya Masu, Kazuo Tsubouchi and Nobuo Mikoshiba
L2345-L2348 : Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
Yoshio Hayashide, Hiroshi Miyatake, Junichi Mitsuhashi, Makoto Hirayama, Takashi Higaki and Haruhiko Abe
L2349-L2352 : Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si
Tsuyoshi Kinoshita, Masaru Takakura, Seiichi Miyazaki, Shin Yokoyama, Mitsumasa Koyanagi and Masataka Hirose
L2353-L2356 : Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors
Guglielmo Fortunato, Massimo Gentili, Laura Luciani, Luigi Mariucci, Alessandro Pecora and Giovanni Petrocco
L2357-L2359 : Pd-Gate a-Si:H Thin-Film Transistors as Hydrogen Sensors
Luigi Mariucci, Alessandro Pecora, Carla Puglia, Carlo Reita, Giovanni Petrocco and Guglielmo Fortunato
L2360-L2362 : Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
M. Hack, J. G. Shaw, P. G. LeComber and M. Willums
L2363-L2365 : The Optimum Design of Thin Film Transistors by Dynamic Characteristics Measurement
Tsutomu Yamada, Susumu Ohima, Katsuya Kihara, Yushi Jinno, Yuji Okita, Teijiro Arioka, Takao Yamaguchi and Takashi Nakakado
L2366-L2369 : Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
Hiroshi Kanoh, Masahiro Yasukawa, Osamu Sugiura, Paul A. Breddels and Masakiyo Matsumura
L2370-L2372 : Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing
Genshiro Kawachi, Takashi Aoyama, Takaya Suzuki, Akio Mimura, Yasunori Ohno, Nobutake Konishi, Yasuhiro Mochizuki and Kenji Miyata
L2373-L2376 : High-Performance a-Si:H Thin Film Transistor Driven Linear Image Sensor with New Multiplex Structure for G4 Facsimile
Hiroyuki Miyake, Kazuhiro Sakai, Tsutomu Abe, Yoshihiko Sakai, Hiroyuki Hotta, Hisao Ito and Takashi Ozawa
L2377-L2379 : Low-Temperature Polysilicon Thin Film Transistors by Non-Mass-Separated Ion Flux Doping Technique
Kunio Masumo, Masaya Kunigita, Satoshi Takafuji, Nobuhiro Nakamura, Atsushi Iwasaki and Masanori Yuki
L2380-L2383 : High Mobility Poly-Si Thin Film Transistors Using Solid Phase Crystallized a-Si Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
Satoshi Takenaka, Masafumi Kunii, Hideaki Oka and Hajime Kurihara
L2384-L2387 : Numerical Analysis of the Optical Response Characteristics of Thin Film Transistor Addressed Liquid Crystal Displays
Yoshinori Numano, Masahiro Hayama and Teruhiko Yamazaki
L2388-L2391 : Two-Dimensional Device Simulation for Polycrystalline Silicon Thin-Film Transistor
So Yamada, Shin Yokoyama and Mitsumasa Koyanagi
L2392-L2394 : Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
Mizuho Morita, Tadahiro Ohmi, Eiji Hasegawa and Akinobu Teramoto
L2395-L2397 : Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment
Haruhiro Goto, Makoto Sasaki, Tadahiro Ohmi, Tadashi Shibata, Atsushi Yamagami, Nobuyuki Okamura and Osamu Kamiya
L2398-L2400 : Optical Absorption in Silicon Oxide Film Near the SiO2/Si Interface
Takashi Haga, Noriyuki Miyata, Kazunori Moriki, Masami Fujisawa, Tatsunori Kaneoka, Makoto Hirayama, Takayuki Matsukawa and Takeo Hattori
L2401-L2404 : Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments
Kazuhisa Sugiyama, Takayuki Igarashi, Kazunori Moriki, Yoshikatsu Nagasawa, Takayuki Aoyama, Rinshi Sugino, Takashi Ito and Takeo Hattori
L2405-L2407 : Particle Counting in Semiconductor Processing Gas and Apparatus with a New Flow-Cell-Type Laser Particle Counter
Kazuo Ichijo, Kaoru Kondo, Tamio Hoshina, Kazuo Tsubouchi and Kazuya Masu
L2408-L2410 : The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
Takeshi Sunada, Tatsuhiro Yasaka, Masaru Takakura, Tsutomu Sugiyama, Seiichi Miyazaki and Masataka Hirose
L2411-L2413 : Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
Kao-Feng Yarn, Chun-Yen Chang, Yeong-Her Wang and Ruey-Lue Wang
L2414-L2416 : InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Kenichi Taira, Fumihiko Nakamura, Ichiro Hase, Hiroji Kawai and Yoshifumi Mori
L2417-L2419 : Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition
Takashi Egawa, Shinji Nozaki, Tetsuo Soga, Takashi Jimbo and Masayoshi Umeno
L2420-L2422 : Near-Room-Temperature Photopumped Blue Lasers in ZnSxSe1-x/ZnSe Multilayer Structures
Koichiro Nakanishi, Ikuo Suemune, Hiroyuki Masato, Yasuhide Kuroda and Masamichi Yamanishi
L2423-L2426 : Phase-Locked Two-Dimensional Arrays of Vertical Cavity Surface Emitting Lasers
Hoi-Jun Yoo, J. R. Hayes, E. G. Paek, J. P. Harbison, L. T. Florez and Young-Se Kwon
L2427-L2429 : A Vertical Integration of GaAs/GaAlAs LED and Vertical FET with Embedded Schottky Electrodes
Chang-Hee Hong, Chang-Tae Kim and Young-Se Kwon
L2430-L2433 : Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
Yoshiaki Nakano, Yohichi Hayashi, Nong Chen, Yasuyuki Sakaguchi and Kunio Tada
L2434-L2437 : On The Barrier Height of Schottky Diodes of Au on n-GaSb
Prakash A. Murawala and Brij Mohan Arora
L2438-L2441 : A Sub-10 ps/gate Direct-Coupled FET Logic Circuit with 0.2 µ m-Gate GaAs MESFET
Hiromi Tsuji, Hiroki Inomata Fujishiro, Hiroshi Nakamura and Seiji Nishi
L2442-L2444 : Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
Hiroyuki Uenohara, Hidetoshi Iwamura and Mitsuru Naganuma
L2445-L2448 : Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect Transistors
Kanji Yoh, Toshiaki Moriuchi and Masataka Inoue
L2449-L2452 : Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon
Tohru Nishibe and Shin-ya Nunoue
L2453-L2456 : Room-Temperature Synthesis of ZnS:Mn Films by H2 Plasma Chemical Sputtering
Masayoshi Tonouchi, Yong Sun, Tatsuro Miyasato, Hiroshi Sakama and Masaki Ohmura
L2457-L2459 : Control of GaAs on Si Interface Using Atomic Layer Epitaxy
Kuninori Kitahara, Nobuyuki Ohtsuka, Osamu Ueda, Makoto Funagura and Masashi Ozeki
L2460-L2462 : Electrical Properties of Gallium Fluoride(GaF3)/GaAs Interface with and without Sulfur Treatment
Herve Ricard, Kwang Ho Kim, Kouji Aizawa and Hiroshi Ishiwara
L2463-L2465 : Possibility of Magnetic Ordered States in Semiconductor Quantum Dot System
Akira Sugimura
L2466-L2468 : Preparation of As-Deposited Yb-Ba-Cu-O Superconducting Films by DC Arc Discharge Evaporation Method
Hiroshi Nohira and Hiroshi Ishiwara
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