JJAP Online

Jpn. J. Appl. Phys. Vol. 29 (1990)
Part 1, No. 1, 20 January 1990

1-4 : Dislocation-Free Formation of Artificial Cavities in Si Single Crystal: Naotsugu Yoshihiro and Nobuyoshi Natsuaki
5-7 : Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon: Takahisa Okino and Masayuki Yoshida
8-10 : Dependence of GaAs Ion-Implanted Layer Characteristics on Substrate Resistivity and Residual Acceptor Concentration: M. Baumgartner and K. Löhnert
11-18 : Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source: Yoshikazu Takeda, Soichiro Araki, Susumu Noda and Akio Sasaki
19-24 : Electronic Structure of Nonstoichiometric Boron Nitride Films: Akimasa Sakuma
25-29 : A Predischarge Doping Method for Hydrogenated Amorphous Silicon Films: Kensaku Yano, Ryohei Miyagawa, Akihiko Furukawa and Nozomi Harada
30-33 : Structural and Electrical Properties of Chemical-Solution-Deposited CdS Films for Solar Cells: Hiroshi Uda, Seiji Ikegami and Hajimu Sonomura
34-40 : Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method: Hiromu Shiomi, Keiichirou Tanabe, Yoshiki Nishibayashi and Naoji Fujimori
41-47 : Photoluminescence Properties of GaAs/AlAs Short-Period Superlattices: Masaaki Nakayama, Isao Tanaka, Ikuo Kimura and Hitoshi Nishimura
48-52 : Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties: Syunji Nakata, Syoji Yamada, Yoshiro Hirayama, Tadashi Saku and Yoshiji Horikoshi
53-57 : Crystal Growth of InP on a Gd₃Ga₅O₁₂ Substrate by Organometallic Chemical Vapor Deposition: Tetsuya Mizumoto, Yasushi Shingai, Yasuyuki Miyamoto and Yoshiyuki Naito
58-61 : Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas: Hongyong Zhang, Hiroshi Kanoh, Shunji Yamaji, Osamu Sugiura and Masakiyo Matsumura
62-66 : Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators: Masahiro Matsui, Hiroshi Nagayoshi, Goro Muto, Satoshi Tanimoto, Koichi Kuroiwa and Yasuo Tarui
67-68 : A Note on the Possibility of Conductivity Enhancement in Fast Ion Conductor Superlattices(Short Note): Masaru Aniya
69-73 : Sputter Deposition of YBa₂Cu₃O_7-x Thin Films with Low Gas Pressure: Michihito Muroi, Yuko Okamura, Takeshi Suzuki, Koichi Tsuda, Megumi Nagano and Kazuo Mukae
74-78 : Josephson Current in Microbridges of YBa₂Cu₃O_7-δ Thin Films Prepared by CVD: Tsutomu Yamashita, Masanori Era, Satoru Noge, Akinobu Irie, Hisanori Yamane, Toshio Hirai, Hideyuki Kurosawa and Toshiaki Matsui
79-80 : Compositional Change of Sputtered YBa₂Cu₃O_y Films with Substrate Location(Short Note): Katsuhiro Matsutani, Norio Terada, Masatoshi Jo and Hideo Ihara
81-87 : Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory: Kazuhisa Uomi
88-94 : Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. II. Experiment: Kazuhisa Uomi, Tomoyoshi Mishima and Naoki Chinone
95-100 : Improvement of a Corona-Preionized TEA-CO₂ Laser by Means of High-Frequency Corona Discharge: Keiji Nakamura, Chobei Yamabe and Kenji Horii
101-102 : Rhodamine 6G-Resazurin Energy Transfer Dye Laser(Short Note): M. M. F. Sabry and F. M. Mekawey
103-107 : Reduction of the Deterioration of Luminescence Efficiency of P-53 Phosphor Due to Electron Bombardment: Katsutoshi Ohno, Tomohiko Abe and Tsuneo Kusunoki
108-115 : Optical and Electrical Characterization of BSO Crystals: Takayuki Sawada, Tetsuya Hirao, Hiroyuki Ohara and Kikuo Ujihara
116-119 : Electrical Transport Properties of Josephson Junctions Using Polyimide Langmuir-Blodgett Films: Mitsumasa Iwamoto, Tohru Kubota, Manabu Nakagawa and Matsuo Sekine
120-124 : AC Conductivity of Amorphous Fe₂O₃-Bi₃O₃ Oxide Glasses: B. K. Chaudhuri, K. K. Som and A. Ghosh
125-130 : Structure and Electrical Properties of Polyacetylene Yielding a Conductivity of 10⁵ S/cm: Jun Tsukamoto, Akio Takahashi and Kikuko Kawasaki
131-137 : Molecular Orientational Structures in Ferroelectric, Ferrielectric and Antiferroelectric Smectic Liquid Crystal Phases as Studied by Conoscope Observation: Ewa Gorecka, A. D. L. Chandani, Yukio Ouchi, Hideo Takezoe and Atsuo Fukuda
138-144 : Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si: Shinji Nozaki, Nobuhiko Noto, Takashi Egawa, Albert T. Wu, Tetsuo Soga, Takashi Jimbo and Masayoshi Umeno
145-149 : ZnTe Growth and In Situ Gas Analyses in Low-Pressure MOVPE: Mitsuhiro Nhishio and Hiroshi Ogawa
150-152 : F-Type Centers in Neutron-Irradiated AIN: Kozo Atobe, Makoto Honda, Noboru Fukuoka, Moritami Okada and Masuo Nakagawa
153-157 : Growth of Diamond Thin Films by dc Plasma Chemical Vapor Deposition and Characteristics of the Plasma: Kazuhiro Suzuki, Atsuhito Sawabe and Tadao Inuzuka
158-161 : X-Ray Photoelectron Spectroscopy Studies on Modified Poly(ethylene Terephthalate) Surfaces after KrF Laser Ablation: Fumio Kokai
162-167 : Ion Range and Damage Calculations Using the Boltzmann Transport Equation: Tohru Ishitani
168-172 : Flashover Characteristics of Impulse Voltages on Solid Dielectric Surfaces under High Humidity: Seiichi Hasegawa and Hideo Akagami
173-176 : Experimental Investigation on Temporal Evolution of Beam Plasma Discharge: Taro Dodo, Yukio Abe, Seiji Kamata, Ji Han-Tao, Masao Sugawa, Kuniaki Takahashiand Nobuki Kawashima
177-178 : Steady-State Solution of Point-Defect Diffusion Profiles under Irradiation(Short Note): Tsuneyuki Hashimoto
179-180 : The Electron Temperature in a Narrow-Discharge-Tube Noble-Gas Positive-Column Plasma(Short Note): Teruo Kaneda, Yasufumi Ohsone, Tatsuzo Hosokawa and Jen-Shih Chang
181-190 : Radical Emissions and Anomalous Reverse Flames Appearing in Upward-Increasing Magnetic Fields: Takashi Aoki
191-195 : Level Excitation Cross Sections of Atomic Fragments in Low-Energy Electron Impact Dissociation of Group IV Hydrides: Kyaw Tint, Akihiro Kono and Toshio Goto
196-201 : Computer-Controlled Levelling for a Pneumatic Antivibration Table: Mitsuru Tanaka
202-205 : Long-Running-Time (T=0.45 K) Germanium Bolometer for Far Infrared Spectroscopy: Naoki Satoh, Yasumoto Tanaka and Keigo Nagasaka
206-207 : Automatic Acoustic Measurement System by Mechanical Resonance of Continuous Sound Waves(Short Note): Takeshi Fukami
208-209 : A Simple Alternating Current Magnetometer of the Automatic Balancing Type(Short Note): Naoshi Ikeda and Kay Kohn
210-211 : Suppression of Increase in Impurity in Single-Bunch Mode for the UVSOR Storage Ring(Short Note): Makoto Tobiyama, Toshio Kasuga, Hiroto Yonehara, Masami Hasumoto, Toshio Kinoshita, Osamu Matsudo, Eiken Nakamura, Kusuo Sakai and Jun'ichiro Yamazaki
212-218 : Superresolution of FT-NMR Spectra by the Maximum Entropy Method and AR Model Fitting with Singular Value Decomposition: Takanori Uchiyama, Haruyuki Minamitani and Makoto Sakata

Errata

219A-219A : A Numerical Consideration of the Effect of an Antistatic Agent on Electrical Conduction in Polyethylene: Kazue Kaneko, Yasuo Suzuoki, Teruyoshi Mizutani and Masayuki Ieda
219B-219B : Simulation of X-Ray Mask Repair by Means of FIB-Technology: Karl Paul Müller
219C-219C : Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition: Haruki Komano, Youji Ogawa and Tadahiro Takigawa

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