Table of Contents

Jpn. J. Appl. Phys. Vol. 3 (1964)
No. 4, 15 April 1964


175-178 : Single Crystal Film of Ferrites
Humihiko Takei and Shin'ichiro Takasu
179-190 : Dielectric Properties and DC Conductivity of Vacuum-Deposited SiO Films
Hidenori Hirose and Yasaku Wada
191-196 : Crystallite Sizes and Carrier Mobilities in Evaporated Indium Antimonide Films
Ryutaro Koike and Ryuzo Ueda
197-202 : Surface Properties of CdS Single Crystals
Masayuki Itakura and Hiroo Toyoda
203-207 : Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography
Katsuhisa Furusho
208-214 : X-Ray Spectroanalysis of Light Elements Using H3/Zr as Exciting Source
Takashi Tanemura
215-217 : A New Mass Spectrometer of Helicoid Type
Hokotomo Inouye
218-228 : Die physikalischen Eigenschaften des Schibretts
Tsuyoshi Ohnishi
229-230 : Faults in Wurzite Type CdS Crystals(Short Note)
Jun-ichi Chikawa
230-231 : Slow Relaxation Phenomena in Semiconductor-Insula or-Metal Sandwiches(Short Note)
Toshiya Hayashi
231-232 : The Relation between the Spikes and the Q Spoiling Time in a Ruby Laser(Short Note)
Chiyoe Yamanaka and Tatuhiko Yamanaka
232-233 : Characteristics of a Long Ionization Chamber, and Anomalous Responses near the Guard Tube(Short Note)
Kozo Tamura, Yoshihiko Kanamori and Yutaka Furuta
233-234 : On the Forward V-I Characteristics of the GaAs Laser Diode(Short Note)
Yasuo Nannichi
234-235 : Thickness Measurements of Thin Gold Films by γ-ray Spectroscopy(Short Note)
Akira Tasaki, Motohiko Saitoh and Akira Kinbara
235-236 : Ferromagnetic Resonance in Calcium Ferrite containing Gd3+(Short Note)
Noboru Ichinose, Shu Chiba and Kazunobu Kurihara

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