Table of Contents

Jpn. J. Appl. Phys. Vol. 30 (1991)
Part 1, No. 12B, 30 December 1991

3553-3557 : Growth and Properties of Low Pressure Chemical-Vapor-Deposited TiN for Ultra Large Scale integration: Arthur Sherman
3558-3561 : Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition: Takashi Akahori, Akira Tanihara and Masashi Tano
3562-3666 : Single-Target Sputtring Process for Lead Zirconate Titanate Thin Films with Precise Composition Control: Kazuyoshi Torii, Toru Kaga, Keiko Kushida, Hiroshi Takeuchi and Eiji Takeda
3567-3569 : Chemical Stability of HF-Treated Si(111) Surfaces: Tatsuhiro Yasaka, Kozo Kanda, Kenichi Sawara, Seiichi Miyazaki and Masataka Hirose
3570-3574 : Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments: Yukinori Morita, Kazushi Miki and Hiroshi Tokumoto
3575-3579 : Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water: Satoru Watanabe, Mayumi Shigeno, Noriaki Nakayama and Takashi Ito
3580-3583 : Intrinsic Gettering of Iron Impurities in Silicon Wafers: Masaki Aoki, Akito Hara and Akira Ohsawa
3584-3589 : Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film: Naozumi Terada, Hiroki Ogawa, Kazunori Moriki, Akinobu Teramoto, Koji Makihara, Mizuho Morita, Tadahiro Ohmi and Takeo Hattori
3590-3593 : Interaction of Pd with Strained Layers of Si_1-xGe_x Epitaxially Grown on Si(100): A. Buxbaum, M. Eizenberg, A. Raizman and F. Schäffler
3594-3596 : Structure and Properties of Silicon Titanium Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Method: Takeshi Kamada, Masatoshi Kitagawa, Munehiro Shibuya and Takashi Hirao
3597-3600 : Role of SiN Bond Formed by N₂O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO₂ Films: Makoto Yasuda, Hisashi Fukuda, Toshiyuki Iwabuchi and Seigo Ohno
3601-3605 : Photoluminescence of Si_1-xGe_x/Si Quantum Well Structures: Koichi Terashima, Michio Tajima, Nobuyuki Ikarashi, Taeko Niino and Toru Tatsumi
3606-3609 : Visible Photoluminescence of Porous Si and Its Related Optical Properties: Hideki Koyama, Minoru Araki, Yuko Yamamoto and Nobuyoshi Koshida
3610-3616 : A Novel Fabrication Technique of Multilayer Stacked Silicon-on-Insulator Structure Applicable to Three-Dimensional ICs: Kazuhiko Kawai, Shiroh Nakanishi, Hidenori Ogata, Toshifumi Yamaji, Nobuhiko Oda and Kiyoshi Yoneda
3617-3620 : Amorphization Processes in Ion Implanted Si: Temperature Dependence: Teruaki Motooka, Fumihiko Kobayashi, Paul Fons, Takashi Tokuyama, Tadashi Suzuki and Nobuyoshi Natsuaki
3621-3626 : Analysis of Smear Noise in Interline-CCD Image Sensor with Gate-Free Isolation Structure: Hideyuki Ono, Toshifumi Ozaki, Haruhiko Tanaka and Yoshifumi Kawamoto
3627-3629 : BF₂⁺ Ion Implantation into Very-Low-Temperature Si Wafer: Masaru Takakura, Tsuyoshi Kinoshita, Tadashi Uranishi, Seiichi Miyazaki, Mitsumasa Koyanagi and Masataka Hirose
3630-3633 : Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon: George Ferenczi, Tibor Pavelka and Péter Tüttô
3634-3637 : Generation Current Reduction at Local Oxidation of Silicon Isolation Edge by Low-Temperature Hydrogen Annealing: Mikihiro Kimura, Kaoru Motonami and Yasuhiko Onodera
3638-3641 : Analysis of p⁺-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy: Masafumi Tanimoto, Takakuni Douseki and Takako Takigami
3642-3645 : In Situ Observation of Electromigration in Cu Film Using Scanning µ-Reflection High-Energy Electron Diffraction Microscope: Kazuya Masu, Yohei Hiura, Kazuo Tsubouchi, Tadahiro Ohmi and Nobuo Mikoshiba
3646-3651 : A Novel Atomic Layer Epitaxy Method of Silicon: Shigeru Imai, Satoru Takagi, Osamu Sugiura and Masakiyo Matsumura
3652-3656 : Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection: Quazi Deen Mohd Khosru, Naoki Yasuda, Akinori Maruyama, Kenji Taniguchi and Chihiro Hamaguchi
3657-3661 : Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field: Shinobu Takehiro, Norimasa Yamanaka, Haruo Shindo, Shoso Shingubara and Yasuhiro Horiike
3662-36665 : Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon: Nobuyuki Sano, Masaaki Tomizawa and Akira Yoshii
3666-3670 : Coupled Monte Carlo-Energy Relaxation Analysis of Hot Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistors's: Hiroyuki Kurino, Hiroyuki Kiba, Hiroki Mori, Shin Yokoyama, Ken Yamaguchi and Mitsumasa Koyanagi
3671-3676 : Tunnel Structured Stacked Capacitor Cell (TSSC) with High Reliability for 64 Mbit dRAMs and Formation of Oxide-Nitride-Oxide Film (ONO) on 3-dimensionally (3d) Storage Electrode: Naoto Matsuo, Yoshiro Nakata, Hisashi Ogawa, Toshiki Yabu, Susumu Matsumoto, Masaru Sasago and Shozo Okada
3677-3684 : Analytical Device Model of SOI MOSFETs Including Self-Heating Effect: Naoki Yasuda, Shuichi Ueno, Kenji Taniguchi, Chihiro Hamaguchi, Yasuo Yamaguchi and Tadashi Nishimura
3685-3690 : Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System: Shin Yokoyama and Kazuaki Okamoto
3691-3694 : High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiN_x/a-Si Interface: Hiroyuki Uchida, Kazushige Takechi, Shinichi Nishida and Setsuo Kaneko
3695-3699 : Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors: Byung-Chul Ahn, Kazuhiro Shimizu, Tsutomu Satoh, Hiroshi Kanoh, Osamu Sugiura and Masakiyo Matsumura
3700-3703 : Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor: Hiroyuki Kuriyama, Seiichi Kiyama, Shigeru Noguchi, Takashi Kuwahara, Satoshi Ishida, Tomoyuki Nohda, Keiichi Sano, Hiroshi Iwata, Hiroshi Kawata, Masato Osumi, Shinya Tsuda, Shoichi Nakano and Yukinori Kuwano
3704-3709 : High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films: Kazuhiro Shimizu, Hideki Hosoya, Osamu Sugiura and Masakiyo Matsumura
3710-3714 : Low-Temperature Operation of Polycrystalline Silicon Thin-Film Transistors: Hiroki Mori, Kiyomi Hata, Takeshi Hashimoto, I-Wei Wu, Alan G. Lewis and Mitsumasa Koyanagi
3715-3718 : A New Method to Estimate Grain Boundary Trap State Density in Poly-Si TFTs: Noriji Kato, So Yamada, Yoshio Nishihara, Mario Fuse and Toshihisa Hamano
3719-3723 : Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation: Ryoji Oritsuki, Toshikazu Horii, Akira Sasano, Ken Tsutsui, Toshiko Koizumi, Yoshiyuki Kaneko and Toshihisa Tsukada
3724-3728 : Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator: Thomas W. Little, Ken-ichi Takahara, Hideki Koike, Takashi Nakazawa, Ichio Yudasaka and Hiroyuki Ohshima
3729-3732 : Display Performance Improvement of Thin-Film Diode Liquid-Crystal Display by a Low-Temperature Anodizing Method: Keiko Sunohara and Hiroshi Morita
3733-3740 : TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD): Mitsutoshi Miyasaka, Takashi Nakazawa, Ichio Yudasaka and Hiroyuki Ohshima
3741-3743 : Surface States for the GaAs(001) Surfaces Observed by Photoemission Yield Spectroscopy: Kazuyuki Hirose, Takao Noguchi, Akihiko Uchiyama and Masayuki Uda
3744-3749 : Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers: Masamichi Akazawa, Hirotatsu Ishii and Hideki Hasegawa
3750-3754 : In Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors: Toshiya Saitoh, Hirotake Iwadate and Hideki Hasegawa
3755-3758 : In SituCharacterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy: Akihiro Hashimoto, Naoharu Sugiyama and Masao Tamura
3759-3562 : GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties: O. S. Nakagawa, S. Ashok, C. W. Sheen, J. Märtensson and D. L. Allara
3763-3770 : Amorphous-Se/GaAs -A Novel Heterostructure for Solid-State Devices-: Shinichiro Takatani, Takeshi Kikawa and Masatoshi Nakazawa
3771-3773 : Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (\bar111)B Substrates: Yasuhiko Nomura, Yoshitaka Morishita, Sigeo Goto, Yoshifumi Katayama and Toshiro Isu
3774-3776 : Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si: Yoshitaka Okada, Hirofumi Shimomura, Takeyoshi Sugaya and Mitsuo Kawabe
3777-3781 : Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure: Prakash A. Murawala, Osamu Tsuji, Shizuo Fujita and Shigeo Fujita
3782-3787 : Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source: Bing-Xiong Yang and Hideki Hasegawa
3788-3791 : Observation of Luminescence from a Highly Concentrated Nd Center in GaP by Direct Optical Excitation and Comparison with Nd Centers Excited Under Host Excitation: Moriyuki Taniguchi, Hiroshi Nakagome and Kenichiro Takahei
3792-3795 : Gas Source Melecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source: Naoya Okamoto, Hideyasu Ando, Adarsh Sandhu and Toshio Fujii
3796-3801 : Bi₁₂SiO₂₀ Thin Films Grown by Electron Cyclotron Resonance Plasma Sputtering with a Bi and Si Multitarget System: Koji Nomura and Hisahito Ogawa
3802-3805 : Characterization of Novel Cu-Al-Se Films Grown by Molecular Beam Epitaxy: Yoshio Morita and Tadashi Narusawa
3806-3809 : Preparation of PbTiO₃ Thin Films by Ion- and Photoassisted Evaporation: Shigenori Hayashi, Kenji Iijima and Takashi Hirao
3810-3814 : Hysteresis Loops and Microstructures of Fe/Ag Multilayer Films: Yumiko Haga, Yoshio Nakamura, Akira Sugawara and Osamu Nittono
3815-3817 : InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si: Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi and Tadao Ishibashi
3818-3821 : Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs Devices: Kazuyuki Inokuchi, Tadashi Saito, Hideyuki Jinbo, Yoshio Yamashita and Yoshiaki Sano
3822-3827 : The Gate-Bias Dependency of Breakdown Location in GaAs Metal Semiconductor Field Effect Transistors (MESFETs): Jayne M. Ashworth and Norbert Arnold
3828-3832 : A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition: Chang-Tae Kim, Chang-Hee Hong and Young-Se Kwon
3833-3836 : Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors: Kanji Yoh, Hiroaki Taniguchi, Kazumasa Kiyomi and Masataka Inoue
3837-3839 : A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-µm Gate Length: Minoru Sawada, Kimihiki Nagami, Masao Nishida, Yasuhiro Kaizaki, Daijiro Inoue and Yasoo Harada
3840-3842 : GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base: Shinji Nozaki, Koki Saito, Junichi Shirakashi, Ming Qi, Takumi Yamada, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi and Kazuhiko Matsumoto
3843-3845 : Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources: Tsuyoshi Takahashi, Yasuhiro Yamaguchi, Adarsh Sandhu, Hideyasu Ando, Toshio Fujii and Naoki Yokoyama
3846-3849 : Accumulation-Mode GaAlAs/GaAs Bipolar Transistor: Kazuhiko Matsumoto, Masami Ishii, Hidehiro Morozumi, Seiji Imai, Kunuhiro Sakamoto, Yutaka Hayashi, William Liu, Damian Costa, Tony Ma, Allan Massengale and James S. Harris
3850-3852 : In_0.5Ga_0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy: Hiroyuki Masato, Toshinobu Matsuno and Kaoru Inoue
3853-3858 : Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application: Hideaki Tsuchiya, Matsuto Ogawa and Tanroku Miyoshi
3859-3861 : Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates: Yuichi Ochiai, Taizo Onishi, Jonathan Paul Bird, Mitsuo Kawabe, Koji Ishibashi, Yoshinobu Aoyagi and Susumu Namba
3862-3864 : Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer: Koichi Nitta, Kazuhiko Itaya, Yukie Nishikawa, Masayuki Ishikawa, Masaki Okajima and Gen-ichi Hatakoshi
3865-3872 : 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE): Akihiko Kikuchi, Katsumi Kishino and Yawara Kaneko
3873-3875 : Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes: Kazuhiro Ohkawa, Akira Ueno and Tsuneo Mitsuyu
3876-3878 : 1.5 µm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate: Mitsuru Sugo, Hidefumi Mori, Yoshio Itoh, Yoshihisa Sakai and Masami Tachikawa
3879-3882 : Transverse Mode Characteristics of a DBR-Surface Emitting Laser with Buried Heterostructure: Mutsuo Ogura, Seiji Fujii, Takumi Okada, Masato Mori, Katsumi Mori, Tatsuya Asaka and Hideaki Iwano
3883-3886 : Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures: Y. H. Wang, G. Hasnain, K. Tai, J. D. Wynn, B. E. Weir, K. D. Choquette and A. Y. Cho
3887-3892 : A New Optical Neuron Device for All-Optical Neural Networks: Koji Akiyama, Akio Takimoto, Michihiro Miyauchi, Yasunori Kuratomi, Junko Asayama and Hisahito Ogawa
3893-3895 : Integration of PIN and Vertical Junction Field Effect Transistor for Photodetector Optoelectronic Integrated Circuit: Myeong-Kook Gong and Young-Se Kwon
3896-3899 : Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si: Hiroaki Myoren, Kanji Harada, Aiko Miyamoto, Naokazu Miyamoto and Yukio Osaka
3900-3903 : Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy: Takayuki Ishibashi, Yoshitaka Okada, Shin Yokoyama and Mitsuo Kawabe
3904-3906 : BiSrCaCuO/BiSrCuO S/N Heterostructure Grown by Halide Chemical Vapor Deposition: Masaru Ihara, Hiroshi Nakao, Hideki Yamawaki and Takafumi Kimura
3907-3910 : Microwave Heterodyne Mixing by Step-Edge Microbridge Josephson Junctions Using YBaCuO Thin Films: Yoshito Fukumoto, Hiroshi Kajikawa, Rikuo Ogawa and Yoshio Kawate
3911-3919 : Quantum Mechanical Transmission and Reflection of Quasi-Particles at Arbitrary Potential Barriers in the Superconducting Base Transistor: Tetsuya Yamamoto, Hiroshi Suzuki, Tatsuro Usuki, Yorinobu Yoshisato and Shoichi Nakano
3920-3924 : Experimental and Simulation Study of an Auxiliary Circuit to Improve Gain of the Quantum Flux Parametron: Willy Hioe, Mutsumi Hosoya, Eiichi Goto, Reiji Suda and Nobuo Miyamoto
3925-3928 : Fabrication and Noise Properties of NbN Nanobridge dc Superconducting QUantum Interference Devices (SQUIDs): Akinobu Irie, Hiroya Abe, Michal Hatle and Katsuyoshi Hamasaki
3929-3932 : Superconductivity in BiSrCaCuO Superlattices: Two-Dimensional Properties of CuO Planes: Masao Nakao, Hiroaki Furukawa, Ryohkan Yuasa and Shuji Fujiwara
3933-3937 : Properties of the Nb Thin-Film Nanobridges Prepared by Nanometer Fabrication Process: Yuichi Harada, Nobumitsu Hirose, Yoshinori Uzawa and Matsuo Sekine
3938-3942 : A Quantum Flux Parametron (QFP) 12-Bit Shift Register Capable of Stable Microwave Frequency Operation: Juan Casas, Ryotaro Kamikawai, Nobuo Miyamoto and Eiichi Goto