JJAP Online
Jpn. J. Appl. Phys. Vol. 30 (1991)
Part 2, No. 1A, 1 January 1991
L1-L3 : Field-Induced Junction in InSb Gate-Controlled Diodes
W. H. Lan, S. L. Tu, Y. T. Cherng, Y. M. Pang, S. J. Yang and K. F. Huang
L4-L6 : Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
Ryuzo Iga, Hideo Sugiura and Takeshi Yamada
L7-L10 : Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition
Masato Hiramatsu, Takaaki Kamimura, Mitsuo Nakajima and Hiroshi Ito
L11-L14 : A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors
Qing-An Huang, Shi-Ji Lu and Qin-Yi Tong
L15-L17 : A Simple Magnetization Technique for Determining Critical Currents in Superconducting Thin Films
M. J. Scharen, A. H. Cardona, J. Z. Sun, L. C. Bourne and J. R. Schrieffer
L18-L20 : Magnetization of Ceramic Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O after Neutron Irradiation
Saburo Takamura, Hajime Sekino, Hideo Matushima, Mamoru Kobiyama, Taiji Hoshiya, Keiji Sumiya and Hideji Kuwajima
L21-L24 : Promotion of High-Tc Phase in Te-Doped (Bi, Pb)2Sr2Ca2Cu3Oy Superconductors Prepared by the Melt-Quenching Method
Takayuki Komatsu, Nozomu Tamoto, Ryuji Sato, Kazumasa Matusita, Kazuhiko Sawada and Tsutomu Yamashita
L25-L27 : Nitrogen-Ion Irradiation Effect on Ba2YCu3O7 Superconductor
Kensuke Shiraishi, Hiroshi Itoh and Yasushi Aoki
L28-L31 : Preparation of Superconducting Ba2YCu3O7-y Films by the Dipping-Pyrolysis Process at 700° and 750°C
Toshiya Kumagai, Takaaki Manabe, Wakichi Kondo and Susumu Mizuta
L32-L34 : Characteristic of a Microwave Strip Line Made from YBa2Cu3O7-x Superconductor on Alumina Substrate
Yoshiko H. Ohashi, Keisuke Kawabata, Minoru Niwa and Mitsuru Fukuchi
L35-L38 : Excimer Laser-Assisted Chemical Vapor Deposition of Metal-Oxide Thin Film from β-Diketone Complexes
Takahisa Ushida, Kazutoshi Higashiyama, Izumi Hirabayashi and Shoji Tanaka
L39-L41 : In Situ Preparation of Pb-Based Superconducting Thin Films at Low Temperature and Low Oxidizing Atmosphere
Hideaki Adachi, Seiji Adachi, Yo Ichikawa, Kentaro Setsune and Kiyotaka Wasa
L42-L44 : New Light Modulator Using GaSe Layered Crystal
Yasuo Iwamura, Makoto Moriyama and Naozo Watanabe
L45-L48 : Effect of Discharge Current on the Microstructure of Diamond Films Deposited on Aluminum Substrate at Low Substrate Temperature by DC Plasma CVD
Setsuo Nakao, Mikio Noda, Hirohumi Watatani and Shigeo Maruno
L49-L51 : Assignment of New Facets Developing on {111} Surfaces of Vapor-Deposited Diamond Crystals
Keiji Hirabayashi and Noriko Iwasaki Kurihara
L52-L55 : Direct Observation of Strain Distribution in InP/In1-xGaxP Heterointerfaces by the Compositional Analysis by Thickness Fringe Method
Hiroshi Kakibayashi and Kazuhiro Itoh
L56-L59 : Single Crystallization of Aluminum on SiO2 by Thermal Annealing and Observation with Scanning µ-RHEED Microscope
Kazuya Masu, Kazuo Tsubouchi, Yohei Hiura, Tatsuya Matano and Nobuo Mikoshiba
L60-L63 : An Ultimately Low-Threshold Semiconductor Laser with Separate Quantum Confinements of Single Field Mode and Single Electron-Hole Pair
Masamichi Yamanishi and Yoshihisa Yamamoto
L64-L66 : Some Results Obtained by a Newly Constructed Ultra-High-Resolution 1300 kV Electron Microscope
Yoshio Matsui, Shigeo Horiuchi, Yoshio Bando, Yoshizo Kitami, Masato Yokoyama, Shigeru Suehara,Isao Matsui and Teiji Katsuta
L67-L69 : Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique
Akihisa Yoshida, Masaaki Nukayama, Yasunori Andoh, Masatoshi Kitagawa and Takashi Hirao
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Copyright (C) 1991 Publication Board, Japanese Journal of Applied Physics