Table of Contents

Jpn. J. Appl. Phys. Vol. 30 (1991)
Part 2, No. 5B, 15 May 1991

L877-L880 : Observation of a Hole Trap in Liquid-Phase Epitaxial GaAsby Intentional Doping and Space-Charge-Limited Current Analysis

Jun Ohsawa, Phang-Zong Lee, Harry H. Wiederand Masatoshi Migitaka

L881-L884 : Very Stable a-Si:H Prepared by “Chemical Annealing”

Hajime Shirai, Jun-ichi Hanna and Isamu Shimizu

L885-L887 : Room-Temperature Observation of Excitonic Absorption in Ga_xIn_1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy

Noriyuki Yokouchi, Toshikazu Uchida, Takashi Uchida, Tomoyuki Miyamoto, Fumio Koyama and Kenichi Iga

L888-L890 : Direct Determination of Interface Trapped Charges

Cary Y. Yang, Hiroshi Inokawa and Felicia E. Pagaduan

L891-L893 : Influence of Oxygen Partial Pressure on the Solubility of Y₂O₃ in the High T_C Phase of Bi-Pb-Sr-Ca(Y)-Cu-O Superconducting Oxide

Yutaka Iwai, Takahiro Kobayashi, Hiroshi Saito and Masasuke Takata

L894-L897 : Electron Irradiation Effects on Electrical Properties of a Bi_1.4Pb_0.6Sr₂Ca₂Cu₃O₁₀ Superconductor

Kensuke Shiraishi, Hiroshi Itoh and Takahiko Kato

L898-L900 : Preparation of YBa₂Cu₃O_y Superconducting Thin Films on Metallic Substrates by Excimer Laser Ablation

Junichi Saitoh, Masao Fukutomi, Kazunori Komori, Yoshiaki Tanaka, Toshihisa Asano, Hiroshi Maeda and Hidefusa Takahara

L901-L903 : Spontaneous Emission and the Concept of Effective Area in a Very Short Optical Cavity with Plane-Parallel Dielectric Mirrors

Kikuo Ujihara

L904-L906 : Highly Reliable 150 mW CW Operation of Single-Stripe AlGaAs Lasers with Window Grown on Facets

Kazuaki Sasaki, Mitsuhiro Matsumoto, Masaki Kondo, Takashi Ishizumi, Tadashi Takeoka, Saburo Yamamoto and Toshiki Hijikata

L907-L909 : Laser-Scanning Micromanipulation and Spatial Patterning of Fine Particles

Keiji Sasaki, Masanori Koshioka, Hiroaki Misawa, Noboru Kitamura and Hiroshi Masuhara

L910-L913 : GaAs/AlGaAs Lensed Light Emitting Diode by the Meltback and Regrowth in Liquid Phase Epitaxy

Sung-Ho Hahm, Gyu-Seog Cho and Young-Se Kwon

L914-L917 : Determination of the Dominant Nonradiative Recombination Parameters in Heavily Si-Doped GaAs/AlGaAs Multiple Quantum Well Structures

Suryakant Patel, Norihiko Kamata, Eiji Kanoh and Koji Yamada

L918-L920 : In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition

Yoshiharu Yamauchi, Naoki Kobayashi and Yoshiji Horikoshi

L921-L923 : Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers

Sei-ichi Miyazawa and Yoshinobu Sekiguchi

L924-L926 : Photoelectron Emission Study of Hydrogenated Amorphous Carbon Films Prepared by RF Plasma Chemical Vapor Deposition

Masatoshi Nakayama, Kunihiro Ueda, Masanori Shibahara, Kazunori Maruyama and Kiichiro Kamata

L927-L929 : Secondary Ion Yield Changes in Si due to Topography Changes during Cs⁺ Ion Bombardment

Hiroyasu Shichi, Kazuhiro Ohnishi and Setsuo Nomura

L930-L932 : Effect of Coating on the Plasma Chamber Wall in RIKEN Electron Cyclotron Resonance Ion Source

Takahide Nakagawa

L933-L935 : Electron Detachment from Negative Ions of SF₆ in Xenon and Methane

Hartmut Hilmert and Werner F. Schmidt

L936-L939 : Method to Generate a Large Number of Slow Positrons with a Modular Photon-Positron Converter

Akihiro Mohri, Toshinori Michishita, Tetsumori Yuyama and Hitoshi Tanaka

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