JJAP ONLINE : Table of Contents

Tatsuhiko Higashiki, Toru Tojo, Yoshihiko Takahashi, Mitsuo Tabata, Takeshi Nishizaka, Osamu Kuwabara, Norio Uchida, Hisakazu Yoshino and Susumu Saito

4167-4173 : The Method of Measuring Optical Performance in KrF Excimer Lithography

Kazuaki Suzuki, Yukako Matsumoto and Masayuki Murayama

4174-4177 : Fabrication of 0.2 µm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens

Hiroaki Kawata, Ippei Matsumura, Hitoshi Yoshida and Kenji Murata

4178-4184 : Recent Advances in X-Ray Lithography

F. Cerrina

4185-4188 : Design Optimization of Synchrotron Radiation Lithography Beamline for a Compact Storage Ring

Hiroki Shimano, Takashi Hifumi and Yoshihiko Ozaki

4189-4194 : Simulation of X-Ray Mask Distortion

Masatoshi Oda, Shigehisa Ohki, Akira Ozawa, Takashi Ohkubo and Hideo Yoshihara

4195-4199 : Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition

Rakesh Kumar, Tuneaki Ohta, Yoshio Yamashita, Hiroshi Hoga and Keisuke Koga

4200-4204 : Microfabrication of X-Ray Absorber W Utilizing Al₂O₃ as an Etching Mask

Shinji Sugihara, Masamitsu Itoh and Yoshio Gomei

4205-4209 : Fabrication of Diamond Membranes for X-Ray Masks by Hot-Filament Method

Kenji Marumoto, Hideki Yabe, Yasuji Matsui, Hiroaki Yamashita and Noribumi Kikuchi

4210-4214 : Sputtered W-Ti Film for X-Ray Mask Absorber

Hideki Yabe, Kenji Marumoto, Sunao Aya, Nobuyuki Yoshioka, Takeshi Fujino, Yaichiro Watakabe and Yasuji Matsui

4215-4220 : Effect of Anodic Bonding Temperature on Mechanical Distortion of SiC X-Ray Mask Substrate

Tsutomu Shoki, Yoh-ichi Yamaguchi and Hiroyuki Nagasawa

4221-4227 : X-Ray Phase-Shifting Mask for 0.1-µm Pattern Replication under a Large Proximity Gap Condition

Yoh Somemura, Kimiyoshi Deguchi, Kazunori Miyoshi and Tadahito Matsuda

4228-4231 : Resolution Limitation of Proximity X-Ray Lithography Determined by Waveguide Effect

Taro Ogawa, Seiichi Murayama, Kozo Mochiji and Eiji Takeda

4232-4240 : A Scanning Tunneling Microscope Based Microcolumn System

T. H. P. Chang, L. P. Muray, U. Staufer and D. P. Kern

4241-4247 : `NOWEL-2' Variable-Shaped Electron Beam Lithography System for 0.1 µm Patterns with Refocusing and Eddy Current Compensation

Nobuyuki Yasutake, Yasushi Takahashi, Yoshihisa Oae, Akio Yamada, Jun-ichi Kai, Hiroshi Yasuda and Ken-ichi Kawashima

4248-4252 : Main-Field Stitching Accuracy Analysis in Electron Beam Writing Systems

Hirohito Anze, Shuichi Tamamushi, Eiji Nishimura, Yoji Ogawa and Tadahiro Takigawa

4253-4256 : Error Analysis in Electron Beam Lithography System -Thermal Effects on Positioning Accuracy-

Hiroya Ohta, Takashi Matsuzaka, Norio Saitou, Katsuhiro Kawasaki, Kazumitsu Nakamura, Toshihiko Kohno and Morihisa Hoga

4257-4261 : High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing

Shunko Magoshi, Kiyomi Koyama, Osamu Ikenaga, Susumu Watanabe, Tamaki Saito, Shinji Sakamoto and Shin-ichiro Ooki

4262-4267 : Novel Electron Beam Direct Writing Technique for the Hole Pattern of Quarter-Micron Devices

Takeshi Fujino, Atsushi Ishii, Kenji Kawai, Motoko Matsuba, Shuji Nakao, Yaichiro Watakabe and Yoichi Akasaka

4268-4272 : Thermal Characteristics of Si Mask for EB Cell Projection Lithography

Yoshinori NakayamA, Hidetoshi Satoh, Norio Saitou, Shigeki Hirasawa, Takehiko Yanagid and Hideo Todokoro

4273-4282 : Advances in Chemical Amplification Resist Systems

Hiroshi Ito

4283-4287 : Simulation of Chemical Amplification Resists

Hiroshi Yoshino and Hiroshi Matsumoto

4288-4293 : Acid-Catalyzed Reactions of Tetrahydropyranyl-Protected Polyvinylphenol in a Novolak-Resin-Based Positive Resist

Toshio Sakamizu, Hiroshi Shiraishi, Hidenori Yamaguchi, Takumi Ueno and Nobuaki Hayashi

4294-4300 : Influence of Acid Diffusion on the Lithographic Performance of Chemically Amplified Resists

Jiro Nakamura, Hiroshi Ban and Akinobu Tanaka

4301-4306 : Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography

Takahiro Kozawa, Yoichi Yoshida, Mitsuru Uesaka and Seiichi Tagawa

4307-4311 : Bisazidobiphenyls/Novolak Resin Negative Resist Systems for i-Line Phase-Shifting Lithography

Keiko T. Hattori, Takashi Hattori, Shouichi Uchino, Takumi Ueno, Nobuaki Hayashi, Seiichiro Shirai, Noboru Moriuchi and Masayuki Morita

4312-4315 : Improvement of Dry Etching Resistance of Cyclized Polybutadiene Negative Resist by Vacuum Baking

Toshio Shimizu and Vanessa Cornu

4316-4320 : Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography

Yoshio Kawai, Akinobu Tanaka and Tadahito Matsuda

4321-4326 : Surface Imaging Resists for 193 nm Lithography

Donald W. Johnson and Mark A. Hartney

4327-4331 : Surface-Imaged Silicon Polymers for 193-nm Excimer Laser Lithography

Roderick R. Kunz, Mark W. Horn, Greg M. Wallraff, Patricia A. Bianconi, Robert D. Miller, Russell W. Goodman, David A. Smith, Jon R. Eshelman and Eric J. Ginsberg

4332-4337 : Lissajous Electron Plasma (LEP) Generation for Dry Etching

Noboru Nomura, Mitsuhiro Ohkuni, Tokuhiko Tamaki, Ichiro Nakayama, Kenji Harafuji, Srinivasan Sivaram and Masafumi Kubota

4338-4342 : Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor

Makoto Koto, Akira Narai, Hiroyuki Sakaue, Haruo Shindo and Yasuhiro Horiike

4343-4347 : Multi-Coil System for Electron Cyclotron Resonance Plasma Generation

Tsuyoshi Nakamura, Seiji Samukawa, Toshinori Ishida, Akihiko Ishitani and Yutaka Kawase

4348-4356 : Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source

Seiji Samukawa, Tsuyoshi Nakamura, Toshinori Ishida and Akihiko Ishitani

4357-4362 : New Etching System with a Large Diameter Using Electron Beam Excited Plasma

Makoto Ryoji, Tamio Hara, Katsu Ohnishi, Manabu Hamagaki, Yosinori Dake, Masakuni Tohkai and Yoshinobu Aoyagi

4363-4369 : Novel Surface Reaction Model in Dry-Etching Process Simulator

Akio Misaka, Kenji Harafuji, Masafumi Kubota and Noboru Nomura

4370-4375 : Suppression of Microloading Effect by Low-Temperature SiO₂ Etching

Masayuki Sato, Daisuke Takehara, Keichiro Uda, Keizo Sakiyama and Tohru Hara

4376-4380 : Low-Temperature Etching of 0.2 µm Al Patterns Using a SiO₂ Mask

Hidemitsu Aoki, Toshiki Hashimoto, Eiji Ikawa and Takamaro Kikkawa

4381-4386 : Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor

Takashi Yoshikawa, Sigeru Kohmoto, Masami Anan, Noboru Hamao, Masakazu Baba, Norikazu Takado, Yoshimasa Sugimoto, Mitsunori Sugimoto and Kiyoshi Asakawa

4387-4395 : Device-Quality SiO₂/Si(100) Interfaces Prepared by a Two-Step Remote Plasma-Assisted Oxidation-Depositon Process

G. Lucovsky, Yi Ma, T. Yasuda, C. Silvestre and J. R. Hauser

4396-4402 : Contact Fill by Ionized Cluster Beam

Hiroki Ito, Naoyuki Kajita, Hisao Yoshida and Teruo Ina

4403-4406 : Surface Morphology and Line Fill Properties of Gold Grown by Organometallic Chemical Vapor Deposition

Masataka Hoshino, Kazumi Kasai and Junji Komeno

4407-4410 : Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition

Kouichi Tani, Tetsuo Yamaji and Satoshi Nishikawa

4411-4421 : Radiation Induced Structural Changes in Amorphous SiO₂: I. Point Defects

R. A. B. Devine

4422-4427 : Investigation of Hydrogen Plasma Etched Si Surfaces

Masahiko Ishii, Kenji Nakashima, Ichiro Tajima and Minoru Yamamoto

4428-4432 : Investigation of Random and Channeling Ar⁺Implantation-Induced Damage in Al(In)GaAs/GaAs Quantum Wells

Albrecht Kieslich, Josef Straka and Alfred Forchel

4433-4436 : Spatial Controllability of Periodic Ripple Structures Generated in Laser Etching of n-GaAs

Hiroshi Kumagai, Mizunori Ezaki, Koichi Toyoda and Minoru Obara

4437-4440 : Two-Step Doping Using Excimer Laser in Boron Doping of Silicon

Toshimitsu Akane, Takahiro Nii and Satoru Matumoto

4441-4443 : Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films

Katsuhiko Okamoto, Hidetoshi Shin, Kazutoshi Shiba, Seiichi Miyazaki and Masataka Hirose

4444-4448 : Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography

Hidenori Kawanishi, Yoshimasa Sugimoto, Nobuyuki Tanaka and Tomonori Ishikawa

4449-4453 : An Area Selective and Anisotropic Etching of Si by Synchrotron Radiation Excitation: Effects of Introducing O₂ Molecules

Takashi Goto, Osamu Kitamura, Shingo Terakado, Shigeo Suzuki and Kenichiro Tanaka

4454-4458 : Evaluation of Photoemitted Current from SiO₂ Film on Silicon During Synchrotron Radiation Irradiation

Yasuo Nara, Fabrice Moscheni, Yoshihiro Sugita, Kei Horiuchi and Takashi Ito

4459-4462 : Synchrotron Radiation Damage Mechanism of X-Ray Mask Membranes Irradiated in Helium Environment

Tomiyuki Arakawa, Hiroshi Okuyama, Koichi Okada, Hiroyuki Nagasawa, Tsutomu Syoki and Yoh-ichi Yamaguchi

4463-4464 : Mechanism of Layer-by-Layer Homoepitaxial Growth of SrTiO₃(100) as Investigated by Molecular Dynamics and Computer Graphics

Akira Miyamoto, Kentaro Takeichi, Takahiro Hattori, Momoji Kubo and Tomoyuki Inui

4465-4467 : Focused Ion Beam Assisted Etching of Quartz in XeF₂ without Transmittance Reduction for Phase Shifting Mask Repair

Hiroko Nakamura, Haruki Komano and Munehiro Ogasawara

4468-4473 : Novel Technique for Phase-Shifting-Mask Repair Using Focused-Ion-Beam Etch-Back Process

Kunihiro Hosono, Yoshikazu Nagamura, Haruhiko Kusunose, Nobuyuki Yoshioka, Yaichiro Watakabe and Yoichi Akasaka

4474-4478 : Repair of Phase-Shift Masks Using Low Energy Focused Ion Beams

Hsiaowen Lee and R. Fabian W. Pease

4479-4482 : Direct Patterning of Spin-on Glass by Focused Ion Beam Irradiation

Young-Bum Koh, Toshikazu Goto, Junichi Yanagisawa and Kenji Gamo

4483-4486 : Electrical Properties of Nanometer-Width Refractory Metal Lines Fabricated by Focused Ion Beam and Oxide Resists

Nobuyoshi Koshida, Shinichi Watanuki, Kazuyoshi Yoshida, Kinju Endo, Masanori Komuro and Nobufumi Atoda

4487-4491 : High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation

Masayuki Itoh, Tadashi Saku and Seigo Tarucha

4492-4495 : A Focused He⁺ Ion Beam with a High Angular Current Density

Hiroshi Hiroshima, Masanori Komuro, Morikazu Konishi and Toshiro Tsumori

4496-4500 : Nanofabrication for Quantum Devices

D. P. Kern, K. Y. Lee, S. A. Rishton and S. J. Wind

4501-4503 : Fabrication of Atomic-Scale Structures on Si(111)-7×7 Using a Scanning Tunneling Microscope (STM)

Dehuan Huang, Hironaga Uchida and Masakazu Aono

4504-4507 : Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime

Koji ISHibashi, Jonathan P. Bird, Takuo Sugano, Yoshinobu Aoyagi, Yuichi Ochiai, Taizo Onishi and Mitsuo Kawabe

4508-4514 : Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520

Toshio Nishida, Masaya Notomi, Ryuzo Iga and Toshiaki Tamamura

4515-4519 : Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching

Kanji Yoh, Kazumasa Kiyomi, Akira Nishida and Masataka Inoue

4520-4524 : Recent Developments for Sub-Quarter Micrometer Fabrication

F. Rousseaux, A. M. Haghiri-Gosnet, Y. CHEN, M. F. Ravets and H. Launois

4525-4530 : VLSI Fault Localization Using Electron Beam Voltage Contrast Image -Novel Image Acquisition and Localization Method-

Kiyoshi Nikawa, Toyokazu Nakamura, Yasuko Hanagama, Tohru Tsujide, Kenji Morohashi and Kenichi Kanai

4531-4536 : Theoretical Evaluation of Compositional Contrast of Scanning Electron Microscope Images

Masatoshi Kotera, Satoru Yamaguchi, Takafumi Fujiwara and Hiroshi Suga

4537-4540 : Design of a 200 kV Focused Ion Beam Surface Analysis System

Ryoh Mimura, Hiroshi Sawaragi, Ryuso Aihara and Mikio Takai

4541-4544 : New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe

Hirokazu Sayama, Shigenori Hara, Hiroshi Kimura, Yoshikazu Ohno, Shinichi Satoh and Mikio Takai

4545-4549 : Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films

Do-Hyun Choi, Kazuhiro Shimizu, Osamu Sugiura and Masakiyo Matsumura

4550-4554 : Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics

Hiroyuki Kuriyama, Takashi Kuwahara, Satoshi Ishida, Tomoyuki Nohda, Keiichi Sano, Hiroshi Iwata, Shigeru Noguchi, Seiichi Kiyama, Shinya Tsuda, Shoichi Nakano, Masato Osumi and Yukinori Kuwano

4555-4558 : In-Situ Chemically Cleaning Poly-Si Growth at Low Temperature

Tatsuro Nagahara, Kenji Fujimoto, Naoki Kohno, Yusaku Kashiwagi and Hisashi Kakinoki

4559-4562 : Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display

Yutaka Miyata, Mamoru Furuta, Tatsuo Yoshioka and Tetsuya Kawamura

4563-4566 : Effect of Ion Doping Conditions on Electrical Conductivity of Amorphous Silicon Films and Its Application to Thin Film Transistors

Ramesh Kakkad, Takuya Shimano and Nobuki Ibaraki

4567-4569 : Low-Temperature Activation of Impurities Implanted by Ion Doping Technique for Poly-Si Thin-Film Transistors

Minoru Matsuo, Takashi Nakazawa and Hiroyuki Ohshima

4570-4573 : Characteristics of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide and Thin-Film-Transistor Application

Yutaka Nishi, Takashi Funai, Hideo Izawa2

4574-4578 : Process Techniques of 15-inch Full-Color High-Resolution Liquid Crystal Displays Addressed by a-Si Thin Film Transistors

Kenichi Fujii, Yasuo Tanaka, Kouichi Honda, Hiroshi Tsutsu, Hideo Koseki and Sadayoshi Hotta