Table of Contents

Jpn. J. Appl. Phys. Vol. 32 (1993)
Part 2, No. 3B, 15 March 1993

Semiconductors

L361-L364 : Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy: Koichi Inoue, Kenzo Maehashi and Hisao Nakashima
L365-L367 : Electron Spin Resonance Centers and Light-Induced Effects in Porous Silicon: Haruo Yokomichi, Hideyuki Takakura and Michio Kondo
L368-L370 : In-Depth Profile of Electrical Property of InAs Epitaxial Layer Grown on Semi-Insulating GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition: Yasuo Iwamura, Hiroyuki Shigeta and Naozo Watanabe
L371-L374 : Light Soaking of a-Si:H at 77 K: Qing Zhang, Minoru Kumeda and Tatsuo Shimizu
L375-L378 : Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_1-xP_x Strained-Barrier Single Quntum Well Structures: Xiong Zhang, Kentaro Onabe, Hiroyuki Yamaguchi, Yasuhiro Shiraki and Ryoichi Ito
L379-L382 : A Theoretical Investigation of the Metastability of Al on a (100) Zinc Blende Substrate: Tomonori Ito
L383-L385 : Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate: Yusui Nakamura, Masahiro Tsuchiya, Shyun Koshiba, Hiroshi Noge, Hiroyuki Kano and Hiroyuki Sakaki
L386-L389 : Experimental Derivation of Resonant Tunneling Transit Time Using a Coupled-Quantum-Well Base Transistor: Takao Waho and Takashi Mizutani
L390-L391 : Preliminary Reliability Evaluations of GaAs/AlGaAs Electro-Optic Directional Coupler Switches: Kiichi Hamamoto, Takayoshi Anan, Keiro Komatsu and Ikuo Mito
L392-L394 : Chemical-Mechanical Polishing of Metalorganic Chemical-Vapor-Deposited Gold for LSI Interconnection: Masataka Hoshino, Haruyoshi Suehiro, Kazumi Kasai and Junji Komeno
L395-L397 : Noncontact Characterization for Carrier Recombination Center Related to Si-SiO₂ Interface: Ken-ichi Katayama and Fumio Shimura

Superconductors

L398-L399 : Crystal Growth of Bi-Sr-Ca-Cu-O (c₀=39 Å) Single Crystals: Satoru Kishida, Heizo Tokutaka, Makoto Katayama, Katsumi Nishimori, Naganori Ishihara and Takashi Yumoto
L400-L402 : A New Method to Determine the Oxygen Content of YBa₂Cu₃O_7$-δ$: Open-Circuit Voltage Measurement: Jin-Ho Choy, Seong-Gu Kang, Dong-Hoon Kim and Jung-Chul Park
L403-L405 : Superconducting Bi₂Sr₂CaCu₂O_8+X Single Films Grown on SrTiO₃ Substrate by the Liquid Phase Epitaxial Method: Jiro Takemoto, Tetsuo Inoue, Hiroshi Komatsu, Shigeyuki Hayashi, Satoru Miyashita and Makoto Shimizu

Optics and Quantum Electronics

L406-L407 : Influence of the OH Content on Second Harmonic Generation from Electrically Polarized SiO₂ Glasses: Hiroyuki Nasu, Hideki Okamoto, Akihiro Mito, Jun Matsuoka and Kanichi Kamiya
L408-L410 : Relationship between Barrier Thickness and Crystal Quality in InGaAs/InGaAsP Strained Multi-Quantum Well Structure: Shinzo Suzaki, Katare Gopalrao Ravikumar, Toshisada Sekiguchi, Takuya Aizawa and Ryozo Yamauchi
L411-L413 : New Concepts for Material Characterizations and Optical Devices: Positive and Negative Hybrid Logics and Self-Induced Photonic Oscillators: Bruno Ullrich
L414-L416 : Interferometric Phase-Locking of Two Electronic Oscillators Based on a Cascade Electro-Optic Modulator: Pie-Yau Chien and Chen-Hsing Chao

Optical Properties of Condensed Matter

L417-L419 : Anomalous Biophoton Emission during Germination Process of Red Bean: Shoichi Kai, Tomohiko Mitani and Masahiro Fujikawa

Structure and Mechanical and Thermal Properties of Condensed Matter

L420-L423 : Formation of Carbon Nitride Films by Means of Ion Assisted Dynamic Mixing (IVD) Method: Fuminori Fujimoto and Kiyoshi Ogata
L424-L427 : Single-Crystal Structural Study of fcc and hcp C₆₀ from 107 to 298 K Using Synchrotron X-Rays: Tatsuya Kitamoto, Satoshi Sasaki, Tooru Atake, Toshiaki Tanaka, Hitoshi Kawaji, Koichi Kikuchi, Kazuya Saito, Sinzo Suzuki, Yohji Achiba and Isao Ikemoto
L428-L430 : Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor: Kohsuke Nishimura, Yasuyuki Nagao and Kazuo Sakai
L431-L433 : Measurements of Diffusion Coefficiens of Water in Electron Cryclotron Resonance Plasma SiO₂: Yasuo Takahashi, Hideo Namatsu, Katsuyuki Machida and Kazushige Minegishi

Surfaces, Interfaces, and Films

L434-L437 : Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface: Kuang-Yu Liu, Keiji Ueno, Yasunori Fujikawa, Koichiro Saiki and Atsushi Koma
L438-L440 : Large-Area High-Speed Diamond Deposition by Rf Induction Thermal Plasma Chemical Vapor Deposition Method: Masao Kohzaki, Kiyoshi Uchida, Kazuo Higuchi and Shoji Noda
L441-L443 : Time-Resolved Reflection High-Energy Electron Diffraction Monitoring of the Surface Structural Changes of Si{111} during Q-Switched Laser (532 nm) Annealing: Dimitrios Kitriotis and Yoshinobou Aoyagi
L444-L446 : Observation of InP Surfaces after (NH₄)₂S_x Treatment by a Scanning Tunneling Microscope: Kazuhiro Kurihara, Yasuyuki Miyamoto and Kazuhito Furuya
L447-L449 : Model Calculations for Giant Magnetoresistance in Metallic Superlattices: Hiroshi Nakanishi, Ayao Okiji and Hideaki Kasai
L450-L453 : C₆₀ Grown on the Cu(111)1×1 Surface: Kumi Motai, Tomihiro Hashizume, Hisanori Shinohara, Yahachi Saito, Howard W. Pickering, Yuichiro Nishina and Toshio Sakurai
L454-L457 : Junction Properties and Gap States in Nb-Doped TiO₂ Thin Films: Takeshi Okamura and Hideyo Okushi

Instrumentation, Measurement, and Fabrication Technology

L458-L460 : AIN as a Dry-Etch Durable Resist for Electron and Ion Beam Lithography: Tetsuya Tada, Toshihiko Kanayama
L461-L463 : Fundamental Characteristics of Hydrophilic Polymer (Polyether Block Amide) as a Humidity Sensor: Kyoko Yatsuzuka, Yoshio Higashiyama and Kazutoshi Asano
L464-L467 : Nanometer Recording on Graphite and Si Substrate Using an Atomic Force Microscope in Air: Sumio Hosaka, Hajime Koyanagi and Atsushi Kikukawa

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