Table of Contents

Jpn. J. Appl. Phys. Vol. 32 (1993)
Part 2, No. 8B, 15 August 1993

Semiconductors

L1113-L1116 : Substitutional Diffusion of Transition Metal Impurities in Silicon: L. Zhong and F. Shimura
L1117-L1119 : Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction: Xu-Qiang Shen and Tatau Nishinaga
L1120-L1122 : Deep Level Transient Spectroscopy Characterization of Defects Introduced in n-GaAs after Alpha Irradiation at 15 K: S. A. Goodman and F. D. Auret
L1123-L1125 : Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy: Takumi Yamada, Masanori Shirahama, Eisuke Tokumitsu, Makoto Konagai and Kiyoshi Takahashi
L1126-L1129 : Growth and Characterization of GaAs/GaSe/Si Heterostructures: Joyce E. Palmer, Tohru Saitoh, Tokuo Yodo and Masao Tamura

Superconductors

L1130-L1133 : Initial Growth of Epitaxial (001)SrTiO₃ Film Deposited In Situ on (001)YBaCuO/(100)MgO: Tomoyuki Ohara, Ken Sakuta and Takeshi Kobayashi
L1134-L1136 : Growth of [YBa₂Cu₃O_7-δ]_M/[PrBa₂Cu_3-xGa_xO_7-δ]_N Superlattices by Pulsed Laser Deposition: J. P. Contour, C. Sant, D. Ravelosona, B. Fisher and L. Patlagan

Magnetism

L1137-L1140 : Structural and Magnetic Properties of (001) Fe Films: Hiromi Fuke, Atsuhito Sawabe and Tetsuhiko Mizoguchi

Optics and Quantum Electronics

L1141-L1143 : Single Transverse Mode Microcavity Laser with Ultralow Threshold: Henrich Heitmann, Yoshiaki Kadota, Tsuyoshi Kawakami and Yoshihisa Yamamoto
L1144-L1147 : Optical Micromanipulation of a Lasing Polymer Particle in Water: Keiji Sasaki, Hiroaki Misawa, Noboru Kitamura, Ryo Fujisawa and Hiroshi Masuhara

Optical Properties of Condensed Matter

L1148-L1149 : Appearance of Quasi-Direct Optical Transition from Si Network in SiO₂-Doped Si Films: Yukio Osaka, Fumitaka Toyomura, Hideyuki Katayama and Kenji Kohno

Electrical Properties of Condensed Matter

L1150-L1152 : Electrical Properties of Quasi-One-Dimensional Compound KFe(S_1-xSe_x)₂: Shido Nishioka and Kazuyoshi Hirakawa
L1153-L1156 : Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping Source: Shizuo Fujita, Takeharu Asano, Kensaku Maehara and Shigeo Fujita
L1157-L1159 : Measurement and Thermodynamic Analyses of the Dielectric Constant of Epitaxially Grown SrTiO₃ Films: Kazuhide Abe and Shuichi Komatsu

Structure and Mechanical and Thermal Properties of Condensed Matter

L1160-L1163 : Novel Face-Centered Icosahedral Phase in Al-Mg-Li System: Akio Niikura, An Pang Tsai, Akihisa Inoue, Tsuyoshi Masumoto and Akiji Yamamoto
L1164-L1166 : Conversion from GaAs to GaAsP by Annealing a GaAs Layer on GaP in Ga-As-P Solution: Tokuzo Sukegawa, Haruhiko Udono, Masakazu Kimura, Hironobu Katsuno and Akira Tanaka

Surfaces, Interfaces, and Films

L1167-L1168 : TiO₂ Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation of Ti Thin Films: Yoshio Abe and Takuya Fukuda
L1169-L1172 : Polycrystalline CuInSe₂ Thin Films for Solar Cells by Three-Source Magnetron Sputtering: Tokio Nakada, Kazuo Migita and Akio Kunioka

Atoms, Molecules, and Chemical Physics

L1173-L1175 : Effective Photoresponse in C₆₀-Doped Conducting Polymer due to Forbidden Transition in C₆₀: Shigenori Morita, Shinji Kiyomatsu, Masahiko Fukuda, Anvar A. Zakhidov, Katsumi Yoshino, Koichi Kikuchi and Yohji Achiba

Instrumentation, Measurement, and Fabrication Technology

L1176-L1178 : Novel Technique of Infrared Reflection Absorption Spectroscopy for Si Surface Study: Hisayoshi Ohshima and Yoshiyasu Yamada
L1179-L1181 : Cathodoluminescence Measurement of Surfaces in Reflection High-Energy Electron Diffraction Experiments: Michihiro Miyauchi and Noriyoshi Shibata

[ARCHIVES] [SEARCH] [SUBSCRIPTION] [JJAP ONLINE] [JJAP HOME]

Copyright (C) 1993 Publication Board, Japanese Journal of Applied Physics
Contact E-Mail : JJAPweb@ipap.jp