JJAP Online
Jpn. J. Appl. Phys. Vol.33(1994)
Part 1, No. 4A, 15 April 1994
1713-1716 : Concentration Profiles of Deep Levels Induced by Gold Diffusion in Silicon
Manabu Takahashi, Masami Morooka, Fumito Ueda and Fumio Hashimoto
1717-1722 : Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition
Xinming Huang, Kazutaka Terashima, Hitoshi Sasaki, Eiji Tokizaki, Yutaka Anzai and Shigeyuki Kimura
1723-1727 : Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
Atsushi Ikari, Hiroyo Haga, Akira Uedono, Yusuke Ujihira and Osamu Yoda
1728-1734 : Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
Shun-ichiro Ishigami, Satoru Ishii, Hiroshi Shinyashiki, Hisashi Furuya and Takayuki Shingyouji
1735-1739 : Analytical Model to Determine the Gate Leakage Current in In0.52Al0.48As/In xGa1- xAs Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission
Jürgen Dickmann, Heinrich Daembkes, Steffen Schildberg, Hans-Joachim Fittng, Peter Ellrod and Franz Joseph Tegude
1740-1746 : Optical Properties of High-Quality Ga1- xIn xAs1- ySb y/InAs Grown by Liquid-Phase Epitaxy
Xiuying Gong, Hirofumi Kan, Tomuo Yamaguchi, Isao Suzuki, Mitsuru Aoyama, Masashi Kumagawa, Nelson L. Rowell, Aiguo Wang and Robert Rinfret
1747-1752 : Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
Harutoshi Tsuchiya, Takuji Okahisa, Fumio Hasegawa, Hajime Okumura and Sadafumi Yoshida
1753-1758 : Photocapacitance Measurement on Intentionally Undoped n-Type Ga0.9Al0.1As Grown by Stoichiometry Control Method
Jun-ichi Nishizawa, Mitsutake Motozawa, Yutaka Oyama, Kazushi Dezaki, Hiroyuki Fujishiro and Ken Suto
1759-1766 : Modulation Molecular Beam Epitaxy under Constant Low As Pressure
Takashi Suzuki and Tatau Nishinaga
1767-1772 : A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
Tomohiro Shibata, Jyoji Nakata, Yasushi Nanishi and Masatomo Fujimoto
1773-1777 : High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
Shingo Okamoto, Yoshihiro Hishikawa, Sadaji Tsuge, Manabu Sasaki, Kunimoto Ninomiya, Masato Nishikuni and Shinya Tsuda
1778-1780 : Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ- Doped GaAs/In0.25Ga0.75As/GaAs Pseudomorphic Heterostructures
Hir-Ming Shieh, Chang-Luen Wu, Wei-Chou Hsu, Yue-Huei Wu and Ming-Jer Kao
1781-1786 : Two-dimensional Analysis of Resonant Tunneling Using the Time-dependent Schrödinger Equation
Hideaki Taniyama, Masaaki Tomizawa and Akira Yoshii
1787-1792 : Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
Ting-Chang Chang, Chun-Yen Chang, Tz-Guei Jung, Wen-Chung Tsai, Guo-Wei Huang and Pei-Jih Wang
1793-1797 : Effects of the Variation in the Dose of the Injector Implant on the Endurance Characteristics of Floating Gate Electrically Erasable Programmable Read Only Memory Devices
Anjan Bhattacharyya
1798-1802 : Low-Temperature-Processed Poly-Si Thin-Film Transistors Using Solid-Phase-Crystallized and Liquid-Phase-Deposited Gate Oxide
Ching-Fa Yeh, Chun-Lin Chen, Yu-Chi Yang, Shyue-Shyh Lin, Tzung-Zu Yang and Tzy-Yan Hong
1803-1808 : Effect of Ge Concentration on Static and Microwave Performances in Ge xSi1- x Heterojunction Bipolar Transistors under High-Level Injection
Yih-Feng Chyan, Simon Ming Sze, Chun-Yen Chang and Rafael Reif
1809-1813 : Optimization of Antireflection Film Structures for Surface-Passivated Crystalline Silicon Solar Cells
Tadashi Saitoh, Osamu Kamataki and Tsuyoshi Uematsu
1814-1819 : Simultaneous Stress-Induced Al Extrusion and Void Formation Caused by High Temperature Annealing after Via-Hole Opening in Al Interconnects with Via-Holes
Hideki Shibata, Tadashi Matsuno and Kazuhiko Hashimoto
1820-1822 : Hole Accumulation in SiO2/Si3N4/SiO2 Capacitors Prior to Dielectric Breakdown
Masao Sawachi and Yasushiro Nishioka
1823-1830 : Novel Approach to Evaluation of Charging on Semiconductor Surface by Noncontact, Electrode-Free Capacitance/Voltage Measurement
Sadao Hirae, Motohiro Kohno, Hiroshi Okada, Hideaki Matsubara, Ikuyoshi Nakatani, Tatsufumi Kusuda and Takamasa Sakai
1831-1832 : Decay Behavior of Light-Induced ESR in Hydrogenated Amorphous Silicon-Nitrogen Alloys
Jinyan Zhang, Minoru Kumeda and Tatsuo Shimizu
1833-1834 : Chemical Etching of Thermally-Grown SiO2 Films on SiC Studied by Spectroscopic Ellipsometry
Susumu Ninomiya and Sadao Adachi
1835-1836 : Diffusion Length of Holes in n-ZnSe Measured by Schottky Barrier Photovoltage Method
Hironobu Kariyazono and Toshiyuki Ido
1837-1838 : Oxidation of Ultrathin SiGe Layer on Si(001): Evidence for Inward Movement of Ge
Kuniyil Prabhakaran, Takashi Nishioka, Koji Sumitomo, Yoshihiro Kobayashi and Toshio Ogino
1839-1846 : High-Pressure Synthesis and Electron Microscopic Study of 1212 Lead Cuprates (Pb, Cu)Sr2(Y, Ca)Cu2O z
Akira Ono and Shigeo Horiuchi
1847-1850 : Superconductivity of WC in the NaCl-Type Structure under Pressure
Mathrubutham Rajagopalan, Pannikar Saigeetha, Gopalakrishnan Kalpana and Balan Palanivel
1851-1855 : Preparation of Alkaline-Metal-Doped C60 Superconducting Film and Its Stabilization in Air with Protective Coatings
Nobuyuki Okuda, Hirokazu Kugai, Takasi Uemura, Kengo Okura, Yoshinobu Ueba and Koji Tada
1856-1862 : Voltage versus Flux Relation of DC Superconducting Quantum Interference Device Using Three Josephson Junctions
Keiji Enpuku and Hideki Doi
1863-1864 : Effectiveness of High-Pressure Synthesis of Bulk High-Temperature Superconductors of Hg-Ba-Ca-Cu-O System
Satoru Nakajima, Mami Kikuchi, Toshiyuki Atou, Masae Kikuchi and Yasuhiko Syono
1865-1871 : Polymer-C60 Composite with Ferromagnetism
Masafumi Ata, Masataka Machida, Haruo Watanabe and Jun'etsu Seto
1872-1875 : Temperature Dependence of ESR Lines Related to Phosphorus in Silicon
Masami Morooka, Masahiko Tokita, Tomohiko Kato and Ichiro Tsurumi
1876-1884 : Electron Spin Resonance and Mössbauer Studies of CaS:Eu Synthesized Using the Flux Method
Mai Pham-Thi, Nathalie Ruelle, Elisabeth Tronc, Danielle Simons and Daniel Vivien
1885-1889 : Relaxation Mechanism of Free Radicals in Silica Glass Studied by Pulsed-ESR Spectroscopy
Yukio Mizuta, Masahiro Kohno and Kanae Fujii
1890-1891 : Dependence of Coercivity on Co Layer Thickness in (111)Pd/Co Superlattices Grown by Molecular-Beam Epitaxy
Toshiki Kingetsu
1892-1898 : Dynamics of Photoexcited Carriers and Space-Charge Field by Picosecond Two-Beam Excitation in Photorefractive Semiconductors
Yasuo Tomita and Hidemoto Ishii
1899-1904 : Thermal Effect in a Lamp-Pumped Continuous-Wave Alexandrite Laser
Kenji Torizuka, Mikio Yamashita and Tukasa Yabiku
1905-1909 : Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror
Toshihiko Baba, Yukiaki Yogo, Katsumasa Suzuki, Fumio Koyama and Kenichi Iga
1910-1913 : Trainable Pattern Classifier Using a Computer-Generated Hologram
Ken Yuh Hsu, Chau-Jern Cheng and Tai-Chiung Hsieh
1914-1919 : Crosstalk in Photon-Mode Photochromic Multi-Wavelength Recording
Tsuyoshi Tsujioka, Yoshiaki Shimizu and Masahiro Irie
1920-1927 : Photoluminescence of Heavily p-Type-Doped GaAs: Temperature and Concentration Dependences
Horng Dar Chen, Ming Shiann Feng, Po An Chen, Kun Chuan Lin and Janne Wha Wu
1928-1930 : Evidence of Hybridization from a Direct Comparison of Semimagnetic and Nonsemimagnetic Ternary Lead Chalcogenides
Klaus H. Herrmann, Michael Happ, Klaus-Peter Möllmann, Frank Peuker, Jens W. Tomm, Harald Böttner and Maurus Tacke
1931-1936 : Optical Properties of Ion-Implanted Si layeres Studied by Spectroscopic Ellipsometry
Sadao Adachi, Takashi Matsumura and Takahiro Suzuki
1937-1943 : Optical Study of Photon-Trapped Porous Silicon Layer
Liang-Yao Chen, Xiao-Yuan Hou, Da-Ming Huang, Ping-Hai Hao, Fu-Long Zhang, Xing-Wei Feng, You-Hua Qian and Xun Wang
1944-1948 : Persistent Enhanced Conductivity Induced by Light Irradiation in Hydrazone-Polycarbonate Dispersions
Akiko Hirao, Hideyuki Nishizawa and Masahiro Hosoya
1949-1953 : Electric Field Effect on the Emission of Electron-Irradiation-Induced Defects in n-GaAs
Stewart A. Goodman, F. Danie Auret and Walter E. Meyer
1954-1958 : Electron Paramagnetic Resonance Studies of Defects in CdIn2S4 Single Crystals
Takeo Takizawa, Eric Christoffel, Alfred Goltzené and Claude Schwab
1959-1964 : Mechanism of Diffuse Phase Transition in Relaxor Ferroelectrics
Takaaki Tsurumi, Kouji Soejima, Toshio Kamiya and Masaki Daimon
1965-1969 : Dielectric, Elastic and Piezoelectric Properties of Li2B4O7 Single Crystals in the Temperature Range from 4 K to 900 K
Masaki Maeda, Hironari Tachi, Koichi Honda and Ikuo Suzuki
1970-1971 : Influence of Crystal Thermal History on Surface Recombination Lifetime at Elevated Temperatures in Magnetic-Field-Applied Czochralski Silicon
Hiroshi Daio, Andrzej Buczkowski and Fumio Shimura
1972-1976 : Novel Switching with Gray Scale in Surface-Stabilized Ferroelectric Liquid Crystal Devices
Mitsuhiro Koden, Akira Tagawa and Tomio Wada
1977-1985 : Numerical Evaluation of Silicon-Thin Film Growth from SiHCl3-H2 Gas Mixture in a Horizontal Chemical Vapor Deposition Reactor
Hitoshi Habuka, Masatake Katayama, Manabu Shimada and Kikuo Okuyama
1986-1990 : Spontaneous Extinction of Twin Surface in GaAs on Si(100) Grown by One-Step Low-Pressure Metal-Organic Chemical Vapor Deposition
Kiyotaka Sato, Kenji Togura and Keiji Sato
1991-1994 : Correlation between ZnSe Crystal Growth Conditions from Melt and Generation of Large-Angle Grain Boundaries and Twins
Peter Rudolph, Kazuyuki Umetsu, Han Jun Koh and Tsuguo Fukuda
1995-2003 : Characteristics of Grown-In Dislocations in Czochralski-Grown Benzophenone Single Crystals
Masaru Tachibana, Qi Tang, Naoki Ide and Kenichi Kojima
2004-2007 : A Model Analysis of the Thermal Conductivity of Ag-doped Bi-Sr-Ca-Cu-O Superconducting Oxide
Manabu Ikebe, Hiroyuki Fujishiro, Michiaki Matsukawa, Fumiaki Tatezaki, Hiromitsu Ogasawara, Koshichi Noto, Kazuo Michishita and Yukio Kubo
2008-2014 : Characteristics of Chlorine-Doped ZnSe Films and ZnSe-ZnS Superlattices Grown by Hot Wall Epitaxy
Shingo Sakakibara, Kouki Fujimoto, Noriyasu Amano, Kenei Ishino, Akihiro Ishida and Hiroshi Fujiyasu
2015-2018 : Physical Properties of Crystalline Films Prepared by Sputtering in Low Impurity Atmosphere
Haruhisa Ueda, Osamu Kitakami, Yutaka Shimada, Yoshiyuki Igari and Isao Kusunoki
2019-2024 : Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
Katsuhiro Fujino, Yuko Nishimoto, Noboru Tokumasu and Kazuo Maeda
2025-2030 : Surface and Interface Study of Titanium Nitride on Si Substrate Produced by Dynamic Ion Beam Mixing Method
Young Whoan Beag, Masayoshi Tarutani, Kyung-youl Min, Masato Kiuchi and Ryuichi Shimizu
2031-2034 : Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
Tien Sheng Chao, Tan Fu Lei, Chun Yun Chang and Chung Len Lee
2035-2040 : Plasma Etching Effect on Dangling Bonds and Nondiamond Components in Low- and High-Quality Diamond Films
Ichiro Watanabe, Katsuhiko Haruta and Yoshikazu Shimamura
2041-2042 : Growth of Epitaxial Co/Cu Superlattices with Surface Orientations of (111), (100) and (110) by DC Magnetron Sputtering
Toshiki Kingetsu and Fukio Yoshizaki
2043-2049 : Breakdown Characteristics of SF6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
Tatsuo Kawamura, Bok-Hee Lee, Takahiko Nishimura and Masaru Ishii
2050-2055 : Far-Infrared Laser Interferometry Measurements on the STP-3(M) Reversed-Field Pinch
Shigeyuki Kubota, Masaaki Nagatsu, Takashige Tsukishima, Hideki Arimoto, Koichi Sato and Akio Matsuoka
2056-2057 : Photoionization Spectra of High Rydberg Series and Ionization Potential of Ag
Toshiaki Ishikawa
2058-2065 : Scanning Laser Microscopy of Magneto-Optic Storage Media
C. David Wright, Warwick W. Clegg, Attia Boudjemline and Nicholas A. E. Heyes
2066-2071 : Three-Dimensional Electric Field Vector Measurements in Nitrobenzene Using Kerr Effect
Haruo Ihori, Sadahito Uto, Kimihiro Takechi, and Kiyomitsu Arii
2072-2078 : Quantum Noise of Fourier-Coded Aperture Imaging System
Chien Chou and Hong-Jueng King
2079-2086 : Shock Compaction of an Acicular Iron-Alloy Powder to Produce a Nanocrystalline Magnet
Ken-ichi Kondo, Hisako Hirai and Hideaki Oda
2087-2091 : Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile
Tahir Hussain, John Richard Adrian Cleaver and Haroon Ahmed
2092-2099 : Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
Genshiro Kawachi, Takashi Aoyama, Akio Mimura and Nobutake Konishi
2100-2106 : Optimized Welding of Stainless Steel Tubings for Corrosion Free Exposure to HBr Gas
Taeko Hattori, Hideki Takagi, Alain Boireau, Henri Chevrel, Eiichi Ozawa and Jean M. Friedt
2107-2112 : Fabrication and Evaluation of Flexible Microgripper
Yoshihiko Suzuki
2113-2118 : Application of Artificial Neural Network to Optical Fluid Analyzer
Makoto Kimura and Katsuhiko Nishida
2119-2122 : Fluorescence from Wing of Morpho sulkowskyi Butterfly
Kinya Kumazawa, Shingo Tanaka, Keishi Negita and Hiroshi Tabata
2123-2127 : Separate Measurement of Two Components of Blood Flow Velocity in Tissues by Dynamic Light Scattering Method
Susumu Kashima, Yoshiko Ono, Akihiko Sohda and Toshihiko Ohsawa
2128-2131 : Erythrocyte Sedimentation in Plasma Observed under Microscope
Atsuko Idonuma, Toshiaki Dobashi, Yoshiharu Toyama and Akio Sakanishi
Errata
-
2132-2132 : Flux Growth and Characterization of α-57Fe2O3 Single Crystals for Nuclear Bragg Scattering Optical Components
-
Carlos K. Suzuki, Humihiko Takei, Fumiko Sakai, Yoshitaka Yoda, Xiao W. Zhang, Takaya Mitsui, Yoshihiro Kudo, Koichi Izumi, Tetsuya Ishikawa, Hiroshi Sugiyama, Masami Ando, Hideo Ohno, Taikan Harami, Tadashi Matsushita and Seishi Kikuta
[ARCHIVES]
[SEARCH]
[REGISTRATION]
[JJAP ONLINE]
[JJAP HOME]
Copyright (C) 1994 Publication Board, Japanese Journal of Applied Physics