Table of Contents

Jpn. J. Appl. Phys. Vol.33(1994)
Part 1, No. 9B, 30 September 1994

Special Issue: Ferroelectric Materials & Their Applications

Thin Films

5119-5124 : Synthesis of Novel Sr Sources for Metalorganic Chemical Vapor Deposition of SrTiO₃: Takafumi Kimura, Hideaki Yamauchi, Hideaki Machida, Hiroshi Kokubun and Masao Yamada
5125-5128 : Preparation of BaTiO₃ Thin Films by Metalorganic Chemical Vapor Deposition Using Ultrasonic Spraying: In-Tae Kim, Choon-Ho Lee and Soon Ja Park
5129-5134 : Step Coverage and Electrical Properties of (Ba, Sr)TiO₃ Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)₂: Takaaki Kawahara, Mikio Yamamuka, Tetsuro Makita, Jiro Naka, Akimasa Yuuki, Noboru Mikami and Kouichi Ono
5135-5138 : Effects of O₃ on Growth and Electrical Properties of Pb(Zr, Ti)O₃ Thin Films by Photoenhanced Metalorganic Chemical Vapor Deposition: Masaru Shimizu, Hironori Fujisawa, Masataka Sugiyama and Tadashi Shiosaki
5139-5142 : Electrical Properties for Capacitors of Dynamic Random Access Memory on (Pb, La)(Zr, Ti)O₃ Thin Films by Metalorganic Chemical Vapor Deposition: Hiroshi Nakasima, Sigeki Hazumi, Tadashi Kamiya, Kouji Tominaga and Masaru Okada
5143-5146 : Uniform Ultra-Thin Pb(Zr,Ti)O₃ Films Formed by Metal-Organic Chemical Vapor Deposition and Their Electrical Characteristics: Hiroshi Miki and Yuzuru Ohji
5147-5150 : Preparation and Characterization of Sol-Gel Derived Epitaxial and Oriented Pb(Zr_0.52Ti_0.48)O₃ Thin Films: Keiichi Nashimoto and Shigetoshi Nakamura
5151-5154 : Preparation of Pb(Zr,Ti)O₃ Thin Films by Sol-Gel Technique: Tomoyasu Takusagawa, Noriaki Yamada, Terumasa Kato, Hajime Hattori and Teruyuki Matsui
5155-5158 : Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-Gel Technique: Katsuhiro Aoki, Yukio Fukuda, Ken Numata and Akitoshi Nishimura
5159-5166 : Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived PbZr_xTi_{1- x}O₃ Thin Films: Hidekazu Doi, Tsutomu Atsuki, Nobuyuki Soyama, Go Sasaki, Tadashi Yonezawa and Katsumi Ogi
5167-5171 : Control of Orientation of Pb(Zr, Ti)O₃ Thin Films Using PbTiO₃ Buffer Layer: Masaru Shimizu, Masataka Sugiyama, Hironori Fujisawa and Tadashi Shiosaki
5172-5177 : Interaction of PbTiO₃ Films with Si Substrate: Yushi Shichi, Satoshi Tanimoto, Takaaki Goto, Koichi Kuroiwa and Yasuo Tarui
5178-5181 : Electrical Properties of Ferroelectric BaMgF₄ Films on Si Substrates: Koji Aizawa and Hiroshi Ishiwara
5182-5186 : Crystallographic and Electrical Properties of Epitaxial BaTiO₃ Film Grown on Conductive and Insulating Perovskite Oxides: Yukio Watanabe, Yasuaki Matsumoto, Haruo Kunitomo, Mitsuru Tanamura and Erina Nishimoto
5187-5191 : Dielectric Properties of (Ba_xSr_{1- x})TiO₃ Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application: Takeharu Kuroiwa, Yoshikazu Tsunemine, Tsuyoshi Horikawa, Tetsuro Makita, Jyunji Tanimura, Noboru Mikami and Kazunao Sato
5192-5195 : Fabrication of Barium Titanate/Strontium Titanate Artificial Superlattice by Atomic Layer Epitaxy: Takaaki Tsurumi, Toshimasa Suzuki, Masayuki Yamane and Masaki Daimon
5196-5200 : Surface Morphology of Lead-Based Thin Films and Their Properties: Tsutomu Atsuki, Nobuyuki Soyama, Go Sasaki, Tadashi Yonezawa, Katsumi Ogi, Katsumi Sameshima, Kazuhiro Hoshiba, Yuichi Nakao and Akira Kamisawa
5201-5206 : Partial Switching Kinetics of Ferroelectric PbZr_xTi_{1- x}O₃ Thin Films Prepared by Sol-Gel Technique: Eisuke Tokumitsu, Noriaki Tanisake and Hiroshi Ishiwara
5207-5210 : Preparation of Pb(Zr,Ti)O₃ Thin Films on Ir and IrO₂ Electrodes: Takashi Nakamura, Yuichi Nakao, Akira Kamisawa and Hidemi Takasu
5211-5214 : Fatigue Characteristics of Sol-Gel Derived Pb(Zr, Ti)O₃ Thin Films: Kazushi Amanuma, Takashi Hase and Yoichi Miyasaka
5215-5218 : Effects of Oxygen Concentration on Growth of Bi₄Ti₃O₁₂ Thin Films by Metalorganic Chemical Vapor Deposition: Rusul Muhammet, Takashi Nakamura, Masaru Shimizu and Tadashi Shiosaki
5219-5222 : Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO₂ Buffer Layer: Tadahiko Hirai, Kazuhiro Teramoto, Takeharu Nishi, Takaaki Goto and Yasuo Tarui
5223-5226 : Preparation and Properties of Ru and RuO₂ Thin Film Electrodes for Ferroelectric Thin Films: Hiroshi Maiwa, Noboru Ichinose and Kiyoshi Okazaki
5227-5230 : Fabrication of PbTiO₃ Thin Films on TiSi₂/Si and Their Characterization: Naohisa Yahagi, Hitoshi Hatano, Soichiro Okamura, Koichi Takayama and Takeyo Tsukamoto
5231-5234 : Control of Grain Structure of Laser-Deposited (Ba, Sr)TiO₃ Films to Reduce Leakage Current: Pijush Bhattacharya, Kyung-ho Park and Yasushiro Nishioka
5235-5239 : Film Degradation in AlN Preparation by Facing Target System: Kikuo Tominaga, Kazuya Kusaka, Mufei Chong, Takao Hanabusa and Yoshihiro Shintani
5240-5243 : Fatigue and Refreshment of (Pb, La)TiO₃ Thin Films by Multiple Cathode Sputtering: Hiroshi Maiwa, Noboru Ichinose and Kiyoshi Okazaki
5244-5248 : Preparation of Pb(Zr, Ti)O₃ Thin Films by Multitarget Sputtering: Takashi Hase, Kazuo Hirata, Kazushi Amanuma, Naokichi Hosokawa and Yoichi Miyasaka
5249-5254 : Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering: Naoki Tanaka, Hiroshi Okano, Tatsuro Usuki and Kenichi Shibata
5255-5258 : Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO₃ Thin Films: Yukio Fukuda, Katsuhiro Aoki, Ken Numata and Akitoshi Nishimura
5259-5261 : Dielectric Property of Epitaxial Films of BaTiO₃ Synthesized by Laser Ablation: Takashi Nose, Hyun-Tak Kim and Hiromoto Uwe
5262-5264 : Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors: Hiroshi Funakoshi, Keigo Fumoto, Masanori Okuyama and Yoshihiro Hamakawa
5265-5267 : Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application: Yuichi Nakao, Takashi Nakamura, Akira Kamisawa, Hidemi Takasu, Nobuyuki Soyama, Tsutomu Atsuki and Katsumi Ogi
5268-5271 : Preparation of Dielectric Thin Films from Photosensitive Sol-Gel Solution: Nobuyuki Soyama, Go Sasaki, Tsutomu Atsuki, Tadashi Yonezawa and Katsumi Ogi
5272-5276 : Dielectric Properties of Multilayered Ferroelectric Thin Films Fabricated by Sol-Gel Method: Yutaka Ohya, Takashi Ito and Yasutaka Takahashi
5277-5280 : Film Thickness Dependence of Dielectric Properties of BaTiO₃ Thin Films Prepared by Sol-Gel Method: Takashi Hayashi, Naoto Oji and Hiroshi Maiwa
5281-5286 : Characteristic Change Due to Polarization Fatigue of Sol-Gel Ferroelectric Pb(Zr_0.4Ti_0.6)O₃ Thin-Film Capacitors: Takashi Mihara, Hitoshi Watanabe and Carlos A. Paz de Araujo
5287-5290 : Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation: Kazuyoshi Torii, Sakae Saitoh and Yuzuru Ohji
5291-5293 : High-Deposition-Rate Growth of Lead Titanate Zirconate Films by Reactive Electron Beam Coevaporation: Shoichi Mochizuki, Toshiyuki Mihara and Tadashi Ishida
5294-5296 : Pyroelectric Properties of La-Modified PbTiO₃ Thin Films Prepared by Screen Printing: Tomoaki Futakuchi and Kastumi Tanino
5297-5300 : Epitaxial Growth and Dielectric Properties of (Ba_0.24Sr_0.76)TiO₃ Thin Film: Kazuhide Abe and Shuichi Komatsu
5301-5304 : Fabrication of Ferroelectric Bi₄Ti₃O₁₂ Thin Films by Dipping Pyrolysis of Metal Naphthenates and Micropatterns by an Electron Beam: Atsushi Kakimi, Soichiro Okamura, Yukie Yagi, Katsumi Mori and Takeyo Tsukamoto
5305-5308 : Analysis of Interfacial Phase between Substrates and Lead Zirconate Titanate Thin Films Synthesized by Hydrothermal Method: Yoko Ohba, Koji Arita, Takaaki Tsurumi and Masaki Daimon
5309-5312 : Recrystallization and Microstructure in Electrophoretically Deposited Ferroelectric BaTiO₃ Films under CO₂-Laser Irradiation: Hirofumi Kakemoto, Mamoru Okutomi, Koichi Tsukamoto, Soichiro Okamura, Nobuyuki Koura and Takeyo Tsukamoto

Piezoelectrics

5313-5316 : Piezoelectric Properties of Nanostructure-Controlled Lead-Perovskite-Based Ceramics: Keiichi Takahashi, Masamitsu Nishida, Syunichiro Kawashima and Koichi Kugimiya
5317-5322 : Crystallographic and Ferroelectric Properties Subjected to Two-Dimensional Stress in c-Axis-Oriented PbTiO₃ Thin Films: Takashi Yamamoto and Hiroyuki Matsuoka
5323-5327 : Effects of dc Electric Field on Mechanical Properties of Piezoelectric Ceramics: Hiroaki Makino and Nobuo Kamiya
5328-5331 : Large Electromechanical Coupling Factors in Perovskite Binary Material System: Yohachi Yamashita
5332-5335 : Electric Properties of Pb(Sb_1/2Nb_1/2)O₃--PbTiO₃--PbZrO₃ Ceramics: Yasushi Kawamura and Hiromu Ohuchi
5336-5340 : Piezoelectric Properties of Fine-Grained Lead Zirconate Titanate Ceramics Modified with Pb(Sb_1/2Nb_1/2)O₃: Chanin Tapaonoi, Shinjiro Tashiro and Hideji Igarashi
5341-5344 : Nonlinear Stress-Strain Behavior of PbZrO₃--PbTiO₃ under Various Temperatures: Toshio Tanimoto, Kohji Yamamoto and Tohru Morii
5345-5347 : Relationship between Poling Condition and Heat Resisting Properties in Lead Zirconate Titanate: Masakazu Hirose, Mahoko Takada, Hitoshi Oka and Kazuo Miyabe
5348-5351 : Improvement of Temperature Dependence of Piezoelectric Elements: Kunihiro Nagata and Eiki Harashima
5352-5355 : Piezoelectric and Dielectric Properties for Doped Lead Zirconate Titanate Ceramics under Strong Electric Field: Takao Tani, Naoyoshi Watanabe, Kazumasa Takatori and Saburo Hori
5356-5360 : Piezoelectric Properties of Solid-Solution (Bi_{1- x}(PbBa)_x)(Ni_{(1- x)/2}Ti_{(1+ x)/2})O₃ Ceramics: Takeo Okuda, Masatoshi Yamada and Tadashi Takenaka
5361-5364 : Piezoelectric Vibratory Gyro-Sensor Using a Trident-Type Tuning Fork Resonator: Akira Satoh, Yoshiro Tomikawa and Kazumasa Ohnishi
5365-5369 : Piezoelectric Linear Motors for Driving Head Element of CD-ROM: Akira Yabuki, Manabu Aoyagi, Yoshiro Tomikawa and Takehiro Takano
5370-5373 : Transient Response Characteristics of a Same-Phase Drive-Type Ultrasonic Motor: Takehiro Takano, Yoshiro Tomikawa, Manabu Aoyagi and Chiharu Kusakabe
5374-5377 : Stepping Drive of Self-Oscillation-Type Ultrasonic Motor: Chiharu Kusakabe, Yoshiro Tomikawa, Takehiro Takano, Manabu Aoyagi and Shoichi Inamura
5378-5380 : Analysis of Sensitivity of Accelerometer Using Multilayer Piezoelectric Ceramics: Ken Sato, Kohichi Okamoto, Yoshiaki Fuda and Tetsuo Yoshida
5381-5384 : Hydrophone Sensitivity of Porous Pb(Zr, Ti)O₃ Ceramics: Katsuyoshi Ina, Toshimasa Mano, Seiji Omura and Kunihiro Nagata
5385-5388 : Transducer Performance for Leaky Wave in Layered Structure of Piezoelectric Ceramic Thin Plate and Acryl Plate: Kohji Toda and Yasuhiko Akutsu

Ferroelectrics and Dielectrics

5389-5392 : Electrooptic Properties of Two-Stage Sintered (Pb_{1- x}La_x)(Zr, Ti)O₃: X/65/35 Ceramics ( X=6--9): Kazuhiro Oshima and Kaoru Tsuzuki
5393-5396 : Dielectric Properties of Rare-Earth-Oxide-Doped BaTiO₃ Ceramics Fired in Reducing Atmosphere: Yoshikazu Okino, Hisamitsu Shizuno, Shinya Kusumi and Hiroshi Kishi
5397-5399 : Si LSI Process Technology for Integrating Ferroelectric Capacitors: Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu, Atsuo Inoue, Akihiro Matsuda, Tatsuo Otsuki and Nobuyuki Suzuoka
5400-5403 : Alkaline-Earth Complexes as Precursors for Metalorganic Chemical Vapor Deposition: Yuzo Tasaki, Ryo Sakamoto, Yoshimitsu Ogawa, Shuji Yoshizawa, Junichi Ishiai and Shinichiro Akase
5404-5406 : Pyroelectric IR Detectors Using Periodic Inverted Domains of LiTaO₃: Kiyoshi Nakamura and Moto Itagaki
5407-5411 : Synthesis and Properties of (1- x)PZN- xBZN Solid-Solution Compounds by Liquid-Evaporation Method: Sang-goo Kang, Hwan Kim, Koichiro Takahashi and Masayuki Tsukioka
5412-5415 : Initial Stage of Growth Process of Lead Titanate Fine Particles: Kenji Ishikawa, Nagaya Okada, Kazumasa Takada, Takashi Nomura, Minoru Hagino and Koichi Toyoda
5416-5419 : Dielectric and Piezoelectric Properties of Solid-Solution Ceramics BaPb[(Li_1/4Nb_3/4)Ti]O₃: Masaru Yokosuka and Masakazu Marutake
5420-5422 : Preparation and Properties of Pb[(Sc_1/2Nb_1/2)_0.575Ti_0.425]O₃ Ceramics: Masatoshi Adachi, Emi Miyabukuro and Akira Kawabata
5423-5426 : Dielectric Properties of Pb(Fe_1/2Nb_1/2)O₃-Based Ceramics: Noboru Ichinose and Nobuyuki Kato
5427-5430 : Dielectric Properties of Solid Solutions (1- x)Pb(In_1/2Nb_1/2)O₃- xPbZrO₃: Naohiko Yasuda and Takuya Mizuno
5431-5434 : Effect of Firing Atmosphere on Electrical Properties of Multilayer Semiconducting Ceramics Having Positive Temperature Coefficient of Resistivity and Ni-Pd Internal Electrodes: Atsushi Kanda, Shinjiro Tashiro and Hideji Igarashi

Optical Applications

5435-5439 : Optical Activity and Phase Transition of Pb_{1- x}La_x(Zr_yTi_z)_{1- x/4}O₃: Hiroshige Yoshii, Tsuyoshi Shimasaki, Masaaki Ichiki, Yosuke Itagaki, Toru Asahi, Kazuya Saito, Jinzo Kobayashi and Hiroyuki Ikawa
5440-5442 : Optical Switch Utilizing Total Reflection of (Pb, La)(Zr, Ti)O₃ Ceramics: Toshio Utsunomiya
5443-5448 : High-Reflectivity Self-Pumped Phase Conjugation and Mechanisms for Improvement of Response Speed: Zhiming Chen and Tadashi Shiosaki
5449-5452 : Photorefractive Effect in Bi₄Ge₃O₁₂: Osamu Kamada
5453-5456 : Method for Separating Linear and Circular Photogalvanic Effects and Its Application to Ferroelectric Lead Germanate: Yuichi Kamata, Sunao Kurimura, Yoshiaki Uesu and Boris A Strukov
5457-5459 : Proposal of a Modulator-Integrated Structure in Quasi-Phase-Matched Second Harmonic Generation: Sunao Kurimura and Yoshiaki Uesu
5460-5462 : Optical Associative Memory Using LiNbO₃:Fe Hologram and BaTiO₃ Phase Conjugate Mirror: Zhiming Chen, Makoto Yago, Masatoshi Adachi, Tadashi Shiosaki and Akira Kawabata

Microwave Materials

5463-5465 : Dielectric Properties of Ca-Based Complex Perovskite at Microwave Frequencies: Hiroshi Kagata and Junichi Kato
5466-5470 : Microwave Dielectric Characteristics of Ilmenite-Type Titanates with High Q Values: Jeong-Ho Sohn, Yoshiyuki Inaguma, Sang-Ok Yoon, Mitsuru Itoh, Tetsuro Nakamura, Seok-Jin Yoon and Hyun-Jai Kim
5471-5476 : Electronic Transport Properties of ZrTiO₄ at High Temperature: Shu Yamaguchi, Kiyoshi Kobayashi, Yoshiaki Iguchi, Noriaki Yamada and Terumasa Kato
5477-5481 : Effect of Additives on Microstructure Development and Ferroelectric Properties of Sr_0.3Ba_0.7Nb₂O₆ Ceramics: Shiro Nishiwaki, Junichi Takahashi and Kohei Kodaira
5482-5487 : Microwave Dielectric Properties for Ba(Mg_1/3Ta_2/3)O₃--A(Mg_1/2W_1/2)O₃ (A=Ba, Sr, and Ca) Ceramics: Mitsuru Furuya and Atsushi Ochi

Liquid Crystals

5488-5490 : Anomalous Behavior of Spontaneous Polarization in Ferroelectric Liquid Crystal Mixture: Yoshiaki Fuwa, Katsunori Myojin, Hiroshi Moritake, Masanori Ozaki, Katsumi Yoshino, Takeshi Tani and Koichi Fujisawa
5491-5493 : Unidirectional Layer Alignment in Ferroelectric Liquid Crystal with N^*-C^* Phase Sequence: Katsunori Myojin, Hiroshi Moritake, Masanori Ozaki, Katsumi Yoshino, Takeshi Tani and Koichi Fujisawa
5494-5497 : Holding Characteristic of Dark State in Antiferroelectric Liquid Crystal: Hitoshi Hayashi, Makoto Takemura, Yuichiro Yamada, Katsuhide Kikuchi, Kenji Takigawa, Masashi Inata, Yoshimasa Hijikata, Kazuaki Ezaka, Hitoshi Sindo, Hiroshi Orihara and Yoshihiro Ishibashi
5498-5502 : Phase Sequence in Smectic Liquid Crystals Having Fluorophenyl Group in the Core: Jun Hatano, Yoshihiro Hanakai, Hirokazu Furue, Hiroyuki Uehara, Shin'ichi Saito and Katsuyuki Murashiro
5503-5505 : Anomalous Phase Sequence in Binary Mixture of 3MC2PCPOPB and TFMHPOBC: Hiroshi Moritake, Masanori Ozaki, Hiroki Taniguchi, Kazuo Satoh and Katsumi Yoshino

Fundamentals

5506-5509 : Electron Emission from Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field: Masanori Okuyama, Jun-ichi Asano and Yoshihiro Hamakawa
5510-5513 : Determination of the Frequency Dependence of Complex Permittivity in the Pseudo-Microwave Range by an Advanced Perturbation Method: Takeshi Takahashi, Yasushi Iijima, Makoto Kobayashi and Taro Miura
5514-5517 : Preparation and Properties of Ceramics Prepared from Bi₄Ti₃O₁₂ Amorphous Material: Kazuo Shoji and Yasuo Uehara
5518-5520 : Effects of Pore Structure on Depolarizing Factor and Dielectric Constant of Porous Ceramics: Hisao Banno
5521-5524 : Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family: Jun Hatano, Tomonori Mukaigawa, Hiroyuki Uehara, Alexei Gruverman, Koichiro Takahashi and Ken Yukino
5525-5528 : Growth of 3-Inch-Diameter Li₂B₄O₇ Single Crystal Using the Resistance Heating Furnace: Tamotsu Sugawara, Ryuichi Komatsu and Tadashi Sugihara
5529-5532 : Behavior of Morphotropic Phase Boundary in Low-Temperature Sintered Lead Zirconate-Titanate Ceramics with BiFeO₃ and Ba(Cu_0.5W_0.5)O₃: Dunzhuo Dong, Kenji Murakami, Nagaya Okada and Shoji Kaneko
5533-5535 : Growth of Crack-Free 3-Inch-Diameter Lithium Tetraborate Single Crystals by Czochralski Method: Ryuichi Komatsu, Tadashi Sugihara and Satoshi Uda
5536-5539 : Domain Nucleation During Polarization Reversal in Lead Germanate: Alexei Gruverman, Nikolai Ponomarev and Koichiro Takahashi
5540-5542 : Pulse Response for High-Speed Nondestructive Readout in Ferroelectrics: Masayoshi Omura, Hiroyuki Yoshimori and Yoshihiro Ishibashi
5543-5548 : Ferroelectric Properties and Fatigue Characteristics of Bi₄Ti₃O₁₂ Thin Films by Sol-Gel Processing: Masahiro Toyoda, Yukio Hamaji, Kunisaburo Tomono and David A. Payne
5549-5554 : Variation of Dielectric Constant Affected by Domain Structure and Electric-Field-Induced Strain in Ferroelectric Ceramics: Yoichiro Masuda
5555-5558 : Acoustic Emission and Domain Switching in Tetragonal Lead Zirconate Titanate Ceramics: Yasuyoshi Saito and Saburo Hori
5559-5564 : Raman Scattering Study of Bismuth Layer-Structure Ferroelectrics: Seiji Kojima, Ryo Imaizumi, Shinichi Hamazaki and Masaaki Takashige
5565-5569 : Formation Mechanism of Self-Pumped Phase-Conjugate Mirror Using a Cu-Doped (K_0.5Na_0.5)_0.2(Sr_0.61Ba_0.39)_0.9Nb₂O₆ Crystal: Xin Gao, Akira Sasaki and Yujin Zheng
5570-5572 : Phonon Hole Burning in Piezoelectric Powder of KH₂PO₄ and SiO₂: Fujio Tsuruoka
5573-5576 : Charge Storage on Thin SrTiO₃ Film by Contact Electrification: Takayuki Uchihashi, Takahiro Okusako, Takeshi Tsuyuguchi, Yasuhiro Sugawara, Masaru Igarashi, Reizo Kaneko and Seizo Morita

[ARCHIVES] [SEARCH] [REGISTRATION] [JJAP ONLINE] [JJAP HOME]

Copyright (C) 1994 Publication Board, Japanese Journal of Applied Physics
Contact E-Mail : www@jjap.or.jp