JJAP Online
Jpn. J. Appl. Phys. Vol.35(1996)
Part 1, No. 1A, 15 January 1996
1-9 : Distribution of Grown-in Crystal Defects in Silicon Crystals Formed by Point Defect Diffusion during Melt-Growth: Disappearance of the Oxidation Induced Stacking Faults-Ring
Ryuichi Habu and Azusa Tomiura
10-15 : In0.52Al0.48As/In xGa1- xAs (0.53< x<1.0) Pseudomorphic High Electron Mobility Transistors with High Breakdown Voltages: Design and Performances
Jürgen Dickmann, Klaus Riepe, Arthur Geyer, Bernd E. Maile, Anton Schurr, Michael Berg and Heinrich Daembkes
16-21 : Compositional Relation of GaAs xSb1- x and Related Compounds in Metalorganic Chemical Vapor Deposition Using tBAs and TMSb as Group V Precursors
Naozo Watanabe and Yasuo Iwamura
22-25 : A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
Rong Zhao, Wai Shing Lau, Tow Chong Chong and Ming Fu Li
26-33 : New Interpretation of the Effect of Hydrogen Dilution of Silane on Glow-Discharged Hydrogenated Amorphous Silicon for Stable Solar Cells
Shingo Okamoto, Yoshihiro Hishikawa and Shinya Tsuda
34-38 : Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
Tadashi Saku, Yoshiji Horikoshi and Yasuhiro Tokura
39-43 : Pt/PZT/n- SrTiO3 Ferroelectric Memory Diode
Kohtaroh Gotoh, Hirotaka Tamura, Hideki Takauchi and Akira Yoshida
44-55 : Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part Two: Arsenic
Masayuki Yoshida and Eisuke Arai
56-60 : Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
Kazuhiro Yamashita, Masahiro Muro, Satoshi Kobayashi, Akiko Katsuyama and Masayuki Endo
61-66 : Characterization of InSb Interface with Oxide Films
Kenji Takahashi, Arata Onozuka and Yasuhiro Tanaka
67-70 : Effect of Ag2O Addition in Y0.9Ca0.1Ba2Cu4O8 on the Structure and Contact Resistivity of Y0.9Ca0.1Ba2Cu4O8/Ag
Teen-Hang Meen, Tzyy-Quen Tyan, Ying-Chung Chen and Hung-Duen Yang
71-75 : Raman Spectroscopic Study of YBa2Cu4O8 Thin Film Grown from Amorphous Precursor
Yukihisa Yoshida, Haruhisa Ohtsuka and Tadataka Morishita
76-81 : Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
Win-Der Lee, Tzong-Jer Yang and Bi-Shiou Chiou
82-89 : Ettingshausen and Nernst Effects of QMG- YBa2Cu3O7- δ in Magnetic Fields up to 14 T
Takako Sasaki, Mitsuru Sawamura, Satoshi Awaji, Kazuo Watanabe, Norio Kobayashi, Keiichi Kimura, Katuyoshi Miyamoto and Misao Hashimoto
90-92 : Characteristics of YBCO Josephson Junction Prepared by a Focused Ion Beam Technique
Manabu Fujimoto, Kunihiko Hayashi, Katsumi Suzuki and Youichi Enomoto
93-96 : The Role of Stress in Amorphous Magnetic Materials
Kalyan Mandal
97-100 : Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal Mirror
Toshihiko Baba, Ryoh Watanabe, Katsuhito Asano, Fumio Koyama and Kenichi Iga
101-106 : Effect of Pulse Duration on Ablation Characteristics of Tetrafluoroethylene-hexafluoropropylene Copolymer Film Using Ti:sapphire Laser
Shinki Nakamura, Katsumi Midorikawa, Hiroshi Kumagai, Minoru Obara and Koichi Toyoda
107-113 : Ferroelectric Microdomains in Ti-diffused LiNbO3 Optical Devices
Toshinori Nozawa and Shintaro Miyazawa
114-119 : Effect of Alkoxy Substitution on Photophysical Properties of Poly(p-phenylenevinylene)
Geon Joon Lee, Dongho Kim, Jeong Ik Lee, Hong Ku Shim, Yong Wan Kim and Jae Cheol Jo
120-123 : Spectral Shape Analysis of Photoluminescence Excitation in Semiconductors
Masatoshi Warashina and Michio Tajima
124-131 : Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
Mitsuru Sugawara
132-133 : Damped Longitudinal Optical Phonon-Hole Plasmon Modes in p-Type GaAs
Ryoichi Fukasawa and Sidney Perkowitz
134-139 : New Method of the Determination of HgCdTe/CdZnTe Composition by Infrared Transmission
Yongtaek Jeoung, Taeseok Lee, Hongkuk Kim, Jaemook Kim, Myungsu Han and Taewon Kang
140-143 : Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba0.7Sr0.3TiO3 Capacitors Integrated in a Silicon Device
Yasuhiro Shimada, Atsuo Inoue, Toru Nasu, Koji Arita, Yoshihisa Nagano, Akihiro Matsuda, Yasuhiro Uemoto, Eiji Fujii, Masamichi Azuma, Yoshiro Oishi, Shin-ichiro Hayashi and Tatsuo Otsuki
144-150 : X-Ray Investigations and Determination of the Dielectric Properties of the Compound Ba4.5Gd9Ti18O54
Matja\vz Valant, Danilo Suvorov and Drago Kolar
151-155 : Structure and Effective Pair Potential of Liquid Silicon
Kazuhiko Omote and Yoshio Waseda
156-159 : Two-Domain Liquid Crystal Displays Fabricated by Parallel Fringe Field Method
A. Lien and R. A. John
160-167 : Characterization of the Local Layer Structure of a Broad Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-Ray Micro-Diffraction
Atsuo Iida, Takashi Noma and Hirokatsu Miyata
168-174 : Photoinduced Destruction of Polar Structure in Dye-Pendant Polymers Studied by Second-Harmonic Generation
Hiroaki Aoki, Ken Ishikawa, Hideo Takezoe and Atsuo Fukuda
175-178 : Undercooled Liquid Viscosity and Glass Formation of a Mg62Cu26Y12 Alloy
Shyue-Sheng Wu, Tsung-Shune Chin, Kuo-Chang Su and Fuh-Shuenn Shyr
179-181 : Structural Investigations on (Ba xSr1- x)(Zr yTi1-( y+ δ)Ta δ)O3 Dielectric Resonator Compounds Used for Microwave Applications
John Joseph, T. M. Vimala, K. C. James Raju and V. R. K. Murthy
182-185 : Characterization of Czochralski Silicon Wafers Grown at a Low Growth Rate by Photoluminescence Spectroscopy
Mototsugu Hamada and Takashi Katoda
186-190 : Monte Carlo Simulation of Grain Boundary Cross Effect on Hydrogen Diffusivity in Aluminum
Minoru Ichimura and Yasushi Sasajima
191-199 : Preparation of CuInSe2 Thin Films by Chemical Spray Pyrolysis
Sho Shirakata, Tomonori Murakami, Tetsuya Kariya and Shigehiro Isomura
200-204 : Functionally Gradient NiTi Films Fabricated by Sputtering
Sotohiro Takabayashi, Katsumi Tanino, Shigeru Fukumoto, Yoshitugu Mimatsu, Shinya Yamashita and Yoshio Ichikawa
205-209 : Sol-Gel Processing of Pb1-xLaxTi1-x/4O3 Thin Films
Ko Ko Kyaw Soe, Masaki Maeda and Ikuo Suzuki
210-215 : Effects of Sol-Gel Processing Variables on the Texture Growth of LiNbO3 Thin Film
Dong Hoon Won, Nam Hwi Hur and Kwangsoo No
216-220 : Effect of CO2 Addition on Diamond Growth by DC Arc Plasma Jet Chemical Vapour Deposition
Akira Higa, Akimitsu Hatta, Toshimichi Ito, Minoru Toguchi and Akio Hiraki
221-225 : Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing*1
Kyung-youl Min, Yosuke Suzuki, Riichirou Mitsuhashi, Masahiko Inoue, Ryuichi Shimizu and Siegfried Hohmann
226-233 : Microscopic Kinetic Mechanism in Current-Induced Conversion on Si(001) Vicinal Surface
Hirokazu Ohmi, Tetuya Uchida and Koh Wada
234-241 : Observation of Molecular Layers in (2-(4,5-bis(thiomethyl)-1,3-dithiol-2-ylidene)-5- (4,5-ethylenedithio-1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene) (TMET-TTP) Single Crystals by Means of Scanning Tunneling Microscopy
Teruo Takahashi, Takehiko Mori, Ken Ishikawa, Hideo Takezoe, Atsuo Fukuda, Yohji Misaki and Tokio Yamabe
242-246 : Suppression of the Phase Transition to C54 TiSi2 due to Epitaxial Growth of C49 TiSi2 on Si(001) Substrates in Silicidation Process
Satoshi Komiya, Hirofumi Tomita, Kazuto Ikeda, Yoshimasa Horii and Tomoji Nakamura
247-250 : Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar+
Taro Fukusho, Atsushi Tanabe, Hiroshi Kudo, Toyoyuki Ishihara and Seiji Seki
251-258 : Investigation of Discharge Phenomena in a Cell of Color Plasma Display Panel I. One-Dimensional Model and Numerical Method
Kazuo Takahashi, Seishiro Hashiguchi, Yukio Murakami, Makoto Takei, Kazuhiro Itoh, Kunihide Tachibana and Tetsuo Sakai
259-265 : Corona-Triggering Surface Discharge Switch
Nobuhiko Hamana, Tetsu Miyamoto, Teruyuki Miyazato and Keiichi Takasugi
266-273 : Construction of a 100-Hz-Repetition-Rate 28-Channel Thomson Scattering System for the JIPPT-IIU Tokamak
Kazumichi Narihara, Kenji Yamauchi, Takashi Minami, Ichihiro Yamada, Kohnosuke Sato, Kazuo Kawahata, Yasuji Hamada, Mamoru Kojima and Satoru Hirokura
274-275 : Electron Cyclotron Resonance Ion Source for Ion Thruster
Shin Satori, Kazutaka Nishiyama, Hitoshi Kuninaka and Kyoichi Kuriki
276-280 : Frequency Detuning and Stabilization of a Diode Laser Using the Zeeman Shift of the Saturated Absorption Signal of Rubidium Atoms
Ho Seong Lee, Sung Hoon Yang, Young Bum Kim, Sang Eon Park, Hyuck Cho and Jong Dae Park
281-289 : Molecular Orientation of all- trans- β-Carotene in Spin-Coated Film and in Langmuir-Blodgett Film as Detected by Polarized Optical Absorption and Reflection Spectroscopies
Hideki Hashimoto, Dai Kiyohara, Yoshitaka Kamo, Hiroshi Komuta and Yuzo Mori
290-293 : Neuron-Type Conducting Polymers Prepared Electrochemically and Their Connection
Masaharu Fujii, Takenori Izawa, Hideomi Ohnishi, Kiyomitsu Arii and Katsumi Yoshino
294-298 : Conducting Polypyrrole-Silica Glass Composite Films Prepared by Electrochemical Polymerization
Mitsuyoshi Onoda, Tetsuro Matsuda and Hiroshi Nakayama
299-303 : Improvement of the Pumping Efficiency in an Optically Pumped Cesium Beam Tube with a (σ + π)-Polarized Laser
Ho Seong Lee, Sung Hoon Yang, Young Bum Kim, Jin Ok Kim, and Cha Hwan Oh
304-307 : Simple Multipurpose Cryostat for Experiments Using High Magnetic Field
Kazu Nishigaki and Minoru Takeda
308-312 : Characterization and Fabrication of Chimney-Shaped Metal Field Emitters
Huang-Chung Cheng, Chih-Chong Wang, Tzu-Kun Ku and Iing-Jar Hsieh
313-315 : A New Experimental Arrangement for Energy Loss Measurements
Anuradha Bhagwat and Devesh Kumar Avasthi
316-319 : Nonthermal Influence of Microwave Power on Chemical Reactions
Chokichiro Shibata, Tomohiro Kashima and Kimihiro Ohuchi
Errata
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320-320 : Experimental Evaluation of Surface Tension Criteria for Alignment Behavior of Liquid Crystals on Solid Surfaces
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Fumio Nakano, Masato Isogai, Hisao Yokokura
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Copyright (C) 1996 Publication Board, Japanese Journal of Applied Physics