Table of Contents

Jpn. J. Appl. Phys. Vol.37(1998)
Part 1, No. 9B, 30 September 1998

Special Issue: Ferroelectric Materials and Their Applications

Thin Films

5101-5103 : Electrode Metal Dependence of Leakage Current Characteristics of Epitaxial BaTiO₃ Films on p- and n-Type Electrodes: Motochika Okano, Daisuke Sawamura and Yukio Watanabe
5104-5107 : Preparation and Dielectric Property of BaTiO₃-SrTiO₃ Artificially Modulated Structures: Takaaki Tsurumi, Takamitsu Miyasou, Yurika Ishibashi and Naoki Ohashi
5108-5111 : Ferroelectric Properties of SrRuO₃/(Ba, Sr)TiO₃/SrRuO₃ Epitaxial Capacitor: Takashi Kawakubo, Shuichi Komatsu, Kazuhide Abe, Kenya Sano, Naoko Yanase and Noburu Fukushima
5112-5117 : Effects of Post-Annealing Temperatures and Ambient Atmosphereson the Electrical Properties of Ultrathin (Ba,Sr)TiO₃ Capacitors: Po-ching Chen, Hiroshi Miki, Yasuhiro Shimamoto, Yuichi Matsui, Masahiko Hiratani and Yoshihisa Fujisaki
5118-5122 : Preparation of Lead Titanate Thin Films Using Langmuir-Blodgett Method: Hiroshi Sugai, Nobuo Hoshi, Takashi Iijima and Hiroshi Masumoto
5123-5125 : Control of the Microstructure of (Pb,La)TiO₃ Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory: Ju Cheol Shin, Jae Wan Hong, Jong Myeong Lee, Cheol Seong Hwang, Hyeong Joon Kim and Zheong-Gu Khim
5126-5127 : \gamma -Ray Total Dose Radiation Effects of Pt/PbZr_0.52Ti_0.48/Pt and Au/PbTiO₃/YBa₂Cu₃O_7-\delta Ferroelectric Capacitors: Jianxia Gao, Lirong Zheng, Jianming Zeng and Chenglu Lin
5128-5131 : Effect of PbTiO₃ Seeding Layer on the Growth of Sol-Gel-Derived Pb(Zr_0.53Ti_0.47)O₃ Thin Film: Kenji Ishikawa, Kazunari Sakura, Desheng Fu, Shiro Yamada, Hisao Suzuki and Takashi Hayashi
5132-5136 : Influence of the Purity of Source Precursors on the ElectricalProperties of Pb(Zr, Ti)O₃ Thin Films Prepared by MetalorganicChemical Vapor Deposition: Hironori Fujisawa, Masahiro Yoshida, Masaru Shimizu and Hirohiko Niu
5137-5140 : Thermally Stimulated Current and Polarization Fatiguein Pb(Zr,Ti)O₃ Thin Films: Hirotake Okino,Yoshiaki Toyoda,Masaru Shimizu,Toshihisa Horiuchi,Tadashi ShiosakiandKazumi Matsushige
5141-5144 : Material Properties of Heteroepitaxial Ir and Pb(Zr_xTi_1-x)O₃Films on (100)(ZrO₂)_1-x(Y₂O₃)_x/(100)Si Structure Prepared by Sputtering: Susumu Horita, Sadayoshi Horii and Shinya Umemoto
5145-5149 : Fabrication of PbZr_xTi_1-xO₃ Films on Si Structures Using Y₂O₃ Buffer Layers: Byung-Eun Park, Shigeto Shouriki, Eisuke Tokumitsu and Hiroshi Ishiwara
5150-5153 : Characterization of Pb(Zr, Ti)O₃ Thin Films on Si Substrates Using MgOIntermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices: Junji Senzaki, Koji Kurihara, Naoki Nomura, Osamu Mitsunaga,Yoshitaka Iwasaki and Tomo Ueno
5154-5157 : Relationship between Pyroelectric Properties and Electrode Sizes in (Pb, La)(Zr, Ti)O₃ (PLZT) Thin Films: Masafumi Kobune, Haruo Ishito, Atsushi Mineshige, Satoshi Fujii, RyoichiTakayama and Atsushi Tomozawa
5158-5161 : Preparation of 0.92PbZrO₃-0.03PbTiO₃-0.05Pb(Zn_1/3Nb_2/3)O₃ Pyroelectric Thick Films by Screen Printing: Tomoaki Futakuchi, Yoshinari Matsui and Masatoshi Adachi
5162-5165 : Electric Fatigue in Antiferroelectric and Ferroelectric Pb(Zr, Sn, Ti)NbO₃ Thin Films Prepared by Sol-Gel Process: Jae Hyuk Jang and Ki Hyun Yoon
5166-5170 : Effect of Grain Size on Bi₄Ti₃O₁₂ Thin Film Properties: Masaki Yamaguchi and Takao Nagatomo
5171-5173 : Preparation of Bi₄Ti₃O₁₂ Thin Film on Si(100) Substrate Using Bi₂SiO₅ Buffer Layer and Its Electric Characterization: Takeshi Kijima and Hironori Matsunaga
5174-5177 : Size Effect of the Dielectric Properties in Bismuth-Based Layer- Structured Ferroelectric Films: Masakazu Hamada, Hitoshi Tabata and Tomoji Kawai
5178-5184 : Low-Temperature Synthesis of SrBi₂Ta₂O₉ Ferroelectric Thin Films through the Complex Alkoxide Method: Effects of Functional Group, Hydrolysis and Water Vapor Treatment: Kazumi Kato
5185-5188 : Preferred Orientation, Phase Formation and the Electrical Properties of Pulsed Laser Deposited SrBi₂Ta₂O₉ Thin Films: Norifumi Fujimura, Darin T. Thomas, Stephen K. Streiffer and Angus I. Kingon
5189-5191 : Effects of Morphological Changes of Pt/SrBi₂Ta₂O₉ Interface on the Electrical Properties of Ferroelectric Capacitor: Dong Suk Shin, Ho Nyung Lee, Chang Woo Lee, Yong Tae Kim and In Hoon Choi
5192-5197 : Effects of H₂ Sintering and Pt Upper Electrode on Metallic Bi Content in Sr_0.9Bi_2.1Ta₂O₉ Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method: Ichiro Koiwa, Takao Kanehara, Hiroyo Kato, Sachiko Ono, Akira Sakakibara, Tetsuya Osaka and Katsuhiko Asami
5198-5202 : Imprint Characteristics of SrBi₂Ta₂O₉ Thin Films with Modified Sr Composition: Takashi Hase, Takehiro Noguchi, Koichi Takemura and Yoichi Miyasaka
5203-5206 : Voltage Shift Effect on Retention Failure in Ferroelectric Memories: Keisaku Nakao, Yuji Judai, Masamichi Azuma, Yasuhiro Shimada and Tatsuo Otsuki
5207-5210 : Application of Sr₂Nb₂O₇ Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor: Yoshikazu Fujimori, Naoki Izumi, Takashi Nakamuraand Akira Kamisawa
5211-5214 : Growth of Ba₂NaNb₅O₁₅ Thin Films on MgO(100) by the Pulsed Laser Ablation Method: Shizutoshi Ando, Kaoru Konakahara, Soichiro Okamura and Takeyo Tsukamoto
5215-5219 : Synthesis of Highly Oriented Tungsten Bronze K(Pb_0.6Ba_0.4)₂Nb₅O₁₅ Thin Films by the Chemical Solution Deposition Method: Wataru Sakamoto, Kana Kosugi, Toshinobu Yogo and Shin-ichi Hirano
5220-5223 : Growth of ZnO Thin Films on LiNbO₃ Substrates by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy: Hee-Bog Kang, Kenji Yoshida and Kiyoshi Nakamura
5224-5226 : Influence of Target Shape on Properties of AlN Sputtered Film: Kikuo Tominaga, Yoshifumi Sato, Ichiro Mori, Kazuya Kusaka and Takao Hanabusa

Ferroelectrics

5227-5231 : Influence of the Microstructure Evolution on Electrical Properties of MultilayerCapacitor with Ni Electrode: Youichi Mizuno, Yoshikazu Okino, Noriyuki Kohzu, Hirokazu Chazono and Hiroshi Kishi
5232-5236 : Preparation of (Ba_xSr_{1- x})TiO₃ Particles by Vapor-Phase Hydrolysis ofPrecursors Formed from Alkoxide-Hydroxide: Takashi Hayashi, Hiroshi Shinozaki and Kyoichi Sasaki
5237-5240 : Study of the Valence State of the Manganese Ions in PbTiO₃ Ceramics by Means of ESR: Koichi Hayashi, Akira Ando, Yukio Hamaji and Yukio Sakabe
5241-5245 : Poling Field Dependence of Ferroelectric Properties and Crystal Orientation in Rhombohedral Lead Zirconate Titanate Ceramics: Toshio Ogawa and Koji Nakamura
5246-5248 : Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_1/3Nb_2/3)O₃/9%PbTiO₃: Kouji Fujishiro, Rostislav Vlokh, Yoshiaki Uesu, Yasusada Yamada, Jean-Michel Kiat, Brahim Dkhil and Yohachi Yamashita
5249-5252 : Cationic Ordering Structures of Lead Magnesium Niobates with Isovalent Dopants Having Different Ionic Radii: Byung-Kook Kim, Seok-Bae Cha, Jae-Hwan Park and Soon Ja Park
5253-5256 : Core/Shell Structure in Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃: Tsuneo Mishima, Kousei Kamigaki and Shinji Nambu
5257-5260 : Ferroelectricity and Phase Transformations in Pb(Mg_1/3Nb_2/3)O₃-PbZrO₃ Solid Solution Ceramics: Masaru Yokosuka
5261-5264 : Dielectric, Pyroelectric and Piezoelectric Properties of 0.4Pb(Mg_1/3Nb_2/3)O₃-0.3Pb(Mg_1/3Ta_2/3)O₃-0.3PbTiO₃ Ceramics Modified with Cr₂O₃: Jong Man Jung and Seong Won Choi
5265-5268 : Dielectric Properties and Microstructures of Solid Solutions of (1-x)Pb(Mg_1/3Nb_2/3)O₃-xPb(In_1/2Nb_1/2)O₃: Kwang-Ho Lee and Hwan Kim
5269-5272 : Microscopic Examination of the Microwave Sintered (Pb_0.6Sr_0.4)TiO₃ Positive-Temperature-Coefficient Resistor Materials: Chen-Chia Chou, Hon-Yi Chang, I-Nan Lin, Bin-Jen Shaw and Jian-Tao Tan
5273-5276 : Preparation and Properties of SrBi₂Ta₂O₉ Ceramics: Kazuo Shoji, Mizuka Aikawa, Yasuo Uehara and Koichiro Sakata
5277-5279 : Growth and Optical Properties of FerroelectricK₃Li₂Nb₅O₁₅ Single Crystals: Tomoaki Karaki, Kenya Miyashita, Mayumi Nakatsujiand Masatoshi Adachi
5280-5284 : Effects of Stoichiometry and A-site Substitution on the Electrical Properties of Ferroelectric YMnO₃: Tamaki Shimura, Norifumi Fujimura, Shigeki Yamamori, Takeshi Yoshimura and Taichiro Ito

Piezoelectrics

5285-5287 : Effect of Y and Mn Doping in Pb(T, Zr)O₃ Piezoelectric Ceramics on the Resonant Frequency and Capacitance Changes and Aging by Thermal Shock Tests: Keiichi Takahashi, Masamitsu Nishida and Hiroyuki Hase
5288-5291 : Effects of B-site Ions on the Electromechanical Coupling Factors of Pb(B^'B^'')O₃-PbTiO₃ Piezoelectric Materials: Yohachi Yamashita, Kouichi Harada, Yasuharu Hosono, Shinya Natsume and Noboru Ichinose
5292-5296 : Nonlinear Piezoelectric Effect in Ferroelectric Ceramics: Sadayuki Takahashi, Mitsuru Yamamoto and Yasuhiro Sasaki
5297-5300 : Electric-Field-Induced Strain in Lead Lanthanum Zirconate Titanate Ceramics: Yoshikazu Akiyama and Takashi Hayashi
5301-5305 : Electromechanical Fatigue of Lead Zirconate Titanate Ceramics: Hiroaki Makino and Nobuo Kamiya
5306-5310 : Lifetime and Degradation Mechanism of Multilayer Ceramic Actuator: Jirawat Thongrueng, Toshio Tsuchiya and Kunihiro Nagata
5311-5314 : Lead-Free Piezoelectric Ceramics of (Bi_1/2Na_1/2)TiO₃-KNbO₃-1/2(Bi₂O₃· Sc₂O₃) System: Hajime Nagata and Tadashi Takenaka
5315-5317 : Li-Substitution Effect and Ferroelectric Properties in Piezoelectric Semiconductor ZnO: Akira Onodera, Keiji Yoshio, Hiroyasu Satoh, Haruyasu Yamashita and Noboru Sakagami
5318-5321 : Inharmonic Overtone Spurious Mode Suppression by Partial Mass-Loading onto the Electrode for Energy-Trapped-Type Thickness-Extensional-Mode Piezoelectric Ceramic Resonators: Yoshinari Yamashita, Yasunobu Oikawa and Masanobu Sugimoto
5322-5325 : The Measurement of High-Power Characteristics for a Piezoelectric Transducer Based on the Electrical Transient Response: Mikio Umeda, Kentaro Nakamura and Sadayuki Ueha
5326-5329 : Characteristics of a 1st Radial-Vibration-Mode-Disk Coupler-Type Piezoelectric Ceramic Transformer: Katsutoshi Sakurai, Shigeki Shindou, Kazumasa Ohnishi and Yoshiro Tomikawa
5330-5333 : Influence of Load Resistance on Higher Harmonic Voltages Generated in a Piezoelectric Transformer: Keisuke Ishii, Norihito Akimoto, Shinjiro Tashirio and Hideji Igarashi
5334-5337 : Measurement of the Sound Velocity in Liquids Using a Leaky Lamb Wave Transducer Composed of a Layer-Structured Substrate: Kenji Motegi and Kohji Toda
5338-5341 : Durability Properties of Piezoelectric Stack Actuator: Takenobu Sakai and Hiroshi Kawamoto
5342-5344 : Application of Gas Jet Deposition Method to Piezoelectric Thick Film Miniature Actuator: Andreas Schroth, Ryutaro Maeda, Jun Akedo and Masaaki Ichiki
5345-5348 : Trapped Energy Gyroscopes Using Thickness Shear Vibrations in a Partially Polarized Piezoelectric Ceramic Plate: Hiroshi Abe, Tetsuo Yoshida, Toshihiro Ishikawa, Noriko Miyazaki and Hiroshi Watanabe

Microwave Materials

5349-5352 : Fundamental Studies on Scanning Electron-Beam Dielectric Microscopy: Yasuo Cho and Kazuhiko Yamanouchi
5353-5356 : Measurement of Complex Dielectric Constant above Room Temperatureand Its Application to Determination of Intrinsic Dielectric Loss: Masaaki Ikeda and Taro Miura
5357-5359 : Microwave Dielectric Properties and Sintering of Ba_6-3xR_8+2xTi₁₈O₅₄ (R = Sm, x=2/3) Solid Solution with Added Rutile: Hitoshi Ohsato, Atsushi Komura, Yuji Takagi, Susumu Nishigaki and Takashi Okuda
5360-5363 : Microwave Dielectric Properties of Y₂Ba(Cu_1-xZn_x)O₅ Solid Solutions: Masahiro Watanabe, Hirotaka Ogawa, Hitoshi Ohsato and Colin Humphreys
5364-5366 : Dielectric Properties of Rare-Earth-Added Cordierite at Microwave and Millimeter Wave Frequencies: Takeshi Okamura and Tetsuya Kishino
5367-5371 : Microwave Dielectric Properties and Far Infrared Reflectivity Spectra of the (Zr_0.8Sn_0.2)TiO₄ Ceramics with Additives: Woo Sup Kim, Tae Hong Kim, Eung Soo Kim and Ki Hyun Yoon

Polymers and Liquid Crystals

5372-5374 : Effect of Hydrostatic Pressure on Dielectric Behavior and Phase Transition in Ferroelectric Polymers: Toshinao Yuki, Shinji Ito, Tomonori Koda and Susumu Ikeda
5375-5378 : Temperature Dependence of Switching Characteristics in Polyurea-5 Thin Films: Yoshiro Tajitsu, Kazufumi Ishida, Shintarou Kanbara, Hiroji Ohigashi, Munehiro Date and Eiichi Fukada
5379-5381 : Optical Recording in Ferroelectric Liquid Crystal Using N*-SmC* Phase Transition: Keizo Nakayama, Masanori Ozaki and Katsumi Yoshino
5382-5384 : Field Induced Domains in Antiferroelectric Liquid Crystals: Syuichi Tatemori, Hiroyuki Uehara, Jun Hatano,Hideo Saito,Shin'ichi Saito and Eiji Okabe

Fundamentals

5385-5393 : Change of Macroscopic and Microscopic Symmetry of Barium Titanate Single Crystal around Curie Temperature: Satoshi Wada, Takeyuki Suzuki, Minoru Osada, Masato Kakihana and Tatsuo Noma
5394-5396 : Banded Structure and Domain Arrangements in PbTiO₃ Single Crystals: Chen-Chia Chou and Cheng-Sao Chen
5397-5399 : Atomic Force Microscope Observation of 90^° Domain Structure in the Crystallized Grains from Amorphous PbTiO₃: Masaaki Takashige, SinIchi Hamazaki, Naoko Tashiro, Fuminao Shimizu and Min Su Jang
5400-5405 : Structural Phase Transitions in Zr-Rich Lead Zircon Titanate by Raman Scattering: Seiji Kojima and Xianling Dong
5406-5409 : Raman Scattering Studies of Pb(Zr_xTi_1-x)O₃ and Pb_1-3y/2Nd_y(Zr_xTi_1-x)O₃ Ceramics with UV and Visible Laser Lights: Johannes Frantti Vilho Lantto and Masato Kakihana
5410-5412 : Raman Scattering in Relaxor Pb(Zn_1/3Nb_2/3)O₃: Hidehiro Ohwa, Makoto Iwata, Naohiko Yasuda and Yoshihiro Ishibashi
5413-5417 : Nonlinear Dielectric Response in Relaxor Ferroelectrics (1-x)Pb(Mg_1/2W_1/2)O₃-xPbTiO₃ (x=0.5): Makoto Iwata, Ryuichi Kamei, Hiroshi Orihara, Yoshihiro Ishibashi, Hidehiro Ohwa and Naohiko Yasuda
5418-5420 : Principle and Application of Crystallo-optical Effects Induced by Inhomogeneous Deformation: Rostyslav Vlokh, Myroslav Kostyrko and Igor Skab
5421-5423 : Improvement of Field-Induced Electron EmissionUsing Ir or IrO₂ Electrode and Ferroelectric Film Coating: Yasuhiro Kuratani,Yasuomi Morikawa andMasanori Okuyama

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