Table of Contents

Jpn. J. Appl. Phys. Vol.38(1999)
Part 1, No. 4B, 30 April 1999

Special Issue: Solid State Devices & Materials

Si Devices

2183-2187 : Merged DRAM with Logic/Analog (MDLA) Technology for Single-Chip Solution: Jong Shik Yoon, Sunil Yu, Hyae Ryoung Lee, Chul-Soon Kwon, Dong Woo Kim, Won Chul Kim and Chang-Sik Choi
2188-2193 : An Analytical Delay Model for Read Operation at Any Position on Dyamic Random Access Memory Bit Lines: Hongchin Lin, Chia-Hsiang Shaand Shyh-Chyi Wong
2194-2199 : Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr)TiO₃ Capacitors for Future Dynamic Random Access Memories: Tomonori Aoyama, Masahiro Kiyotoshi, Soichi Yamazaki and KazuhiroEguchi
2200-2204 : Electrical Properties of (Ba, Sr)TiO₃ Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing: Shuji Sone, Reiko Akahane, Koji Arita,Hisato Yabuta, Shintaro Yamamichi, Masaji Yoshida and Yoshitake Kato
2205-2209 : Conformal Step Coverage of (Ba,Sr)TiO₃ Films Prepared by Liquid Source CVD Using Ti(t-BuO)₂(DPM)₂: Takaaki Kawahara, Shigeru Matsuno, Mikio Yamamuka, Masayoshi Tarutani,Takehiko Sato,Tsuyoshi Horikawa, Fusaoki Uchikawa and Kouichi Ono
2210-2214 : New Self-Convergent Programming Method for Multilevel AND Flash Memory: Evans Ching-Song Yang, Wei-Jer Wong, Yen-Sen Wang, Rick Shih-Jye Shen and Charles Ching-Hsiang Hsu
2215-2218 : Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N₂O-Plasma Gate Oxide: Nae-In Lee, Jin-Woo Lee andChul-Hi Han
2219-2222 : Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown: Felice Crupi, Robin Degraeve, Guido Groeseneken, Tanya Nigam and Herman Maes
2223-2226 : Soft Breakdown in Ultrathin SiO₂ Layers: the Conduction Problem from a New Point of View: Enrique Miranda, JSuñé, Rosana Rodríguez, Montserrat Nafría,Ferran Martín and Xavier Aymerich
2227-2231 : Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 µm MOSFETs: Tomohiro Saito, Atsushi Yagishita, Seiji Inumiya, Kazuaki Nakajima, Yasushi Akasaka,Yoshio Ozawa, Hiroyuki Yano, KatsuhikoHieda, Kyoichi Suguro,Tsunetoshi Arikado and Katsuya Okumura
2232-2237 : Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology: Udo Schwalke, Marc Füldner, WalterZatsch, Katja Bothe, DariuschHadawi,Ingold Janssen and Peter Schon
2238-2242 : Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond: Kazuya Ohuchi, Katsura Miyashita, Atsushi Murakoshi, Hisao Yoshimura,Kyoichi Suguro and Yoshiaki Toyoshima
2243-2246 : Improvement of Ultra-Thin 3.3 nm Thick Oxide for Co-Salicide Process Using NF₃ Annealed Poly-Gate: Tzu Yun Chang, Tan Fu Lei, Tien ShengChao, Cheng Tung Huang, Shi Kuan Chen, Andy Tuan and SteveChou
2247-2250 : Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors: Cheon-Hong Kim, Jae-Hong Jeon, Juhn-Suk Yoo, Kee-Chan Park and Min-Koo Han
2251-2255 : Two-Dimensional Numerical Simulation of Solid-Phase-Crystallized Polysilicon Thin-Film Transistor Characteristics: Tsung-Kuan A. Chou and Jerzy Kanicki
2256-2261 : Analog MOS Circuits for Motion Detection Based on Correlation Neural Networks: Tetsuya Asai, Masahiro Ohtani and Hiroo Yonezu
2262-2265 : Stress-Induced Device Degradation Due to Die-Attachment Process after Area Bump Formation: Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya and Hakaru Kyuragi
2266-2271 : Gate Stack Architecture Analysis and Channel Engineering in Deep Sub-Micron MOSFETs: Anand Inani, Ramgopal Valipe Rao, Baohong Cheng and Jason Woo
2272-2274 : Device Physics of Ferroelectric Thin-Film Memories: J. F. Scott
2275-2280 : A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_0.7Bi_2+yTa₂O₉ Ferroelectric Films Prepared on SiO₂/Si at Low Temperature by Pulsed Laser Deposition: Minoru Noda, Yoshinori Matsumuro, Hideki Sugiyama and Masanori Okuyama
2281-2284 : Preparation of Bi₄Ti₃O₁₂ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure: Takeshi Kijima and Hironori Matsunaga
2285-2288 : Properties of Ferroelectric Memory FET Using Sr₂(Ta, Nb)₂O₇ Thin Film: Yoshikazu Fujimori, Takashi Nakamuraand Akira Kamisawa
2289-2293 : Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi₂Ta₂O₉)/Semiconductor Field Effect Transistor (MFSFET): Sung-Min Yoon, Eisuke Tokumitsu and Hiroshi Ishiwara
2294-2299 : Buried Layer Engineering to Reduce the Drain-Induced Barrier Lowering of Sub-0.05 µm SOI-MOSFET: Risho Koh
2300-2305 : A Novel Shallow Trench Isolation with Mini-Spacer Technology: Wen-Kuan Yeh, Tony Lin, ComingChen, Jih-Wen Chou and Shin-Wei Sun
2306-2309 : Improvement of SiO₂/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing: Kenji Fukuda, Kiyoko Nagai, ToshihiroSekigawa, Sadafumi Yoshida,Kazuo Arai and Masahito Yoshikawa
2310-2313 : Interaction of Porous Pt-SnO₂ Gate Metal-Oxide-Semiconductor Field-Effect Transistor Device with CO: Kouichirou Kasama, Daisuke Sato, Hisashi Fukuda and Shigeru Nomura

Si Process

2314-2318 : Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method: Yorinobu Kunimune, Naoharu Nishio, NoriyukiKodama, Hiroaki Kikuchi, Takeshi Toda, Akira Mineji, Seiichi Shishiguchi and Shuichi Saito
2319-2323 : Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon: Jianxin Xia, Tomoya Saito, Ryangsu Kim, Takenori Aoki, Yoshinari Kamakura and Kenji Taniguchi
2324-2328 : Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation: Meishoku Koh, KazuhikoEgusa, Hiroaki Furumoto, ToruShirakata, Eisuke Seo,KentaroShibahara, Shin Yokoyama and MasatakaHirose
2329-2332 : Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment: Yuji Saito, Katsuyuki Sekine, Masaki Hirayama and Tadahiro Ohmi
2333-2336 : Formation of Very Thin Epitaxial Al₂O₃ Pre-layer with Very Smooth Surface on Si (111) Using a Protective Oxide Layer: Young-Chul Jung, Hiroyuki Miura and Makoto Ishida
2337-2340 : Deuterium Effect on Stress-Induced Leakage Current: Bo Chun Lin, Yih Chung Cheng, Albert Chin, Tahui Wang and Chun Tsai
2341-2344 : Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO₂ Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO₂-Si Diode: Osamu Maida, Norio Okada, Takeshi Kanashima and Masanori Okuyama
2345-2348 : Influences of Impurities on Oxidation Processes of Si(100) Substrates: Hiroya Ikeda, Yasuyuki Nakagawa,Kenji Sato, Shigeaki Zaima and YukioYasuda
2349-2354 : A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements: Toshiyuki Yoshida, Hideki Hasegawa and Takamasa Sakai
2355-2359 : Copper Damascene Interconnection with Tungsten Silicon Nitride Diffusion Barrier Formed by Electron Cyclotron Resonance Plasma Nitridation: Akihiko Hirata, Katsuyuki Machida, NobuyoshiAwaya, Hakaru Kyuragi and Masahiko Maeda
2360-2367 : Multilevel Aluminum Dual-Damascene Interconnects for Process-Step Reduction in 0.18 µm ULSIs: Kazutoshi Shiba, Hitoshi Wakabayashi, ToshiyukiTakewaki, Kuniko Kikuta,Akira Kubo, Shinya Yamasaki and Yoshihiro Hayashi
2368-2372 : A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant: Yasutaka Uchida, Kohshi Taguchi, Satoshi Sugahara and Masakiyo Matsumura
2373-2376 : Transmission Electron Microscopic Studies of TiSi₂ Microstructures and the C49-C54 Phase Transformation in Narrow Lines: Masao Okihara, Kaori Tai, MakikoKageyama, Yusuke Harada,Norio Hirashita and Hiroshi Onoda
2377-2380 : Low-Contact Resistance Poly-Metal Gate Electrode Using TiN/Thin TiSi₂/Poly-Si Structure: Fumio Ohtake and Yasuo Nara
2381-2384 : Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO₂ Chemical Vapor Deposition: Takayuki Aoyama, Kunihiro Suzuki, HirokoTashiro, Yoko Tada,Yuji Kataoka, Hiroshi Arimoto and Kei Horiuchi
2385-2389 : Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si₃N₄ Film on Tungsten for Advanced Low-Resistivity ``Polymetal'' Gate Interconnects: Yasushi Akasaka, Kiyotaka Miyano, KazuakiNakajima, Mamoru Takahashi,Satoko Tanaka and Kyoichi Suguro
2390-2392 : Si Atomic-Layer Epitaxy Using Thermally Cracked Si₂H₆: Yoshiyuki Suda, Yasuhiro Misato and Daiju Shiratori
2393-2396 : Ultra-Low Resistance, Through-Wafer Via (TWV) Technology and Its Applications in Three Dimensional Structures on Silicon: Hyongsok T. Soh, C. Patrick Yue, Anthony McCarthy, Changsup Ryu, Thomas H. Lee, S. Simon Wong and Calvin F. Quate
2397-2400 : A Novel Clean Ti Salicide Process Using Grooved Gate Structure: Kazuya Hizawa, Hideaki Matsuhashi andSatoshi Nishikawa
2401-2405 : Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization: Shin-ichi Nakao, Masashi Numata and Tadahiro Ohmi
2406-2410 : A New Wafer Scale Chip-on-Chip (W-COC) Packaging Technology Using Adhesive Injection Method: Hiroyuki Kurino, Kang Wook Lee, Katsuyuki Sakuma, Tomonori Nakamura and Mitsumasa Koyanagi
2411-2414 : Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress: Masaki Okuno, Takayuki Aoyama, SatoshiNakamura, Hiroshi Arimoto and Kei Horiuchi
2415-2418 : Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate: Ichiro Mizushima, Mitsuo Koike, Tsutomu Sato, Kiyotaka Miyanoand Yoshitaka Tsunashima
2419-2423 : Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation: Kiyotaka Miyano, Ichiro Mizushima, KazuyaOhuchi, Akira Hokazono and Yoshitaka Tsunashima
2424-2426 : Atomic-Layer Doping in Si_1-xGe_x/Si/Si_1-xGe_x Heterostructures by Two-Step Solid-Phase Epitaxy: Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi and Masanobu Miyao
2427-2433 : Influence of Microscopic Chemical Reactions on the Preparation of an Oxide-Free Silicon Surface in a Fluorine-Based Solution: Yoshihiro Sugita and Satoru Watanabe
2434-2437 : Tight-binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface: Aruba Yamada, Akira Endou, Hiromitsu Takaba,Kazuo Teraishi, S. Salai Cheettu Ammal, Momoji Kubo,Kazutaka G. Nakamura, Masahiro Kitajima andAkira Miyamoto

Quantum Nanostructure

2438-2441 : Lateral Composition Modulation Induced Optical Anisotropy in InP/GaInP Quantum Dot System: Hong-Wen Ren, Mitsuru Sugisaki, Shigeo Sugou, Kenichi Nishi, Akiko Gomyo and Yasuaki Masumoto
2442-2444 : A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure: Taehee Cho, Jong-Wook Kim, Jae-EungOh, Jeong-Woo Choe and SongcheolHong
2445-2447 : Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System: Masayoshi Ishibashi, Nami Sugita, Seiji Heike, Hiroshi Kajiyama and Tomihiro Hashizume
2448-2452 : Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition: Taketomo Sato, Chinami Kaneshiro, HiroshiOkada and Hideki Hasegawa
2453-2456 : Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals: Yi Shi, Kenichi Saito, Hiroki Ishikuro and Toshiro Hiramoto
2457-2461 : A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector: Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu,Kenji Kurihara and Katsumi Murase
2462-2465 : Bidirectional Signal Transmission Circuit Using Single Electron Tunneling Junctions: Kouichirou Yamamura and Yoshiyuki Suda
2466-2469 : Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions: Yuri A. Pashkin, Yasunobu Nakamura and Jaw-Shen Tsai
2470-2472 : Transport Properties of a Resistively-Coupled Single-Electron Transistor: Fujio Wakaya, Kazuki Kitamura, Shuichi Iwabuchi and Kenji Gamo
2473-2476 : Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices: Akiko Ohata and Akira Toriumi

SOI Technologies

2477-2482 : Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose Separation by Implanted Oxygen (SIMOX) Substrates Fabricated by Internal Thermal Oxidation (ITOX) Process: Keisuke Kawamura, TakayukiYano, Isao Hamaguchi,Seiji Takayama, Youichi Nagatake and Atsuki Matsumura
2483-2486 : High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage: Makoto Takamiya,Takuya Saraya,Tran Ngoc Duyet,Yuri Yasudaand Toshiro Hiramoto
2487-2491 : Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation: Yuuichi Hirano, Shigenobu Maeda, Warren Fernandez, Toshiaki Iwamatsu,Yasuo Yamaguchi, Shigeto Maegawa and Tadashi Nishimura
2492-2495 : Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers: Kenichi Ishii, Eiichi Suzuki, Seigo Kanemaru, Tatsuro Maeda, Toshiyuki Tsutsumi, Kiyoko Nagai, Toshihiro Sekigawa and HiroshiHiroshima
2496-2500 : Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors: Tran Ngoc Duyet,Hiroki Ishikuro,Yi Shi,Makoto Takamiya,Takuya Sarayaand Toshiro Hiramoto
2501-2505 : A New Merged Bipolar-MOS Transistor in a Silicon on Insulator Structure: Yue-sheng Zheng and Tanemasa Asano
2506-2509 : Detection of Particles on Quarter µm Thick or Thinner SOI Wafers: Susumu Kuwabara, Kiyoshi Mitani, YasuoYatsugake and Yuichiro Kato

Compound Materials

2510-2520 : Nitridation of GaAs (001) Surface Studied by Auger Electron Spectroscopy: Igor Aksenov, Yoshinobu Nakada and Hajime Okumura
2521-2523 : Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate: Joo-Hyong Noh, Hajime Asahi, Mayuko Fudeta, Daisuke Watanabe, Jun Mori and Shun-ichi Gonda
2524-2528 : Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy: Shinji Kuroda, Yoshikazu Terai, Kôki Takita, Tsuyoshi Okuno and Yasuaki Masumoto
2529-2537 : Digital Etching of InP by Intermittent Injection of Phosphorous Precursors in Ultra-high Vacuum: Nobuyuki Otsuka, Jun-ichi Nishizawa, Yutaka Oyama, Hideyuki Kikuchi and Ken Suto
2538-2543 : Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System: Morimichi Mutoh, Naohiro Tsurumi and HidekiHasegawa
2544-2548 : Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics: Takayuki Onozu, Isao Gunji, Ryuji Miura, S. Salai Cheettu Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Yasushi Iyechika and Takayoshi Maeda
2549-2551 : Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells: Ryota Terauchi, Yuzo Ohno, Taro Adachi, Arao Sato, Fumihiro Matsukura, Atsushi Tackeuchi and Hideo Ohno
2552-2554 : Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells: Koji Kawasaki, Masaaki Imazawa, ToshioImanishi, Kenji Kawashima,Kenzo Fujiwara, Makoto Hosoda and Koji Tominaga
2555-2558 : High-Current and High-Transconductance Self-Aligned P⁺-GaAs Junction HFET of Complete Enhancement-Mode Operation: Katsunori Nishii, Mitsuru Nishitsuji,Takahiro Yokoyama, Shinji Yamamoto,Akiyoshi Tamura and Kaoru Inoue
2559-2561 : Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots: Naoto Horiguchi, Toshiro Futatsugi, Yoshiaki Nakata, Naoki Yokoyama,Tanaya Mankad and Pierre M. Petroff
2562-2565 : Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps: Kazuki Yamatani, Masashi Akabori, Junichi Motohisa and Takashi Fukui
2566-2568 : Structural Analysis of SiGe and SiGeC Alloys by Ab Initio Total-Energy Calculations: Akira Yamada, Nagako Miyazono andMakoto Konagai

Optoelectronics

2569-2572 : A Novel Linearization Method of Multiple Quantum Well (MQW) Electroabsorption Analog Modulator: Myunghun Shin and Songcheol Hong
2573-2576 : Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7 µm Measured Using Supercontinuum Generation in Optical Fiber: Naofumi Shimizu, Kunihiko Mori, Tadao Ishibashi and Yoshiaki Yamabayashi
2577-2579 : Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown: Chiaki Domoto, Naoki Ohtani, KazuyoshiKuroyanagi, Pablo O. Vaccaro and NorifumiEgami
2580-2585 : Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET: Yuichi Nitta,Tomonari Yamagata and Kazuhiko Shimomura
2586-2589 : Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors: Yutaka Ohno, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani and Tomoyuki Akeyoshi
2590-2597 : Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes: Helmut Wenisch, Martin Behringer, Michael Fehrer, Matthias Klude, Andreas Isemann, Kazuhiro Ohkawa and Detlef Hommel
2598-2602 : Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary on InP Substrates and Fabrication of Light Emitting Diodes: Wataru Shinozaki, Ichirou Nomura, HiroyukiShimbo, Hiroshi Hattori, Takashi Sano,Song-Bek Che, Akihiko Kikuchi, Kazuhiko Shimomura and Katsumi Kishino
2603-2605 : Periodic Boundary Quantum Chemical Study on ZnO Ultra-Violet Laser Emitting Materials: Yasunori Oumi, Hiromitsu Takaba,S. Salai Cheettu Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Masashi Kawasaki, Mamoru Yoshimoto and Hideomi Koinuma
2606-2608 : Growth of ZnO by Molecular Beam Epitaxy Using NO₂ as Oxygen Source: Keiichiro Sakurai, Daiji Iwata,Shizuo Fujita and Shigeo Fujita
2609-2612 : Enhanced Ultraviolet Emission in Polysilane Light-Emitting Diodes by Inserting a SiO_x Thin Layer: Yonghua Xu, Takahiro Fujino, Seiji Watase, Hiroyoshi Naito, Kunio Oka and Takaaki Dohmaru
2613-2616 : Growth Condition Dependence of the Photoluminescence Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Wells Grown by MOCVD: Janet C. Harris, Helene Brisset, Takao Someya and Yasuhiko Arakawa
2617-2618 : Theoretical Results on Dopability in Large-Band-Gap II-VI Semiconductors: James D. Chadi
2619-2621 : Anomalous Electrochemical Behavior of N-Type GaN Films on \alpha -Al₂O₃ Substrates: Akio Yamamoto, Yasuyuki Tsuji, ToshimitsuSugiura and Akihiro Hashimoto
2622-2625 : Fabrication and Characterization of Planar Diamond Electron Emitters: Hideki Kawamura, Tetsuro Maki and Takeshi Kobayashi
2626-2629 : Electrical Properties of Al/(Ba_XCa_1-X)F₂/i-Diamond Metal-Insulator-Semiconductor Structures: Young Yun, Hiroyuki Tanaka, Akihiro Itoh, Tetsuro Maki and Takeshi Kobayashi
2630-2633 : Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition: Takashi Egawa, Kouichi Nakamura, Hiroyasu Ishikawa, Takashi Jimbo and Masayoshi Umeno
2634-2639 : Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN: Hideki Hasegawa, Yuji Koyama and Tamotsu Hashizume
2640-2645 : Highly Improved Electrical Properties of Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Prepared by Ultrahigh Vacuum Process: Young Yun, Tetsuro Maki, Hiroyuki Tanaka and Takeshi Kobayashi
2646-2651 : Reactive Ion Etching of GaN and Al_xGa_1-xN Using Cl₂/CH₄/Ar Plasma: Durga Basak, Kenji Yamashita,Tomoya Sugahara, Qhalid Fareed,Daisuke Nakagawa, Katsushi Nishino and Shiro Sakai

Novel Devices and Materials

2652-2655 : Stress-Induced Leakage Current and Lateral Nonuniform Charge Generation in Thermal Oxides Subjected to Negative-Gate-Voltage Impulse Stressing: Peng Soon Lim and Wai Kin Chim
2656-2659 : Substrate Resistance Effect on Charge-Pumping Current in Polycrystalline Silicon Thin Film Transistors: Ga-Won Lee, Jin-Woo Lee and Chul-Hi Han
2660-2663 : Signal Propagation Characteristics in Polyimide Optical Wave-guide with Micro-Mirrors for Optical Multichip Module: Yasuhiro Kuwana, Japan., Akinori Hirose,Hiroyuki Kurino and Mitsumasa Koyanagi
2664-2668 : An Optomechanical Pressure Sensor Using Multimode Interference Couplers: Dooyoung Hah, Euisik Yoon and SongcheolHong
2669-2674 : Quantum Simulation of Resonant Tunneling Diodes: a Reliable Approach Based on the Wigner Function Method: Ferran Martín, Joan García-García, Xavier Oriols and Jordi Su\~né
2675-2678 : First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides: Masanori Sugiura, Kazuyuki Uragou, MakotoNoda, Minoru Tachiki and Takeshi Kobayashi

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