Table of Contents

Jpn. J. Appl. Phys. Vol. 40 (2001)
Part 1, No. 11, 15 November 2001

Semiconductors

6177-6181 : Influences of Various Metal Elements on Field Aided Lateral Crystallization of Amorphous Silicon Films: Jae-Bok Lee, Chan-Jae Lee and Duck-Kyun Choi
6182-6186 : Particle Removal and Its Mechanism on Hydrophobic Silicon Wafer in Highly Diluted NH₄OH Solutions with an Added Surfactant: Jin-Goo Park, Sang-Ho Lee and Sang-Yong Kim
6187-6191 : Oxidative Curing of Hydrogen Silsesquioxane Resin Films by Electron Beam Irradiation without Additional Heatings and Characterization of the Cured Films: Takashi Nakamura, Motoshi Sasaki, Akihiko Kobayashi, Kiyotaka Sawa and Katsutoshi Mine
6192-6197 : The Effect of Stress on Solid-Phase Epitaxial Regrowth in As⁺-Implanted Two-Dimensional Amorphized Si: Yu Gyun Shin, Jeong Yong Lee, Moon Han Park and Ho Kyu Kang
6198-6201 : Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere: Takayuki Takahagi, Hiroyuki Sakaue and Shoso Shingubara
6202-6207 : A Chemical Mechanism for Determining the Influence of Boron on Silicon Epitaxial Growth: Shigemitsu Maruno, Taisuke Furukawa, Takumi Nakahata and Yuji Abe
6208-6211 : Temperature Rise of Extreme Ultraviolet Lithography Mask Substrate during Dry Etching Process: Akira Chiba, Eiichi Hoshino, Masashi Takahashi, Hiromasa Yamanashi, Taro Ogawa and Shinji Okazaki
6212-6220 : Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization: Shui Jinn Wang, Hao Yi Tsai, Shi Chung Sun and Ming Hua Shiao
6221-6225 : The Role of an Overlayer in the Formation of Ni-based Transparent Ohmic Contacts to p-GaN: Joon Seop Kwak, J. Cho, S. Chae, O. H. Nam, C. Sone and Y. Park
6226-6230 : Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs: Gong-Ru Lin and Ci-Ling Pan
6231-6234 : Spin Polarization Dependent Far Infrared Absorption in Ga_1-xMn_xAs: Yasuyuki Nagai, Takashi Kunimoto, Keigo Nagasaka, Hiroyuki Nojiri, Mitsuhiro Motokawa, Fumihiro Matsukura, Tomasz Dietl and Hideo Ohno
6235-6238 : Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy: Christopher R. Elsass, Christiane Poblenz, Ben Heying, Paul Fini, Pierre M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck, Adam Saxler, Said Elhamrib and William C. Mitchel
6239-6242 : Correlation between Defect Concentration and Carrier Lifetime of GaAs Grown by Molecular Beam Epitaxy at Different Temperatures: Gong-Ru Lin, Tze-An Liu and Ci-Ling Pan
6243-6247 : Compensation Model for n-type GaN: Gyu-Chul Yi and Won Il Park
6248-6253 : Sb and Bi Passivation Effects on GaAs: Nobuhiro Kuroda and Hideaki Ikoma
6254-6259 : Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky Diodes: Wen-Chau Liu, Hsi-Jen Pan, Huey-Ing Chen, Kun-Wei Lin and Chik-Kai Wang
6260-6262 : Novel Methods of p-type Activation in Mg-doped GaN: Motonobu Takeya and Masao Ikeda
6263-6283 : Transport of Gas-Phase Species Stored in Stagnant Volumes under a GaN Metalorganic Vapor Phase Epitaxy Horizontal Reactor: Kenji Harafuji
6284-6289 : Role of Substrate Temperature on the Properties of Microcrystalline Silicon Thin Films: Sumita Mukhopadhyay, Subhas Chandra Saha and Swati Ray
6290-6295 : Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing: Yong Sun, Kyoichiro Nakatsugi and Tatsuro Miyasato
6296-6303 : Morphology, Structure and Photoluminescence Properties of Zinc Oxide Films Prepared by Excimer Laser Irradiation of Sol-Gel-Derived Precursors: Toshimi Nagase, Toshihiko Ooie, Yoji Makita, Shuji Kasaishi, Masahiro Nakatsuka and Nobuyasu Mizutani
6304-6306 : Crystallization of 3C-SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing: Hae Gwon Lee, Tae Won Kang, Sung Ui Hong, Mun Cheol Paek and Tae Whan Kim
6307-6310 : A Study on Thermal Stability of CoSi₂ Employing Novel Fine-Grained Polycrystalline Silicon/CoSi₂/Si (001) System: Jong-Uk Bae, Dong Kyun Sohn, Ji-Soo Park, Chang Hee Han, Jin Won Park, Yeong-Cheol Kim and Jae Jeong Kim
6311-6315 : Titanium Nitride Membrane Application to Extended Gate Field Effect Transistor pH Sensor Using VLSI Technology: Yuan-Lung Chin, Jung-Chuan Chou, Zhen-Ce Lei, Tai-Ping Sun, Wen-Yaw Chung and Shen-Kan Hsiung
6316-6322 : Accurate Measurement of Spherical and Astigmatic Aberrations by a Phase Shift Grating Reticle: Hiroshi Nomura
6323-6324 : Precipitation in As-Ion-Implanted and Annealed InAs(Short Note): Seon-Ju Kim and Haewook Han
6325-6326 : Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness(Short Note): Zhonghe Jin
6327-6328 : Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films(Short Note): Tatsuo Shimizu, Masaki Shimada and Minoru Kumeda

Superconductors

6329-6334 : Improvement in Field Trapping Capability of (Nd,Eu,Gd) Ba₂Cu₃O_y with Ag₂O Addition: Miryala Muralidhar, Milos Jirsa, Naomichi Sakai and Masato Murakami
6335-6338 : Crack-free and c-Axis In-plane Aligned Superconducting Y_0.7Ca_0.3Ba₂Cu₃O_7-δ Films for Terahertz Radiating Josephson Plasma Devices: A. K. Sarin Kumar, Masashi Kawasaki and Hideomi Koinuma
6339-6343 : Evaporation of Silver during Chemical Vapor Deposition Process for YBa₂Cu₃O₇ and its Effect on Microstructure: Yanwei Ma, Kazuo Watanabe, Satoshi Awaji and Mitsuhiro Motokawa
6344-6345 : Superconductivity and Structure of Bi₂Sr₂Ca_1-xPr_xCu₂O_y System(Short Note): Hadi Salamati

Magnetism

6346-6350 : Ferromagnetic Clusters on Disordered Si-Doped Ni₃Mn Alloys: Kowan Young Ko, Hassan J. Al-Kanani, J. Graham Booth and Ken Andersen
6351-6356 : Exchange Coupling Effect in Magnetic Trilayer Systems with Perpendicular Anisotropic Interlayer: Jing-guo Hu, Guo-jun Jin and Yu-qiang Ma
6357-6359 : Effects of Stray Fields in Flat-End and Pointed-End NiFe/Cu/NiFe/NiO Wires: Takashi Kimura, Fujio Wakaya and Kenji Gamo
6360-6364 : The Effect of the Interface Impurity in Fabrication of Spin Dependent Tunnel Junction: Heung-Soon Lym, Dong-Min Jeon, Hyung-Ki Baek, Seong-Yong Yoon, Du-Hyun Lee, Dae-Ho Yoon and Su-Jeong Suh
6365-6369 : Enhancement of the Faraday Rotation: Tadao Katsuragawa
6370-6374 : Ni_1-xCo_x-C Nanogranular Thin Films Prepared by a Co-Sputtering Method: Improvement in Magnetic Properties by Optimizing the Alloy Ratio: Satoshi Tomita, Hiroaki Adachi, Minoru Fujii and Shinji Hayashi
6375-6378 : Spin Temperature Model for Distant Electron Nuclear Double Resonance Effect: Takamitsu Yamamoto
6379-6383 : Recording Characteristics of Flux-detectable Magneto-optical Recording Media: Hiroaki Nemoto and Hideki Saga

Optics and Quantum Electronics

6384-6390 : Growth and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP Strained Quantum-Well Pump Lasers: Hung-Pin Shiao, Hsin-Ying Lee, Yow-Jon Lin, Yuan-Kuang Tu and Ching-Ting Lee
6391-6395 : Simple Formulas for Calculating Wave Propagation and Splitting in Anisotropic Media: Chong-Min Chang and Han-Ping D. Shieh
6396-6400 : Temporal Stability of Second-Order Optical Nonlinearity of Polyurethane: Influence of Poling Conditions: Masaaki Tsuchimori, Osamu Watanabe and Akane Okada
6401-6405 : Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure: Toshikazu Onishi, Osamu Imafuji, Toshiya Fukuhisa, Atsunori Mochida, Yasuhiro Kobayashi, Masaaki Yuri, Kunio Itoh and Hirokazu Shimizu
6406-6410 : InGaAs/InGaAsP Quantum Well Laser at 2.04 µm for Diode Spectroscopy of Carbon Dioxide Isotope: Akinori Ubukata, Jie Dong, Katsumasa Suzuki and Koh Matsumoto
6411-6414 : Numerical Modeling and Experimental Confirmation of an Efficient Phosphosilicate-Fiber Raman Laser: Feroz Ahmed, Mahendra Prabhu, Atsushi Taniguchi, Nam Seong Kim, Ken-ichi Ueda and Naoto Kishi
6415-6425 : Design and Performance of a Diode-Pumped Nd:Silica-Phosphate Glass Zig-Zag Slab Laser Amplifier for Inertial Fusion Energy: Toshiyuki Kawashima, Tadashi Kanabe, Hiroki Matsui, Takeyoshi Eguchi, Masanobu Yamanaka, Yoshinori Kato, Masahiro Nakatsuka, Yasukazu Izawa, Sadao Nakai, Takeshi Kanzaki and Hirofumi Kan
6426-6429 : Higher-Order Soliton Compression of Optical Pulses from 5 ps to 20 fs by a 15.1-m-long Single-Stage Step-like Dispersion Profiled Fiber: Koji Igarashi, Masato Kishi and Masahiro Tsuchiya
6430-6434 : Direct Observation of Femtosecond Pulse Buildup in a Self-Mode-Locked Laser Using an Intracavity Acoustooptic Modulator: Shuichi Kinoshita, Eiichi Ito, Minoru Omori and Shuji Ueki
6435-6440 : A Model of Image Display in the Optimized Overdrive Method for Motion Picture Quality Improvements in Liquid Crystal Devices: Hajime Nakamura
6441-6445 : Polymer-Dispersed Liquid-Crystal Holographic Gratings Doped with a High-Dielectic-Anisotropy Dopant: Shing-Trong Wu, Ting-Shan Mo, Andy Ying-Guey Fuh, Shin-Tson Wu and Liang-Chy Chien
6446-6452 : Evaluation of Silicide Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique: Tohru Koyama, Masataka Umeno, Junko Komori and Yoji Mashiko
6453-6454 : Laser Performance of Neodymium-Doped Lanthanum Tungstate Crystals(Short Note): Yoshiharu Urata, Tsuguo Fukuda, Hiromasa Ito and Satoshi Wada
6455-6456 : A Simulation Code for Tempo-Spatial Analysis of Three-Wave Interaction with Ultrashort- and Ultrahigh-Intensity Laser Pulses(Short Note): Tiejun Zhang, Motoki Yonemura, Makoto Aoyama and Koichi Yamakawa

Optical Properties of Condensed Matter

6457-6463 : Origin of Broad Visible Emission from Branched Polysilane and Polygermane Chains: Akira Watanabe, Takaaki Sato and Minoru Matsuda
6464-6467 : Temperature Dependence of Time-resolved Photoluminescence in Mercuric Iodide: Xiao-Ming Wen and Nobuhito Ohno
6468-6472 : High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source: Tetsuya Matsuyama, Masayasu Mukai, Hiromichi Horinaka, Kenji Wada, Tsutomu Nakanishi, Shoji Okumi, Kazuaki Togawa, Tomohiro Nishitani and Toshio Baba
6473-6476 : Novel Method for Simulating Optical Properties of Reflective Cholesteric Liquid Crystal Displays: Qing Li, Xiaole Bai, Jian Zhang and Linsu Tong

Electrical Properties of Condensed Matter

6477-6480 : Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells: Tosaporn Chavanapranee, Shin'go Fujimoto and Yoshiji Horikoshi
6481-6486 : Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi₂VO_5.5 Thin Films: Tomohiro Sakai, Takayuki Watanabe, Yasuo Cho, Kaori Matsuura and Hiroshi Funakubo
6487-6495 : Investigation of Elastic Nonlinearities in Pb(Zn_1/3Nb_2/3)O₃-PbTiO₃ and Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ Single Crystals: Shashank Priya, Dwight Viehland, Jungho Ryu, Kenji Uchino, Yohachi Yamashita and Haosu Luo
6496-6500 : Effect of Ni Doping on Improvement of the Tunability and Dielectric Loss of Ba_0.5Sr_0.5TiO₃ Thin Films for Microwave Tunable Devices: Young-Ah Jeon, Tae-Suck Seo and Soon-Gil Yoon
6501-6505 : Effects of A-Site (NaCe) Substitution with Na-Deficiency on Structures and Properties of CaBi₄Ti₄O₁₅-Based High-Curie-Temperature Ceramics: Haixue Yan, Chengen Li, Jiaguang Zhou, Weimin Zhu, Lianxin He, Yuxin Song and Youhua Yu
6506-6509 : Polarization Switching in Pb(Zn_1/3Nb_2/3)O₃-5%PbTiO₃ Crystals: Jung-Kun Lee, Jae Yun Yi, Kug Sun Hong and Seung-Eek Park
6510-6513 : Dielectric Morphology of Twin Domains in LaAlO₃ Observed by a Scanning Microwave Microscope: Sangjin Hyun, Ahram Kim, Joonhyung Kwon and Kookrin Char

Structure and Mechanical and Thermal Properties of Condensed Matter

6514-6521 : Molecular Orientation Analysis of a Design Concept for Optical Properties of Liquid Crystal Microlenses: Satoshi Yanase, Kazuhiro Ouchi and Susumu Sato
6522-6525 : Liquid-Crystal Optical Rotator Using Weak Azimuthal Anchoring Surface: Rumiko Yamaguchi, Takuro Yamanaka and Susumu Sato
6526-6530 : Characteristics of Time Response of Self-Phase Modulation in Liquid Crystals: Hiroshi Ono and Junichi Kikuhara
6531-6535 : Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs: Ines Pietzonka, Torsten Sass, Werner Seifert, Struan Gray and Charlotte Mogensen
6536-6542 : X-Ray Double-Crystal Diffractometry of Verneuil-Grown SrTiO₃ Crystals: Jun-ichi Yoshimura, Takeshi Sakamoto and Junji Yamanaka

Surfaces, Interfaces, and Films

6543-6546 : Properties of TiO₂ Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition: Ming-Kwei Lee, Yi-Min Hung and Jung-Jie Huang
6547-6551 : Increase of Dielectric Constant of an Epitaxial (100) Yttria-Stabilized Zirconia Film on (100) Si Substrate Deposited by Reactive Sputtering in the Metallic Mode: Susumu Horita and Takuji Kuniya
6552-6555 : Prevention against Oxidation of Mn Evaporant during Reactive Evaporation Process: Masaaki Isai and Hiroshi Fujiyasu
6556-6560 : Morphology of Silicon Oxide Film on Silicon Wafer Surface during Its Removal Process in a Hydrogen Ambient: Masanori Mayusumi, Masato Imai, Shinji Nakahara, Kazutoshi Inoue and Hitoshi Habuka
6561-6565 : Preparation and Magnetooptical Properties of AlN-Fe Granular Film: Yumiko Haga, Noriyuki Nakaya, Eishi Takeda, Yoshio Nakamura and Osamu Nittono
6566-6573 : Preparation and Characterization of Pb(Zr,Ti)O₃ Films Deposited on Pt/RuO₂ Hybrid Electrode for Ferroelectric Random Access Memory Devices: Hee-Chul Lee and Won-Jong Lee
6574-6580 : Substrate Bias Effect on Amorphous Hydrogenated Carbon Films Deposited by Filtered Cathodic Arc Deposition: Yan-Way Li, Chia-Fu Chen, Yew-Bin Shue, Teng-Chien Yu and Jack Jyh-Kau Chang
6581-6588 : Computer Simulation Study on Incident Fluence Dependence of Ion Reflection and Sputtering Processes from Layered and Mixed Materials: Retsuo Kawakami and Kaoru Ohya
6589-6593 : Electrochemical Nanolithography on Amorphous WO₃ Thin Films Using Scanning Tunneling Microscope in Air: Hong Qiu, Yong-Feng Lu and Zhi-Hong Mai
6594-6599 : Reduction in Feedback Bandwidth of the Force-Controlled Atomic Force Microscope Using a Polyimide Cantilever: Nobuhiro Kato, Toshiro Matsumoto, Hisao Kikuta, Yasuhiro Nakamura and Koichi Iwata

Nuclear Science, Plasmas, and Electric Discharges

6600-6606 : Prebreakdown Phenomena and Formation Processes of Low-Pressure Glow Discharges in Ar, Ar/N₂ and Ar/O₂ Mixtures: Tatsuzo Hosokawa, Kazuhiro Goto, Mikio Ohuchi, Kensuke Ichinose, Yasuyuki Funato and Teruo Kaneda
6607-6612 : Investigation of the Conditions Required for the Formation of a Magnetic Neutral Loop Discharge Plasma: Tatsuya Sakoda, Yaw Okraku-Yirenkyi, Youl-Moon Sung, Masahisa Otsubo and Chikahisa Honda
6613-6618 : Investigation of Etch Rate Uniformity of 60 MHz Plasma Etching Equipment: Akira Koshiishi, Youichi Araki, Shinji Himori and Tamotsu Iijima

Atoms, Molecules, and Chemical Physics

6619-6622 : Formation Mechanism of Strontium and Titanium Oxide Films by Metalorganic Chemical Vapor Deposition: An Isotopic Labeling Study Using ¹⁸O₂: Toshihiro Nakamura, Shun Momose and Kunihide Tachibana
6623-6629 : Photocuring Kinetics for Polyfurfurylmethacrylate Doped with Fullerene: The Influence of Oxygen Partial Pressure on Sensitivity: Hisayoshi Arai, Yusuke Tajima and Kazuo Takeuchi
6630-6633 : Low Operating Voltage and High Efficiency Organic Multilayer Electroluminescent Devices with p-Type Doped Hole Injection Layer: Jingsong Huang, Martin Pfeiffer, Jan Blochwitz, Ansgar Werner, Josef Salbeck, Shiyong Liu and Karl Leo

Instrumentation, Measurement, and Fabrication Technology

6634-6640 : Development of a Zero Spillover Controller for Broadband Cancellation of Noise in Ducts: Jian-Da Wu and Mingsian R. Bai
6641-6644 : Development of Miniature Diamond Anvil Cell for the Superconducting Quantum Interference Device Magnetometer: Masaki Mito, Masako Hitaka, Tatsuya Kawae, Kazuyoshi Takeda, Tetsuo Kitai and Noriaki Toyoshima
6645-6653 : Accuracy of a Harmonically Operated Single Electron Pump: Akio Iwasa, Akio Fukushima and Akira Sato
6654-6657 : A New Design of Optical Configuration of Transflective Liquid Crystal Displays using Antiferroelectric Liquid Crystals and Frustelectric Ferroelectric Liquid Crystals: Won Sang Park, Sung-Chul Kim, Seo Hern Lee, Yong Suk Hwang, Gi-dong Lee, Tae-Hoon Yoon and Jae Chang Kim
6658-6662 : A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep Ultraviolet Lithography: II. Limited Permeation of Si Compounds from Liquid Phase: Kazuyuki Sugita, Masahiro Yamashita, Chan Ming Liew, Kieko Harada, Masahito Kushida and Kyoichi Saito
6663-6667 : Using NH₃ Plasma Pretreatment to Improve the Characteristics of Organic Spin-on Low-k materials for Copper Metallization: Kow-Ming Chang, Ming-Hau Tseng, I.-Chung Deng, Yao-Pin Tsai and Sy-Jer Yeh

General Physics

6668-6674 : Experimental Study of Rayleigh-Taylor Instability in a Shock Tube Accompanying Cavity Formation: Xiao-Liang Wang, Motoyuki Itoh, Hong-Hui Shi and Masami Kishimoto
6675-6676 : A Novel Resonance in n-GaAs Diodes(Short Note): Yuo-Hsien Shiau and Zoltán Néda

Cross-Disciplinary Areas

6677-6678 : Epitaxial Nucleation of Protein Crystal on Poly-L-Lysine Modified Surface(Short Note): Long Rong, Hiroshi Komatsu, Makoto Natsuisaka and Shinichi Yoda

Errata

6679-6680 : Fabrication of Defect-Free Ferroelectric Liqid Crystal Displays Using Photoalignment and Their Electrooptic Performance: Ryuji Kurihara, Hirokazu Furue, Taiju Takahashi, Tomo-o Yamashita, Jun Xu and Shunsuke Kobayashi
6681-6682 : Phenomenological Analysis in Fabricating Defect-Free Ferroelectric Liquid Crystal Displays with C-l or C-2 Uniform States: Jun Xu, Ryuji Kurihara and Shunsuke Kobayashi

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