Table of Contents: Vol. 43, No. 11B (2004)

Special Issue: Dielectric Thin Films for Future ULSI Devices

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• High-k gate dielectrics
• Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics
• Ferroelectric and high-k films for memory applications
• Growth and processing of gate dielectrics
• Characterization and control of gate dielectric/Si interface
• Theoretical approaches for gate dielectric/Si structure

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High-k gate dielectrics

7807-7814 : Dynamic Bias-Temperature Instability in Ultrathin SiO₂ and HfO₂ Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime

Ming Fu Li, Gang Chen, Chen Shen, Xin Peng Wang, Hong Yu Yu, Yee-Chia Yeo and Dim Lee Kwong
Published November 15, 2004
[Abstract] [Full Text PDF (211K)] [Buy This Article]

7815-7820 : Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi_xO_y Gate Dielectrics

Prakaipetch Punchaipetch, Takeshi Okamoto, Hideki Nakamura, Yukiharu Uraoka, Takashi Fuyuki and Sadayoshi Horii
Published November 15, 2004
[Abstract] [Full Text PDF (302K)] [Buy This Article]

7821-7825 : HfO₂ Film Formation Combined with Radical Nitridation and Its Electrical Characteristic

Ryoya Takahashi, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima and Yukio Yasuda
Published November 15, 2004
[Abstract] [Full Text PDF (680K)] [Buy This Article]

7826-7830 : Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics

Masakazu Goto, Keiichi Higuchi, Kazuyoshi Torii, Ryu Hasunuma and Kikuo Yamabe
Published November 15, 2004
[Abstract] [Full Text PDF (258K)] [Buy This Article]

7831-7836 : Impact of Rapid Thermal O₂ Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)

Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichirou Higashi, Takayuki Kawahara, Kazuyoshi Torii and Seiichi Miyazaki
Published November 15, 2004
[Abstract] [Full Text PDF (406K)] [Buy This Article]

7837-7842 : Effect of Si/SiO₂ Interface on Silicon and Boron Diffusion in Thermally Grown SiO₂

Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi and Kenji Shiraishi
Published November 15, 2004
[Abstract] [Full Text PDF (180K)] [Buy This Article]

7843-7847 : Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

Makoto Miyamura, Koji Masuzaki, Heiji Watanabe, Nobuyuki Ikarashi and Toru Tatsumi
Published November 15, 2004
[Abstract] [Full Text PDF (152K)] [Buy This Article]

7848-7852 : Characterization of Hf_0.3Al_0.7O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams

Akira Uedono, Masakazu Goto, Keiichi Higuchi, Kenji Shiraishi, Kikuo Yamabe, Hiroshi Kitajima, Riichiro Mitsuhashi, Atsushi Horiuchi, Kazuyoshi Torii, Tsunetoshi Arikado, Ryoichi Suzuki, Toshiyuki Ohdaira and Keisaku Yamada
Published November 15, 2004
[Abstract] [Full Text PDF (129K)] [Buy This Article]

Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics

7853-7856 : Formation of Silicon Oxynitride Films with Low Leakage Current Using N₂/O₂ Plasma near Atmospheric Pressure

Ryoma Hayakawa, Takeshi Yoshimura, Atushi Ashida, Hiroya Kitahata, Motokazu Yuasa and Norifumi Fujimura
Published November 15, 2004
[Abstract] [Full Text PDF (108K)] [Buy This Article]

7857-7860 : Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure

Satoru Morita, Akihito Shinozaki, Yuuki Morita, Kazuo Nishimura, Tatsuya Okazaki, Shinichi Urabe and Mizuho Morita
Published November 15, 2004
[Abstract] [Full Text PDF (186K)] [Buy This Article]

7861-7865 : Nonuniformity in Ultrathin SiO₂ on Si(111) Characterized by Conductive Atomic Force Microscopy

Ryu Hasunuma, Junichi Okamoto, Norio Tokuda and Kikuo Yamabe
Published November 15, 2004
[Abstract] [Full Text PDF (181K)] [Buy This Article]

7866-7870 : Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability

Takuji Hosoi, Shuichi Morikawa, Yoshinari Kamakura and Kenji Taniguchi
Published November 15, 2004
[Abstract] [Full Text PDF (589K)] [Buy This Article]

Ferroelectric and high-k films for memory applications

7871-7875 : Effect of Silicon Addition on Electrical Properties of SrBi₂Ta₂O₉ Thin Films

Susumu Tamura, Yasuhisa Omura and Sumio Nakahara
Published November 15, 2004
[Abstract] [Full Text PDF (160K)] [Buy This Article]

7876-7878 : Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching

Shigeki Sakai, Rajangam Ilangovan and Mitsue Takahashi
Published November 15, 2004
[Abstract] [Full Text PDF (179K)] [Buy This Article]

7879-7880 : Solid-Phase Epitaxial Growth of SrTiO₃ Thin Films on Si(001) Substrates at Low Temperature (Short Note)

Md. Nurul Kabir Bhuiyan, Hiroaki Kimura, Toyokazu Tambo and Chiei Tatsuyama
Published November 15, 2004
[Abstract] [Full Text PDF (94K)] [Buy This Article]

Growth and processing of gate dielectrics

7881-7883 : Structure of Ultrathin Epitaxial CeO₂ Films Grown on Si(111)

Shinji Joumori, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Yukie Nishikawa, Daisuke Matsushita, Takeshi Yamaguchi and Nobutaka Satou
Published November 15, 2004
[Abstract] [Full Text PDF (125K)] [Buy This Article]

7884-7889 : Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH₃/Ar Plasma

Takaaki Kawahara, Kazuyoshi Torii, Hiroshi Ohji, Riichirou Mitsuhashi, Akiyoshi Muto, Woosik Kim, Hiroyuki Ito and Hiroshi Kitajima
Published November 15, 2004
[Abstract] [Full Text PDF (256K)] [Buy This Article]

Characterization and control of gate dielectric/Si interface

7890-7894 : Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH₃-Nitrided Si(100)

Hiroshi Nakagawa, Akio Ohta, Fumito Takeno, Satoru Nagamachi, Hideki Murakami, Seiichiro Higashi and Seiichi Miyazaki
Published November 15, 2004
[Abstract] [Full Text PDF (239K)] [Buy This Article]

7895-7898 : Electronic Structure at Realistic Si(100)-SiO₂ Interfaces

Feliciano Giustino, Angelo Bongiorno and Alfredo Pasquarello
Published November 15, 2004
[Abstract] [Full Text PDF (168K)] [Buy This Article]

7899-7902 : Interfacial Layer-Induced Mobility Degradation in High-k Transistors

G. Bersuker, J. Barnett, N. Moumen, B. Foran, C. D. Young, P. Lysaght, J. Peterson, B. H. Lee, P. M. Zeitzoff and H. R. Huff
Published November 15, 2004
[Abstract] [Full Text PDF (512K)] [Buy This Article]

Theoretical approaches for gate dielectric/Si structure

7903-7908 : First-Principles Analyses of O₂ Molecules around Ultrathin SiO₂/Si(100) Interface

Toru Akiyama, Hiroyuki Kageshima and Tomonori Ito
Published November 15, 2004
[Abstract] [Full Text PDF (1801K)] [Buy This Article]

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