JJAP ONLINE : Table of Contents

Table of Contents: Vol. 46, No. 4B (2007)

Special Issue: Solid State Devices & Materials

Advanced Gate Stack/Si Processing Science
Characterization and Materials Engineering for Device Integration
CMOS Devices/Device Physics
Advanced Memory Technology
Advanced Circuits and Systems
Compound Semiconductor Circuits, Electron Devices and Device Physics
Photonic Devices and Device Physics
Advanced Material Synthesis and Crystal Growth Technology
Physics and Applications of Novel Functional Materials and Devices
Organic Materials Science, Device Physics, and Applications
Micro/Nano Electromechanical and Bio-Systems

Advanced Gate Stack/Si Processing Science

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1825-1829 : Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes: Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Meishoku Masahara, Kenichi Ishii, Hiromi Yamauchi, Junichi Tsukada, and Eiichi Suzuki
Published April 24, 2007
[Abstract] [Full Text PDF (245K)] [Buy This Article]
1830-1840 : Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si: Masakatsu Tsuchiaki and Akira Nishiyama
Published April 24, 2007
[Abstract] [Full Text PDF (782K)] [Buy This Article]
1841-1847 : Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions: Akio Shima, Toshiyuki Mine, and Kazuyoshi Torii
Published April 24, 2007
[Abstract] [Full Text PDF (615K)] [Buy This Article]
1848-1852 : Low Leakage Current and Low Resistivity p⁺n Diodes on Si(110) Fabricated by Ga⁺ and B⁺ Dual Ion Implantation for Low Temperature Source–Drain Activation: Hiroshi Imai, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 24, 2007
[Abstract] [Full Text PDF (206K)] [Buy This Article]
1853-1858 : Theoretical Simulation of Dielectric Breakdown by Molecular Dynamics and Tight-Binding Quantum Chemistry Methods: Zhigang Zhu, Arunabhiram Chutia, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Parasuraman Selvam, and Akira Miyamoto
Published April 24, 2007
[Abstract] [Full Text PDF (310K)] [Buy This Article]
1859-1864 : Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors: Shinsuke Sakashita, Takaaki Kawahara, Masaharu Mizutani, Masao Inoue, Kenichi Mori, Shinichi Yamanari, Masahiko Higashi, Yukio Nishida, Kazuhito Honda, Naofumi Murata, Junichi Tsuchimoto, Jiro Yugami, Hidefumi Yoshimura, and Masahiro Yoneda
Published April 24, 2007
[Abstract] [Full Text PDF (559K)] [Buy This Article]
1865-1869 : Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes: Daisuke Ikeno, Yukihiro Kaneko, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, and Shigeaki Zaima
Published April 24, 2007
[Abstract] [Full Text PDF (348K)] [Buy This Article]
1870-1873 : Investigation of Inversion Capacitance–Voltage Reconstruction for Metal Oxide Semiconductor Field Effect Transistors with Leaky Dielectrics using BSIM4/SPICE and Intrinsic Input Resistance Model: Wei Lee, Pin Su, Ke-Wei Su, Chung-Shi Chiang, and Sally Liu
Published April 24, 2007
[Abstract] [Full Text PDF (126K)] [Buy This Article]
1874-1878 : Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO₂ Stack Dielectrics: Shiyang Zhu, Anri Nakajima, Takuo Ohashi, and Hideharu Miyake
Published April 24, 2007
[Abstract] [Full Text PDF (139K)] [Buy This Article]
1879-1884 : Behavior of Local Charge-Trapping Sites in La₂O₃–Al₂O₃ Composite Films under Constant Voltage Stress: Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, and Shigeaki Zaima
Published April 24, 2007
[Abstract] [Full Text PDF (294K)] [Buy This Article]
1885-1887 : Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications: Kazuaki Nakajima, Masato Koyama, Tomonori Aoyama, Akira Nishiyama, Kazuhiro Eguchi, and Kyoichi Suguro
Published April 24, 2007
[Abstract] [Full Text PDF (142K)] [Buy This Article]
1888-1890 : Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O 1s Photoemission Spectroscopy Using Synchrotron Radiation: Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Yuzuru Narita, and Yoshiharu Enta
Published April 24, 2007
[Abstract] [Full Text PDF (230K)] [Buy This Article]
1891-1894 : Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON: Naoto Umezawa, Kenji Shiraishi, Seiichi Miyazaki, Akira Uedono, Yasushi Akasaka, Seiji Inumiya, Ryu Hasunuma, Kikuo Yamabe, Hiroyoshi Momida, Takahisa Ohno, Kenji Ohmori, Toyohiro Chikyow, Yasuo Nara, and Keisaku Yamada
Published April 24, 2007
[Abstract] [Full Text PDF (157K)] [Buy This Article]
1895-1898 : Electric Characteristics of Si₃N₄ Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces: Masaaki Higuchi, Takashi Aratani, Tatsufumi Hamada, Seiji Shinagawa, Hiroshi Nohira, Eiji Ikenaga, Akinobu Teramoto, Takeo Hattori, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 24, 2007
[Abstract] [Full Text PDF (342K)] [Buy This Article]
1899-1909 : Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides: Gerald Lucovsky, Hyungtak Seo, Sanghyun Lee, Leslie B. Fleming, Marc D. Ulrich, Jan Lüning, Pat Lysaght, and Gennadi Bersuker
Published April 24, 2007
[Abstract] [Full Text PDF (2334K)] [Buy This Article]
1910-1915 : Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-k Gate Stacks: Heiji Watanabe, Shinya Horie, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takayoshi Shimura, and Kiyoshi Yasutake
Published April 24, 2007
[Abstract] [Full Text PDF (296K)] [Buy This Article]
1916-1920 : Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor: Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, and Kiyoshi Yasutake
Published April 24, 2007
[Abstract] [Full Text PDF (333K)] [Buy This Article]
1921-1928 : Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors: Takeo Matsuki, Seiji Inumiya, Nobuyuki Mise, Takahisa Eimori, and Yasuo Nara
Published April 24, 2007
[Abstract] [Full Text PDF (664K)] [Buy This Article]
1929-1933 : Formation Kinetics and Work Function Tuning of Pd₂Si Fully Silicided Metal Gate: Takuji Hosoi, Kosuke Sano, Kosei Hosawa, and Kentaro Shibahara
Published April 24, 2007
[Abstract] [Full Text PDF (367K)] [Buy This Article]
1934-1937 : Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory: Ju-Young Jung, Heung-Jin Joo, Jung-Hoon Park, Seung-Kuk Kang, Hwi-San Kim, Do-Yeon Choi, Jai-Hyun Kim, Eun-Sun Lee, Young-Ki Hong, Hyun-Ho Kim, Dong-Jin Jung, Young-Min Kang, Sung-Yung Lee, Hong-Sik Jeong, and Kinam Kim
Published April 24, 2007
[Abstract] [Full Text PDF (507K)] [Buy This Article]

Characterization and Materials Engineering for Device Integration

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1938-1941 : Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams: Akira Uedono, Takashi Suzuki, Tomoji Nakamura, Toshiyuki Ohdaira, and Ryoichi Suzuki
Published April 24, 2007
[Abstract] [Full Text PDF (135K)] [Buy This Article]
1942-1946 : Self-Formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Films: Kazuhiro Ito, Susumu Tsukimoto, and Masanori Murakami
Published April 24, 2007
[Abstract] [Full Text PDF (366K)] [Buy This Article]
1947-1950 : Selectively Formed Metal Organic Chemical Vapor Deposition TiSiN and Ta Barrier Metal Using Direct Contact Via Process for Sub-65 nm Interconnects: Sung Joong Joo, Han Choon Lee, In Cheol Baek, Cheonman Shim, Ji Ho Hong, Jae Won Han, Kee Ho Kim, and Youngmin Kim
Published April 24, 2007
[Abstract] [Full Text PDF (489K)] [Buy This Article]
1951-1954 : Plasma-Enhanced-Polymerization Thin-Film as a Drift Barrier for Cu Ions: Takenobu Yoshino, Nobuhiro Hata, Jun Kawahara, Yoshinori Shishida, and Takamaro Kikkawa
Published April 24, 2007
[Abstract] [Full Text PDF (96K)] [Buy This Article]
1955-1960 : Analyses of Interface Adhesion between Cu and SiCN Etch Stop Layers by Nanoindentation and Nanoscratch Tests: Shou-Yi Chang and Yu-Shuien Lee
Published April 24, 2007
[Abstract] [Full Text PDF (273K)] [Buy This Article]
1961-1967 : Low-Temperature Process of Fine-Pitch Au–Sn Bump Bonding in Ambient Air: Ying-Hui Wang, Kenji Nishida, Matthias Hutter, Takashi Kimura, and Tadatomo Suga
Published April 24, 2007
[Abstract] [Full Text PDF (414K)] [Buy This Article]
1968-1973 : Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors: Naoya Inoue, Ippei Kume, Jun Kawahara, Shinobu Saito, Naoya Furutake, Takeshi Toda, Koichiro Matsui, Takayuki Iwaki, Masayuki Furumiya, Toshiki Shinmura, Koichi Ohto, and Yoshihiro Hayashi
Published April 24, 2007
[Abstract] [Full Text PDF (270K)] [Buy This Article]
1974-1980 : Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-k Structure: Masako Kodera, Yoshihiro Mochizuki, Akira Fukuda, Hirokuni Hiyama, and Manabu Tsujimura
Published April 24, 2007
[Abstract] [Full Text PDF (339K)] [Buy This Article]
1981-1983 : Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition: Chung-Mo Yang, Sang-Won Yun, Jong-Bong Ha, Kyung-Il Na, Hyun-Ick Cho, Heon-Bok Lee, Jong-Hwa Jeong, Sung-Ho Kong, Sung-Ho Hahm, and Jung-Hee Lee
Published April 24, 2007
[Abstract] [Full Text PDF (314K)] [Buy This Article]
1984-1988 : Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices: Yoshihiro Miyagawa, Tatsunori Murata, Yukio Nishida, Takehiro Nakai, Akira Uedono, Nobuyoshi Hattori, Masazumi Matsuura, Koyu Asai, and Masahiro Yoneda
Published April 24, 2007
[Abstract] [Full Text PDF (171K)] [Buy This Article]
1989-1993 : Measurement of Alignment Accuracy for Wafer Bonding by Moiré Method: Chenxi Wang and Tadatomo Suga
Published April 24, 2007
[Abstract] [Full Text PDF (247K)] [Buy This Article]
1994-1996 : Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope: Noritaka Ajari, Junichi Uchikoshi, Takaaki Hirokane, Kenta Arima, and Mizuho Morita
Published April 24, 2007
[Abstract] [Full Text PDF (146K)] [Buy This Article]
1997-2000 : Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition: Keisuke Yamaoka, Naomichi Okada, Yuji Yoshizako, Yoshikazu Terai, and Yasufumi Fujiwara
Published April 24, 2007
[Abstract] [Full Text PDF (258K)] [Buy This Article]
2001-2005 : Ring Contact Electrode Process for High Density Phase Change Random Access Memory: Kyung-Chang Ryoo, Yoon Jong Song, Jae-Min Shin, Sang-Su Park, Dong-Won Lim, Jae-Hyun Kim, Woon-Ik Park, Ku-Ri Sim, Ji-Hyun Jeong, Dae-Hwan Kang, Jun-Hyuck Kong, Chang-Wook Jeong, Jae-Hee Oh, Jae-Hyun Park, Jeong-In Kim, Yong-Tae Oh, Ji-Sun Kim, Seong-Ho Eun, Kwang-Woo Lee, Seong-Pil Koh, Yung Fai, Gwan-Hyob Koh, Gi-Tae Jeong, Hong-Sik Jeong, and Kinam Kim
Published April 24, 2007
[Abstract] [Full Text PDF (403K)] [Buy This Article]
2006-2010 : Ag Diffusion in Low-k Materials (BCN and SiOC) and Its Challenges for Future Interconnection: Motaharul Kabir Mazumder, Ryota Moriyama, Daisuke Watanabe, Chiharu Kimura, Hidemitsu Aoki, and Takashi Sugino
Published April 24, 2007
[Abstract] [Full Text PDF (165K)] [Buy This Article]
2011-2014 : Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Jone F. Chen, Dao-Hong Yang, Chih-Yung Lin, and Shien-Yang Wu
Published April 24, 2007
[Abstract] [Full Text PDF (126K)] [Buy This Article]

CMOS Devices/Device Physics

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2015-2018 : New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond: Cheng-Tung Huang, Kun-Hsien Lee, Li-Shian Jeng, Wen-Han Hung, Shyh-Fann Ting, Meng-Yi Wu, Mei-Lun Tseng, Osbert Cheng, and Chia-Wen Liang
Published April 24, 2007
[Abstract] [Full Text PDF (180K)] [Buy This Article]
2019-2022 : Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors: Jone F. Chen, Kuo-Ming Wu, J. R. Lee, Yan-Kuin Su, H. C. Wang, Y. C. Lin, and S. L. Hsu
Published April 24, 2007
[Abstract] [Full Text PDF (122K)] [Buy This Article]
2023-2026 : Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices: Zhiliang Xia, Gang Du, Yuncheng Song, Jian Wang, Xiaoyan Liu, Jinfeng Kang, and Ruqi Han
Published April 24, 2007
[Abstract] [Full Text PDF (454K)] [Buy This Article]
2027-2031 : Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors: Ching-Sen Lu, Horng-Chih Lin, Jian-Ming Huang, Chia-Yu Lu, Yao-Jen Lee, and Tiao-Yuan Huang
Published April 24, 2007
[Abstract] [Full Text PDF (173K)] [Buy This Article]
2032-2036 : Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures: Hsin-Hui Hu, Kun-Ming Chen, Guo-Wei Huang, Chun-Yen Chang, Yii-Chian Lu, Yu-Chi Yang, and Eric Cheng
Published April 24, 2007
[Abstract] [Full Text PDF (191K)] [Buy This Article]
2037-2040 : A New 1200 V Punch Through-Insulated Gate Bipolar Transistor with Protection Circuit Employing Lateral Insulated Gate Bipolar Transistor and Floating p-Well Voltage Sensing Scheme: In-Hwan Ji, Young-Hwan Choi, Byung-Chul Jeon, Seung-Chul Lee, Kwang-Hoon Oh, Chong-Man Yun, Young-Hwan Han, Byung-Chul Lee, and Min-Koo Han
Published April 24, 2007
[Abstract] [Full Text PDF (183K)] [Buy This Article]
2041-2045 : A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit: In-Hwan Ji, Young-Hwan Choi, Min-Woo Ha, and Min-Koo Han
Published April 24, 2007
[Abstract] [Full Text PDF (214K)] [Buy This Article]
2046-2049 : Novel Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors with Self-Aligned Structure: Jae Young Song, Woo Young Choi, Jong Pil Kim, Sang Wan Kim, Jong Duk Lee, and Byung-Gook Park
Published April 24, 2007
[Abstract] [Full Text PDF (303K)] [Buy This Article]
2050-2053 : Control of Subthreshold Characteristics of Narrow-Channel Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Transistor with Additional Side Gate Electrodes: Kiyoshi Okuyama, Koji Yoshikawa, and Hideo Sunami
Published April 24, 2007
[Abstract] [Full Text PDF (260K)] [Buy This Article]
2054-2057 : New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors: Syunichi Watabe, Shigetoshi Sugawa, Akinobu Teramoto, and Tadahiro Ohmi
Published April 24, 2007
[Abstract] [Full Text PDF (352K)] [Buy This Article]
2058-2061 : Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors: Kian-Ming Tan, Tsung-Yang Liow, Rinus T. P. Lee, King-Jien Chui, Chih-Hang Tung, N. Balasubramanian, Ganesh S. Samudra, Won-Jong Yoo, and Yee-Chia Yeo
Published April 24, 2007
[Abstract] [Full Text PDF (219K)] [Buy This Article]
2062-2066 : Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement: Grace Huiqi Wang, Eng-Huat Toh, Chih-Hang Tung, Anyan Du, Guo-Qiang Lo, Ganesh Samudra, and Yee-Chia Yeo
Published April 24, 2007
[Abstract] [Full Text PDF (302K)] [Buy This Article]
2067-2072 : Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors: Zhaomin Zhu, Xing Zhou, Karthik Chandrasekaran, Subhash C. Rustagi, and Guan Huei See
Published April 24, 2007
[Abstract] [Full Text PDF (233K)] [Buy This Article]
2073-2075 : The Effect of Side Traps on Ballistic Transistor in Kondo Regime: Tetsufumi Tanamoto, Ken Uchida, and Shinobu Fujita
Published April 24, 2007
[Abstract] [Full Text PDF (108K)] [Buy This Article]
2076-2078 : Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures: Hideki Minari and Nobuya Mori
Published April 24, 2007
[Abstract] [Full Text PDF (227K)] [Buy This Article]
2079-2083 : Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process: Katsuyuki Horita, Masato Ishibashi, Hiroshi Umeda, Takaaki Kawahara, Taketoshi Ikeda, Tomohiro Yamashita, Takashi Kuroi, Yasuo Inoue, and Yasutaka Horiba
Published April 24, 2007
[Abstract] [Full Text PDF (166K)] [Buy This Article]
2084-2090 : Potential of and Issues with Multiple-Stressor Technology in High-Performance 45 nm Generation Devices: Toshihiko Miyashita, Akiyoshi Hatada, Yousuke Shimamune, Tamotsu Owada, Naoyoshi Tamura, Takayuki Aoyama, and Shigeo Satoh
Published April 24, 2007
[Abstract] [Full Text PDF (599K)] [Buy This Article]
2091-2095 : Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications: Masataka Miyake, Norio Sadachika, Dondee Navarro, Yoshio Mizukane, Kenji Matsumoto, Tatsuya Ezaki, Mitiko Miura-Mattausch, Hans Juergen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, and Shunsuke Miyamoto
Published April 24, 2007
[Abstract] [Full Text PDF (211K)] [Buy This Article]
2096-2100 : Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling: Hideki Oka, Ryo Tanabe, Norio Sadachika, Akihiro Yumisaki, and Mitiko Miura-Mattausch
Published April 24, 2007
[Abstract] [Full Text PDF (328K)] [Buy This Article]
2101-2106 : N-Type Extended Drain Silicon Controlled Rectifier Electrostatic Discharge Protection Device for High-Voltage Operating Input/Output Applications: Yong-Jin Seo and Kil-Ho Kim
Published April 24, 2007
[Abstract] [Full Text PDF (218K)] [Buy This Article]
2107-2111 : Impact of Source/Drain Si_1-yC_y Stressors on Silicon-on-Insulator N-type Metal–Oxide–Semiconductor Field-Effect Transistors: Chung-Yi Lin, Shu-Tong Chang, Jacky Huang, Wei-Ching Wang, and Jun-Wei Fan
Published April 24, 2007
[Abstract] [Full Text PDF (198K)] [Buy This Article]
2112-2116 : Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants: Stanislav Markov, Andrew R. Brown, Binjie Cheng, Gareth Roy, Scott Roy, and Asen Asenov
Published April 24, 2007
[Abstract] [Full Text PDF (169K)] [Buy This Article]
2117-2121 : Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy: Takashi Uehara, Hiroshi Matsubara, Ryosho Nakane, Satoshi Sugahara, and Shin-ichi Takagi
Published April 24, 2007
[Abstract] [Full Text PDF (291K)] [Buy This Article]
2122-2126 : Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Takuya Hoshii, Satoshi Sugahara, and Shin-ichi Takagi
Published April 24, 2007
[Abstract] [Full Text PDF (158K)] [Buy This Article]
2127-2130 : Efficient Mobility Enhancement Engineering on 65 nm Fully Silicide Complementary Metal–Oxide–Semiconductor Field-Effect-Transistors Using Second Contect Etch Stop Layer Process: Chieh-Ming Lai, Yean-Kuen Fang, Chien-Ting Lin, and Wen-Kuan Yeh
Published April 24, 2007
[Abstract] [Full Text PDF (193K)] [Buy This Article]
2131-2133 : Extra Bonus on Transistor Optimization with Stress Enhanced Notched-Gate Technology for Sub-90 nm Complementary Metal Oxide Semiconductor Field Effect Transistor: Chien-Ting Lin, Yean-Kuen Fang, Chieh-Ming Lai, Wen-Kuan Yeh, Che-Hua Hsu, Li-Wei Cheng, Yao-Tsung Huang, and Guang Hwa Ma
Published April 24, 2007
[Abstract] [Full Text PDF (156K)] [Buy This Article]

Advanced Memory Technology

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2134-2138 : Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices: Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Yong Soo Kim, Moon Sig Joo, Ju-Hee Lee, Tae-Yoon Kim, Hong-Seon Yang, Seung-Ho Pyi, and Jin Woong Kim
Published April 24, 2007
[Abstract] [Full Text PDF (330K)] [Buy This Article]
2139-2142 : Impact of (111)-Oriented SrRuO₃/Pt Tailored Electrode for Highly Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O₃ Films for High Density Ferroelectric Random Access Memory Applications: Nicolas Menou, Hiroki Kuwabara, and Hiroshi Funakubo
Published April 24, 2007
[Abstract] [Full Text PDF (376K)] [Buy This Article]
2143-2147 : Capacitorless Dynamic Random Access Memory Cell with Highly Scalable Surrounding Gate Structure: Hoon Jeong, Yeun Seung Lee, Sangwoo Kang, Il Han Park, Woo Young Choi, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park
Published April 24, 2007
[Abstract] [Full Text PDF (326K)] [Buy This Article]
2148-2152 : Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O₂/NO Plasma Oxynitridation: Tomoyuki Suwa, Hiroto Takahashi, Yuki Kumagai, Genya Fujita, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 24, 2007
[Abstract] [Full Text PDF (154K)] [Buy This Article]
2153-2156 : Resistive Switching Properties of SrZrO₃-Based Memory Films: Chun-Chieh Lin, Chao-Cheng Lin, Bing-Chung Tu, Jung-Sheng Yu, Chen-Hsi Lin, and Tseung-Yuen Tseng
Published April 24, 2007
[Abstract] [Full Text PDF (522K)] [Buy This Article]
2157-2163 : Overview and Future Challenge of Ferroelectric Random Access Memory Technologies: Yoshihisa Kato, Yukihiro Kaneko, Hiroyuki Tanaka, Kazuhiro Kaibara, Shinzo Koyama, Kazunori Isogai, Takayoshi Yamada, and Yasuhiro Shimada
Published April 24, 2007
[Abstract] [Full Text PDF (366K)] [Buy This Article]
2164-2166 : Lateral and Vertical Magnetic Interactions in Submicron-Sized Fe Ring Arrays and Fe/Au/Fe Trilayer Ring Structures (Brief Communication): Makoto Kohda, Ken Takagi, Tetsuya Miyawaki, Kazuya Toyoda, Asaya Fujita, and Junsaku Nitta
Published April 24, 2007
[Abstract] [Full Text PDF (298K)] [Buy This Article]
2167-2171 : New Magnetic Nanodot Memory with FePt Nanodots: Cheng-Kuan Yin, Mariappan Murugesan, Ji-Chel Bea, Mikihiko Oogane, Takafumi Fukushima, Tetsu Tanaka, Shozo Kono, Seiji Samukawa, and Mitsumasa Koyanagi
Published April 24, 2007
[Abstract] [Full Text PDF (338K)] [Buy This Article]
2172-2174 : Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides: In-Sung Park, Kyong-Rae Kim, Sangsul Lee, and Jinho Ahn
Published April 24, 2007
[Abstract] [Full Text PDF (98K)] [Buy This Article]
2175-2179 : Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide: Heng-Yuan Lee, Pang-Shiu Chen, Ching-Chiun Wang, Siddheswar Maikap, Pei-Jer Tzeng, Cha-Hsin Lin, Lurng-Shehng Lee, and Ming-Jinn Tsai
Published April 24, 2007
[Abstract] [Full Text PDF (255K)] [Buy This Article]
2180-2183 : Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process: K. R. Udayakumar, T. S. Moise, S. R. Summerfelt, K. Boku, K. A. Remack, J. Gertas, A. Haider, Y. Obeng, J. S. Martin, J. Rodriguez, G. Shinn, A. McKerrow, J. Eliason, R. Bailey, and G. R. Fox
Published April 24, 2007
[Abstract] [Full Text PDF (128K)] [Buy This Article]
2184-2187 : Advanced Air Gap Process for Multi-Level-Cell Flash Memories Reducing Threshold Voltage Interference and Realizing High Reliability: Keisuke Tsukamoto, Tatsunori Murata, Tatsuya Fukumura, Fumihito Ohta, Takayuki Yoshitake, Satoshi Shimizu, Yoshihiro Ikeda, Koyu Asai, Masahiro Shimizu, and Osamu Tsuchiya
Published April 24, 2007
[Abstract] [Full Text PDF (156K)] [Buy This Article]
2188-2192 : Scalable Wordline Shielding Scheme using Dummy Cell beyond 40 nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell: Ki-Tae Park, SeungChul Lee, Jong-Sun Sel, Jungdal Choi, and Kinam Kim
Published April 24, 2007
[Abstract] [Full Text PDF (186K)] [Buy This Article]
2193-2196 : Incorporation Effect of Thin Al₂O₃ Layers on ZrO₂–Al₂O₃ Nanolaminates in a Composite Oxide–High-κ-Oxide Stack for Floating-Gate Flash Memory Devices: Moon Sig Joo, Seung Ryong Lee, Hong-Seon Yang, Kwon Hong, Se-Aug Jang, Jaehyoung Koo, Jaemun Kim, Seungwoo Shin, Myungok Kim, Seungho Pyi, Nojung Kwak, and Jin Woong Kim
Published April 24, 2007
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2197-2199 : Fin-Type Field-Effect Transistor NAND Flash with Nitride/Silicon Nanocrystal/Nitride Hybrid Trap Layer: Jeong-Dong Choe, Se-Hoon Lee, Jong Jin Lee, Eun Suk Cho, Youngjoon Ahn, Byoung Yong Choi, Suk Kang Sung, Jintae No, Ilsub Chung, Kyucharn Park, and Donggun Park
Published April 24, 2007
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2200-2204 : Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr₂(Ta_1-x,Nb_x)₂O₇ Thin Film on Amorphous SiO₂: Ichirou Takahashi, Kiyoshi Funaiwa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 24, 2007
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2205-2210 : Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO₂ by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device: Ichirou Takahashi, Masaki Hirayama, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 24, 2007
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2211-2214 : Thickness Dependent Nano-Crystallization in Ge₂Sb₂Te₅ Films and Its Effect on Devices: Wei Xiaoqian, Shi Luping, Chong Tow Chong, Zhao Rong, and Lee Hock Koon
Published April 24, 2007
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Advanced Circuits and Systems

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2215-2219 : 60% Power Reduction in Inductive-Coupling Inter-Chip Link by Current-Sensing Technique: Kiichi Niitsu, Noriyuki Miura, Mari Inoue, Yoshihiro Nakagawa, Masamoto Tago, Masayuki Mizuno, Hiroki Ishikuro, and Tadahiro Kuroda
Published April 24, 2007
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2220-2225 : A Novel Vision Chip for High-Speed Target Tracking: Wei Miao, Qingyu Lin, and Nanjian Wu
Published April 24, 2007
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2226-2230 : Low Power Spin-Transfer Magnetoresistive Random Access Memory Writing Scheme with Selective Word Line Bootstrap: Takeaki Sugimura, Takeshi Sakaguchi, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
Published April 24, 2007
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2231-2237 : Mixed Digital–Analog Associative Memory Enabling Fully-Parallel Nearest Euclidean Distance Search: Md. Anwarul Abedin, Yuki Tanaka, Ali Ahmadi, Tetsushi Koide, and Hans Juergen Mattausch
Published April 24, 2007
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2238-2243 : Scalable Motion Estimation Processor Core for Multimedia System-on-Chip Applications: Yeong-Kang Lai, Tian-En Hsieh, and Lien-Fei Chen
Published April 24, 2007
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2244-2251 : On-Die Monitoring of Substrate Coupling for Mixed-Signal Circuit Isolation: Daisuke Kosaka, Masaki Fujiwara, Takumi Danjo, and Makoto Nagata
Published April 24, 2007
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2252-2256 : 0.6 V Supply Complementary Metal Oxide Semiconductor Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization: Yoshihiro Masui, Takeshi Yoshida, Mamoru Sasaki, and Atsushi Iwata
Published April 24, 2007
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2257-2260 : Low-Voltage, Low-Phase-Noise Ring Voltage-Controlled Oscillator Using 1/ f-Noise Reduction Techniques: Takeshi Yoshida, Naoya Ishida, Mamoru Sasaki, and Atsushi Iwata
Published April 24, 2007
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2261-2264 : Analysis of On-Chip Asymmetric Coaxial Waveguide Structure for Chip Area Reduction: Ivan Chee Hong Lai and Minoru Fujishima
Published April 24, 2007
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2265-2270 : Hardware Architecture for Pseudo-Two-Dimensional Hidden-Markov-Model-Based Face Recognition Systems Employing Laplace Distribution Functions: Yasufumi Suzuki and Tadashi Shibata
Published April 24, 2007
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2271-2277 : A Hardware-Implementation-Friendly Pulse-Coupled Neural Network Algorithm for Analog Image-Feature-Generation Circuits: Jun Chen and Tadashi Shibata
Published April 24, 2007
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2278-2282 : Efficient Quantum Computing Emulation System with Unitary Macro-Operations: Yosuke Goto and Minoru Fujishima
Published April 24, 2007
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2283-2286 : On-Chip Yagi–Uda Antenna for Horizontal Wireless Signal Transmission in Stacked Multi Chip Packaging: Kazuma Ohashi, Tackya Yammouch, Makoto Kimura, Hiroyuki Ito, Kenichi Okada, Kazuhisa Itoi, Masakazu Sato, Tatsuya Ito, Ryozo Yamauchi, and Kazuya Masu
Published April 24, 2007
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Compound Semiconductor Circuits, Electron Devices and Device Physics

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2287-2290 : New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors: Young-Hwan Choi, Min-Woo Ha, Jiyong Lim, and Min-Koo Han
Published April 24, 2007
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2291-2295 : SiO₂ Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate: Min-Woo Ha, Young-Hwan Choi, Jiyong Lim, and Min-Koo Han
Published April 24, 2007
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2296-2299 : Gate Length Reduction Technology for Pseudomorphic In_0.52Al_0.48As/In_0.7Ga_0.3As High Electron Mobility Transistors: Seong-Jin Yeon, Jongwon Lee, Gyungseon Seol, and Kwangseok Seo
Published April 24, 2007
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2300-2305 : High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology: Hyungtae Kim, Seongjin Yeon, and Kwangseok Seo
Published April 24, 2007
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2306-2308 : High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices: Koichi Maezawa, Youhei Ookawa, Shigeru Kishimoto, Takashi Mizutani, Misao Takakusaki, and Hirofumi Nakata
Published April 24, 2007
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2309-2311 : High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO₂/SiN Gate Insulator: Shuichi Yagi, Mitsuaki Shimizu, Hajime Okumura, Hiromichi Ohashi, Yoshiki Yano, and Nakao Akutsu
Published April 24, 2007
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2312-2315 : C-Band GaN-Based Field-Effect-Transistor Power Amplifiers with 170-W Output Power: Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Akio Wakejima, Kohji Matsunaga, Kazuki Ota, and Hironobu Miyamoto
Published April 24, 2007
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2316-2319 : High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate: Atsushi Nishikawa, Kazuhide Kumakura, and Toshiki Makimoto
Published April 24, 2007
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2320-2324 : Inductively Coupled Plasma Reactive Ion Etching with SiCl₄ Gas for Recessed Gate AlGaN/GaN Heterostructure Field Effect Transistor: Kazuaki Matsuura, Daigo Kikuta, Jin-Ping Ao, Hiromichi Ogiya, Michihiro Hiramoto, Hiroji Kawai, and Yasuo Ohno
Published April 24, 2007
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2325-2329 : Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor: Issei Watanabe, Keisuke Shinohara, Takahiro Kitada, Satoshi Shimomura, Akira Endoh, Yoshimi Yamashita, Takashi Mimura, Satoshi Hiyamizu, and Toshiaki Matsui
Published April 24, 2007
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2330-2333 : Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors: Ruonan Wang, Yong Cai, Wilson C. W. Tang, Kei May Lau, and Kevin J. Chen
Published April 24, 2007
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2334-2337 : Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors: Toshihide Ide, Mitsuaki Shimizu, Akira Nakajima, Masaki Inada, Shuichi Yagi, Guanxi Piao, Yoshiki Yano, Nakao Akutsu, Hajime Okumura, and Kazuo Arai
Published April 24, 2007
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2338-2340 : Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance (<100 Ω/square): Kazuhide Kumakura and Toshiki Makimoto
Published April 24, 2007
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2341-2343 : Passivation Effects of 100 nm In_0.4AlAs/In_0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition: Sungwon Kim, Kyoungchul Jang, Gyungseon Seol, Jincherl Her, and Kwangseok Seo
Published April 24, 2007
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2344-2347 : Highly Stable Thermal Characteristics of a Novel In_0.3Ga_0.7As_0.99N_0.01(Sb)/GaAs High-Electron-Mobility Transistor: Ke-Hua Su, Wei-Chou Hsu, Ching-Sung Lee, Po-Jung Hu, Ru-Shang Hsiao, Jenn-Fang Chen, and Tung-Wei Chi
Published April 24, 2007
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2348-2351 : Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain: Heon-Bok Lee, Hyun-Ick Cho, Hyun-Su An, Jung-Hee Lee, and Sung-Ho Hahm
Published April 24, 2007
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Photonic Devices and Device Physics

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2352-2359 : A New Photodiode Model for SPICE Simulation of Complementary Metal–Oxide–Semiconductor Image Sensors: Wen-Jen Chiang, Hung-Chu Chen, and Ya-Chin King
Published April 24, 2007
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2360-2363 : Effect of Temperature on Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Traveling-Carrier Photodiodes: Dong-Hwan Jun, Jae-Hyung Jang, and Jong-In Song
Published April 24, 2007
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2364-2368 : Compact Multimode Optical Ring Resonators for Interconnection on Silicon Chips: Yuichiro Tanushi and Shin Yokoyama
Published April 24, 2007
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2369-2372 : Tunable Slow Light of 1.3 µm Region in Quantum Dots at Room Temperature: Hideki Gotoh, Shu-Wei Chang, Shun-Lien Chuang, Hiroshi Okamoto, and Yasuo Shibata
Published April 24, 2007
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2373-2376 : InGaAsN Metal–Semiconductor–Metal Photodetectors with Transparent Indium Tin Oxide Schottky Contacts: Yan-Kuin Su, Wei-Cheng Chen, Ricky W. Chuang, Shuo-Hsien Hsu, and Bing-Yang Chen
Published April 24, 2007
[Abstract] [Full Text PDF (143K)] [Buy This Article]
2377-2380 : Lock-in Pixel Using a Current-Assisted Photonic Demodulator Implemented in 0.6 µm Standard Complemetary Metal–Oxide–Semiconductor: Ward van der Tempel, Daniel Van Nieuwenhove, Riemer Grootjans, and Maarten Kuijk
Published April 24, 2007
[Abstract] [Full Text PDF (166K)] [Buy This Article]
2381-2384 : Optical Responses of Josephson Vortex Flow Transistors under Irradiation of Femtosecond Laser Pulses: Yasushi Doda, Iwao Kawayama, Hironaru Murakami, and Masayoshi Tonouchi
Published April 24, 2007
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2385-2388 : Photocell System Driven by Mechanoluminescence: Nao Terasaki, Chao-Nan Xu, Yusuke Imai, and Hiroshi Yamada
Published April 24, 2007
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2389-2394 : Design and Characterization of 1×128 In_0.53Ga_0.47As/InP Photodetector Linear Array with Improved Optical Sensitivity and Shunt Resistance: Young Chang Jo, Hong Joo Song, Hoon Kim, Hyo Derk Park, and Pyong Choi
Published April 24, 2007
[Abstract] [Full Text PDF (369K)] [Buy This Article]
2395-2400 : Novel Optical/Electrical Printed Circuit Board with Polynorbornene Optical Waveguide: Makoto Fujiwara, Yoji Shirato, Hiroshi Owari, Kei Watanabe, Mutsuhiro Matsuyama, Keizo Takahama, Tetsuya Mori, Kenji Miyao, Koji Choki, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
Published April 24, 2007
[Abstract] [Full Text PDF (423K)] [Buy This Article]
2401-2404 : Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates: Naokatsu Yamamoto, Kouichi Akahane, Shin-ichirou Gozu, Akio Ueta, Naoki Ohtani, and Masahiro Tsuchiya
Published April 24, 2007
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2405-2408 : Optical Constants of β-FeSi₂ Film on Si Substrate Obtained from Transmittance and Reflectance Data and Origin of Urbach Tail: Hirofumi Kakemoto, Tohru Higuchi, Hajime Shibata, Satoshi Wada, and Takaaki Tsurumi
Published April 24, 2007
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2409-2412 : Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device: Yahya Moubarak Meziani, Mitsuhiro Hanabe, Taiichi Otsuji, and Eiichi Sano
Published April 24, 2007
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2413-2417 : Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, Yu-Tai Shih, and Chien-Lin Lu
Published April 24, 2007
[Abstract] [Full Text PDF (433K)] [Buy This Article]
2418-2420 : Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes: Sumon K. Ray, Hui Y. Liu, Tom L. Choi, Kristian M. Groom, San L. Liew, Mark Hopkinson, and Richard A. Hogg
Published April 24, 2007
[Abstract] [Full Text PDF (109K)] [Buy This Article]
2421-2423 : Zero and Controllable Linewidth Enhancement Factor in p-Doped 1.3 µm Quantum Dot Lasers: Ryan R. Alexander, David Childs, Harsh Agarwal, Kristian M. Groom, Hui Y. Liu, Mark Hopkinson, and Richard A. Hogg
Published April 24, 2007
[Abstract] [Full Text PDF (137K)] [Buy This Article]
2424-2428 : Fabrication and Characterization of InP-Based Quantum Cascade Distributed Feedback Lasers with Inductively Coupled Plasma Etched Lateral Gratings: Kenneth Kennedy, Dmitry G. Revin, Andrey B. Krysa, Kristian M. Groom, Luke R. Wilson, John W. Cockburn, and Richard A. Hogg
Published April 24, 2007
[Abstract] [Full Text PDF (176K)] [Buy This Article]
2429-2433 : Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure: Bernard Gelloz and Nobuyoshi Koshida
Published April 24, 2007
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2434-2439 : Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides: Woo-Seok Choi, Weifeng Zhao, Jeong-Woon Bae, Ilesanmi Adesida, Bong-Ahn Yu, Yeung Lak Lee, and Jae-Hyung Jang
Published April 24, 2007
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2440-2444 : Integrated Optical Beam Splitters Employing Symmetric Mode Mixing in SiO₂/SiON/SiO₂ Multimode Interference Waveguides: Ricky W. Chuang, Zhen-Liang Liao, and Chih-Kai Chang
Published April 24, 2007
[Abstract] [Full Text PDF (255K)] [Buy This Article]
2445-2449 : Silicon Optical Modulators in Silicon-on-Insulator Substrate Based on the p–i–n Waveguide Structure: Ricky W. Chuang and Mao-Teng Hsu
Published April 24, 2007
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2450-2453 : High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application: Yea-Chen Lee, Chia-En Lee, Bo-Siao Cheng, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, and Shu-Woei Chiou
Published April 24, 2007
[Abstract] [Full Text PDF (204K)] [Buy This Article]
2454-2457 : Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 µm Pixel Pitch: Byung Jun Park, Jongwan Jung, Chang-Rok Moon, Sung Ho Hwang, Yong Woo Lee, Dae Woong Kim, Kee Hyun Paik, Jong Ryeol Yoo, Duck Hyung Lee, and Kinam Kim
Published April 24, 2007
[Abstract] [Full Text PDF (425K)] [Buy This Article]
2458-2461 : Development of Flexible Electrochromic Device with Thin-Film Configuration: Hideo Yoshimura, Tomonori Sakaguchi, and Nobuyoshi Koshida
Published April 24, 2007
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2462-2466 : Transient Response in Monolithic Mach–Zehnder Optical Modulator Using (Ba,Sr)TiO₃ Film Sputtered at Low Temperature on Silicon: Masato Suzuki, Kazuma Nagata, Yuichiro Tanushi, and Shin Yokoyama
Published April 24, 2007
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2467-2470 : Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate: Hideaki Hashimoto, Ryuta Yamada, Takaaki Hirokane, Kenta Arima, Junichi Uchikoshi, and Mizuho Morita
Published April 24, 2007
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2471-2473 : AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers: Shoou-Jinn Chang, Hung Hung, Yi-Chao Lin, Ming-Hsien Wu, Hon Kuan, and Ray-Ming Lin
Published April 24, 2007
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2474-2480 : Injection-Avalanche-Based n⁺pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity: Lukas W. Snyman, Monuko du Plessis, and Herzl Aharoni
Published April 24, 2007
[Abstract] [Full Text PDF (201K)] [Buy This Article]

Advanced Material Synthesis and Crystal Growth Technology

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2481-2485 : Photoluminescence Characterization of Type-II Zn_0.97Mn_0.03Se/ZnSe_0.92Te_0.08 Multiple-Quantum-Well Structures: Jian-Jhin Shiu, Wei-Li Chen, Der-Yuh Lin, Chu-Shou Yang, and Wu-Ching Chou
Published April 24, 2007
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2486-2489 : Band Gap Narrowing and Electron Doping by Potassium Encapsulation into Single-Walled Carbon Nanotubes: Hideyuki Maki, Satoru Suzuki, Tetsuya Sato, and Koji Ishibashi
Published April 24, 2007
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2490-2492 : Facile Fabrication of Gold Nanoparticle–Titanium Oxide Alternate Assemblies by Surface Sol–Gel Process: Taichi Arakawa, Tomoaki Kawahara, Tsuyoshi Akiyama, and Sunao Yamada
Published April 24, 2007
[Abstract] [Full Text PDF (258K)] [Buy This Article]
2493-2495 : Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition: Jungyol Jo, Ogweon Seo, Euihyuk Jeong, Hyunseok Seo, Byeongon Lee, and Yearn-Ik Choi
Published April 24, 2007
[Abstract] [Full Text PDF (170K)] [Buy This Article]
2496-2500 : Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy: Takeo Umesaka, Hirofumi Ohnaka, Yutaka Ohno, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani
Published April 24, 2007
[Abstract] [Full Text PDF (389K)] [Buy This Article]
2501-2504 : Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation: Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, and Takashi Ito
Published April 24, 2007
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2505-2509 : Development of Constraint Algorithm for the Number of Electrons in Molecular Orbitals Consisting Mainly 4 f Atomic Orbitals of Rare-Earth Elements and Its Introduction to Tight-Binding Quantum Chemical Molecular Dynamics Method: Akira Endou, Hiroaki Onuma, Sun-ho Jung, Ryota Ishimoto, Hideyuki Tsuboi, Michihisa Koyama, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 24, 2007
[Abstract] [Full Text PDF (176K)] [Buy This Article]
2510-2515 : Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition: Kiyoshi Yasutake, Naotaka Tawara, Hiromasa Ohmi, Yoshikazu Terai, Hiroaki Kakiuchi, Heiji Watanabe, and Yasufumi Fujiwara
Published April 24, 2007
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2516-2518 : Optical Properties of Wurtzite Zn_1-xCd_xO Films Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition (Brief Communication): Toshiya Ohashi, Kenji Yamamoto, Atsushi Nakamura, Toru Aoki, and Jiro Temmyo
Published April 24, 2007
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2519-2522 : Kinetic Monte Carlo Modeling of Boron Diffusion in Strained Silicon: Young-Kyu Kim, Kwan-Sun Yoon, Joong-Sik Kim, and Taeyoung Won
Published April 24, 2007
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2523-2526 : TiO₂ Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application: Cha-Hsin Lin, Ching-Chiun Wang, Pei-Jer Tzeng, Siddheswar Maikap, Heng-Yuan Lee, Lurng-Shehng Lee, and Ming-Jinn Tsai
Published April 24, 2007
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2527-2529 : Amorphous Cu_xGa_1-xO Film Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering: Hiroki Ishikawa, Norikazu Takeuchi, Nario Okuda, Toshio Takeuchi, and Yoshiji Horikoshi
Published April 24, 2007
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2530-2533 : Epitaxial Growth of La_0.7Ba_0.3MnO₃ Thin Films on SrTiO₃ and LaAlO₃ Substrates by Metal-Organic Deposition: Kais Daoudi, Tetsuo Tsuchiya, Tomohiko Nakajima, Iwao Yamaguchi, Takaaki Manabe, and Toshiya Kumagai
Published April 24, 2007
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2534-2541 : Large-Scale Electronic Structure Calculation on Blue Phosphor BaMgAl₁₀O₁₇:Eu²⁺ Using Tight-Binding Quantum Chemistry Method Implemented for Rare-Earth Elements: Hiroaki Onuma, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Parasuraman Selvam, and Akira Miyamoto
Published April 24, 2007
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2542-2553 : Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process: Toru Takeda, Kouji Tanaka, Hirotada Inoue, Masaki Hirayama, Toshirou Tsumori, Herzl Aharoni, and Tadahiro Ohmi
Published April 24, 2007
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2554-2557 : Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy: Yasuyuki Kobayashi, Hiroki Hibino, Tomohiro Nakamura, Tetsuya Akasaka, Toshiki Makimoto, and Nobuo Matsumoto
Published April 24, 2007
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2558-2562 : Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure: Tzer-En Nee, Chih-Chun Ke, Cheng-Wei Hung, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, Chang-Cheng Chuo, and Zheng-Hong Lee
Published April 24, 2007
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2563-2566 : Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time: Dong-Hun Kang, Jae-Chul Song, Byung-Young Shim, Eun-A Ko, Dong-Wook Kim, Santhakumar Kannappan, and Cheul-Ro Lee
Published April 24, 2007
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2567-2570 : Synthesis of Au/TiO₂ Core–Shell Nanoparticles from Titanium Isopropoxide and Thermal Resistance Effect of TiO₂ Shell: Hyun-Woo Kwon, Young-Min Lim, Suraj Kumar Tripathy, Byoung-Gyu Kim, Min-Sang Lee, and Yeon-Tae Yu
Published April 24, 2007
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2571-2573 : Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition: Byung-Young Shim, Eun-A Ko, Jae-Chul Song, Dong-Hun Kang, Dong-Wook Kim, In-Hwan Lee, Santhakumar Kannappan, and Cheul-Ro Lee
Published April 24, 2007
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2574-2577 : Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process: Hou-Guang Chen, Nai-Fang Hsu, Jung-Tang Chu, Hsin-Hung Yao, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang
Published April 24, 2007
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2578-2580 : Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires: Haruki Sanada, Hideki Gotoh, Kouta Tateno, and Hidetoshi Nakano
Published April 24, 2007
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2581-2584 : Electrical Characteristics and Preparation of (Ba_0.5Sr_0.5)TiO₃ Films by Spray Pyrolysis and Rapid Thermal Annealing: Horng-Show Koo, Mi Chen, Hong-Kou Ku, and Tomoji Kawai
Published April 24, 2007
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Physics and Applications of Novel Functional Materials and Devices

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2585-2591 : Spin Drag Effect in Temperature Dependence of Spin-Polarized Electron Mobilities: Yutaka Takahashi, Yuuki Sato, Fumihiko Hirose, and Hitoshi Kawaguchi
Published April 24, 2007
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2592-2595 : Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor: Yun Seop Yu, Seung Hun Son, Hee Tae Kim, Yong Gyu Kim, Jung Hyun Oh, Hanjung Kim, Sung Woo Hwang, Bum Ho Choi, and Doyeol Ahn
Published April 24, 2007
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2596-2598 : Low-Temperature Characteristics of Ambipolar SiO₂/Si/SiO₂ Hall-Bar Devices: Kei Takashina, Benjamin Gaillard, Yukinori Ono, and Yoshiro Hirayama
Published April 24, 2007
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2599-2602 : Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission: Yoshifumi Watabe, Yoshiaki Honda, and Nobuyoshi Koshida
Published April 24, 2007
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2603-2608 : Theoretical Study on the Electronic and Electrical Properties of p-Type Transparent Conducting Metal Oxides: Chen Lv, Agalya Govindasamy, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 24, 2007
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2609-2614 : Development of a Thermal Conductivity Prediction Simulators Based on the Effects of Electron Conduction and Lattice Vibration: Hideyuki Tsuboi, Hiroshi Setogawa, Chutia Arunabhiram, Zhigang Zhu, Chen Lv, Ryuji Miura, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 24, 2007
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2615-2617 : Field-Effect Transistor with Deposited Graphite Thin Film: Hiroshi Inokawa, Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, and Keiichi Torimitsu
Published April 24, 2007
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2618-2621 : Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy: Kyoichi Suzuki, Kiyoshi Kanisawa, Simon Perraud, Mineo Ueki, Kei Takashina, and Yoshiro Hirayama
Published April 24, 2007
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2622-2625 : Novel Tunneling Devices with Multi-Functionality: Woo Young Choi, Jong Duk Lee, and Byung-Gook Park
Published April 24, 2007
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2626-2628 : Exciton Rabi Oscillation in Single Pair of InAs/GaAs Coupled Quantum Dots: Keishiro Goshima, Kazuhiro Komori, Shohgo Yamauchi, Isao Morohashi, and Takeyoshi Sugaya
Published April 24, 2007
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2629-2631 : Nanowire Field-Effect Transistor: Lars-Erik Wernersson, Erik Lind, Lars Samuelson, Truls Löwgren, and Jonas Ohlsson
Published April 24, 2007
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Organic Materials Science, Device Physics, and Applications

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2632-2635 : Characterization and Evaluation of Role of Porphyrin Moiety in meso-Tetrathienylporphyrin–Polythiophene Composite Film: Kosuke Sugawa, Keitaro Kakutani, Tsuyoshi Akiyama, Sunao Yamada, Kensuke Takechi, Tohru Shiga, Tomoyoshi Motohiro, Hideki Nakayama, and Keiichi Kohama
Published April 24, 2007
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2636-2639 : Deep-Level Characterization of Tris(8-hydroxyquinoline) Aluminum with and without Quinacridone Doping: Yoshitaka Nakano, Koji Noda, Hisayoshi Fujikawa, Takeshi Morikawa, and Takeshi Ohwaki
Published April 24, 2007
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2640-2644 : Electrically Stable Organic Thin-Film Transistors and Circuits Using Organic/Inorganic Double-Layer Insulator: Dong-Wook Park, Cheon An Lee, Keum-Dong Jung, Byeong-Ju Kim, Byung-Gook Park, Hyungcheol Shin, and Jong Duk Lee
Published April 24, 2007
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2645-2649 : Inverter Circuits using Pentacene and ZnO Transistors: Hiroyuki Iechi, Yasuyuki Watanabe, and Kazuhiro Kudo
Published April 24, 2007
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2650-2654 : Theoretical Investigation on Electrical and Electronic Properties of Carbon Materials: Arunabhiram Chutia, Zhigang Zhu, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Parasuraman Selvam, and Akira Miyamoto
Published April 24, 2007
[Abstract] [Full Text PDF (187K)] [Buy This Article]
2655-2660 : Theoretical Investigation of the Photophysical Properties of Black Dye Sensitizer [(H₃-tctpy)M(NCS)₃]^- (M = Fe, Ru, Os) in Dye Sensitized Solar Cells: Agalya Govindasamy, Chen Lv, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 24, 2007
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2661-2665 : Full-Swing Pentacene Organic Inverter with Long-Channel Driver and Short-Channel Load: Cheon An Lee, Dong-Wook Park, Keum-Dong Jung, Jong Duk Lee, and Byung-Gook Park
Published April 24, 2007
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2666-2668 : Organic Field-Effect Transistor Integrated Circuits using Self-Alignment Process Technology: Tsutomu Nagai, Shigeki Naka, Hiroyuki Okada, and Hiroyoshi Onnagawa
Published April 24, 2007
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2669-2672 : Build-on Technology of Bidirectional Optical Communication System Using Bifunctional Organic Diodes: Yohsuke Matsushita, Shigeki Naka, Hiroyuki Okada, and Hiroyoshi Onnagawa
Published April 24, 2007
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2673-2677 : Energy Transfer Employing Europium Complex and Blue Phosphorescent Dye and Its Application in White Organic Light-Emitting Diodes: Yuichi Hino, Hirotake Kajii, and Yutaka Ohmori
Published April 24, 2007
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2678-2682 : Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film: Hiroshi Yamauchi, Masaaki Iizuka, and Kazuhiro Kudo
Published April 24, 2007
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2683-2686 : Fowler–Nordheim Tunneling in Electromigrated Break Junctions with Porphyrin Molecules: Yutaka Noguchi, Takashi Nagase, Rieko Ueda, Toshiya Kamikado, Tohru Kubota, and Shinro Mashiko
Published April 24, 2007
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2687-2691 : Investigation of Pentacene Field-Effect Transistor Operation by Optical Second-Harmonic Generation: Takaaki Manaka, Eunju Lim, Ryosuke Tamura, and Mitsumasa Iwamoto
Published April 24, 2007
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2692-2695 : Electronic Structure of Bathocuproine on Metal Studied by Ultraviolet Photoemission Spectroscopy: Susumu Toyoshima, Kazuhisa Kuwabara, Takeaki Sakurai, Tetsuya Taima, Kazuhiro Saito, Hiroo Kato, and Katsuhiro Akimoto
Published April 24, 2007
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2696-2699 : Performance Enhancement of Organic Thin-Film Transistors by Low-Energy Argon Ion Beam Treatment of Gate Dielectric Surface: Sungku Kang, Jaeyoung Park, Sukmo Jung, Hoo-Jeong Lee, Philkook Son, Jae Chang Kim, Tae-Hoon Yoon, and Moonsuk Yi
Published April 24, 2007
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2700-2703 : Self-Aligned Fabrication Process of Electrode for Organic Thin-Film Transistors on Flexible Substrate Using Photosensitive Self-Assembled Monolayers: Tadashi Arai, Naoya Sato, Kazuo Yamaguchi, Masahiro Kawasaki, Masaaki Fujimori, Takeo Shiba, Masahiko Ando, and Kazuyoshi Torii
Published April 24, 2007
[Abstract] [Full Text PDF (138K)] [Buy This Article]
2704-2708 : Experimental Study on Transparent Polymer Light Emitting Diodes Using LiF/Ag/Indium Tin Oxide Cathode: Kou-Chen Liu, Chao-Wen Teng, Yen-Hsun Lu, Yao-Chou Tsai, and Shih-Hsien Chou
Published April 24, 2007
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2709-2713 : Analysis of Threshold Voltage Shift of Pentacene Field Effect Transistor Based on a Maxwell–Wagner Effect: Ryosuke Tamura, Eunju Lim, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 24, 2007
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2714-2716 : Stable Polymer Dielectric Film for Polythiophene Thin Film Transistor on Modified Poly(vinyl phenol) with Polar Functional Group: Po-Yuan Lo, Zing-way Pei, Feng-Yu Yang, Yu-Rung Peng, Yu-Chung Lin, and Yi-Jen Chan
Published April 24, 2007
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2717-2721 : Improvement in On/Off Ratio of Pentacene Static Induction Transistors by Controlling Hole Injection Barrier: Yasuyuki Watanabe, Hiroyuki Iechi, and Kazuhiro Kudo
Published April 24, 2007
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2722-2726 : Optical Second-Harmonic Generation Measurements of Hole Carrier Injection and Trapping in Pentacene Field-Effect Transistor: Eunju Lim, Takaaki Manaka, Ryosuke Tamura, and Mitsumasa Iwamoto
Published April 24, 2007
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2727-2730 : Top Emission Organic Light-Emitting Diodes with Double-Metal-Layer Anode: Cheng-Ru Tsai, Yu-Sheng Tsai, Fuh-Shyang Juang, Pei-Hsun Yeh, Yong-Chao Chen, and Chi-Chung Liu
Published April 24, 2007
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2731-2734 : Simulation for Double Ultrathin Separately Doped Red Organic Light-Emitting Diode: Shun-Hsi Wang, Yu-Sheng Tsai, Fuh-Shyang Juang, and Tao-Sheng Li
Published April 24, 2007
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2735-2739 : Efficient Red Electrophosphorescent Devices Based on Iridium Complexes of Fluorinated 1-Phenylisoquinoline: Gui Youn Park, Ji-hyun Seo, Young Kwan Kim, Young Sik Kim, and Yunkyoung Ha
Published April 24, 2007
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2740-2744 : Cooperative Molecular Field Effect on the Surface Potential of Tris(8-quinolinato)aluminum Films: Norifumi Kajimoto, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 24, 2007
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2745-2748 : Measurement of Tunneling Current of Self-Assembled Viologen Derivative Molecules Using Scanning Tunneling Microscopy: Nam-Suk Lee, Hoon-Kyu Shin, Dong-Jin Qian, and Young-Soo Kwon
Published April 24, 2007
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2749-2752 : White Organic Light-Emitting Diode Using Blue-Light-Emitting Zn(HPB)₂ Material: Dong-Eun Kim, Won-Sam Kim, Burm-Jong Lee, and Young-Soo Kwon
Published April 24, 2007
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2753-2757 : Significantly Improved Luminance of Organic Light-Emitting Diodes by Doping Iodine and Nitrogen Treatment: Tse-Heng Chou, Shih-Fang Chen, Yuen-Kuen Fang, Shui-Ching Hou, Fu-Sheng Lin, and Chun-Yu Lin
Published April 24, 2007
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Micro/Nano Electromechanical and Bio-Systems

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2758-2760 : High-Performance Radio Frequency Passive Devices on Plastic Substrates for Radio Frequency Integrated Circuit Application: Bing-Fang Hung, Chia-Chung Chen, Hsuan-Ling Kao, and Albert Chin
Published April 24, 2007
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2761-2763 : Micromolding of Three-Dimensional Metal Structures by Electroless Plating of Photopolymerized Resin: Kohki Mukai, Toshiya Yoshimura, and Shoji Maruo
Published April 24, 2007
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2764-2767 : Development of a Functional Chromosome Nano-Dissection System Using Porous Anodic Alumina Pattern Chip and Cantilever: Do-Kyun Kim, Masato Saito, Young-Soo Kwon, and Eiichi Tamiya
Published April 24, 2007
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2768-2770 : Wafer-Level Packaging for Micro-Electro-Mechanical Systems Using Surface Activated Bonding: Yoshiyuki Takegawa, Toru Baba, Takafumi Okudo, and Yuji Suzuki
Published April 24, 2007
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2771-2774 : Fabrication and Characterization of Quartz Nanopillars for DNA Separation by Size: Ryo Ogawa, Noritada Kaji, Shingi Hashioka, Yoshinobu Baba, and Yasuhiro Horiike
Published April 24, 2007
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2775-2780 : Integrated DNA Purification and Detection Device for Diagnosis of Infectious Disease: Shingi Hashioka, Ryo Ogawa, Hiroki Ogawa, and Yasuhiro Horiike
Published April 24, 2007
[Abstract] [Full Text PDF (346K)] [Buy This Article]
2781-2784 : Piezoelectric Optical Micro Scanner with Built-in Torsion Sensors: Takeshi Kobayashi and Ryutaro Maeda
Published April 24, 2007
[Abstract] [Full Text PDF (146K)] [Buy This Article]
2785-2791 : Evaluation of Platinum-Black Stimulus Electrode Array for Electrical Stimulation of Retinal Cells in Retinal Prosthesis System: Taiichiro Watanabe, Risato Kobayashi, Ken Komiya, Takafumi Fukushima, Hiroshi Tomita, Eriko Sugano, Hiroyuki Kurino, Tetsu Tanaka, Makoto Tamai, and Mitsumasa Koyanagi
Published April 24, 2007
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2792-2798 : Fabrication and Validation of Multichip Neural Stimulator for In vivo Experiments toward Retinal Prosthesis: Takashi Tokuda, Sachie Sugitani, Mari Taniyama, Akihiro Uehara, Yasuo Terasawa, Keiichiro Kagawa, Masahiro Nunoshita, Yasuo Tano, and Jun Ohta
Published April 24, 2007
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2799-2805 : Lipid-Modulated Assembly of Magnetized Iron-Filled Carbon Nanotubes in Millimeter-Scale Structures: Nashville C. Toledo, Maurits R. R. de Planque, Sonia Antoranz Contera, Nicole Grobert, and John F. Ryan
Published April 24, 2007
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2806-2810 : A New Scheme for Imaging On-Chip Dry DNA Spots using Optical/Potential Dual-Image Complementary Metal Oxide Semiconductor Sensor: Takashi Tokuda, Issei Kadowaki, Keiichiro Kagawa, Masahiro Nunoshita, and Jun Ohta
Published April 24, 2007
[Abstract] [Full Text PDF (180K)] [Buy This Article]
2811-2819 : Development of a Fully Integrated Complementary Metal–Oxide–Semiconductor Image Sensor-Based Device for Real-Time In vivo Fluorescence Imaging inside the Mouse Hippocampus: David C. Ng, Takuma Nakagawa, Takashi Tokuda, Masahiro Nunoshita, Hideki Tamura, Yasuyuki Ishikawa, Sadao Shiosaka, and Jun Ohta
Published April 24, 2007
[Abstract] [Full Text PDF (379K)] [Buy This Article]
2820-2826 : Characteristics of Radio-Frequency Microelectromechanical-System Switches for Communication Systems: Yeong-Lin Lai and Yueh-Hung Chen
Published April 24, 2007
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