JJAP ONLINE : Table of Contents

Table of Contents: Vol. 47, No. 4 (2008)

Special Issue: Solid State Devices & Materials

Advanced Gate Stack/Si Processing Science
Characterization and Materials Engineering for Interconnect Integration
CMOS Devices/Device Physics
Advanced Memory Technology
Advanced Circuits and Systems
Compound Semiconductor Circuits, Electron Devices and Device Physics
Photonic Devices and Device Physics
Advanced Material Synthesis and Crystal Growth Technology
Physics and Applications of Novel Functional Materials and Devices
Organic Materials Science, Device Physics, and Applications
Micro/Nano Electromechanical and Bio-Systems (Devices)
Spintronic Materials and Devices
Applications of Nanotubes and Nanowires

Advanced Gate Stack/Si Processing Science

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2345-2348 : Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices: Kaori Tai, Shinpei Yamaguchi, Kazuki Tanaka, Tomoyuki Hirano, Itaru Oshiyama, Salam Kazi, Takashi Ando, Masashi Nakata, Mayumi Yamanaka, Ryo Yamamoto, Sayuri Kanda, Yasushi Tateshita, Hitoshi Wakabayashi, Yukio Tagawa, Masanori Tukamoto, Hayato Iwamoto, Masaki Saito, Naoki Nagashima, and Shingo Kadomura
Published April 25, 2008
[Abstract] [Full Text PDF (232K)]
2349-2353 : Direct Evidence of GeO Volatilization from GeO₂/Ge and Impact of Its Suppression on GeO₂/Ge Metal–Insulator–Semiconductor Characteristics: Koji Kita, Sho Suzuki, Hideyuki Nomura, Toshitake Takahashi, Tomonori Nishimura, and Akira Toriumi
Published April 25, 2008
[Abstract] [Full Text PDF (237K)]
2354-2359 : Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-k/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm: Motoyuki Sato, Kikuo Yamabe, Kenji Shiraishi, Seiichi Miyazaki, Keisaku Yamada, Chihiro Tamura, Ryu Hasunuma, Seiji Inumiya, Takayuki Aoyama, Yasuo Nara, and Yuzuru Ohji
Published April 25, 2008
[Abstract] [Full Text PDF (234K)]
2360-2364 : Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiN_x Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors: Takashi Onizawa, Motoyuki Sato, Takayuki Aoyama, Takahisa Eimori, Yasuo Nara, and Yuzuru Ohji
Published April 25, 2008
[Abstract] [Full Text PDF (311K)]
2365-2368 : Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors: Nobuyuki Ikarashi, Makiko Oshida, Makoto Miyamura, Motofumi Saitoh, Akira Mineji, and Seiichi Shishiguchi
Published April 25, 2008
[Abstract] [Full Text PDF (290K)]
2369-2374 : Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO₂ Gate Dielectrics: Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, and Kouichi Ono
Published April 25, 2008
[Abstract] [Full Text PDF (226K)]
2375-2378 : Suppression of Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors: Nobuyuki Mise, Takeo Matsuki, Toshinari Watanabe, Tetsu Morooka, Takahisa Eimori, and Yasuo Nara
Published April 25, 2008
[Abstract] [Full Text PDF (262K)]
2379-2382 : Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSi_x/HfO₂ Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment: Itaru Oshiyama, Kaori Tai, Tomoyuki Hirano, Shinpei Yamaguchi, Kazuaki Tanaka, Yoshiya Hagimoto, Takayuki Uemura, Takashi Ando, Koji Watanabe, Ryo Yamamoto, Saori Kanda, Junli Wang, Yasushi Tateshita, Hitoshi Wakabayashi, Yukio Tagawa, Masanori Tsukamoto, Hayato Iwamoto, Masaki Saito, Masaharu Oshima, Satoshi Toyoda, Naoki Nagashima, and Shingo Kadomura
Published April 25, 2008
[Abstract] [Full Text PDF (278K)]
2383-2387 : Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction: Andy Eu-Jin Lim, Rinus T. P. Lee, Alvin T. Y. Koh, Ganesh S. Samudra, Dim-Lee Kwong, and Yee-Chia Yeo
Published April 25, 2008
[Abstract] [Full Text PDF (268K)]
2388-2397 : Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation: Masakatsu Tsuchiaki and Akira Nishiyama
Published April 25, 2008
[Abstract] [Full Text PDF (562K)]
2398-2401 : Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation: Kazuhiko Yamamoto, Shinsuke Sakashita, Yoshihiro Sato, Masao Inoue, Masatoshi Anma, Tsutomu Oosuka, and Jiro Yugami
Published April 25, 2008
[Abstract] [Full Text PDF (120K)]
2402-2406 : Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi₂/Si Schottky Contacts Formed from Ni/Ti/Si System: Osamu Nakatsuka, Atsushi Suzuki, Shingo Akimoto, Akira Sakai, Masaki Ogawa, and Shigeaki Zaima
Published April 25, 2008
[Abstract] [Full Text PDF (270K)]
2407-2409 : Optimized Silicidation Technique for Source and Drain of Fin-Type Field-Effect Transistor: Kiyoshi Okuyama, Atsushi Sugimura, and Hideo Sunami
Published April 25, 2008
[Abstract] [Full Text PDF (531K)]
2410-2414 : Internal Photoemission over HfO₂ and Hf_(1-x)Si_xO₂ High-k Insulating Barriers: Band Offset and Interfacial Dipole Characterization: Julie Widiez, Koji Kita, Kazuyuki Tomida, Tomonori Nishimura, and Akira Toriumi
Published April 25, 2008
[Abstract] [Full Text PDF (208K)]
2415-2419 : Characteristics of Pure Ge₃N₄ Dielectric Layers Formed by High-Density Plasma Nitridation: Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
Published April 25, 2008
[Abstract] [Full Text PDF (558K)]
2420-2424 : Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors: Kouhei Furumai, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, and Shigeaki Zaima
Published April 25, 2008
[Abstract] [Full Text PDF (1826K)]
2425-2427 : Galvanic Corrosion Suppression of High-k/Metal Gates Using Organic Solvent-Based Hydrogen Fluoride: Daisuke Watanabe, Hidemitsu Aoki, Saori Hotta, Chiharu Kimura, and Takashi Sugino
Published April 25, 2008
[Abstract] [Full Text PDF (121K)]
2428-2432 : Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates: Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Meishoku Masahara, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, and Eiichi Suzuki
Published April 25, 2008
[Abstract] [Full Text PDF (269K)]
2433-2437 : Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics: Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shinich O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Eiichi Suzuki
Published April 25, 2008
[Abstract] [Full Text PDF (688K)]
2438-2441 : Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure: Bo-An Tsai, Yao-Jen Lee, Hsin-Yi Peng, Pei-Jer Tzeng, Chih-wei Luo, and Kuei-Shu Chang-Liao
Published April 25, 2008
[Abstract] [Full Text PDF (276K)]
2442-2445 : Characterizations of Hf_xMo_yN_z Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors: Chao Sung Lai, Hsing Kan Peng, Chin Wei Huang, Kung Ming Fan, Yu Ching Fang, Li Hsu, Hui Chun Wang, Chung Yuan Lee, and Shian Jyh Lin
Published April 25, 2008
[Abstract] [Full Text PDF (186K)]
2446-2451 : Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers: Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, and Kouichi Ono
Published April 25, 2008
[Abstract] [Full Text PDF (237K)]
2452-2455 : Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping: Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, and Kiyoshi Yasutake
Published April 25, 2008
[Abstract] [Full Text PDF (485K)]
2456-2459 : Lithographical Method by Oxidation through a Conductive Template in Contact with a Silicon Substrate Mediated by a Thin Water Layer: Chi-Hsiang Hsieh, Jiunn-Der Liao, Chang-Shu Kuo, Chao-Yu Huang, Bo-Hsiung Wu, and Fuh-Yu Chang
Published April 25, 2008
[Abstract] [Full Text PDF (309K)]
2460-2463 : In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation: Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, and Seiichi Miyazaki
Published April 25, 2008
[Abstract] [Full Text PDF (199K)]

Characterization and Materials Engineering for Interconnect Integration

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2464-2467 : Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond: Akie Yutani, Kazuhito Ichinose, Kazuyoshi Maekawa, Koyu Asai, and Masayuki Kojima
Published April 25, 2008
[Abstract] [Full Text PDF (170K)]
2468-2472 : Impact of Barrier Metal Sputtering on Physical and Chemical Damages in Low-k SiOCH Films with Various Hydrocarbon Content: Naoya Inoue, Naoya Furutake, Fuminori Ito, Hironori Yamamoto, Tsuneo Takeuchi, and Yoshihiro Hayashi
Published April 25, 2008
[Abstract] [Full Text PDF (179K)]
2473-2476 : Fully Analytical Modeling of Cu Interconnects up to 110 GHz: Jun-De Jin, Shawn S. H. Hsu, Tzu-Jin Yeh, Ming-Ta Yang, and Sally Liu
Published April 25, 2008
[Abstract] [Full Text PDF (161K)]
2477-2483 : Extrasmall-Area Three-Dimensional Solenoid-Shaped Inductor Integrated into High-Speed Signal Processing Complementary Metal–Oxide–Semiconductor Ultralarge-Scale Integrated Circuits: Ken-ichiro Hijioka, Akira Tanabe, Yasushi Amamiya, and Yoshihiro Hayashi
Published April 25, 2008
[Abstract] [Full Text PDF (695K)]
2484-2487 : Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects: Takashi Suzuki, Takahiro Kouno, Hideya Matsuyama, and Tomoji Nakamura
Published April 25, 2008
[Abstract] [Full Text PDF (121K)]
2488-2491 : Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier: Tatsunori Murata, Kazushi Kono, Yoshikazu Tsunemine, Masahiko Fujisawa, Masazumi Matsuura, Koyu Asai, and Masayuki Kojima
Published April 25, 2008
[Abstract] [Full Text PDF (180K)]
2492-2495 : Properties of Methyl Boron Nitride Film for Next Generation Low-k Interconnection: Shinji Tokuyama, Makoto Hara, Motaharu Kabir Mazumder, Daisuke Watanabe, Chiharu Kimura, Hidemitsu Aoki, and Takashi Sugino
Published April 25, 2008
[Abstract] [Full Text PDF (195K)]
2496-2500 : Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction: Akio Toda, Hidetatsu Nakamura, Toshinori Fukai, and Nobuyuki Ikarashi
Published April 25, 2008
[Abstract] [Full Text PDF (194K)]
2501-2505 : Characterization of Line-Edge Roughness in Cu/Low-k Interconnect Pattern: Atsuko Yamaguchi, Daisuke Ryuzaki, Ken-ichi Takeda, Jiro Yamamoto, Hiroki Kawada, and Takashi Iizumi
Published April 25, 2008
[Abstract] [Full Text PDF (175K)]
2506-2510 : Nanoscale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence Spectroscopy, Raman Spectroscopy, and Finite Element Method Analyses: Masako Kodera, Tadashi Iguchi, Norihiko Tsuchiya, Mizuki Tamura, Shigeru Kakinuma, Nobuyuki Naka, and Shinsuke Kashiwagi
Published April 25, 2008
[Abstract] [Full Text PDF (166K)]
2511-2514 : Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy: Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Akihiro Takeuchi, Kenta Arima, and Mizuho Morita
Published April 25, 2008
[Abstract] [Full Text PDF (150K)]
2515-2520 : Low-Dielectric-Constant Nonporous Fluorocarbon Films for Interlayer Dielectric: Azumi Itoh, Atsutoshi Inokuchi, Seiji Yasuda, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, and Tadahiro Ohmi
Published April 25, 2008
[Abstract] [Full Text PDF (388K)]
2521-2525 : Low-Temperature Bumpless Bonding for Surface Acoustic Wave Components: Ying-Hui Wang, Takahiro Sato, Tsuyoshi Sugiura, and Tadatomo Suga
Published April 25, 2008
[Abstract] [Full Text PDF (348K)]
2526-2530 : Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation: Chenxi Wang, Eiji Higurashi, and Tadatomo Suga
Published April 25, 2008
[Abstract] [Full Text PDF (385K)]
2531-2534 : Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-k Copper Metallization: Hiraku Ishikawa, Toshihisa Nozawa, Takaaki Matsuoka, Akinobu Teramoto, Masaki Hirayama, Takashi Ito, and Tadahiro Ohmi
Published April 25, 2008
[Abstract] [Full Text PDF (223K)]
2535-2537 : Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal–Insulator–Metal Structure: Jimin Maeng, Sangsub Song, Namcheol Jeon, Chan-Sei Yoo, Heeseok Lee, and Kwangseok Seo
Published April 25, 2008
[Abstract] [Full Text PDF (175K)]
2538-2543 : Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor: Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Atsushi Ogura, Masayuki Kohno, Tatsuo Nishita, and Toshio Nakanishi
Published April 25, 2008
[Abstract] [Full Text PDF (519K)]

CMOS Devices/Device Physics

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2544-2547 : Hole Mobility Characteristics under Electrical Stress for Surface-Channel Germanium Transistors with High-κ Gate Stack: Jeong-Hyong Yi, Saeroonter Oh, and H.-S. Philip Wong
Published April 25, 2008
[Abstract] [Full Text PDF (337K)]
2548-2550 : Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO₂/Ge Gate Stack: Rui Li, Sung-Joo Lee, Ming-Hui Hong, Dong-Zhi Chi, and Dim-Lee Kwong
Published April 25, 2008
[Abstract] [Full Text PDF (239K)]
2551-2555 : Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement: Grace Huiqi Wang, Eng-Huat Toh, Chih-Hang Tung, Sudhinranjan Tripathy, Ganesh S. Samudra, and Yee-Chia Yeo
Published April 25, 2008
[Abstract] [Full Text PDF (368K)]
2556-2559 : Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description: Takahiro Murakami, Makoto Ando, Norio Sadachika, Takaki Yoshida, and Mitiko Miura-Mattausch
Published April 25, 2008
[Abstract] [Full Text PDF (159K)]
2560-2563 : Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization: Masahiro Yokomichi, Norio Sadachika, Masataka Miyake, Takahiro Kajiwara, Hans Juergen Mattausch, and Mitiko Miura-Mattausch
Published April 25, 2008
[Abstract] [Full Text PDF (556K)]
2564-2568 : In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor: Hiroki Okamoto, Akira Hokazono, Kanna Adachi, Nobuaki Yasutake, Hiroshi Itokawa, Shintaro Okamoto, Masaki Kondo, Hideji Tsujii, Tatsuya Ishida, Nobutoshi Aoki, Makoto Fujiwara, Shigeru Kawanaka, Atsushi Azuma, and Yoshiaki Toyoshima
Published April 25, 2008
[Abstract] [Full Text PDF (364K)]
2569-2574 : Stress from Discontinuous SiN Liner for Fully Silicided Gate Process: Tomohiro Yamashita, Yukio Nishida, Takeshi Okagaki, Yoshihiro Miyagawa, Jiro Yugami, Hidekazu Oda, Yasuo Inoue, and Kentaro Shibahara
Published April 25, 2008
[Abstract] [Full Text PDF (270K)]
2575-2579 : Two-Step Inverse Modeling for Estimation of Channel Impurity Pile-up: Toshiharu Nagumo, Kiyoshi Takeuchi, Yutaka Akiyama, and Masami Hane
Published April 25, 2008
[Abstract] [Full Text PDF (235K)]
2580-2584 : Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16 nm Bulk Fin-Type Field Effect Transistors: Yiming Li and Chih-Hong Hwang
Published April 25, 2008
[Abstract] [Full Text PDF (626K)]
2585-2588 : Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode: Takashi Ishigaki, Ryuta Tsuchiya, Yusuke Morita, Nobuyuki Sugii, Shinichiro Kimura, Toshiaki Iwamatsu, Takashi Ipposhi, Yasuo Inoue, and Toshiro Hiramoto
Published April 25, 2008
[Abstract] [Full Text PDF (249K)]
2589-2592 : Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor: Kian-Ming Tan, Tsung-Yang Liow, Rinus T. P. Lee, Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, N. Balasubramanian, Ganesh S. Samudra, and Yee-Chia Yeo
Published April 25, 2008
[Abstract] [Full Text PDF (338K)]
2593-2597 : Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source: Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Dennis Sylvester, Chun-Huat Heng, Ganesh S. Samudra, and Yee-Chia Yeo
Published April 25, 2008
[Abstract] [Full Text PDF (171K)]
2598-2601 : Investigation of the Random Telegraph Noise Instability in Scaled Flash Memory Arrays: Alessandro S. Spinelli, Christian Monzio Compagnoni, Riccardo Gusmeroli, Michele Ghidotti, and Angelo Visconti
Published April 25, 2008
[Abstract] [Full Text PDF (212K)]
2602-2605 : Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device and Its Application to Complementary Metal Oxide Semiconductor Image Sensor Readout Circuit: Hochul Lee, Youngchang Yoon, Jongwook Jeon, and Hyungcheol Shin
Published April 25, 2008
[Abstract] [Full Text PDF (602K)]
2606-2609 : Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-Level Random Telegraph Signal Noise: Seungwon Yang, Hochul Lee, and Hyungcheol Shin
Published April 25, 2008
[Abstract] [Full Text PDF (167K)]
2610-2615 : Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic: Takafumi Minami, Yoichi Takeda, Masataka Miyake, Mitiko Miura-Mattausch, Hance J. Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, and Syunsuke Miyamoto
Published April 25, 2008
[Abstract] [Full Text PDF (485K)]
2616-2620 : Observation of Reliability of HfZrO_X Gate Dielectric Devices with Different Zr/Hf Ratios: Jing-Chyi Liao, Yean-Kuen Fang, Yong Tian Hou, Wei Hsiung Tseng, Chih I. Yang, Peng Fu Hsu, Yuen Shun Chao, Kang Cheng Lin, Kuo Tai Huang, Tzu Liang Lee, and Meng Sung Liang
Published April 25, 2008
[Abstract] [Full Text PDF (151K)]
2621-2623 : Impact of Strain on Ballistic Current in Si n–i–n Structures: Hideki Minari and Nobuya Mori
Published April 25, 2008
[Abstract] [Full Text PDF (311K)]
2624-2627 : Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-Type Metal–Oxide–Semiconductor Field Effect Transistors with Dual Gate Oxide: Ming-Shing Chen, Yean-Kuen Fang, Tung-Hsing Lee, Chien-Ting Lin, Yen-Ting Chiang, Joe Ko, Yau Kae Sheu, Tsong Lin Shen, and Wen Yi Liao
Published April 25, 2008
[Abstract] [Full Text PDF (344K)]
2628-2632 : Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's: In-Shik Han, Hee-Hwan Ji, Tae-Gyu Goo, Ook-Sang Yoo, Won-Ho Choi, Min-Ki Na, Yong-Goo Kim, Sung-Hyung Park, Heui-Seung Lee, Young-Seok Kang, Dae-Byung Kim, and Hi-Deok Lee
Published April 25, 2008
[Abstract] [Full Text PDF (252K)]
2633-2635 : Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses: Mao-Chyuan Tang, Yean-Kuen Fang, Wen-Shiang Liao, David C. Chen, Chune-Sin Yeh, and Shan-Chieh Chien
Published April 25, 2008
[Abstract] [Full Text PDF (134K)]
2636-2640 : On the Characteristics and Spatial Dependence of Channel Thermal Noise in Nanoscale Metal–Oixde–Semiconductor Field Effect Transistors: Jongwook Jeon, Yeonam Yun, Junsoo Kim, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin
Published April 25, 2008
[Abstract] [Full Text PDF (484K)]
2641-2644 : An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors: Kuen-Shiuan Tian, Jone F. Chen, Shiang-Yu Chen, Kuo-Ming Wu, J. R. Lee, Tsung-Yi Huang, C. M. Liu, and S. L. Hsu
Published April 25, 2008
[Abstract] [Full Text PDF (160K)]
2645-2649 : Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors: Shiang-Yu Chen, Jone F. Chen, Kuo-Ming Wu, J. R. Lee, C. M. Liu, and S. L. Hsu
Published April 25, 2008
[Abstract] [Full Text PDF (314K)]
2650-2655 : Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors: Hsin-Hui Hu, Kun-Ming Chen, Guo-Wei Huang, Alex Chien, Eric Cheng, Yu-Chi Yang, and Chun-Yen Chang
Published April 25, 2008
[Abstract] [Full Text PDF (462K)]
2656-2659 : Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors: Jungwoo Oh, Prashant Majhi, Hi-Deok Lee, Sanjay Banerjee, Rusty Harris, Hsing-Huang Tseng, and Raj Jammy
Published April 25, 2008
[Abstract] [Full Text PDF (249K)]
2660-2663 : Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect: Lang Zeng, Xiao-Yan Liu, Gang Du, Jin-Feng Kang, and Ru-Qi Han
Published April 25, 2008
[Abstract] [Full Text PDF (624K)]
2664-2667 : Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Ting-Kuo Kang, Po-Chin Huang, Yu-Huan Sa, San-Lein Wu, and Shoou-Jinn Chang
Published April 25, 2008
[Abstract] [Full Text PDF (183K)]
2668-2671 : Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors: Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 25, 2008
[Abstract] [Full Text PDF (209K)]

Advanced Memory Technology

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2672-2675 : Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories: Makoto Yoshida, Jae-Rok Kahng, Joon-Seok Moon, Kyoung-Ho Jung, Keunnam Kim, Hyunju Sung, Chul Lee, Chang-Kyu Kim, Wouns Yang, and Donggun Park
Published April 25, 2008
[Abstract] [Full Text PDF (192K)]
2676-2679 : Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories: Daewoong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Dongwon Chang, Hyukje Kwon, Wonseong Lee, Il-Han Park, Jun Su Kim, Jae Hong Lee, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin
Published April 25, 2008
[Abstract] [Full Text PDF (417K)]
2680-2683 : Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots: Yan-Li Pei, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
Published April 25, 2008
[Abstract] [Full Text PDF (378K)]
2684-2686 : Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide–Nitride–Oxide Sidewall 2-bit/Cell Nonvolatile Memories (Communication): Atsushi Toki, Noriaki Shinohara, Yoshiaki Kamigaki, Masayuki Nakano, Akihide Shibata, Tetsuya Okumine, Takeshi Shiomi, Kazuo Sugimoto, Tetsu Negishi, Fumiyoshi Yoshioka, and Hiroshi Kotaki
Published April 25, 2008
[Abstract] [Full Text PDF (293K)]
2687-2691 : Two-Bit/Cell Characteristics of Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Devices with Recessed Channel Structure: Kyoung-Rok Han and Jong-Ho Lee
Published April 25, 2008
[Abstract] [Full Text PDF (393K)]
2692-2695 : New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure: Won-Ho Choi, Sung-Soo Park, In-Shik Han, Min-Ki Na, Jae-Chul Om, Seaung-Suk Lee, Gi-Hyun Bae, Hi-Deok Lee, and Ga-Won Lee
Published April 25, 2008
[Abstract] [Full Text PDF (146K)]
2696-2700 : A Comprehensive Parameterized Model of Phase-Change Memory Cell for HSPICE Circuit Simulation: Der-Sheng Chao, Chenhsin Lien, Yan-Kai Chen, Yi-Bo Liao, Meng-Hsueh Chiang, Ming-Jer Kao, and Ming-Jinn Tsai
Published April 25, 2008
[Abstract] [Full Text PDF (299K)]
2701-2703 : Gd Doping Improved Resistive Switching Characteristics of TiO₂-Based Resistive Memory Devices: Li-Feng Liu, Jin-Feng Kang, Nuo Xu, Xiao Sun, Chen Chen, Bing Sun, Yi Wang, Xiao-Yan Liu, Xing Zhang, and Ru-Qi Han
Published April 25, 2008
[Abstract] [Full Text PDF (126K)]
2704-2709 : Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices: Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Yong-Soo Kim, Yun Taek Hwang, Se Aug Jang, Hong-Seon Yang, Ja Chun Ku, and Jin Woong Kim
Published April 25, 2008
[Abstract] [Full Text PDF (197K)]
2710-2713 : Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory: K. R. Udayakumar, T. S. Moise, S. R. Summerfelt, K. Boku, K. Remack, J. Rodriguez, M. Arendt, G. Shinn, J. Eliason, R. Bailey, and P. Staubs
Published April 25, 2008
[Abstract] [Full Text PDF (163K)]
2714-2718 : Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition: Katsumi Suemitsu, Yuichi Kawano, Hiroaki Utsumi, Hiroaki Honjo, Ryusuke Nebashi, Shinsaku Saito, Norikazu Ohshima, Tadahiko Sugibayashi, Hiromitsu Hada, Tatsuhiko Nohisa, Tadashi Shimazu, Masahiko Inoue, and Naoki Kasai
Published April 25, 2008
[Abstract] [Full Text PDF (376K)]
2719-2724 : Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology: Yoshihisa Kato, Yukihiro Kaneko, Hiroyuki Tanaka, and Yasuhiro Shimada
Published April 25, 2008
[Abstract] [Full Text PDF (238K)]
2725-2727 : A Characterization of Endurance in 64 Mbit Ferroelectric Random Access Memory by Analyzing the Space Charge Concentration: Eun Sun Lee, Dong Jin Jung, Young Min Kang, Hyun Ho Kim, Young Ki Hong, Jung Hoon Park, Seung Kuk Kang, Jae Hyun Kim, Hee San Kim, Won Woong Jung, Woo Song Ahn, Ju Young Jung, Jin Young Kang, Do Yeon Choi, Han Kyung Goh, Song Yi Kim, Sang Young Lee, and Hong Sik Jeong
Published April 25, 2008
[Abstract] [Full Text PDF (338K)]
2728-2732 : Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications: Hyun-Mo Koo, Won-Ju Cho, Dong Uk Lee, Seon Pil Kim, Eun Kyu Kim, and Jongwan Jung
Published April 25, 2008
[Abstract] [Full Text PDF (606K)]
2733-2735 : The Impact of Random Telegraph Signals on the Threshold Voltage Variation of 65 nm Multilevel NOR Flash Memory: Yimao Cai, Yun Heub Song, Wook-Hyun Kwon, Bong Yong Lee, and Chan-Kwang Park
Published April 25, 2008
[Abstract] [Full Text PDF (111K)]

Advanced Circuits and Systems

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2736-2741 : Soft Error Hardened Latch and Its Estimation Method: Taiki Uemura, Ryo Tanabe, Yoshiharu Tosaka, and Shigeo Satoh
Published April 25, 2008
[Abstract] [Full Text PDF (216K)]
2742-2745 : Evaluation of Digital Crosstalk Noise on Differential Input Voltage Controlled Oscillator: Akihiro Toya, Yoshitaka Murasaka, Takafumi Ohmoto, and Atsushi Iwata
Published April 25, 2008
[Abstract] [Full Text PDF (157K)]
2746-2748 : Principal Component Analysis-Based Object Detection/Recognition Chip for Wireless Interconnected Three-Dimensional Integration: Hiroshi Ando, Seiji Kameda, Daisuke Arizono, Norimitsu Fuchigami, Kouta Kaya, Mamoru Sasaki, and Atushi Iwata
Published April 25, 2008
[Abstract] [Full Text PDF (500K)]
2749-2751 : Capacitor-Shunted Transmitter for Power Reduction in Inductive-Coupling Clock Link: Amit Kumar, Noriyuki Miura, and Tadahiro Kuroda
Published April 25, 2008
[Abstract] [Full Text PDF (281K)]
2752-2755 : A Fully Integrated SiGe Optical Receiver Using Differential Active Miller Capacitor for 4.25 Gbit/s Fiber Channel Application: Ji-Chen Huang, Kuang-Sheng Lai, and Klaus Y.-J. Hsu
Published April 25, 2008
[Abstract] [Full Text PDF (313K)]
2756-2760 : Real-Time Variable-Resolution Complementary Metal–Oxide–Semiconductor Field-Effect Transistors Image Sensor: Chih-Yang Chen, Jian-Jie Wang, Chrong-Jung Lin, and Ya-Chin King
Published April 25, 2008
[Abstract] [Full Text PDF (320K)]
2761-2766 : High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression: Satoru Adachi, Woonghee Lee, Nana Akahane, Hiromichi Oshikubo, Koichi Mizobuchi, and Shigetoshi Sugawa
Published April 25, 2008
[Abstract] [Full Text PDF (602K)]
2767-2773 : Moving-Object-Localization Hardware Algorithm Employing OR-Amplification of Pixel Activities: Yusuke Niki, Yasuo Manzawa, Satoshi Kametani, and Tadashi Shibata
Published April 25, 2008
[Abstract] [Full Text PDF (314K)]
2774-2778 : New Reconfigurable Memory Architecture for Parallel Image-Processing LSI with Three-Dimensional Structure: Shigeo Kodama, Daijirou Amano, Takeaki Sugimura, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
Published April 25, 2008
[Abstract] [Full Text PDF (925K)]
2779-2787 : Delay-Compensation Flip-Flop with In-situ Error Monitoring for Low-Power and Timing-Error-Tolerant Circuit Design: Kenichiro Hirose, Yasuo Manzawa, Masahiro Goshima, and Shuichi Sakai
Published April 25, 2008
[Abstract] [Full Text PDF (466K)]
2788-2796 : Compact Bell-Shaped Analog Matching-Cell Module for Digital-Memory-Based Associative Processors: Trong Tu Bui and Tadashi Shibata
Published April 25, 2008
[Abstract] [Full Text PDF (459K)]
2797-2800 : Chip-to-Chip Power Delivery by Inductive Coupling with Ripple Canceling Scheme: Yuxiang Yuan, Yoichi Yoshida, Nobuhiko Yamagishi, and Tadahiro Kuroda
Published April 25, 2008
[Abstract] [Full Text PDF (330K)]
2801-2806 : Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs: Hirokazu Kikuchi, Yusuke Yamada, Atif Mossad Ali, Jun Liang, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
Published April 25, 2008
[Abstract] [Full Text PDF (699K)]
2807-2811 : Compact and Power-Efficient Implementation of Rank-Order Filters Using Time-Domain Digital Computation Technique: Liem T. Nguyen, Kiyoto Ito, and Tadashi Shibata
Published April 25, 2008
[Abstract] [Full Text PDF (153K)]
2812-2816 : New On-Chip De-Embedding for Accurate Evaluation of Symmetric Devices: Yosuke Goto, Youhei Natsukari, and Minoru Fujishima
Published April 25, 2008
[Abstract] [Full Text PDF (348K)]

Compound Semiconductor Circuits, Electron Devices and Device Physics

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2817-2819 : p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors: Mitsuaki Shimizu, Guaxi Piao, Masaki Inada, Syuichi Yagi, Yoshiki Yano, and Nakao Akutsu
Published April 25, 2008
[Abstract] [Full Text PDF (133K)]
2820-2823 : Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture: Ruonan Wang, Yichao Wu, and Kevin J. Chen
Published April 25, 2008
[Abstract] [Full Text PDF (193K)]
2824-2827 : Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer: Hwa-Chul Lee, Sun-Young Hyun, Hyun-Ick Cho, Clemens Ostermaier, Ki-Won Kim, Sang-Il Ahn, Kyoung-Il Na, Jong-Bong Ha, Dae-Hyuk Kwon, Cheol-Koo Hahn, Sung-Ho Hahm, Hyun-Chul Choi, and Jung-Hee Lee
Published April 25, 2008
[Abstract] [Full Text PDF (636K)]
2828-2832 : High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy: Hiroki Sugiyama, Toshihiko Kosugi, Haruki Yokoyama, Koichi Murata, Yasuro Yamane, Masami Tokumitsu, and Takatomo Enoki
Published April 25, 2008
[Abstract] [Full Text PDF (308K)]
2833-2837 : Ultrashort Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates: Naoki Kamegai, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani, Hiroya Andoh, Kazuhiro Akamatsu, and Hirofumi Nakata
Published April 25, 2008
[Abstract] [Full Text PDF (718K)]
2838-2840 : High-Temperature Characteristics of Al_xGa_1-xN-Based Vertical Conducting Diodes: Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, and Toshiki Makimoto
Published April 25, 2008
[Abstract] [Full Text PDF (468K)]
2841-2844 : Shuttle Activation Annealing of Implanted Al in 4H-SiC: Tomokatsu Watanabe, Ryo Hattori, Masayuki Imaizumi, and Tatsuo Oomori
Published April 25, 2008
[Abstract] [Full Text PDF (194K)]
2845-2847 : Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors: Shigehiko Sasa, Takeo Hayafuji, Motoki Kawasaki, Kazuto Koike, Mitsuaki Yano, and Masataka Inoue
Published April 25, 2008
[Abstract] [Full Text PDF (258K)]
2848-2853 : Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors: Kariyadan Remashan, Dae-Kue Hwang, Seong-Ju Park, and Jae-Hyung Jang
Published April 25, 2008
[Abstract] [Full Text PDF (321K)]
2854-2857 : Noninverted/Inverted Monostabel-to-Bistable Transition Logic Element Circuits Using Three Resonant Tunneling Diodes and Their Application to a Static Binary Frequency Divider: Hyungtae Kim and Kwangseok Seo
Published April 25, 2008
[Abstract] [Full Text PDF (247K)]
2858-2861 : Dependence of Carrier Lifetime of InAlAs/InGaAs High-Electron-Mobility Transistors on Gate-to-Source Voltage: Hirohisa Taguchi, Takuro Sato, Masashi Oura, Tsutomu Iida, and Yoshifumi Takanashi
Published April 25, 2008
[Abstract] [Full Text PDF (162K)]
2862-2864 : On the Hydrogen Sensing Behaviors of an InAlAs-Based Schottky Diode with a Thin Pt Catalytic Metal: Chih-Hung Yen, Ching-Wen Hung, Huey-Ing Chen, Tsung-Han Tsai, Tzu-Pin Chen, Li-Yang Chen, Kuei-Yi Chu, and Wen-Chau Liu
Published April 25, 2008
[Abstract] [Full Text PDF (129K)]
2865-2867 : Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN: Motoi Nagamori, Shuichi Ito, Hiroshi Saito, Kenji Shiojima, Shuhei Yamada, Naoki Shibata, and Masaaki Kuzuhara
Published April 25, 2008
[Abstract] [Full Text PDF (91K)]
2868-2871 : High Performance 50 nm InAlAs/In_0.75GaAs Metamorphic High Electron Mobility Transistors with Si₃N₄ Passivation on Thin InGaAs Layer: Seongjin Yeon and Kwangseok Seo
Published April 25, 2008
[Abstract] [Full Text PDF (533K)]
2872-2876 : Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors: Cheng-Chou Hung, Wen-Shiang Liao, Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang, and Chen-Hsin Lien
Published April 25, 2008
[Abstract] [Full Text PDF (219K)]
2877-2879 : High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology (Communication): Hyungtae Kim, Seongjin Yeon, and Kwangseok Seo
Published April 25, 2008
[Abstract] [Full Text PDF (243K)]

Photonic Devices and Device Physics

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2880-2883 : First Demonstration of Electrically Driven 1.55 µm Single-Photon Generator: Toshiyuki Miyazawa, Shigekazu Okumura, Shinnichi Hirose, Kazuya Takemoto, Motomu Takatsu, Tatsuya Usuki, Naoki Yokoyama, and Yasuhiko Arakawa
Published April 25, 2008
[Abstract] [Full Text PDF (153K)]
2884-2887 : Electric-Field Control of Coupled States in Weakly Coupled Quantum Dots: Isao Morohashi, Kazuhiro Komori, Shohgo Yamauchi, Keishiro Goshima, Amane Shikanai, and Takeyoshi Sugaya
Published April 25, 2008
[Abstract] [Full Text PDF (369K)]
2888-2892 : Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers: Kenichi Kawaguchi, Nami Yasuoka, Mitsuru Ekawa, Hiroji Ebe, Tomoyuki Akiyama, Mitsuru Sugawara, and Yasuhiko Arakawa
Published April 25, 2008
[Abstract] [Full Text PDF (255K)]
2893-2896 : Optical-Nonlinearity-Induced Phase Shift via Selective-Area Grown InAs Quantum Dots in a Photonic Crystal Waveguide: Yoshinori Kitagawa, Nobuhiko Ozaki, Yoshiaki Takata, Naoki Ikeda, Shunsuke Ohkouchi, Yoshinori Watanabe, Yoshimasa Sugimoto, and Kiyoshi Asakawa
Published April 25, 2008
[Abstract] [Full Text PDF (1120K)]
2897-2901 : Imprint Property of Optical Mach–Zehnder Interferometers Using (Ba,Sr)TiO₃ Sputter-Deposited at 450 °C: Masato Suzuki, Kazuma Nagata, and Shin Yokoyama
Published April 25, 2008
[Abstract] [Full Text PDF (239K)]
2902-2905 : Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device: Bernard Gelloz, Masataka Sato, and Nobuyoshi Koshida
Published April 25, 2008
[Abstract] [Full Text PDF (205K)]
2906-2909 : Proposal of a Metal–Oxide–Semiconductor Silicon Optical Modulator Based on Inversion-Carrier Absorption: Tomoki Hirata, Kenta Kajikawa, Tetsuo Tabei, and Hideo Sunami
Published April 25, 2008
[Abstract] [Full Text PDF (234K)]
2910-2914 : Photoelastic Effect in Silicon Ring Resonators: Yoshiteru Amemiya, Yuichiro Tanushi, Tomohiro Tokunaga, and Shin Yokoyama
Published April 25, 2008
[Abstract] [Full Text PDF (440K)]
2915-2920 : Magneto-Optic Effect in Amorphous Bi₃Fe₅O₁₂ Waveguides Sputtered at Room Temperature: Hiroshi Taura, Yohei Shishido, Yuichiro Tanushi, Tomohiro Tokunaga, Takahiro Onimaru, and Shin Yokoyama
Published April 25, 2008
[Abstract] [Full Text PDF (334K)]
2921-2923 : Numerical Study of Near-Infrared Photodetectors with Surface-Plasmon Antenna for Optical Communication: Daisuke Okamoto, Junichi Fujikata, Kenichi Nishi, and Keishi Ohashi
Published April 25, 2008
[Abstract] [Full Text PDF (230K)]
2924-2926 : In(Ga)As Quantum Rings for Terahertz Detectors: Jong-Horng Dai, Jheng-Han Lee, Yi-Lung Lin, and Si-Chen Lee
Published April 25, 2008
[Abstract] [Full Text PDF (193K)]
2927-2931 : Functional Enhancement of Metal–Semiconductor–Metal Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method: Ricky W. Chuang, Zhen-Liang Liao, Huai-Tzu Chiang, and Noritaka Usami
Published April 25, 2008
[Abstract] [Full Text PDF (380K)]
2932-2935 : Saturation Characteristics Simulation of Intersubband Absorption for [(CdS/ZnSe/BeTe)/(ZnSe/BeTe)] Coupled Quantum Wells: Guangwei Cong, Ryoichi Akimoto, Kazumichi Akita, Toshifumi Hasama, and Hiroshi Ishikawa
Published April 25, 2008
[Abstract] [Full Text PDF (298K)]
2936-2940 : Low-Loss Optical Interposer with Recessed Vertical-Cavity Surface-Emitting Laser Diode and Photodiode Chips into Si Substrate: Makoto Fujiwara, Shinsuke Terada, Yoji Shirato, Hiroshi Owari, Kei Watanabe, Mutsuhiro Matsuyama, Keizo Takahama, Tetsuya Mori, Kenji Miyao, Koji Choki, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
Published April 25, 2008
[Abstract] [Full Text PDF (811K)]
2941-2944 : Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN: Sachie Fujikawa, Takayoshi Takano, Yukihiro Kondo, and Hideki Hirayama
Published April 25, 2008
[Abstract] [Full Text PDF (193K)]
2945-2949 : Silicon Electro-Optic Modulator Fabricated on Silicon Substrate Utilizing the Three-Terminal Transistor Waveguide Structure: Ricky W. Chuang, Zhen-Liang Liao, Mao-Teng Hsu, Jia-Ching Liao, and Chih-Chieh Cheng
Published April 25, 2008
[Abstract] [Full Text PDF (172K)]
2950-2953 : Aluminum Packaging for Light-Emitting Diode using Selectively Anodizing Method: Kyoung-Min Kim, Young Ki Lee, Sang-Hyun Shin, Seog Moon Choi, and Young Se Kwon
Published April 25, 2008
[Abstract] [Full Text PDF (301K)]
2954-2956 : Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids: Ching-Hua Chiu, Chia-En Lee, Ming-Hua Lo, Hung-Wen Huang, Tien-Chang Lu, Hao-Chung Kuo, and Shing Chung Wang
Published April 25, 2008
[Abstract] [Full Text PDF (271K)]
2957-2960 : Fabrication of AlGaInP Circular Ring Laser Resonators by Excimer-Laser-Assisted Etching at Cryogenic Temperature: Ming Chang Shih and Shih Chang Wang
Published April 25, 2008
[Abstract] [Full Text PDF (238K)]
2961-2964 : Red Emission from ZnO-Based Double Heterojunction Diode: Toshiya Ohashi, Kenji Yamamoto, Atsushi Nakamura, and Jiro Temmyo
Published April 25, 2008
[Abstract] [Full Text PDF (157K)]
2965-2967 : A Quantum Dot Swept Laser Source Based upon a Multisection Laser Device: Benjamin J. Stevens, David T. D. Childs, Kristian M. Groom, Mark Hopkinson, and Richard A. Hogg
Published April 25, 2008
[Abstract] [Full Text PDF (129K)]
2968-2971 : A High Performance Photodetector Suitable for Visible Light and Near Infrared Applications: Kuang-Sheng Lai, Ji-Chen Huang, and Klaus Y.-J. Hsu
Published April 25, 2008
[Abstract] [Full Text PDF (200K)]
2972-2976 : Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays: Hsiang-Yu Lo, Yiming Li, Chih-Hao Tsai, and Fu-Ming Pan
Published April 25, 2008
[Abstract] [Full Text PDF (272K)]
2977-2981 : Ion Beam Deposition of Quantum Dots from Colloidal Solution: Yuki Tani, Satoshi Kobayashi, and Hiroshi Kawazoe
Published April 25, 2008
[Abstract] [Full Text PDF (183K)]
2982-2986 : GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure: Yung-Feng Chen, Wei-Cheng Chen, Ricky W. Chuang, Yan-Kuin Su, and Huo-Lieh Tsai
Published April 25, 2008
[Abstract] [Full Text PDF (143K)]

Advanced Material Synthesis and Crystal Growth Technology

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2987-2990 : In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers: Shunsuke Ohkouchi, Nobuhiko Ozaki, Yoshiaki Takata, Yoshinori Kitagawa, Yusui Nakamura, Naoki Ikeda, Yoshimasa Sugimoto, and Kiyoshi Asakawa
Published April 25, 2008
[Abstract] [Full Text PDF (131K)]
2991-2993 : Optimization of Well Width and N Content for Optical Properties of GaNAs/GaAs Multiple Quantum Well Grown by RF-Molecular Beam Epitaxy (Communication): Kensuke Fujii, Daisuke Nakase, Noriaki Tsurumachi, Hayato Miyagawa, Hiroshi Itoh, Shunsuke Nakanishi, Hidefumi Akiyama, and Shyun Koshiba
Published April 25, 2008
[Abstract] [Full Text PDF (127K)]
2994-2998 : Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma: Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki, Masaki Hirayama, Akinobu Teramoto, and Tadahiro Ohmi
Published April 25, 2008
[Abstract] [Full Text PDF (163K)]
2999-3006 : Theoretical Study on Electronic and Electrical Properties of Nanostructural ZnO: Zhigang Zhu, Arunabhiram Chutia, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 25, 2008
[Abstract] [Full Text PDF (524K)]
3007-3009 : Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots: Atsushi Nakamura, Kota Okamatsu, Takehiko Tawara, Hideki Gotoh, Jiro Temmyo, and Yoshio Matsui
Published April 25, 2008
[Abstract] [Full Text PDF (288K)]
3010-3014 : Development of Multiscale Simulator for Dye-Sensitized TiO₂ Nanoporous Electrode Based on Quantum Chemical Calculation: Kei Ogiya, Chen Lv, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 25, 2008
[Abstract] [Full Text PDF (237K)]
3015-3019 : Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology: Grace Huiqi Wang, Eng-Huat Toh, Xincai Wang, Keat-Mun Hoe, Sudhinranjan Tripathy, Ganesh S. Samudra, and Yee-Chia Yeo
Published April 25, 2008
[Abstract] [Full Text PDF (425K)]
3020-3023 : Strain-Relaxed Si_1-xGe_x and Strained Si Grown by Sputter Epitaxy: Hiroaki Hanafusa, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
Published April 25, 2008
[Abstract] [Full Text PDF (136K)]
3024-3027 : High-Performance Solid-Phase Crystallized Polycrystalline Silicon Thin-Film Transistors with Floating-Channel Structure: Chia-Wen Chang, Chih-Kang Deng, Che-Lun Chang, Ta-Chuan Liao, and Tan-Fu Lei
Published April 25, 2008
[Abstract] [Full Text PDF (245K)]
3028-3031 : High-Density and Very Small-Size a Ge_1-xC_x Nanocrystal Assemblies on a Si(100) Substrate Fabricated Using Bionanoprocess with Proteins “Ferritin” and Solid Source Molecular Beam Epitaxy: Yuji Nakama, Jun Ohta, and Masahiro Nunoshita
Published April 25, 2008
[Abstract] [Full Text PDF (445K)]
3032-3035 : Effect of Surface Termination on Superlow Friction of Diamond Film: A Theoretical Study: Yusuke Morita, Toshiaki Shibata, Tasuku Onodera, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 25, 2008
[Abstract] [Full Text PDF (181K)]
3036-3040 : Oriented Growth of Location-Controlled Si Crystal Grains by Ni Nano-Imprint and Excimer Laser Annealing: Gou Nakagawa and Tanemasa Asano
Published April 25, 2008
[Abstract] [Full Text PDF (286K)]
3041-3045 : Development of Surface Hall Potentiometry to Reveal the Variation of Drift Velocity of Carriers in Semiconductor Materials: Kenta Arima, Yuji Hidaka, Kenji Hiwa, Junichi Uchikoshi, and Mizuho Morita
Published April 25, 2008
[Abstract] [Full Text PDF (193K)]
3046-3049 : Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain: Shuntaro Fujii, Shin-Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, and Takashi Ito
Published April 25, 2008
[Abstract] [Full Text PDF (440K)]
3050-3052 : Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition: Masataka Moriya, Yuji Matsumoto, Yoshinao Mizugaki, Tadayuki Kobayashi, and Kouichi Usami
Published April 25, 2008
[Abstract] [Full Text PDF (221K)]
3053-3055 : Fabrication and Characterization of In_xGa_1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique: Dong-Hun Kang, Dong-Wook Kim, Seon-Ho Lee, Seung-Jae Lee, Jin-Soo Kim, Santhakumar Kannappan, Young-Ki Lee, and Cheul-Ro Lee
Published April 25, 2008
[Abstract] [Full Text PDF (285K)]
3056-3062 : Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature: Day-Shan Liu, Fu-Chun Tsai, Ching-Ting Lee, and Cheng-Wei Sheu
Published April 25, 2008
[Abstract] [Full Text PDF (339K)]
3063-3066 : Fabrication of Densely Packed Gold Nanoparticle Films and Their Fluorescence Enhancement Effect: Tsuyoshi Akiyama, Tomoaki Kawahara, Taichi Arakawa, and Sunao Yamada
Published April 25, 2008
[Abstract] [Full Text PDF (254K)]
3067-3069 : Vanadium Dioxide Films Deposited on Amorphous SiO₂- and Al₂O₃-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition (Communication): Sun Jin Yun, Jung Wook Lim, Jong-Su Noh, Byung-Gyu Chae, and Hyun-Tak Kim
Published April 25, 2008
[Abstract] [Full Text PDF (254K)]
3070-3073 : Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate: Seung-Jae Lee, Gyu Hyeong Bak, Seong-Ran Jeon, Sang Hern Lee, Sang-Mook Kim, Sung Hoon Jung, Cheul-Ro Lee, In-Hwan Lee, Shi-Jong Leem, and Jong Hyeob Baek
Published April 25, 2008
[Abstract] [Full Text PDF (467K)]
3074-3076 : Metalorganic Vapor Phase Epitaxy Growth of m-Plane GaN Using LiAlO₂ Substrates: An-Ting Cheng, Yan-Kuin Su, Wei-Chih Lai, and Ying-Zhi Chen
Published April 25, 2008
[Abstract] [Full Text PDF (247K)]

Physics and Applications of Novel Functional Materials and Devices

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3077-3080 : Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process: Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Ganesh S. Samudra, and Yee-Chia Yeo
Published April 25, 2008
[Abstract] [Full Text PDF (213K)]
3081-3085 : Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors: Xiaoli Zhu, Shin-Ichiro Kuroki, Koji Kotani, Masatoshi Fukuda, Hideharu Shido, Yasuyoshi Mishima, and Takashi Ito
Published April 25, 2008
[Abstract] [Full Text PDF (181K)]
3086-3090 : Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors: Yuta Shiratori and Seiya Kasai
Published April 25, 2008
[Abstract] [Full Text PDF (206K)]
3091-3094 : A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-k and Metal Gate on Si: Soon-Young Oh, Chang-Geun Ahn, Jong-Heon Yang, Won-Ju Cho, and Moon-Gyu Jang
Published April 25, 2008
[Abstract] [Full Text PDF (342K)]
3095-3098 : Improved Photoconduction Effects of Nanometer-Sized Silicon Dot Multilayers: Yoshiyuki Hirano, Susumu Yamazaki, and Nobuyoshi Koshida
Published April 25, 2008
[Abstract] [Full Text PDF (221K)]
3099-3102 : Self-Assembling Formation of Ni Nanodots on SiO₂ Induced by Remote H₂ Plasma Treatment and Their Electrical Charging Characteristics: Katsunori Makihara, Kazuhiro Shimanoe, Mitsuhisa Ikeda, Seiichiro Higashi, and Seiichi Miyazaki
Published April 25, 2008
[Abstract] [Full Text PDF (267K)]
3103-3106 : Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases: Ryuji Matsumoto, Mitsuhisa Ikeda, Seiichiro Higashi, and Seiichi Miyazaki
Published April 25, 2008
[Abstract] [Full Text PDF (343K)]
3107-3110 : Spin-Conserved Single-Electron Transport between Zeeman Sublevels in a Few-Electron Quantum Dot: Toshimasa Fujisawa, Gou Shinkai, and Toshiaki Hayashi
Published April 25, 2008
[Abstract] [Full Text PDF (289K)]
3111-3114 : Optical Control of 2-Qubit Exciton States in a Coupled Quantum Dot: Keishiro Goshima, Kazuhiro Komori, and Takeyoshi Sugaya
Published April 25, 2008
[Abstract] [Full Text PDF (185K)]
3115-3117 : Coherence Time of Nuclear Spins in GaAs Quantum Well Probed by Submicron-Scale All-Electrical Nuclear Magnetic Resonance Device: Takeshi Ota, Norio Kumada, Go Yusa, Sen Miyashita, Toshimasa Fujisawa, and Yoshiro Hirayama
Published April 25, 2008
[Abstract] [Full Text PDF (109K)]
3118-3122 : Self-Aligned Dual-Gate Single-Electron Transistors: Sangwoo Kang, Dae-Hwan Kim, Il-Han Park, Jin-Ho Kim, Joung-Eob Lee, Jong Duk Lee, and Byung-Gook Park
Published April 25, 2008
[Abstract] [Full Text PDF (280K)]
3123-3126 : Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters: Bernard Gelloz, Masahito Sugawara, and Nobuyoshi Koshida
Published April 25, 2008
[Abstract] [Full Text PDF (625K)]
3127-3129 : Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining: Wen-Shiang Liao, Sheng-Yi Huang, Mao-Chyuan Tang, Yue-Gie Liaw, Kun-Ming Chen, Tommy Shih, Huan-Chiu Tsen, Lee Chung, and Chee Wee Liu
Published April 25, 2008
[Abstract] [Full Text PDF (148K)]
3130-3133 : Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars: Shang-En Wu, Tao-Hung Hsueh, Chuan-Pu Liu, Jinn-Kong Sheu, Wei-Chih Lai, and Shoou-Jinn Chang
Published April 25, 2008
[Abstract] [Full Text PDF (286K)]
3134-3137 : Development of A Seebeck Coefficient Prediction Simulator Using Tight-Binding Quantum Chemical Molecular Dynamics: Hideyuki Tsuboi, Kei Ogiya, Arunabhiram Chutia, Zhigang Zhu, Chen Lv, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 25, 2008
[Abstract] [Full Text PDF (120K)]
3138-3141 : Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon: Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 25, 2008
[Abstract] [Full Text PDF (203K)]

Organic Materials Science, Device Physics, and Applications

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3142-3146 : Orientational Reordering of Liquid Crystalline Monolayers by Cooperative Molecular Field Effect: Dai Taguchi, Norifumi Kajimoto, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 25, 2008
[Abstract] [Full Text PDF (142K)]
3147-3151 : Influence of Organic Functional Groups on the Electrical Properties of Carbon Black: A Theoretical Study: Arunabhiram Chutia, Zhigang Zhu, Riadh Sahnoun, Hideyuki Tsuboi, Michihisa Koyama, Nozomu Hatekeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, and Akira Miyamoto
Published April 25, 2008
[Abstract] [Full Text PDF (327K)]
3152-3155 : Polymer Light-Emitting Diodes Fabricated Using Poly(9,9-dioctylfuorene) Gel by Thermal Printing Method: Hirotake Kajii, Daisuke Kasama, and Yutaka Ohmori
Published April 25, 2008
[Abstract] [Full Text PDF (172K)]
3156-3161 : Interface Control by Surface-Initiated Deposition Polymerization and Its Application to Organic Light-Emitting Devices: Akira Kawakami, Kiyoi Katsuki, Rigoberto C. Advincula, Kuniaki Tanaka, Kenji Ogino, and Hiroaki Usui
Published April 25, 2008
[Abstract] [Full Text PDF (274K)]
3162-3166 : Utilizing Transparent ZnO Thin Film as Permeation Barrier to Improve Light Outcoupling and Longevity of Top-Emission Polymer Light-Emitting Devices: Kou-Chen Liu, Yen-Hsun Lu, Yung-Hsin Liao, and Bor-shiun Huang
Published April 25, 2008
[Abstract] [Full Text PDF (1079K)]
3167-3169 : Frequency Dependences of Displacement Current and Channel Current in Pentacene Thin-Film Transistors: Seiichi Suzuki, Yuhsuke Yasutake, and Yutaka Majima
Published April 25, 2008
[Abstract] [Full Text PDF (156K)]
3170-3173 : Analysis of Charge Accumulation in Pentacene Feld Effect Transistor with Ferroelectric Gate Insulator using Maxwell–Wagner Model: Ryousuke Tamura, Shuhei Yoshita, Eunju Lim, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 25, 2008
[Abstract] [Full Text PDF (142K)]
3174-3178 : An Analytic Current–Voltage Equation for Top-Contact Organic Thin Film Transistors Including the Effects of Variable Series Resistance: Keum-Dong Jung, Yoo Chul Kim, Byeong-Ju Kim, Byung-Gook Park, Hyungcheol Shin, and Jong Duk Lee
Published April 25, 2008
[Abstract] [Full Text PDF (196K)]
3179-3184 : Probing of Channel Formation in Organic Field-Effect Transistors by Optical Second Harmonic Generation Measurement: Eunju Lim, Hosik Lee, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 25, 2008
[Abstract] [Full Text PDF (313K)]
3185-3188 : Poly(methyl methacrylate) Dielectric Material Applied in Organic Thin Film Transistors: Tsung-Syun Huang, Yan-Kuin Su, and Po-Cheng Wang
Published April 25, 2008
[Abstract] [Full Text PDF (249K)]
3189-3192 : Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation: Chang Bum Park, Takamichi Yokoyama, Tomonori Nishimura, Koji Kita, and Akira Toriumi
Published April 25, 2008
[Abstract] [Full Text PDF (243K)]
3193-3195 : Enhancing Efficiency of Organic Light-Emitting Diodes Using Lithium-Doped Electron Transport Layer: Shui-Hsiang Su, Cheng-Chieh Hou, Ruei-Shiang Shieh, and Meiso Yokoyama
Published April 25, 2008
[Abstract] [Full Text PDF (162K)]
3196-3199 : Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors with Silsesquioxane Gate Insulators: Kenji Tomatsu, Takashi Hamada, Takashi Nagase, Saori Yamazaki, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, and Hiroyoshi Naito
Published April 25, 2008
[Abstract] [Full Text PDF (133K)]
3200-3203 : Observation of Carrier Behavior in Organic Field-Effect Transistors with Electroluminescence under AC Electric Field: Yuki Ohshima, Hideki Kohn, Eunju Lim, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 25, 2008
[Abstract] [Full Text PDF (170K)]

Micro/Nano Electromechanical and Bio-Systems (Devices)

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3204-3208 : In situ Study of DNA Attachment and Hybridization at Silicon Surfaces by Infrared Absorption Spectroscopy: Ken-ichi Ishibashi, Kohki Tanaka, Ayumi Hirano-Iwata, Ko-ichiro Miyamoto, Yasuo Kimura, and Michio Niwano
Published April 25, 2008
[Abstract] [Full Text PDF (125K)]
3209-3213 : Early Breast Cancer Detection by Ultrawide Band Imaging with Dispersion Consideration: Xia Xiao and Takamaro Kikkawa
Published April 25, 2008
[Abstract] [Full Text PDF (259K)]
3214-3219 : One-Chip Integration of Rapid Diagnosis Infectious-Disease Chip Based on New Phenomena of DNA Trap and Denature in Nanogaps: Shingi Hashioka, Chia-Hsien Chang, Kazuya Masu, and Yasuhiro Horiike
Published April 25, 2008
[Abstract] [Full Text PDF (359K)]
3220-3225 : Retinal Stimulation on Rabbit Using Complementary Metal Oxide Semiconductor Based Multichip Flexible Stimulator toward Retinal Prosthesis: Takashi Tokuda, Ryosuke Asano, Sachie Sugitani, Mari Taniyama, Yasuo Terasawa, Masahiro Nunoshita, Kazuaki Nakauchi, Takashi Fujikado, Yasuo Tano, and Jun Ohta
Published April 25, 2008
[Abstract] [Full Text PDF (438K)]
3226-3231 : Large-Displacement Micro-XY-Stage with Paired Moving Plates: Minoru Sasaki, Fuminori Bono, and Kazuhiro Hane
Published April 25, 2008
[Abstract] [Full Text PDF (959K)]
3232-3235 : Ferrite and Copper Electroless Plating of Photopolymerized Resin for Micromolding of Three-Dimensional Structures: Kohki Mukai, Shinya Kitayama, Toshiya Yoshimura, and Shoji Maruo
Published April 25, 2008
[Abstract] [Full Text PDF (370K)]
3236-3239 : Dual Fiber-Optic Fabry–Perot Interferometer Temperature Sensor with Low-Cost Light-Emitting Diode Light Source: Mu-Chun Wang, Zhen-Ying Hsieh, Yuan-Tai Tseng, Fan-Gang Tseng, Heng-Sheng Huang, Jon-En Wang, and Henry F. Taylor
Published April 25, 2008
[Abstract] [Full Text PDF (245K)]
3240-3243 : Rapid and Highly Sensitive Detection of Bacteria Sensor Using a Porous Ion Exchange Film: Kazuki Miyano, Hidemitsu Aoki, Saori Hotta, Nobuaki Fujiwara, Akihiko Masui, Daisaku Yano, Kazuhiko Sano, Koji Yamanaka, Jong-Hyeon Jeong, Chiharu Kimura, and Takashi Sugino
Published April 25, 2008
[Abstract] [Full Text PDF (283K)]
3244-3247 : Power Supply System Using Electromagnetic Induction for Three-Dimensionally Stacked Retinal Prosthesis Chip: Ken Komiya, Risato Kobayashi, Takafumi Kobayashi, Keigo Sato, Takafumi Fukushima, Hiroshi Tomita, Hiroyuki Kurino, Tetsu Tanaka, Makoto Tamai, and Mitsumasa Koyanagi
Published April 25, 2008
[Abstract] [Full Text PDF (605K)]
3248-3252 : Self-Spreading Behavior of Supported Lipid Bilayer through Single Sub-100-nm Gap: Yoshiaki Kashimura, Joana Durao, Kazuaki Furukawa, and Keiichi Torimitsu
Published April 25, 2008
[Abstract] [Full Text PDF (1204K)]

Spintronic Materials and Devices

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3253-3256 : Metal–Organic Vapor Phase Epitaxial Growth Condition Dependences of MnAs Nanocluster Formation on GaInAs (111)A Surfaces: Hiroko Iguchi, Shinjiroh Hara, Junichi Motohisa, and Takashi Fukui
Published April 25, 2008
[Abstract] [Full Text PDF (436K)]
3257-3260 : Spin Transport from Doublet State to Triplet State in Vertical Quantum Dots: Shiu-Ming Huang, Hikota Akimoto, Kimitoshi Kono, Juhn-Jong Lin, Seigo Tarucha, and Keiji Ono
Published April 25, 2008
[Abstract] [Full Text PDF (328K)]
3261-3263 : Hydrogenation-Induced Room-Temperature Ferromagnetism in Co-Doped ZnO Nanocrystals: Yi Wang, Lei Sun, Yan Li, Yi-Fan Zhang, De-Dong Han, Li-Feng Liu, Jin-Feng Kang, Yu-Feng Jin, Xing Zhang, and Ru-Qi Han
Published April 25, 2008
[Abstract] [Full Text PDF (280K)]
3264-3268 : Design of Reconfigurable Logic Circuits Based on Single-Layer Magnetic-Tunnel-Junction Elements: Seungyeon Lee, Gamyoung Lee, Hyunju Lee, Seungjun Lee, and Hyungsoon Shin
Published April 25, 2008
[Abstract] [Full Text PDF (223K)]
3269-3271 : High Remanent Magnetization of L1₀-Ordered FePt Thin Film on MgO/(001) GaAs: Makoto Kohda, Akihiko Ohtsu, Takeshi Seki, Asaya Fujita, Junsaku Nitta, Seiji Mitani, and Koki Takanashi
Published April 25, 2008
[Abstract] [Full Text PDF (170K)]

Applications of Nanotubes and Nanowires

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3272-3276 : Development of Gas Sensors Based on Tungsten Oxide Nanowires in Metal/SiO₂/Metal Structure and Their Sensing Responses to NO₂: Rong-Ming Ko, Shui-Jinn Wang, Zhi-Fu Wen, Jun-Ku Lin, Ga-Hong Fan, Wen-I Shu, and Bor-Wen Liou
Published April 25, 2008
[Abstract] [Full Text PDF (1169K)]
3277-3281 : Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors: Eu Jin Tan, Kin Leong Pey, Navab Singh, Dong-Zhi Chi, Guo-Qiang Lo, Pooi See Lee, Keat-Mun Hoe, Yoke King Chin, and Guang Da Cui
Published April 25, 2008
[Abstract] [Full Text PDF (257K)]
3282-3286 : Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates: Yiming Li, Hui-Wen Cheng, Chen-Chun Lin, and Fu-Ming Pan
Published April 25, 2008
[Abstract] [Full Text PDF (437K)]
3287-3291 : Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-Aligned Process and Effect on Device Transfer Characteristic Hysteresis: Lorraine Rispal, Tobias Tschischke, Hongyu Yang, and Udo Schwalke
Published April 25, 2008
[Abstract] [Full Text PDF (494K)]
3292-3295 : Electric Property Control of Carbon Nanotubes by Defects: Satoru Suzuki, Jun-ichi Hashimoto, Toshio Ogino, and Yoshihiro Kobayashi
Published April 25, 2008
[Abstract] [Full Text PDF (231K)]
3296-3298 : Synethesis of VO₂ Nanowire and Observation of Metal–Insulator Transition: Sungyoul Choi, Bong-Jun Kim, Yong Wook Lee, Sun Jin Yun, and Hyun-Tak Kim
Published April 25, 2008
[Abstract] [Full Text PDF (538K)]
3299-3302 : Effects of Cu Catalyst and Water Vapor on the Growth of Ge–GeO_x Core–Shell Nanowires via the Carbothermal Reduction of GeO₂ Powders: Wei-Long Lo, Han-Chen Chang, Ting-Jui Hsu, and Wen-Tai Lin
Published April 25, 2008
[Abstract] [Full Text PDF (360K)]
3303-3309 : First-Principles Study of Silicon Nanowires with Different Surfaces: Mingzhi Gao, Siyu You, and Yan Wang
Published April 25, 2008
[Abstract] [Full Text PDF (729K)]

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