Table of Contents: Vol. 49, No. 4 (2010)
Special Issue: Solid State Devices and Materials
Advanced gate stack/Si processing science
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04DA01 : Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
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Masakatsu Tsuchiaki and Akira Nishiyama
Published April 20, 2010 (9 pages)
[Abstract]
[Full Text PDF : (565K)]
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04DA02 : Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation
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Kazuya Matsumoto, Seiichiro Higashi, Hideki Murakami, and Seiichi Miyazaki
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (550K)]
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04DA03 : Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors
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Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (590K)]
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04DA04 : Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation
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Bing-Yue Tsui and Chen-Ming Lee
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (324K)]
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04DA05 : Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor
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Hiroshi Itokawa, Kiyotaka Miyano, Yasunori Oshima, Ichiro Mizushima, and Kyoichi Suguro
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (272K)]
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04DA06 : Contribution of Carbon to Activation and Diffusion of Boron in Silicon
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Hiroshi Itokawa, Yuji Agatsuma, Nobutoshi Aoki, Naotaka Uchitomi, and Ichiro Mizushima
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (422K)]
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04DA07 : Influence of Carbon in In-situ Carbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics
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Hiroto Oomae, Hiroshi Itokawa, Ichiro Mizushima, Shinichi Nakamura, and Naotaka Uchitomi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (277K)]
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04DA08 : High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
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Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, and Masanobu Miyao
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (252K)]
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04DA09 : Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge
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Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, and Shinichi Takagi
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (217K)]
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04DA10 : Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
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Osamu Nakatsuka, Norimasa Tsutsui, Yosuke Shimura, Shotaro Takeuchi, Akira Sakai, and Shigeaki Zaima
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (224K)]
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04DA11 : Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films
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Kazuaki Miyamoto, Hiroki Kondo, and Shigeaki Zaima
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (2021K)]
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04DA12 : The Role of High-κ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
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Nai-Chao Su, Shui-Jinn Wang, Chin-Chuan Huang, Yu-Han Chen, Hao-Yuan Huang, Chen-Kuo Chiang, Chien-Hung Wu, and Albert Chin
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (301K)]
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04DA13 : Properties of LaAlO Film after Waterless Process Using Organic Solvent Containing Anhydrous Hydrofluoric Acid
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Masatomo Honjo, Naoyoshi Komatsu, Takuro Masuzumi, Hidemitsu Aoki, Daisuke Watanabe, Chiharu Kimura, and Takashi Sugino
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (171K)]
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04DA14 : Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 Precursor
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Hiroki Kondo, Hirotaka Matsui, Kazuya Furuta, Mitsuo Sakashita, and Shigeaki Zaima
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (398K)]
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04DA15 : Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary HfxMoyNz Metal Gate and Gd2O3 High-k Gate Dielectric
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Hsing-Kan Peng, Chao-Sung Lai, and Jer-Chyi Wang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (168K)]
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04DA16 : Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
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Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Shin-ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Meishoku Masahara
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (383K)]
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04DA17 : Thermally Stable NiSi Gate Electrode with TiN Barrier Metal for High-Density NAND Flash Memory Devices
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Sung-Jin Whang, Moon-Sig Joo, Bo-Min Seo, Kyoung-Eun Chang, Won-Kyu Kim, Tae-Woo Jung, Gyu-Hyun Kim, Jung-Yeon Lim, Ka-Young Kim, Kwon Hong, and Sung-Ki Park
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (428K)]
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04DA18 : Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
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Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono
Published April 20, 2010 (8 pages)
[Abstract]
[Full Text PDF : (244K)]
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04DA19 : Atomic Layer Control for Suppressing Extrinsic Defects in Ultrathin SiON Gate Insulator of Advanced Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
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Satoshi Shimamoto, Hiroshi Kawashima, Toshiyuki Kikuchi, Yasuo Yamaguchi, and Atsushi Hiraiwa
Published April 20, 2010 (7 pages)
[Abstract]
[Full Text PDF : (269K)]
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04DA20 : In situ Si Wafer Surface Temperature Measurement during Flash Lamp Annealing
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Yoshiro Yamada, Takayuki Aoyama, Hajime Chino, Kensuke Hiraka, Juntaro Ishii, Satoru Kadoya, Shinichi Kato, Hiroki Kiyama, Hideki Kondo, Tohru Kuroiwa, Kaoru Matsuo, Tatsushi Owada, Takao Shimizu, and Takehiko Yokomori
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (150K)]
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04DA21 : Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens
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Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Ryosuke Shimidzu, and Atsushi Ogura
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (376K)]
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04DA22 : Three-Dimensional Visualization Technique for Crystal Defects in High Performance p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Embedded SiGe Source/Drain
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Shuichi Kudo, Nobuto Nakanishi, Yukinori Hirose, Kazuhiko Sato, Tomohiro Yamashita, Hidekazu Oda, Keiichiro Kashihara, Naofumi Murata, Toshiharu Katayama, Kyoichiro Asayama, Junko Komori, and Eiichi Murakami
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (389K)]
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04DA23 : Creation of a Degraded Layer on the Surface of Photoresist by Radical Irradiation
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Naoyuki Kofuji and Hideo Miura
Published April 20, 2010 (8 pages)
[Abstract]
[Full Text PDF : (285K)]
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Characterization and materials engineering for interconnect integration
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04DB01 : Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump
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Naoya Watanabe, Isao Tsunoda, Takayuki Takao, Koichiro Tanaka, and Tanemasa Asano
Published April 20, 2010 (8 pages)
[Abstract]
[Full Text PDF : (838K)]
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04DB02 : Room-Temperature Bonding Using Mechanical Caulking Effect of Compliant Bumps for Chip-Stack Interconnection
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Naoya Watanabe and Tanemasa Asano
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (291K)]
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04DB03 : Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction
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Akio Toda and Nobuyuki Ikarashi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (177K)]
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04DB04 : Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-k/Cu Interconnects
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Ippei Kume, Naoya Inoue, Shinobu Saito, Naoya Furutake, Jun Kawahara, and Yoshihiro Hayashi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (887K)]
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04DB05 : Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora® LK HM
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Steven Demuynck, Craig Huffman, Martine Claes, Samuel Suhard, Janko Versluijs, Henny Volders, Nancy Heylen, Kristof Kellens, Kristof Croes, Herbert Struyf, Guy Vereecke, Patrick Verdonck, David De Roest, Julien Beynet, Hessel Sprey, and Gerald P. Beyer
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (861K)]
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04DB06 : Hard-Mask-Through UV-Light-Induced Damage to Low-k Film during Plasma Process for Dual Damascene
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Noriaki Matsunaga, Hirokatsu Okumura, Butsurin Jinnai, and Seiji Samukawa
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (867K)]
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04DB07 : Evaluation of Dielectric Constant through Direct Chemical Mechanical Planarization of Porous Low-k Film
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Masako Kodera, Takumi Takahashi, and Gaku Mimamihaba
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (157K)]
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04DB08 : Comparison of Lifetime Improvements in Electromigration between Ti Barrier Metal and Chemical Vapor Deposition Co Capping
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Yumi Kakuhara, Shinji Yokogawa, and Kazuyoshi Ueno
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (275K)]
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04DB09 : Effects of Pore Sealing on Self-Formation of Ti-Rich Barrier Layers in Cu(Ti)/Porous-Low-k Samples
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Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi, Tomohisa Tanaka, Kenichi Mori, Kazuyoshi Maekawa, Yasuharu Shirai, and Masanori Murakami
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (307K)]
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04DB10 : Suppression of Fluorine Diffusion into Methyl Boron Carbon Nitride Film Using Low-Temperature Etching
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Makoto Hara, Takuro Masuzumi, Zhiming Lu, Chiharu Kimura, Hidemitsu Aoki, and Takashi Sugino
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (133K)]
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04DB11 : Low-Temperature Silicon Oxide Offset Spacer Using Plasma-Enhanced Atomic Layer Deposition for High-k/Metal Gate Transistor
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Tatsunori Murata, Yoshihiro Miyagawa, Yukio Nishida, Yoshiki Yamamoto, Tomohiro Yamashita, Masazumi Matsuura, Koyu Asai, and Hiroshi Miyatake
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (354K)]
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04DB12 : Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging
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Shinichi Ogawa, William Thompson, Lewis Stern, Larry Scipioni, John Notte, Lou Farkas, and Louise Barriss
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (280K)]
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04DB13 : Novel Particle-Reduction System in Plasma-Enhanced Chemical Vapor Deposition Process of Interlayer Dielectrics
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Michio Sato, Hiroto Ohtake, and Seiji Samukawa
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (297K)]
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04DB14 : Prediction of Abnormal Etching Profile in High-Aspect-Ratio Via/Hole Etching Using On-Wafer Monitoring System
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Hiroto Ohtake, Seiichi Fukuda, Butsurin Jinnai, Tomohiko Tatsumi, and Seiji Samukawa
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (290K)]
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04DB15 : A Novel Multilayered Ni–Zn-Ferrite/TaN Film for RF/Mobile Applications
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Kishou Kaneko, Naoya Inoue, Naoya Furutake, and Yoshihiro Hayashi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (977K)]
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04DB16 : Stability of La2O3 Metal–Insulator–Metal Capacitors under Constant Voltage Stress
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Shu-Hua Wu, Chih-Kang Deng, Tuo-Hung Hou, and Bi-Shiou Chiou
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (228K)]
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04DB17 : Effect of Magnetic Field on Permeability of Electroplated Permalloy for Microdevices
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Eitaro Kubo, Naoki Ooi, Hidemitsu Aoki, Daisuke Watanabe, Jong-Hyeon Jeong, Chiharu Kimura, and Takashi Sugino
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (242K)]
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CMOS devices/device physics
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04DC01 : Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide
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Chiho Lee, Arifin Tamsir Putra, Ken Shimizu, and Toshiro Hiramoto
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (154K)]
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04DC02 : Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal–Oxide–Semiconductor with High Dielectric Constant Material
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Ming-Hung Han, Yiming Li, and Chih-Hong Hwang
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (487K)]
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04DC03 : Temperature Coefficient of Threshold Voltage in High-k Metal Gate Transistors with Various TiN and Capping Layer Thicknesses
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Yukio Nishida, Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue, and Kentaro Shibahara
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (145K)]
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04DC04 : DC Improvements and Low-Frequency 1/f Noise Characteristics of Complimentary Metal–Oxide–Semiconductor Transistors with a Single n+-Doped Polycrystalline Si/SiGe Gate Stack
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Hugo Ricardo Jiménez Grados, Leandro T. Manera, Ricardo Wada, José Alexandre Diniz, Ioshiaki Doi, Peter Jurgen Tatsch, Hugo Enrique Figueroa, and Jacobus W. Swart
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (228K)]
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04DC05 : Impact of Interface Roughness on Threshold-Voltage Variation in Ultrasmall Gate-All-Around and Double-Gate Field-Effect Transistors
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Nobuya Mori and Hideki Minari
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (272K)]
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04DC06 : Analysis of Hundreds of Time Constant Ratios and Amplitudes of Random Telegraph Signal with Very Large Scale Array Test Pattern
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Takafumi Fujisawa, Kenichi Abe, Shunichi Watabe, Naoto Miyamoto, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (509K)]
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04DC07 : Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise
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Kenichi Abe, Akinobu Teramoto, Shunichi Watabe, Takafumi Fujisawa, Shigetoshi Sugawa, Yutaka Kamata, Katsuhiko Shibusawa, and Tadahiro Ohmi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (303K)]
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04DC08 : Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition
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Liangliang Zhang, Changze Liu, Runsheng Wang, Ru Huang, Tao Yu, Jing Zhuge, Paul Kirsch, Hsing-Huang Tseng, and Yangyuan Wang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (230K)]
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04DC09 : Comparative Study of Multigate and Multifin Metal–Oxide–Semiconductor Field-Effect Transistor
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Hui-Wen Cheng and Yiming Li
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (235K)]
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04DC10 : Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width
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Daniele Leonelli, Anne Vandooren, Rita Rooyackers, Anne S. Verhulst, Stefan De Gendt, Marc M. Heyns, and Guido Groeseneken
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (580K)]
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04DC11 : Quantitative Analysis of Hump Effects of Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors
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Woojun Lee and Woo Young Choi
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (280K)]
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04DC12 : Investigation of Novel Si/SiGe Heterostructures and Gate Induced Source Tunneling for Improvement of p-Channel Tunnel Field-Effect Transistors
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Hasanali G. Virani, Rama Bhadra Rao, and Anil Kottantharayil
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (299K)]
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04DC13 : New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal–Oxide–Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices
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Tomohisa Mizuno, Naoki Mizoguchi, Kotaro Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima, and Tsutomu Tezuka
Published April 20, 2010 (7 pages)
[Abstract]
[Full Text PDF : (314K)]
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04DC14 : Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor
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Shinichiro Adachi and Tanemasa Asano
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (422K)]
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04DC15 : Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance
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Daisuke Hori, Masataka Miyake, Norio Sadachika, Hans-Juergen Mattausch, Mitiko Miura-Mattausch, Takahiro Iizuka, Teruhiko Hoshida, Kazuya Matsuzawa, Yasuyuki Sahara, and Toshiro Tsukada
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (283K)]
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04DC16 : Sub-30-nm Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with Pt-Incorporated Fully Ni-Silicide/SiON Gate Stack
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Hidenobu Fukutome, Kazuya Okubo, Sinichi Akiyama, Naoki Idani, Hiroyuki Ohta, Kazuo Kawamura, Yoichi Momiyama, and Shigeo Satoh
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (217K)]
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04DC17 : High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation
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Akira Wada, Keisuke Sano, Masahiro Yonemoto, Kazuhiko Endo, Takashi Matsukawa, Meishoku Masahara, Satoshi Yamasaki, and Seiji Samukawa
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (310K)]
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04DC18 : Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
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Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, and Meishoku Masahara
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (313K)]
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04DC19 : Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study
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Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori, and Kenji Taniguchi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (486K)]
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04DC20 : Comprehensive Study of Electron Mobility and Band Gap in Tensile-Strained Bulk Ge
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Mizuki Ono and Tsutomu Tezuka
Published April 20, 2010 (7 pages)
[Abstract]
[Full Text PDF : (241K)]
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04DC21 : Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass
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Yukio Nakabayashi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida, and Shinichi Takagi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (195K)]
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04DC22 : Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal–Oxide–Semiconductor Field-Effect Transistors Using Measured S-Parameters
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Bonghyuk Ko, Daehyoun Jung, and Seonghearn Lee
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (151K)]
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04DC23 : Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
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Shigeki Kobayashi, Masumi Saitoh, Yukio Nakabayshi, Takamitsu Ishihara, Toshinori Numata, and Ken Uchida
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (418K)]
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04DC24 : Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
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Motoyuki Sato, Satoshi Kamiyama, Takeo Matsuki, Dai Ishikawa, Tetsuro Ono, Tetsu Morooka, Jiro Yugami, Kazuto Ikeda, and Yuzuru Ohji
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (204K)]
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04DC25 : Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
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Yandong He, Gang Du, Yunxiang Yang, Ganggang Zhang, Xing Zhang, and Yangyuan Wang
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (119K)]
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04DC26 : Defect Generation and Severity Comparison of Negative Bias Temperature Stress-Induced Degradation on 90 nm p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Different Oxide Thicknesses
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Shuang-Yuan Chen and Chia-Hao Tu
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (358K)]
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04DC27 : The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System
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Chien-Hsuan Liu, Yan-Kuin Su, Ruey-Lue Wang, Chih-Ho To, and Ying-Zong Juang
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (172K)]
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Advanced memory technology
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04DD01 : Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal–Insulator–Metal Capacitors Using TiN Bottom Electrode
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Nicolas Menou, Mihaela Popovici, Karl Opsomer, Ben Kaczer, Malgorzata A. Pawlak, Christoph Adelmann, Alexis Franquet, Paola Favia, Hugo Bender, Christophe Detavernier, Sven Van Elshocht, Dirk J. Wouters, Serge Biesemans, and Jorge A. Kittl
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (417K)]
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04DD02 : Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain
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Poren Tang, Ru Huang, and Dake Wu
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (170K)]
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04DD03 : High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate
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Poren Tang, Ru Huang, Dake Wu, Yilin Zhang, and Yangyuan Wang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (260K)]
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04DD04 : A Highly Scalable Capacitor-Less Cell Having a Doubly Gated Vertical Channel
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Wookhyun Kwon and Tsu-Jae King Liu
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (223K)]
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04DD05 : Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications
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Chia-En Huang, Ying-Je Chen, Hsun OuYang, Chrong-Jung Lin, and Ya-Chin King
Published April 20, 2010 (3 pages)
[Abstract]
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04DD06 : A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories
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Shosuke Fujii, Naoki Yasuda, Jun Fujiki, and Kouichi Muraoka
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (129K)]
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04DD07 : Direct Measurement of Back-Tunneling Current during Program/Erase Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories and Its Dependence on Gate Work Function
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Jun Fujiki, Shosuke Fujii, Naoki Yasuda, and Kouichi Muraoka
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (281K)]
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04DD08 : A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with ΔVTH = 1/6ΔVERASE for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories
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Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, and Ken Takeuchi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (267K)]
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04DD09 : Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory
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Makoto Mizukami, Kiyohito Nishihara, Hirokazu Ishida, Fumiki Aiso, Tadashi Iguchi, Daigo Ichinose, Atsushi Fukumoto, Nobutoshi Aoki, Masaki Kondo, Takashi Izumida, Hiroyoshi Tanimoto, Toshiyuki Enda, Hiroshi Watanabe, Shuichi Toriyama, Takashi Suzuki, Ichiro Mizushima, and Fumitaka Arai
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (426K)]
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04DD10 : A 1.2 V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized Threshold Voltage at Each Pump Stage for Ferroelectric-NAND Flash Memories
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Shinji Noda, Teruyoshi Hatanaka, Kousuke Miyaji, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, and Ken Takeuchi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (549K)]
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04DD11 : Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
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Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Maki Hattori, Daisuke Katayama, Tatsuo Nishita, Yoshihiro Hirota, Masatake Machida, Jin-Young Son, Tomoyuki Koganezawa, Ichiro Hirosawa, and Atsushi Ogura
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (272K)]
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04DD12 : Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices
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Etienne Nowak, Elisa Vianello, Luca Perniola, Marc Bocquet, Gabriel Molas, Rabah Kies, Marc Gely, Gerard Ghibaudo, Barbara De Salvo, Gilles Reimbold, and Fabien Boulanger
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (252K)]
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04DD13 : A New Differential Logic-Compatible Multiple-Time Programmable Memory Cell
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Yi-Hung Tsai, Hsiao-Lan Yang, Wun-Jie Lin, Chrong Jung Lin, and Ya-Chin King
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (214K)]
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04DD14 : Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride–tetrafluoroethylene) Gate Field-Effect Transistor Memories
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Tomohiro Watanabe, Hiroyuki Miyashita, Takeshi Kanashima, and Masanori Okuyama
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (327K)]
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04DD15 : Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory
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Keiji Hosotani, Makoto Nagamine, Tomomasa Ueda, Hisanori Aikawa, Sumio Ikegawa, Yoshiaki Asao, Hiroaki Yoda, and Akihiro Nitayama
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (447K)]
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04DD16 : Elevated-Confined Phase-Change Random Access Memory Cells
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Lee Hock Koon, Shi Luping, Zhao Rong, Yang Hongxin, Lim Kian Guan, Li Jianming, and Chong Tow Chong
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (382K)]
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04DD17 : Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
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Erh-Kun Lai, Wei-Chih Chien, Yi-Chou Chen, Tian-Jue Hong, Yu-Yu Lin, Kuo-Pin Chang, Yeong-Der Yao, Pang Lin, Sheng-Fu Horng, Jeng Gong, Shih-Chang Tsai, Ching-Hsiung Lee, Sheng-Hui Hsieh, Chun-Fu Chen, Yen-Hao Shih, Kuang-Yeu Hsieh, Rich Liu, and Chih-Yuan Lu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (568K)]
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04DD18 : Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
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Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Frederick Chen, and Ming-Jinn Tsai
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (282K)]
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04DD19 : Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory
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Yukihiro Sakotsubo, Masayuki Terai, Setsu Kotsuji, Toshitsugu Sakamoto, and Mitsuhiro Hada
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (626K)]
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Advanced circuits and systems
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04DE01 : Reference Complementary Metal–Oxide–Semiconductor Circuits and Test Structures for Evaluation of Dynamic Noise in Power Delivery Networks
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Tetsuro Matsuno, Daisuke Kosaka, and Makoto Nagata
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (1451K)]
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04DE02 : A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits
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Takahiro Kohara, Woonghee Lee, Koichi Mizobuchi, and Shigetoshi Sugawa
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (471K)]
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04DE03 : Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor
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Shin Sakai, Yoshiaki Tashiro, Shun Kawada, Rihito Kuroda, Nana Akahane, Koichi Mizobuchi, and Shigetoshi Sugawa
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (725K)]
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04DE04 : White–Red–Green–Blue Lateral Overflow Integration Capacitor Complementary Metal–Oxide–Semiconductor Image Sensor with Color-Independent Exposure and Widely-Spectral High Sensitivity
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Shun Kawada, Shin Sakai, Yoshiaki Tashiro, and Shigetoshi Sugawa
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (346K)]
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04DE05 : Three-Dimensional Binocular Range Sensor LSI with Enhanced Correlation Signal
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Masatomo Kawano, Norihito Kawaguchi, Takashi Yoshida, and Yutaka Arima
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (460K)]
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04DE06 : Three-Dimensional Binocular Range Sensor Large Scale Integration with a 410 µs/Frame Output Time High-Speed Data Output Method
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Norihito Kawaguchi, Masatomo Kawano, and Yutaka Arima
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (239K)]
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04DE07 : A Current-Mode Multiple-Resolution Edge-Filtering Complementary Metal Oxide Semiconductor Image Sensor Employing Self-Similitude Processing in Non-Subtraction Configuration
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Norihiro Takahashi and Tadashi Shibata
Published April 20, 2010 (9 pages)
[Abstract]
[Full Text PDF : (460K)]
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04DE08 : A Binary-Tree Hierarchical Multiple-Chip Architecture for Real-Time Large-Scale Learning Processor Systems
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Yitao Ma and Tadashi Shibata
Published April 20, 2010 (8 pages)
[Abstract]
[Full Text PDF : (575K)]
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04DE09 : A New Differential-Amplifier-Based Offset-Cancellation Sense Amplifier for Speed-Improvement of High-Density Static Random Access Memories in Scaled-Down Complementary Metal–Oxide–Semiconductor Technology
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Hidetoshi Ikeda, Koichi Takeda, Masahiro Nomura, and Yoshihiro Hayashi
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (372K)]
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04DE10 : Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal–Oxide–Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme
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Koji Kotani, Yohei Koshimoto, and Takashi Ito
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (150K)]
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04DE11 : A 3.5–4.5 GHz Complementary Metal–Oxide–Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication
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Afreen Azhari, Kentaro Kimoto, Nobuo Sasaki, and Takamaro Kikkawa
Published April 20, 2010 (7 pages)
[Abstract]
[Full Text PDF : (433K)]
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04DE12 : RF Signal Generator Based on Time-to-Analog Converter in 0.18 µm Complementary Metal Oxide Semiconductor
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Kazuo Nakano, Shuhei Amakawa, Noboru Ishihara, and Kazuya Masu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (2947K)]
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04DE13 : Above-Complementary Metal–Oxide–Semiconductor Inductor for Rapid Prototyping of Mixed-Signal System on Chips
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Yutaka Omiya, Koji Kotani, and Takashi Ito
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (253K)]
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04DE14 : Design of On-Chip High Speed Interconnect on Complementary Metal Oxide Semiconductor 180 nm Technology
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Takao Oshita, Shuhei Amakawa, Noboru Ishihara, and Kazuya Masu
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (397K)]
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04DE15 : An Optimal Design Method for Complementary Metal Oxide Semiconductor Even-Stage Ring Oscillators Containing Latches
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Yusuke Kohara, Masaharu Asano, Yoshihiro Kawakami, Yasuhisa Uchida, Hiroki Koike, and Kazuyuki Nakamura
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (532K)]
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04DE16 : Enhanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Charge Pump for Low-Voltage Applications
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Chien-Pin Hsu, Hai-Ming Wu, and Hongchin Lin
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (358K)]
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Compound semiconductor circuits, electron devices, and device physics
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04DF01 : Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication
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Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki, Toshihiro Ohki, Tsuyoshi Takahashi, Kozo Makiyama, and Naoki Hara
Published April 20, 2010 (8 pages)
[Abstract]
[Full Text PDF : (616K)]
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04DF02 : 0.25-µm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure
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Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Minoru Ida, and Shoji Yamahata
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (443K)]
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04DF03 : Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors
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Hirohisa Taguchi, Yasuyuki Oishi, Takahisa Ando, Kazuya Uchimura, Miho Mochiduki, Mitsuhiro Enomoto, Tsutomu Iida, and Yoshifumi Takanashi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (255K)]
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04DF04 : Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
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Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (379K)]
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04DF05 : Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates
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Ji Ha Kim, Hong Goo Choi, Min-Woo Ha, Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Jung Ho Park, and Cheol-Koo Hahn
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (174K)]
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04DF06 : High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer
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Young-Hwan Choi, Sun-Jae Kim, Young-Shil Kim, Min-Ki Kim, Ogyun Seok, and Min-Koo Han
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (303K)]
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04DF07 : Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C
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Denis Marcon, Marleen Van Hove, Domenica Visalli, Joff Derluyn, Jo Das, Farid Medjdoub, Stefan Degroote, Maarten Leys, Kai Cheng, Robert Mertens, Marianne Germain, and Gustaaf Borghs
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (186K)]
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04DF08 : Electrical Properties of Metal–Insulator–Semiconductor Capacitors on Freestanding GaN Substrate
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Eunhee Kim, Narumasa Soejima, Yukihiko Watanabe, Masayasu Ishiko, and Tetsu Kachi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (296K)]
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04DF09 : GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
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Jin-Ping Ao, Katsutoshi Nakatani, Keisuke Ohmuro, Masahiro Sugimoto, Cheng-Yu Hu, Yuji Sogawa, and Yasuo Ohno
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (196K)]
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04DF10 : Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
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Norimasa Yafune, Motoi Nagamori, Hironari Chikaoka, Fuminao Watanabe, Keiichi Sakuno, and Masaaki Kuzuhara
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (314K)]
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04DF11 : Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C
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Cheng-Yu Hu, Hiroyuki Nokubo, Masanari Okada, Jin-Ping Ao, and Yasuo Ohno
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (135K)]
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04DF12 : Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer
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Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Kai-Shun Kang, Jing-Fong Huang, Wei-Li Wang, and Wei-Chih Lai
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (295K)]
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04DF13 : Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x = 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
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Masanobu Hiroki, Narihiko Maeda, and Naoteru Shigekawa
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (300K)]
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04DF14 : Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and Their Applications as Temperature Sensors
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Abdeldjelil Habib Zahmani, Akira Nishijima, Yoshitaka Morimoto, Heng Wang, Jing-Feng Li, and Adarsh Sandhu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (339K)]
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04DF15 : The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique
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Yan-Kuin Su, Chien-Chih Kao, Chuing-Liang Lin, and Jian-Jhong Chen
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (299K)]
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04DF16 : High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
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Kenji Ueda and Makoto Kasu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (396K)]
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04DF17 : Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates
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Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, and Taiichi Otsuji
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (463K)]
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04DF18 : Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature
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Takashi Futatsuki, Taro Oe, Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, and Takashi Sugino
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (390K)]
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04DF19 : Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition
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Yumi Kawamura, Masahiro Horita, and Yukiharu Uraoka
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (234K)]
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04DF20 : Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment
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Kariyadan Remashan, Yong-Seok Choi, Se-Koo Kang, Jeong-Woon Bae, Geun-Young Yeom, Seong-Ju Park, and Jae-Hyung Jang
Published April 20, 2010 (7 pages)
[Abstract]
[Full Text PDF : (450K)]
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04DF21 : Characteristics of Transparent ZnO-Based Thin-Film Transistors with High-k Dielectric Gd2O3 Gate Insulators Fabricated at Room Temperature
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Kou-Chen Liu, Jung-Ruey Tsai, Chi-Shiau Li, Po-Hsiu Chien, Jyun-Ning Chen, and Wen-Sheng Feng
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (308K)]
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Photonic devices and device physics
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04DG01 : Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-Oriented GaAs Substrate
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Fumiya Tanaka, Tomoya Takahashi, Ken Morita, Takahiro Kitada, and Toshiro Isu
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (148K)]
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04DG02 : GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Planar-Type Optical Kerr Gate Switches
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Tomoya Takahashi, Takuya Mukai, Ken Morita, Takahiro Kitada, and Toshiro Isu
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (227K)]
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04DG03 : Quantum Dot Optical Frequency Comb Laser with Mode-Selection Technique for 1-µm Waveband Photonic Transport System
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Naokatsu Yamamoto, Kouichi Akahane, Tetsuya Kawanishi, Redouane Katouf, and Hideyuki Sotobayashi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (258K)]
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04DG04 : Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well
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Yuji Iseri, Taro Arakawa, Kunio Tada, and Nobuo Haneji
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (338K)]
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04DG05 : AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
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Chin-Hsiang Chen, Shoou-Jinn Chang, Ming-Hsien Wu, Sung-Yi Tsai, and Hsiu-Ju Chien
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (169K)]
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04DG06 : Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers
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Chin-Hsiang Chen, Kuo-Ren Wang, Sung-Yi Tsai, Hsiu-Ju Chien, and San-Lein Wu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (302K)]
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04DG07 : Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
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Ping-Chieh Tsai, Yan-Kuin Su, Wen-Ray Chen, and Chun-Yuan Huang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (384K)]
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04DG08 : Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes
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Chun-Feng Lai, Chia-Hsin Chao, Hao-Chung Kuo, Peichen Yu, His-Hsuan Yen, and Wen-Yung Yeh
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (464K)]
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04DG09 : GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
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Chun-Feng Lai, Chia-Hsin Chao, Hao-Chung Kuo, Peichen Yu, His-Hsuan Yen, and Wen-Yung Yeh
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (309K)]
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04DG10 : A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes
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Pei-Ren Wang, Shui-Jinn Wang, Hon-Yi Kuo, Kai-Ming Uang, Tron-Min Chen, Po-Hung Wang, Wei-Chi Lee, and Der-Ming Kuo
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (390K)]
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04DG11 : Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes
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Hee Kwan Lee and Jae Su Yu
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (259K)]
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04DG12 : Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods
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Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, Po-Hong Wang, and Shui-Jinn Wang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (595K)]
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04DG13 : Indium-Doped MgxZn1-xO Films for ZnO-Based Heterojunction Diodes
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Takako Tsuboi, Kenji Yamamoto, Atsushi Nakamura, and Jiro Temmyo
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (466K)]
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04DG14 : Light-Emitting Diode Based on ZnO by Plasma-Enhanced Metal–Organic Chemical Vapor Deposition Employing Microwave Excited Plasma
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Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, and Tadahiro Ohmi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (289K)]
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04DG15 : ZnO Channel Waveguides for Nonlinear Optical Applications
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Edgar Yoshio Morales Teraoka, Tomohiro Kita, Atsushi Tsukazaki, Masashi Kawasaki, Yasuo Ohtera, and Hirohito Yamada
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (132K)]
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04DG16 : Enhanced Room-Temperature 1.6 µm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide
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Mitsushi Suzuno, Tomoaki Koizumi, Hideki Kawakami, and Takashi Suemasu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (256K)]
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04DG17 : Optical Signal Modulation of Semiconductor Soliton Device with Circular Ring Resonator
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Ming Chang Shih, Wen Hsuan Sheih, and Cheng Seng Chen
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (208K)]
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04DG18 : Reduction in Operation Voltage of Silicon Ring Optical Modulator Using High-k (Ba,Sr)TiO3 Cladding Layer
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Yoshiteru Amemiya, Mizue Nishida, Hao Ding, Masataka Fukuyama, and Shin Yokoyama
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (476K)]
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04DG19 : Design of Polarization-Independent Si-Wire-Waveguide Wavelength Demultiplexer for Optical Network Unit
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Hideaki Okayama, Kyoko Kotani, Yoshinori Maeno, Daisuke Shimura, Hiroki Yaegashi, and Yoh Ogawa
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (295K)]
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04DG20 : Compact and Polarization-Independent Variable Optical Attenuator Based on a Silicon Wire Waveguide with a Carrier Injection Structure
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Hidetaka Nishi, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Koji Yamada, and Sei-ichi Itabashi
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (480K)]
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04DG21 : Integrated SiO2/SiON/SiO2 Thermo-Optical Switch Based on the Multimode Interference Effect
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Ricky W. Chuang, Mao-Teng Hsu, and Zhen-Liang Liao
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (306K)]
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04DG22 : Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers
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Romain Mentek, Bernard Gelloz, and Nobuyoshi Koshida
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (214K)]
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04DG23 : Effect of Mesa Shape on Threading Dislocation Density in Ge Epitaxial Layers on Si after Post-Growth Annealing
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Yoichi Takada, Jiro Osaka, Yasuhiko Ishikawa, and Kazumi Wada
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (269K)]
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Advanced material synthesis and crystal growth technology
-
04DH01 : Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
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Kazuyuki Hirama, Yoshitaka Taniyasu, and Makoto Kasu
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (3127K)]
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04DH02 : Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities
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Seong-Muk Jeong, Suthan Kissinger, Yong-Ho Ra, Seok-Hyo Yun, Dong-Wook Kim, Seung Jae Lee, Haeng-Keun Ahn, Jin-Soo Kim, and Cheul-Ro Lee
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (666K)]
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04DH03 : Growth and Characterization of High Quality a-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique
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Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Yong Gon Seo, and Sung-Min Hwang
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (360K)]
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04DH04 : Improvement in a-Plane GaN Crystal Quality by Investigating Different Buffer Layer
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Hsiao-Chiu Hsu, Yan-Kuin Su, Shyh-Jer Huang, Yu-Jen Wang, Chun-Ying Wu, and Ming-Chieh Chou
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (197K)]
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04DH05 : Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition
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Hsiao-Chiu Hsu, Yan-Kuin Su, Shyh-Jer Huang, Yu-Jen Wang, Chun-Ying Wu, and Ming-Chieh Chou
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (368K)]
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04DH06 : Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
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Jui-Tai Ku, Tsung-Hsi Yang, Jet-Rung Chang, Yuen-Yee Wong, Wu-Ching Chou, Chun-Yen Chang, and Chiang-Yao Chen
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (247K)]
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04DH07 : Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum Dot Structures
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Kohki Mukai, Keita Watanabe, and Yuuta Kimura
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (307K)]
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04DH08 : Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy
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Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa, and Takashi Fukui
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (548K)]
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04DH09 : Fabrication of Self-Assembled InGaAs Squarelike Nanoholes on GaAs(001) by Droplet Epitaxy
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Poonyasiri Boonpeng, Wipakorn Jevasuwan, Somsak Panyakeow, and Somchai Ratanathammaphan
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (398K)]
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04DH10 : Low Temperature Metal-Induced Lateral Crystallization of Si1-xGex Using Silicide/Germanide-Forming-Metals
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Thanh Hoa Phung, Ruilong Xie, Sudhiranjan Tripathy, Mingbin Yu, and Chunxiang Zhu
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (278K)]
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04DH11 : Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating
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Masatoshi Wakagi, Isao Suzumura, Akiko Kagatsume, Haruhiko Asanuma, Etsuko Nishimura, Mieko Matsumura, Tsutomu Hosoi, and Jun-ichi Hanna
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (419K)]
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04DH12 : Effect of Drain Bias Stress on Stability of Nanocrystalline Silicon Thin Film Transistors with Various Channel Lengths
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Sun-Jae Kim, Sang-Geun Park, Seon-Beom Ji, and Min-Koo Han
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (323K)]
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04DH13 : Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol
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Fumihiko Maeda and Hiroki Hibino
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (572K)]
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04DH14 : Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing
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Jun Jiang, Shin-Ichiro Kuroki, Koji Kotani, and Takashi Ito
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (258K)]
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Physics and applications of novel functional materials and devices
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04DJ01 : Dual-Gate Single-Electron Transistor with Silicon Nano Wire Channel and Surrounding Side Gates
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Dong Seup Lee, Kwon-Chil Kang, Joung-Eob Lee, Hong-Seon Yang, Jung Han Lee, and Byung-Gook Park
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (811K)]
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04DJ02 : Dislocation-Based Si-Nanodevices
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Manfred Reiche, Martin Kittler, Dan Buca, Angelika Hähnel, Qing-Tai Zhao, Siegfried Mantl, and Ulrich Gösele
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (297K)]
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04DJ03 : Slow and Fast Electron Channels in a Coherent Quantum Dot Mixer
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Guy Austing, Chris Payette, Guolin Yu, James Gupta, Geof Aers, Selva Nair, Shinichi Amaha, and Seigo Tarucha
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (193K)]
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04DJ04 : Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures
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Naoya Morisawa, Mitsuhisa Ikeda, Sho Nakanishi, Akira Kawanami, Katsunori Makihara, and Seiichi Miyazaki
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (368K)]
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04DJ05 : Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator
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Kosuke Ohara, Ichiro Yamashita, and Yukiharu Uraoka
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (340K)]
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04DJ06 : Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors
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Sung-Min Yoon, Shin-Hyuk Yang, Chun-Won Byun, Sang-Hee Ko Park, Soon-Won Jung, Doo-Hee Cho, Seung-Youl Kang, Chi-Sun Hwang, and Hiroshi Ishiwara
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (510K)]
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04DJ07 : Voltage Switching Technique for Detecting Nuclear Spin Polarization in a Quantum Dot
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Ryo Takahashi, Kimitoshi Kono, Seigo Tarucha, and Keiji Ono
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (257K)]
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04DJ08 : Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement
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Tetsufumi Tanamoto
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (155K)]
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04DJ09 : Measurement of Electron Spin States in a Semiconductor Quantum Well Using Tomographic Kerr Rotation
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Takahiro Inagaki, Hideo Kosaka, Yoshiaki Rikitake, Hiroshi Imamura, Yasuyoshi Mitsumori, and Keiichi Edamatsu
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (148K)]
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04DJ10 : Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors
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Kai-Tak Lam, Sai-Kong Chin, Da Wei Seah, S. Bala Kumar, and Gengchiau Liang
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (544K)]
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04DJ11 : Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors
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Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, and Takashi Ito
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (443K)]
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04DJ12 : Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors
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Woo Young Choi
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (123K)]
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04DJ13 : Suppression of Critical Current in Submicron Intrinsic Josephson Junction Fabricated in a Bi2Sr2Ca2Cu3O10+δ Single Crystal Whisker
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Shrikant Saini, Gui Shik Kim, and Sang-Jae Kim
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (249K)]
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04DJ14 : Quantum Chemistry Study of Surface Structure Effects on Secondary Electron Emission in MgO Protecting Layers for Plasma Displays
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Kazumi Serizawa, Hiroaki Onuma, Hiromi Kikuchi, Kazuma Suesada, Masaki Kitagaki, Itaru Yamashita, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Hiroshi Kajiyama, and Akira Miyamoto
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (311K)]
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04DJ15 : Transient Current Study on Pt/TiO2-x/Pt Capacitor
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Ni Zhong, Hisashi Shima, and Hiro Akinaga
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (133K)]
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Organic materials science, device physics, and applications
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04DK01 : Current Reduction Mechanism in Organic Thin Film Transistors
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Yoshinori Ishikawa, Yasuo Wada, Ken Tsutsui, and Toru Toyabe
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (147K)]
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04DK02 : Temperature Dependence of Electrical Properties of Ambipolar Organic Transistors Based on F16CuPc/α-Sexithiophene p–n Heterojunction
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Rongbin Ye, Mamoru Baba, Koji Ohta, Takanori Suzuki, and Kunio Mori
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (137K)]
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04DK03 : High-Speed Operation of Step-Edge Vertical-Channel Organic Transistors with Pentacene and 6,13-Bis(triisopropyl-silylethynyl) Pentacene
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Kazuhiro Kudo, Tomoki Takano, Hiroshi Yamauchi, Masaaki Iizuka, and Masakazu Nakamura
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (284K)]
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04DK04 : Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer
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Wei Ou-Yang, Xiangyu Chen, Martin Weis, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (268K)]
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04DK05 : Electron Injection into Pentacene Field-Effect Transistor Observed by Time-Resolved Optical Second Harmonic Generation Imaging
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Takaaki Manaka, Motoharu Nakao, Fei Liu, Martin Weis, and Mitsumasa Iwamoto
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (238K)]
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04DK06 : Electric Double Layer Gate Field-Effect Transistors Based on Si
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Takashi Yanase, Toshihiro Shimada, and Tetsuya Hasegawa
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (273K)]
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04DK07 : Study of Organic Field-Effect Transistors Using Charge Modulation Spectroscopy: Behavior of Injected Carriers
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Ryo Miyazawa, Dai Taguchi, Martin Weis, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (207K)]
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04DK08 : Organic Thin-Film Transistors with Tailored Liquid Sources of HfO2 as a High-κ Insulator
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Ryota Nishizawa, Shigeki Naka, Hiroyuki Okada, Kazuyuki Suzuki, and Kazumi Kato
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (266K)]
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04DK09 : Development of Field-Effect Transistor-Type Photorewritable Memory Using Photochromic Interface Layer
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Manabu Yoshida, Kouji Suemori, Sei Uemura, Satoshi Hoshino, Noriyuki Takada, Takehito Kodzasa, and Toshihide Kamata
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (196K)]
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04DK10 : Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions
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Chun-Yuan Huang, Yan-Kuin Su, Chiao-Yang Cheng, M. V. Madhava Rao, Ying-Chih Chen, Tsung-Syun Huang, Ten-Chin Wen, and Tzung-Fang Guo
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (205K)]
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04DK11 : Front-Light Source Using Inverted Organic Light-Emitting Diodes with Microcathode Arrays
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Kohei Urata, Shigeki Naka, and Hiroyuki Okada
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (236K)]
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04DK12 : Enhancing Efficiency of Organic Light-Emitting Diodes Using a Carbon-Nanotube-Doped Hole Injection Layer
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Shui-Hsiang Su, Wang-Ta Chiang, Cheng-Chieh Hou, Lien-Cheng Kao, and Meiso Yokoyama
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (527K)]
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04DK13 : Development of Computational Method for Analysis of Carrier Transfer in Light-Emitting Polymers
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Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Ai Suzuki, Ryuji Miura, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Mark C. Williams, and Akira Miyamoto
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (567K)]
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04DK14 : Increasing the Fill Factor and Power Conversion Efficiency of Polymer Photovoltaic Cell Using V2O5/CuPc as a Buffer Layer
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Wang-Ta Chiang, Shui-Hsiang Su, Yan-Fu Lin, and Meiso Yokoyama
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (330K)]
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04DK15 : Organic Electronics: Relaxation Time Controlled Devices
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Martin Weis, Dai Taguchi, Takaaki Manaka, and Mitsumasa Iwamoto
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (238K)]
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04DK16 : Fabrication of Electrophoretic Display Driven by Membrane Switch Array
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Kazuo Senda and Hiroaki Usui
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (467K)]
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04DK17 : Gas Adsorption Properties of Fluorocarbon Thin Films Prepared Using Three Different Types of RF Magnetron Sputtering Systems
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Satoru Iwamori, Norihiko Hasegawa, Satoshi Yano, and Kazutoshi Noda
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (258K)]
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04DK18 : Adsorption Properties of Thin Films Prepared by RF Sputtering with a Poly(biphenyltetracarboxylic dianhydride–paraphenylene diamine) Polyimide Target
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Satoru Iwamori, Satoshi Yano, Ryousuke Sugimoto, Akihiro Uemura, Hiroyuki Matsumoto, and Kazutoshi Noda
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (177K)]
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04DK19 : Oriented Growth of Sexithiophene Induced by Edge of Metal Electrodes
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Susumu Ikeda, Yasuo Wada, and Koichiro Saiki
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (419K)]
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04DK20 : Single-Crystal Growth and Charge Transport Properties of an Alternating Co-Oligomer Composed of Thiophene and Phenylene Rings
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Takeshi Yamao, Yoshihiro Nishimoto, Kohei Terasaki, Hiroshi Akagami, Toshifumi Katagiri, Shu Hotta, Midori Goto, Reiko Azumi, Masamitsu Inoue, Musubu Ichikawa, and Yoshio Taniguchi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (392K)]
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04DK21 : Effect of Self-Assembled Monolayer Modification on Indium–Tin Oxide Surface for Surface-Initiated Vapor Deposition Polymerization of Carbazole Thin Films
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Yuya Umemoto, Seong-Ho Kim, Rigoberto C. Advincula, Kuniaki Tanaka, and Hiroaki Usui
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (224K)]
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04DK22 : Alignment Properties of Liquid Crystal Molecules under AC and DC Voltage Application Studied by Surface Plasmon Resonance and Optical Waveguide Spectroscopy
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Aya Ikarashi, Akira Baba, Kazunari Shinbo, Keizo Kato, and Futao Kaneko
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (653K)]
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04DK23 : Effects of an Electric Field and a Solvent during Thermal Treatment in Film Formation of Poly(vinylidene fluoride–tetrafluoroethylene)
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Jong-Hyeon Jeong, Chiharu Kimura, Hidemitsu Aoki, and Takashi Sugino
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (201K)]
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04DK24 : Preparation of Electrospun Polymer Fibers Using a Copper Wire Electrode in a Capillary Tube
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Kazunari Shinbo, Shintaro Onozuka, Rikiya Hoshino, Yoshinori Mizuno, Yasuo Ohdaira, Akira Baba, Keizo Kato, and Futao Kaneko
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (644K)]
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04DK25 : Molecular Orientation of Poly(3-hexylthiophene)/Fullerene Composite Thin Films
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Khairul Anuar Mohamad, Natsuki Komatsu, Katsuhiro Uesugi, and Hisashi Fukuda
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (336K)]
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Micro/Nano electromechanical and bio-systems (devices)
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04DL01 : Integrated Bio-Imaging Sensor Array with Complementary Metal–Oxide–Semiconductor Cascode Source–Drain Follower
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Hirokazu Matsumoto, Junichi Tsukada, Hiroaki Ozawa, Shigeyasu Uno, Kazuo Nakazato, Nao Terasaki, Noritaka Yamamoto, Takashi Hiraga, Masako Iwai, Masae Konno, Kohsuke Ito, and Yasunori Inoue
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (339K)]
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04DL02 : Complementary Metal Oxide Semiconductor Based Multimodal Sensor for In vivo Brain Function Imaging with a Function for Simultaneous Cell Stimulation
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Ayato Tagawa, Masahiro Mitani, Hiroki Minami, Toshihiko Noda, Kiyotaka Sasagawa, Takashi Tokuda, and Jun Ohta
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (409K)]
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04DL03 : Implantable Image Sensor with Light Guide Array Plate for Bioimaging
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Kiyotaka Sasagawa, Masahiro Mitani, Tetsuya Sugiyama, Toshihiko Noda, Takashi Tokuda, and Jun Ohta
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (421K)]
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04DL04 : Progressive-Type Fused pH and Optical Image Sensor
-
Hirokazu Nakazawa, Makoto Ishida, and Kazuaki Sawada
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (417K)]
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04DL05 : Light Addressable Potentiometric Sensor with Fluorine-Terminated Hafnium Oxide Layer for Sodium Detection
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Cheng-En Lue, Chao-Sung Lai, Hsin-Yu Chen, and Chia-Ming Yang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (242K)]
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04DL06 : Integration of Microcoil Magnetic Manipulation with High-Sensitivity Complementary Metal–Oxide–Semiconductor Photosensor Detection in Bio-Analyses
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Chih-Yang Chen, Chrong-Jung Lin, and Ya-Chin King
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (757K)]
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04DL07 : Detection of 8 nm Diameter Superparamagnetic Beads by Magnetically-Induced Manipulation of Micrometer-Sized Magnetic Beads: A Novel Protocol for Magnetically-Labeled Biosensing
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Yoshitaka Morimoto, Tsukasa Takamura, Sang Yoon Park, Satoshi Sakamoto, Shintaro Kawata, Hiroshi Handa, and Adarsh Sandhu
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (226K)]
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04DL08 : Actuation of Magnetic Beads on a Complementary Metal–Oxide–Semiconductor Chip for Biological Applications
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Tomohiro Ishikawa, Fumie Kaneko, and Koh Johguchi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (270K)]
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04DL09 : Selective Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators
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Masataka Fukuyama, Shinya Yamatogi, Hao Ding, Mizue Nishida, Chika Kawamoto, Yoshiteru Amemiya, Takeshi Ikeda, Tomohide Noda, Seiji Kawamoto, Kazuhisa Ono, Akio Kuroda, and Shin Yokoyama
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (948K)]
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04DL10 : Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors
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Cheng-En Lue, Chao-Sung Lai, Jer-Chyi Wang, Ching-Mie Wu, and Chia-Ming Yang
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (162K)]
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04DL11 : Design and Fabrication of Complementary Metal–Oxide–Semiconductor Sensor Chip for Electrochemical Measurement
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Tomoyuki Yamazaki, Takaaki Ikeda, Yoshiko Kano, Hidekuni Takao, Makoto Ishida, and Kazuaki Sawada
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (308K)]
[Buy This Article]
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04DL12 : A Real-Time Monitoring System Using a Multimodal Sensor with an Electrical Conductivity Sensor and a Temperature Sensor for Cow Health Control
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Masato Futagawa, Taichi Iwasaki, Mitsuyoshi Ishida, Keita Kamado, Makoto Ishida, and Kazuaki Sawada
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (242K)]
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04DL13 : Radio Frequency Identification Sensor Chips with Anticollision Algorithm for Simultaneous Detection of Multiple DNA Targets
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Yoshiaki Yazawa, Tadashi Oonishi, Kazuki Watanabe, Ryo Nemoto, and Akiko Shiratori
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (378K)]
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04DL14 : Multichannel Biosensing and Stimulation LSI Chip Using 0.18 µm Complementary Metal–Oxide–Semiconductor Technology
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Masaya Yamaguchi, Akiyoshi Shimada, Keiichi Torimitsu, and Nobuhiko Nakano
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (373K)]
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04DL15 : Self-Spreading Supported Lipid Bilayer Passing through Single Nanogap Structure: Effect of Position of Dyes in Lipid Molecules
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Yoshiaki Kashimura, Kazuaki Furukawa, and Keiichi Torimitsu
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (533K)]
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04DL16 : Novel Si Nanodisk Fabricated by Biotemplate and Defect-Free Neutral Beam Etching for Solar Cell Application
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Chi-Hsien Huang, Makoto Igarashi, Susumu Horita, Masaki Takeguchi, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, and Seiji Samukawa
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (323K)]
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04DL17 : In situ Measurement of Combustion Gas Using Terahertz Time Domain Spectroscopy Setup for Gas Phase Spectroscopy and Measurement of Solid Sample
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Takeshi Uno and Hitoshi Tabata
Published April 20, 2010 (7 pages)
[Abstract]
[Full Text PDF : (457K)]
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04DL18 : Contrast Enhancement of Wavelength-Selective Detection of Mid-Infrared Using Localized Atmospheric-Pressure Plasma Treatment
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Katsuya Masuno, Kohji Tashiro, Masaru Hori, Shinya Kumagai, and Minoru Sasaki
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (926K)]
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04DL19 : Novel Design for Optical Scanner with Piezoelectric Film Deposited by Metal Organic Chemical Vapor Deposition
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Hirokazu Matsuo, Yusuke Kawai, and Masayoshi Esashi
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (449K)]
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04DL20 : Plasma-Induced Deterioration of Mechanical Characteristics of Microcantilever
-
Maju Tomura, Chi-Hsien Huang, Yusuke Yoshida, Takahito Ono, Satoshi Yamasaki, and Seiji Samukawa
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (206K)]
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04DL21 : Lead Zirconate Titanate Acoustic Energy Harvester Proposed for Microelectromechanical System/IC Integrated Systems
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Shigeki Shinoda, Takahiro Tai, Hisanori Itoh, Tomohisa Sugou, Hirohide Ichioka, Shu Kimura, and Yasushiro Nishioka
Published April 20, 2010 (5 pages)
[Abstract]
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Spintronic materials and devices
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04DM01 : Electrical Detection of Propagating Spin Waves Controlled by a Local Magnetic Field Induced by a DC Current
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Lihui Bai, Makoto Kohda, and Junsaku Nitta
Published April 20, 2010 (4 pages)
[Abstract]
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04DM02 : Spin–Orbit Interaction in an In0.53Ga0.47As/In0.7Ga0.3As Shallow Two-Dimensional Electron Gas Located 5 nm below InP Surface Barrier
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Makoto Kohda, Toshiya Shibata, and Junsaku Nitta
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (213K)]
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04DM03 : Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells
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Sotaro Izumi, Shin-Ichiro Gozu, Teruo Mozume, Yu Saeki, Takao Nukui, and Atsushi Tackeuchi
Published April 20, 2010 (3 pages)
[Abstract]
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04DM04 : CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio
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Kotaro Mizunuma, Shoji Ikeda, Hiroyuki Yamamoto, Hua Dong Gan, Katsuya Miura, Haruhiro Hasegawa, Jun Hayakawa, Kenchi Ito, Fumihiro Matsukura, and Hideo Ohno
Published April 20, 2010 (4 pages)
[Abstract]
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04DM05 : Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory
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Shoun Matsunaga, Masanori Natsui, Kimiyuki Hiyama, Tetsuo Endoh, Hideo Ohno, and Takahiro Hanyu
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (180K)]
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04DM06 : The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits
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Tetsuo Endoh, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Masashi Kamiyanagi, Haruhiro Hasegawa, Takahiro Hanyu, and Hideo Ohno
Published April 20, 2010 (5 pages)
[Abstract]
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04DM07 : Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements
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Sojeong Kim, Seungjun Lee, and Hyungsoon Shin
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (605K)]
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Applications of nanotubes and nanowires
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04DN01 : Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
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Honghua Xu, Xiaoyan Liu, Gang Du, Yuning Zhao, Yuhui He, Chun Fan, Ruqi Han, and Jinfeng Kang
Published April 20, 2010 (5 pages)
[Abstract]
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04DN02 : Silicon Nanowire Array Solar Cell Prepared by Metal-Induced Electroless Etching with a Novel Processing Technology
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Han-Don Um, Jin-Young Jung, Hong-Seok Seo, Kwang-Tae Park, Sang-Won Jee, S. A. Moiz, and Jung-Ho Lee
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (316K)]
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04DN03 : Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal–Oxide–Semiconductor Field Effect Transistors
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Seongjae Cho, Hee-Sauk Jhon, Jung Hoon Lee, Se Hwan Park, Hyungcheol Shin, and Byung-Gook Park
Published April 20, 2010 (7 pages)
[Abstract]
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04DN04 : Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors
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Hideki Minari and Nobuya Mori
Published April 20, 2010 (4 pages)
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04DN05 : Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor
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Tatsuhiro Numata, Shigeyasu Uno, Kazuo Nakazato, Yoshinari Kamakura, and Nobuya Mori
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (175K)]
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04DN06 : Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique
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Rock-Hyun Baek, Chang-Ki Baek, Sung-Woo Jung, Yun Young Yeoh, Dong-Won Kim, Jeong-Soo Lee, Dae M. Kim, and Yoon-Ha Jeong
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (473K)]
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04DN07 : Shape Effects on the Performance of Si and Ge Nanowire Field-Effect Transistors Based on Size Dependent Bandstructure
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Chee Shin Koong, Ganesh Samudra, and Gengchiau Liang
Published April 20, 2010 (7 pages)
[Abstract]
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04DN08 : Molecular Dynamics Simulation of Heat Transport in Silicon Nano-structures Covered with Oxide Films
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Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, and Takanobu Watanabe
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (251K)]
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04DN09 : Electron–Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
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Junichi Hattori, Shigeyasu Uno, Nobuya Mori, and Kazuo Nakazato
Published April 20, 2010 (6 pages)
[Abstract]
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04DN10 : Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates
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Der-Ming Kuo, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chih Tsai, Wen-I Hsu, Wei-Chi Lee, Pei-Ren Wang, and Chih-Ren Tseng
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (637K)]
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04DN11 : Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors
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Takashi Uchino, Greg N. Ayre, David C. Smith, John L. Hutchison, C. H. de Groot, and Peter Ashburn
Published April 20, 2010 (4 pages)
[Abstract]
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04DN12 : Electron Transport Properties in Photo and Supersonic Wave Irradiated C60 Fullerene Nano-Whisker Field-Effect Transistors
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Tatsuya Doi, Kyouhei Koyama, Yasuto Chiba, Hajime Tsuji, Misaki Ueno, Shih-Ren Chen, Nobuyuki Aoki, Jonathan Paul Bird, and Yuichi Ochiai
Published April 20, 2010 (4 pages)
[Abstract]
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Power electronics
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04DP01 : Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
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Isao Takahashi, Noritaka Usami, Kentaro Kutsukake, Kohei Morishita, and Kazuo Nakajima
Published April 20, 2010 (4 pages)
[Abstract]
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04DP02 : First-Principles Calculations on Σ3 Grain Boundary Transition Metal Impurities in Multicrystalline Silicon
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Ambigapathy Suvitha, Natarajan Sathiyamoorthy Venkataramanan, Ryoji Sahara, Hiroshi Mizuseki, and Yoshiyuki Kawazoe
Published April 20, 2010 (4 pages)
[Abstract]
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04DP03 : A New Approach Using Backside Scatterers for Efficiency Enhancement in Thin Si Solar Cells
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Akihiro Yanai, Ryuzo Ichikawa, Yasuhiko Ishikawa, and Kazumi Wada
Published April 20, 2010 (4 pages)
[Abstract]
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04DP04 : Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
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Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Kazuhiro Shiba, Hiroyuki Takemoto, and Hideki Matsumura
Published April 20, 2010 (3 pages)
[Abstract]
[Full Text PDF : (205K)]
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04DP05 : Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
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Yuta Matsumoto, Dai Tsukada, Ryo Sasaki, Michitoshi Takeishi, Takanobu Saito, Takashi Suemasu, Noritaka Usami, and Masato Sasase
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (431K)]
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04DP06 : Lift-Off Process for Flexible Cu(In,Ga)Se2 Solar Cells
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Takashi Minemoto, Yasuhiro Abe, Takaya Anegawa, Shintaro Osada, and Hideyuki Takakura
Published April 20, 2010 (3 pages)
[Abstract]
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04DP07 : Electronic Structure and Characteristics of Chemical Bonds in CuInSe2, CuGaSe2, and CuAlSe2
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Tsuyoshi Maeda and Takahiro Wada
Published April 20, 2010 (6 pages)
[Abstract]
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04DP08 : Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
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Hidetoshi Suzuki, Makoto Inagaki, Takahiko Honda, Yoshio Ohshita, Nobuaki Kojima, and Masafumi Yamaguchi
Published April 20, 2010 (3 pages)
[Abstract]
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04DP09 : High-Performance Transparent Conducting Ga-Doped ZnO Films Deposited by RF Magnetron Sputter Deposition
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Jun Kwan Kim, Jae Min Lee, Jung Wook Lim, Je Ha Kim, and Sun Jin Yun
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (258K)]
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04DP10 : Modeling of Dye-Sensitized Solar Cells Based on TiO2 Electrode Structure Model
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Mari Onodera, Kei Ogiya, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, and Akira Miyamoto
Published April 20, 2010 (6 pages)
[Abstract]
[Full Text PDF : (496K)]
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04DP11 : A Theoretical Study on Initial Processes of Li-Ion Transport at the Electrolyte/Cathode Interface: A Quantum Chemical Molecular Dynamics Approach
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Tomaru Ogawa, Masayuki Miyano, Yasuhiro Suzuki, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, and Akira Miyamoto
Published April 20, 2010 (6 pages)
[Abstract]
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04DP12 : Analysis of Hot Carrier Degradation of Lateral Double-Diffused Metal–Oxide–Semiconductor under Gate Pulse Stress
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Keiichi Furuya, Tetsuya Nitta, Toshiharu Katayama, Kenichi Hatasako, Takashi Kuroi, and Shigeto Maegawa
Published April 20, 2010 (5 pages)
[Abstract]
[Full Text PDF : (235K)]
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04DP13 : Lateral Back-to-Back Diode for Low-Capacitance Transient Voltage Suppressor
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Sheng-Huei Dai, Jeng-Jie Peng, Chia-Cheng Chen, Chrong-Jung Lin, and Ya-Chin King
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (546K)]
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04DP14 : Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
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Hongyao Long, Mark R. Sweet, Luther-King Ngwendson, and E. M. Sankara Narayanan
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (276K)]
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04DP15 : Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors
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Ryuichi Sugie, Takeshi Mitani, Masanobu Yoshikawa, Yoshiharu Iwata, and Ryohei Satoh
Published April 20, 2010 (4 pages)
[Abstract]
[Full Text PDF : (168K)]
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