JJAP Online

Jpn. J. Appl. Phys. Vol. 5 (1966)
No. 9, 15 September 1966


747-751 : A Note on Barkhausen Noise Induced by an External Stress in a Ferrite Head in a Video Tape Recorder
Yoshio Tawara and Haruhumi Senn\=o
752-755 : Photocurrent and Thermal Release Time Studies of Uranium Dioxide
Shoji Iida
756-763 : On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
Chusuke Munakata
764-777 : Electron Diffraction at Low Temperature II. Radial Distribution Analysis of Metastable Structure of Metal Films Prepa ed by Low Temperature Condensation
Satoru Fujime
778-787 : Electron Diffraction at Low Temperature III. Radial Distribution Analysis of Metastable Structure of Metal Films Prepared by Low Temperature Condensation
Satoru Fujime
788-795 : Electron Microscopy of Thin Twins and Stacking Faults
Hiroshi Fujita and Y\=oz\=o Kawasaki
796-806 : X-Ray Microdiffraction with a Scanning X-Ray Microanalyzer
Takeo Ichinokawa
807-813 : Coherence of Light from Random Medium
Takeomi Suzuki and Ryuichi Hioki
814-817 : Speckled Diffraction Pattern and Source Effect on Resolution Limit in Holography
Takeomi Suzuki and Ryuichi Hioki
818-823 : Dynamic Mechanical Properties of Polyoxymethylene I
Kyosuke Miki, Yukimoto Yokokawa, Kunio Hikichi and Jiro Furuichi
824-833 : Reactions of New Thermite Systems
Nobuzo Terao and Henri Baroen

Short Notes

834-834 : Processing of V3Ga Wires and Their Superconducting Properties
Kyoji Tachikawa and Yoshiaki Tanaka
835-835 : Temperature Dependence of Ultrasonic Amplification in Cadmium Sulfide
Yoshimitsu Kikuchi, Noriyoshi Chubachi and Kazumoto Iinuma
836-837 : Distribution of Normal Region after S-N Transition in a Superconducting Magnet
Susumu Shimamoto and Kazuhiro Ushio
837-838 : Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes
Yoshitaka Furukawa and Yoshio Ishibashi
838-839 : DC Electroluminescence in Thin Films of Zinc Sulfide
Teruko Soeya and Yoshihiro Kimura
839-840 : Diffusion of Li in InSb
Takeo Takabatake, Hiroyuki Ikari and Y\=oichi Uyeda
840-841 : Improved Single-Probe Technique in Flames
Tetsui Yanagi
841-842 : Effects of Aluminum Electrode and Hydrogen Gas during Heat Treatments on MOS Structure
Heiz\=o Tokutaka, Sh\=uji Kubo and Kenji Akiyama
843-843 : Frequency of Microwave Oscillation in GaAs p-n Junctions
Sadahiko Yamashita, Takao Kajiwara, Toshi Abe and Tomoyasu Nakano
844-845 : Investigation of Si-Ta2O5 System Prepared by Reactive Sputtering
Toyoki Takemoto, Takashi Ishihara and Kenji Akiyama
845-846 : Optical Gain and Losses of Solution-Grown Diffused GaAs Injection Lasers
Wataru Susaki
846-846 : Epitaxy of Body-Centred Cubic Metals Evaporated onto Cleavage Faces of Rocksalt
Shuichi Tagawa, Shozo Ino and Shiro Ogawa
847-848 : Helical Dislocations and Dislocation Loops in Silicon Induced by Platinum Diffusion
Yozo Tokumaru and Makoto Kikuchi

Errata

849-849 : Low Electron Density Measurements of Transient Plasmas by Optical Interferometers
Susumu Takeda and Kazuo Minami

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