JJAP Online
Jpn. J. Appl. Phys. Vol. 5 (1966)
No. 9, 15 September 1966
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747-751 : A Note on Barkhausen Noise Induced by an External Stress in a Ferrite Head in a Video Tape Recorder
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Yoshio Tawara and Haruhumi Senn\=o
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752-755 : Photocurrent and Thermal Release Time Studies of Uranium Dioxide
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Shoji Iida
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756-763 : On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
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Chusuke Munakata
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764-777 : Electron Diffraction at Low Temperature II. Radial Distribution Analysis of Metastable Structure of Metal Films Prepa ed by Low Temperature Condensation
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Satoru Fujime
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778-787 : Electron Diffraction at Low Temperature III. Radial Distribution Analysis of Metastable Structure of Metal Films Prepared by Low Temperature Condensation
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Satoru Fujime
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788-795 : Electron Microscopy of Thin Twins and Stacking Faults
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Hiroshi Fujita and Y\=oz\=o Kawasaki
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796-806 : X-Ray Microdiffraction with a Scanning X-Ray Microanalyzer
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Takeo Ichinokawa
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807-813 : Coherence of Light from Random Medium
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Takeomi Suzuki and Ryuichi Hioki
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814-817 : Speckled Diffraction Pattern and Source Effect on Resolution Limit in Holography
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Takeomi Suzuki and Ryuichi Hioki
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818-823 : Dynamic Mechanical Properties of Polyoxymethylene I
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Kyosuke Miki, Yukimoto Yokokawa, Kunio Hikichi and Jiro Furuichi
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824-833 : Reactions of New Thermite Systems
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Nobuzo Terao and Henri Baroen
Short Notes
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834-834 : Processing of V3Ga Wires and Their Superconducting Properties
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Kyoji Tachikawa and Yoshiaki Tanaka
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835-835 : Temperature Dependence of Ultrasonic Amplification in Cadmium Sulfide
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Yoshimitsu Kikuchi, Noriyoshi Chubachi and Kazumoto Iinuma
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836-837 : Distribution of Normal Region after S-N Transition in a Superconducting Magnet
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Susumu Shimamoto and Kazuhiro Ushio
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837-838 : Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes
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Yoshitaka Furukawa and Yoshio Ishibashi
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838-839 : DC Electroluminescence in Thin Films of Zinc Sulfide
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Teruko Soeya and Yoshihiro Kimura
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839-840 : Diffusion of Li in InSb
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Takeo Takabatake, Hiroyuki Ikari and Y\=oichi Uyeda
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840-841 : Improved Single-Probe Technique in Flames
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Tetsui Yanagi
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841-842 : Effects of Aluminum Electrode and Hydrogen Gas during Heat Treatments on MOS Structure
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Heiz\=o Tokutaka, Sh\=uji Kubo and Kenji Akiyama
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843-843 : Frequency of Microwave Oscillation in GaAs p-n Junctions
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Sadahiko Yamashita, Takao Kajiwara, Toshi Abe and Tomoyasu Nakano
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844-845 : Investigation of Si-Ta2O5 System Prepared by Reactive Sputtering
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Toyoki Takemoto, Takashi Ishihara and Kenji Akiyama
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845-846 : Optical Gain and Losses of Solution-Grown Diffused GaAs Injection Lasers
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Wataru Susaki
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846-846 : Epitaxy of Body-Centred Cubic Metals Evaporated onto Cleavage Faces of Rocksalt
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Shuichi Tagawa, Shozo Ino and Shiro Ogawa
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847-848 : Helical Dislocations and Dislocation Loops in Silicon Induced by Platinum Diffusion
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Yozo Tokumaru and Makoto Kikuchi
Errata
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849-849 : Low Electron Density Measurements of Transient Plasmas by Optical Interferometers
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Susumu Takeda and Kazuo Minami
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Copyright (C) 1966 Publication Board, Japanese Journal of Applied Physics