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Japanese Journal of Applied Physics

Volume 50, Number 10, October 2011

Special Issue: Dielectric Thin Films for Future Electron Devices: Science and Technology

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Editors
Foreword

High-k/Metal gate

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10PA01 : La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (742K)]
10PA02 : Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
Takashi Yamamoto, Shingo Ogawa, Hiroaki Arimura, Masayuki Saeki, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (881K)]
10PA03 : Effect of Y Content in (TaC)1-xYx Gate Electrodes on Flatband Voltage Control for Hf-Based High-k Gate Stacks
Pattira Homhuan, Toshihide Nabatame, Toyohiro Chikyow, and Sukkaneste Tungasmita
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (806K)]
10PA04 : Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm
Miyuki Kouda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (648K)]
10PA05 : Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer
Daisuke Kitayama, Toru Kubota, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (927K)]
10PA06 : Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes
Miyuki Kouda, Kenji Ozawa, Kuniyuki Kakushima, Parhat Ahmet, Hiroshi Iwai, Yuji Urabe, and Tetsuji Yasuda
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (484K)]

Reliability and low frequency noise

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10PB01 : Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Hyuk-Min Kwon, Jung-Deuk Bok, In-Shik Han, Sang-Uk Park, Yi-Jung Jung, Jae-Hyung Jang, Sung-Yong Ko, Won-Mook Lee, Ga-Won Lee, and Hi-Deok Lee
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (982K)]
10PB02 : Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2 Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors
Takeo Matsuki, Ranga Hettiarachchi, Wei Feng, Kenji Shiraishi, Keisaku Yamada, and Kenji Ohmori
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (534K)]
10PB03 : Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide
In-Shik Han, Hyuk-Min Kwon, Jung-Deuk Bok, Sung-Kyu Kwon, Yi-Jung Jung, Woon-il Choi, Deuk-Sung Choi, Min-Gyu Lim, Yi-Sun Chung, Jung-Hwan Lee, Ga-Won Lee, and Hi-Deok Lee
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (727K)]
10PB04 : Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations
Ranga Hettiarachchi, Takeo Matsuki, Wei Feng, Keisaku Yamada, and Kenji Ohmori
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (1267K)]
10PB05 : Highly Reliable Radical SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing
Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Published October 20, 2011 (7 pages)
[Abstract] [Full Text PDF (1186K)]
10PB06 : Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
Sang-Uk Park, Hyuk-Min Kwon, In-Shik Han, Yi-Jung Jung, Ho-Young Kwak, Woon-Il Choi, Man-Lyun Ha, Ju-Il Lee, Chang-Yong Kang, Byoung-Hun Lee, Raj Jammy, and Hi-Deok Lee
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (491K)]

Device performance and its control

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10PC01 : p-Type Tunneling Field-Effect Transistors on (100)- and (110)-Oriented Si Substrates
Min Hung Lee, Bin-Fong Hsieh, Tong-Han Wu, and Shu Tong Chang
Published October 20, 2011 (3 pages)
[Abstract] [Full Text PDF (516K)]
10PC02 : Improvement in Characteristics of Low-Temperature Polycrystalline Silicon Thin Film Transistors with High-Efficiency and Low-Damage N2 Plasma Pretreatment
Ching-Lin Fan, Yi-Yan Lin, and Shou-Kuan Wang
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (504K)]

High-k/III–V

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10PD01 : Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal–Oxide–Semiconductor Capacitors
Akihiro Ohtake, Noriyuki Miyata, Yuji Urabe, and Tetsuji Yasuda
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (569K)]
10PD02 : Study of High-κ/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy
Koji Yamashita, Yuuya Numajiri, Masato Watanabe, Kuniyuki Kakushima, Hiroshi Iwai, and Hiroshi Nohira
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (1209K)]
10PD03 : Capacitance–Voltage Characterization of La2O3 Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
Dariush Zade, Takashi Kanda, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Nohira, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (763K)]

Interface reaction of Ge systems

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10PE01 : X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide
Akio Ohta, Tomohiro Fujioka, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki
Published October 20, 2011 (6 pages)
[Abstract] [Full Text PDF (979K)]
10PE02 : Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure Using Radical Nitridation Technique
Kimihiko Kato, Shinya Kyogoku, Mitsuo Sakashita, Wakana Takeuchi, Hiroki Kondo, Shotaro Takeuchi, Osamu Nakatsuka, and Shigeaki Zaima
Published October 20, 2011 (7 pages)
[Abstract] [Full Text PDF (1045K)]
10PE03 : Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, and Heiji Watanabe
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (830K)]
10PE04 : Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
Sheng Kai Wang, Koji Kita, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (552K)]

Oxide physics and theory

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10PF01 : Atomic-Scale Simulations of Early Stage of Oxidation of Vicinal Si(001) Surfaces Using a Reactive Force-Field Potentials
Kyung-Han Yun, Yubin Hwang, Heechae Choi, Eung-Kwan Lee, Geunsup Yoon, Byung-Hyun Kim, and Yong-Chae Chung
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (600K)]
10PF02 : Electric Dipole at High-k/SiO2 Interface and Physical Origin by Dielectric Contact Induced Gap States
Xiaolei Wang, Kai Han, Wenwu Wang, Xueli Ma, Jinjuan Xiang, Dapeng Chen, and Jing Zhang
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (419K)]
10PF03 : Electron Accumulation in LaAlO3/SrTiO3 Interfaces by the Broken Symmetry of Crystal Field
Hayan Park, Heechae Choi, Hong-Lae Park, and Yong-Chae Chung
Published October 20, 2011 (3 pages)
[Abstract] [Full Text PDF (566K)]
10PF04 : Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality
Gerald Lucovsky, Leonardo Miotti, and Karen Paz Bastos
Published October 20, 2011 (10 pages)
[Abstract] [Full Text PDF (1864K)]
10PF05 : Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations
Che-Sheng Chung
Published October 20, 2011 (3 pages)
[Abstract] [Full Text PDF (285K)]

Process and characterization

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10PG01 : Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing
Yukinori Morita, Shinji Migita, Wataru Mizubayashi, and Hiroyuki Ota
Published October 20, 2011 (6 pages)
[Abstract] [Full Text PDF (1397K)]
10PG02 : Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor
Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, and Kouichi Ono
Published October 20, 2011 (7 pages)
[Abstract] [Full Text PDF (785K)]
10PG03 : Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
Tseng-Fu Lu, Hao-Chun Chuang, Jer-Chyi Wang, Chia-Ming Yang, Pei-Chun Kuo, and Chao-Sung Lai
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (568K)]
10PG04 : pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing
Jer-Chyi Wang, Tseng-Fu Lu, Hui-Yu Shih, Chia-Ming Yang, Chao-Sung Lai, Chyuan-Haur Kao, and Tung-Ming Pan
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (622K)]
10PG05 : Ultralow Dielectric Property of Electrospun Polylactide–Polyglycolide Nanofibrous Membranes
Shih-Jung Liu, Lung-Yi Chiou, and Jun-Yi Liao
Published October 20, 2011 (5 pages)
[Abstract] [Full Text PDF (561K)]
10PG06 : Relationship between Dipole Moment of Organic Compound Impurity in Liquid Crystal Field and Leakage Current of Liquid Crystal Cell
Ikue Kaneko, Kazuhiro Tachibana, Tatsuo Nishina, Koichiro Yonetake, and Yoshihiro Ohba
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (941K)]
10PG07 : High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor
K. Kalai Selvi, Turuvekere Sreenidhi, Nandita DasGupta, Heiner Ryssel, and Anton Bauer
Published October 20, 2011 (4 pages)
[Abstract] [Full Text PDF (539K)]

Resistance memory materials

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10PH01 : High-κ Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
Writam Banerjee, Sheikh Ziaur Rahaman, Amit Prakash, and Siddheswar Maikap
Published October 20, 2011 (6 pages)
[Abstract] [Full Text PDF (1171K)]
10PH02 : Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide
Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki
Published October 20, 2011 (6 pages)
[Abstract] [Full Text PDF (1202K)]
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