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8th Conf. (1976 Int.) Solid State Devices, Tokyo, 1976
Japanese Journal of Applied Physics
Vol. 16 (1977) Suppl. 16-1

A-0: OPENING SESSION

3-4 : Opening Address: Masaharu Aoki
5-8 : Invited : Silicon Wizardry: M. P. Lepselter and C. H. Sequin
9-16 : Invited: The Potential of Electron Beam Technology for Microfabrication: T. H. P. Chang
17-24 : Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy: B. A. Joyce and C. T. Foxon
25-28 : Invited: Integrated Optics: Amnon Yariv

A-1: PROCESS TECHNOLOGY (I)

29-36 : Invited: New Developments in Materials and Processing Aspects of Silicon Device Technology: B. E. Deal
37-42 : A New Technique for Low Concentration Diffusion of Boron into Silicon: Ginjiro Kambara, Susumu Koike, Toshio Matsuda and Morio Inoue
43-46 : Stepped Electrode Transistor: SET: Tetsushi Sakai, Yoshio Sunohara, Yutaka Sakakibara and Junichi Murota
47-52 : Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples: Nobuyoshi Natsuaki, Masao Tamura, Masanobu Miyao and Takashi Tokuyama
53-56 : Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation: Hiroshi Ishiwara and Seijiro Furukawa
57-60 : Invited: Present Status and Future Aspects of the Electron Beam Pattern Generators: J. Trotel and G. Pircher
61-66 : Invited: X-Ray Lithography: Henry I. Smith and D. C. Flanders
67-72 : New Application of Se-Ge Glasses to Silicon Microfabrication Technology: Akira Yoshikawa, Haruo Nagai and Yoshihiko Mizushima
73-80 : Glass Flow Mechanism of Phosphosilicate Glass and Its Application in MOS Devices: Norikazu Hashimoto, Yuji Yatsuda and Shimpei Mutoh

B-1: MICROWAVE DEVICES

81-88 : Invited: Recent Advances in Microwave Devices: K. W. Gray
89-92 : Submillimeter Wave Si p⁺ -p-n⁺ IMPATT Diodes: Masayuki Ino, Tadao Ishibashi and Masamichi Ohmori
93-98 : High Power, High Reliability p-n Junction GaAs IMPATT Diodes for J-Band: Kazuo Nishitani, Osamu Ishihara, Hiroshi Sawano, Takashi Ishii, Shigeru Mitsui and Hidejiro Miki
99-102 : Formation of Silicon p⁺ π pnν n⁺ Structure by Epitaxial Growth: Kazuhisa Takahashi, Saburo Takamiya, Shigeru Mitsui and Hidejiro Miki
103-106 : Ga_xIn_1-xSb Gunn Diodes: Kazuaki Segawa, Hidejiro Miki, Mutsuyuki Otsubo, Kiyoshi Shirahata and Keiji Fujibayashi
107-110 : Improvement of Planar GaAs Devices by Controlling the Properties of the Epilayer and the Epilayer-Substrate Interface: Leon Marcel Freddy Kaufmann and Klaus Heime
111-114 : Sub-Micron Gate GaAs MESFET's with Ion-Implanted Channels: Tadatoshi Nozaki and Keiichi Ohata
115-120 : A Half-Micron Gate GaAs FET Fabricated by Chemical Dry Etching: Susumu Takahashi, Fumio Murai, Hirokazu Kurono, Motohisa Hirao and Hiroshi Kodera

A-2: NEW INTEGRATED CIRCUITS

121-128 : Invited: I²L-Efficient Bipolar LSI Extension: H. H. Berger
129-134 : Invited: Vertical Injection Logic -- An Improved Structure of Integrated Injection Logic --: Takao Nakano, Yasutaka Horiba, Ko-ichi Kijima, Ki-ichiro Tanaka and Osamu Tomisawa
135-142 : Invited: Recent Development of Gunn Effect Logic Devices: Toyosaku Isobe, Shintaro Yanagisawa and Tetsuo Nakamura
143-146 : Phosphorous Buried Emitter I²L for High-Voltage Operating Circuits: Tomoyuki Watanabe, Takahiro Okabe and Minoru Nagata
147-150 : High Precision High Speed Analog/Digital LSI Techniques: Alan S. Templin and D. R. Breuer
151-156 : Static Induction Logic-A Simple Structure with Very Low Switching Energy and Very High Packing Density: Jun-ichi Nishizawa and Bogdan Maciej Wilamowski

A-3: MOSFET AND IC

157-162 : Invited: Future Trend of Static Induction Transistor and Its Application for Integrated Circuits: Jun-ichi Nishizawa
163-166 : Invited: DSA MOS Transistor and Its Integrated Circuit: Yutaka Hayashi, Toshihiro Sekigawa and Yasuo Tarui
167-172 : Fully Ion Implanted DSA MOS IC: Isao Ohkura, Masashi Ohmori, Kazuhiro Shimotori, Takao Nakano, Yutaka Hayashi and Yasuo Tarui
173-178 : Analytical Technique for the Design of DMOS Transistors: Toshiaki Masuhara and Richard S. Muller
179-184 : Grooved Gate MOSFET: Shigeru Nishimatsu, Yoshifumi Kawamoto, Hiroo Masuda, Ryoichi Hori and Osamu Minato
185-190 : Invited: Electronic Watches Using Quartz Crystal Oscillators: Tetsuro Hama
191-200 : Invited: Nonvolatile Semiconductor Memory: Yoshio Nishi and Hisakazu Iizuka
201-204 : A New Two-Terminal C-MNOS Memory Cell: Susumu Koike, Gota Kano, Akio Kashiwakura, Ginjiro Kambara and Iwao Teramoto
205-210 : Studies of Localized Charge Injection in Surface Avalanched pn Junctions: R. Amantea and R. S. Muller
211-216 : Analysis and Experimentation on FIMOS (n-channel FAMOS) Devices: T. Hagiwara, E. Takeda, M. Horiuchi, R. Kondo and Y. Itoh

A-4: CHARACTERIZATION AND HIGH POWER MOS

217-223 : Invited: Power Handling Capability of MOSFET: Minoru Nagata
223-232 : Invited: Deep Levels in GaAs and GaP: Toshiaki Ikoma, Masahiko Takikawa and Tsugunori Okumura
233-238 : Optical Compensation Profiling in Direct-Gap Epitaxial Layers: Elmar Wagner, Wolfgang Bludau and Takeshi Kamiya
239-246 : Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In_1-x Ga_xAs (x\cong0.5) for Microwave Devices: Akio Sasaki, Yoshikazu Takeda, Naoto Shikagawa and Toshinori Takagi

B-2: JOSEPHSON DEVICES

247-254 : Invited: Josephson Devices as Potential Circuit Elements in Ultra-Fast Computers: H. H. Zappe
255-260 : Dynamic Behavior of Long Josephson Junctions: Takeshi Imamura, Shinya Hasuo and Toyosaku Isobe
261-266 : Thin Film SQUID's for Magnetic Field Measurements: G. Ehnholm, T. Wiik and T. Stubb

B-3: OPTOELECTRONIC DEVICES (I)

267-270 : Characteristics of the Indium-and Gallium-Doped Silicon Infrared Sensing MOSFETS 's (IRFET's): L. Forbes, K. W. Loh and L. L. Wittmer
271-274 : Double-Junction Photosensitive Devices with High uv Responsivity: W. v. Münch
275-278 : Design and Characteristics of Low Noise and High Speed Silicon Avalanche Photodiodes: Hiroshi Kanbe, Tatsuya Kimura, Yoshihiko Mizushima and Kenji Kajiyama
279-282 : Cadmium Telluride Nuclear Radiation Detectors: P. Höschl, P. Polívka, V. Prosser, M. Sk\vrivánková and M. Vidra
283-288 : Hot Carrier-Voltaic Effect in p-n Junction and Its Application to Electron Emitters and Light Detectors: Masayoshi Umeno, Hajime Hattori, Takashi Jimbo, Yasunori Sugito and Yoshifumi Amemiya

B-4: OPTOELECTRONIC DEVICES (II)

289-298 : Invited : AlGaAs Heterostructures in Integrated Optics: Zh. I. Alferov and nameE. L. Portnoy
297-304 : Invited: IV-VI Narrow Gap Semiconductors and Devices: J. Hesse
305-306 : Invited: Research on Optical Communication Devices in Japan: Seiji Ohara
307-310 : Electroluminescent-Diode Pumped Lithium Neodymium Tetraphosphate Lasers: Masatoshi Saruwatari and Tatsuya Kimura
311-316 : Improved Design and High-Frequency Modulation Experiment of the Coupled-Waveguide Optical Modulator with p-n Junction: Keikichi Hirose, Kunio Tada and Hisaharu Yanagawa
317-320 : Optical Waveguiding and Electrooptic Modulation in Ion Implanted CdTe: Tadashi Nishimura, Hiroaki Aritome, Kohzoh Masuda and Susumu Namba
321-324 : Phase Tuning in Optical Directional Coupler: Osamu Mikami, Juichi Noda and Yoshiro Ohmachi
325-328 : Xerographic Development of Images Stored in PLZT FE/PC Devices: Akio Kumada, Kunio Yamashita and Shin Sato
329-332 : Electrochromic Cells Using Some Transition Metal Complexes: Kenji Murao, Mikio Sato and Nobuhiko Shito
333-338 : Surface States and Barrier Height at Metal-GaAs Interface: M. S. Tyagi

C-1: BUBBLE DEVICES

339-340 : Invited: Magnetic Bubbles-Status and Projections: J. L. Archer
341-346 : Invited: Magnetic Bubble Devices: T. Furuoya
347-350 : Bias Field Margin Degradation due to Long-term Memory Operation in 16 kbit Bubble Memory Chips: Nakahiko Yamaguchi
351-356 : Fabrication of 3 µm Bubble 80 kbit Chips: Shunsuke Matsuyama, Kohji Igarashi, Teiji Majima and Shobu Orihara

S-1: SYMPOSIUM ``OPTOELECTRONICS''

357-358 : Invited: Monolithic Optical Integration: An Approach for New Devices: F. K. Reinhart
359-360 : Invited: New Materials for Electroluminescent Devices: J. I. Pankove
361-364 : Invited: Degradation in Optoelectronic Devices: Yasuo Nannichi

A-5: CCD

365-372 : Invited: Solid State Image Sensors Using the Charge Transfer Principle: J. G. van Santen
373-378 : 64 Stage BCD (Bulk Charge-Transfer Device) Analog Memory with Differential Integrated Clock Pulse Generator: Shinya Ohba, Masakazu Aoki, Kikuo Dota, Norikazu Hashimoto and Masaharu Kubo
379-382 : CCD with Meander Channel: Osamu Ohtsuki, Hideo Sei, Kunihiro Tanikawa and Yoshihiro Miyamoto
383-386 : A New Multiphase Electrode-per-bit Structure for CCD Memory: Susumu Kohyama, Kanji Hirabayashi, Isao Nojima, Wallace E. Tchon, Ben R. Elmer and Anthony J. Denboer
387-390 : A New Weighting Method for CCD Analog Sampled Filter: Takaaki Baba, Teruo Kitani, Reiichi Sasaki, Yoshihiro Hosokawa, Masakazu Akiyama and Tadahiro Nakajima
391-398 : An Input-Weighted CCD Transversal Filter: Tatsuo Sakaue, Mineo Iwasawa and Katsuo Matsushima

A-6: SOLAR CELLS

399-406 : Invited: Status of Silicon Solar Cell Technology: H. W. Brandhorst, Jr.
407-412 : Evaluation of Si Ribbon Crystals for Solar Cells: Akimichi Hojo, Yasuo Ikawa, Toshiro Matsui and Masashi Nakagawa
413-416 : Dendritic Growth of Silicon Thin Films on Alumina Ceramic and Their Application to Solar Cells: Tadashi Saitoh, Terunori Warabisako, Haruo Itoh, Nobuo Nakamura, Hiroshi Tamura, Shigekazu Minagawa and Takashi Tokuyama
417-422 : Invited: Solar Energy for Residential Use: I. Arnold Lesk
423-426 : Analysis of Silicon Solar Cells with Multi-Layer Structure: Takeshi Matsushita, Masayuki Miyake and Takayoshi Mamine
427-434 : Photovoltaic Characteristics of Photocells by lonized-Cluster Beam Deposition and Epitaxy: Toshinori Takagi, Isao Yamada, Akio Sasaki, Shigeo Itoh, Haruhisa Mori, Hiroaki Morimoto, Mitsuharu Kodama and Masahide Ozawa

B-5: PROCESS TECHNOLOGY (II)

435-442 : Invited: Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy: A. Y. Cho
443-450 : Invited: Molecular Beam Epitaxy with Ionized Beam Doping: Nobutoshi Matsunaga, Mitsuru Naganuma and Kiyoshi Takahashi
451-456 : Molecular Beam Epitaxy of ZnSe and ZnTe Thin-Film Single Crystals: Takafumi Yao, Yunosuke Makita and Shigeru Maekawa
457-460 : Liquid Phase Epitaxy Apparatus for Multiple Layers Utilizing Centrifugal Forces: Elisabeth Bauser, Laurenz Schmidt, Karl Siegfried Loechner and Edeltraud Raabe
461-464 : Influence of Oxygen in Ambient Gas on LPE GaAs Layers: Hirofumi Kan, Makoto Ishh and Wataru Susaki
465-470 : Thermal Oxidation of GaAs: Fusako Koshiga and Takuo Sugano
471-474 : Influence of Temperature on the Structure and Properties of an Anodized Native GaAs Oxide: Takashi Ishii and Bert Jeppsson
475-482 : Anodic Oxidation and MOS Devices of GaAs and GaP: Toshiaki Ikoma, Hirokuni Tokuda, Hiroshi Yokomizo and Yoshio Adachi

B-6: ACOUSTIC DEVICES

483-486 : 58 MHz Surface-Acoustic-Wave TV-Intermediate-Frequency Filter Using ZnO-Sputtered Film: Tadashi Shiosaki and Akira Kawabata
487-492 : An Improved Micro-Fabrication Technique for Aluminum Electrode of Surface-Acoustic-Wave Transducers: Kiyoshi Asakawa and Katsuhiko Nishikawa
493-496 : Monolithic Elastic Surface Wave Amplifiers of Continuous Operation: Kazuhiko Yamanouchi and Kimio Shibayama
497-500 : Optical Image Memory in Slow Surface States in Germanium Read Out by Acoustic Surface Wave: Tadashi Shiosaki, Kenichi Narumiya, Takashi Yamamoto and Akira Kawabata
501-506 : Surface Acoustic Wave Memory Using Semiconductor Laser: Susumu Takada, Koitiro Hoh, Hisao Hayakawa and Yozo Tokumaru
507-508 : Invited: Surface Acoustic Wave (SAW) Devices Based on the Interaction of SAW with Electrons in Semiconductors: Yuri V. Gulyaev
509-512 : Monolithic Surface Wave Memory with Long Storage Time: Koitiro Hoh, Susumu Takada and Hisao Hayakawa
513-516 : A Characteristic of Surface-Acoustic-Wave Convolver in Monolithic MIS Structure: Kazuo Tsubouchi, Shoichi Minagawa and Nobuo Mikoshiba
517-522 : Detection of Acoustic Waves with a PI-DMOS Transducer: K. W. Yeh, R. S. Muller and S. H. Kwan
523-526 : Detection of Molecular Films by Harmonic Generation of Surface Acoustic Waves: C. D. W. Wilkinson, P. F. Heidrich and E. G. Lean
527-532 : Reflection of Gulyaev-Bleustein and Rayleigh Waves from Rectangular and Curved Ends of Crystals: Vladimir Ivanovich Anisimkin and Anatolii Ivanovich Morozov

C-2: THYRISTOR

533-536 : High Field and Lateral Current at Turn-on of Large Area Thyristor: Nobuhiko Sawaki
537-540 : 1200 V and 5000 A Peak Reverse Blocking Diode Thyristor: C. K. Chu, J. E. Johnson and J. B. Brewstei
541-546 : Characteristics of New Thyristors: Jun-ichi Nishizawa and Kentaro Nakamura

C-3: SOS

547-550 : High Electron Mobility Silicon Films Grown on Sapphire at High Growth Rate: Yoshihiro Imamura, Katsuhiko Daido, Kazushige Mimegishi and Hideo Nakanishi
551-556 : A New Isolation Technique for SOS/LSI's -- Local Buried Oxide Isolation of SOS (LOBOS) --: Yoshio Sakai, Ryoichi Hori, Kikuo Dota and Masaharu Kubo
557-560 : A 2400-gate RALU on SOS: Jun Iwamura, Masahide Ohhashi, Mitsuo Isobe, Hiroyuki Tango, Tai Sato and Isamu Yamazaki
561-561 : Resonant Tunneling through Si/SiO₂ Double Barriers: Masataka Hirose, Mizuho Morita and Yukio Osaka

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