JJAP Online

11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979
Japanese Journal of Applied Physics
Vol. 19 (1980) Suppl. 19-1

A-4: LSI Devices

169-173 : Yield Modeling of Bipolar Integrated Circuits: Helmuth Murrmann and Ditmar Kranzer
175-180 : A High Speed Schottky 4 k-Bit PROM Using Diffused Eutectic Aluminum Process (Deap): Toshitaka Fukushima, Kouji Ueno and Kazuo Tanaka
181-185 : A New Transistor Structure for High Speed Bipolar LSI: Hiromi Sakurai, Yoichi Akasaka, Kenji Murakami, Koichi Kijima and Hidefumi Nakata
187-191 : A Single-Chip Speech Synthesizer for the PARCOR CODEC: Norio Miyahara, Shin-ichiro Yamada, Michihiro Yamane, Kazuyuki Saito, Eisuke Arai and Manabu Sunazawa
193-202 : Adaptive Wafer Scale Integration: Yukun Hsia, Gareth C. C. Chang and F. Dennis Erwin
203-208 : A 3000-Gate CMOS Masterslice LSI: Mitsumasa Ashida, Ryusuke Hoshikawa, Nobutake Matsumura, Jun-ichi Ishii, Hiroaki Ichikawa, Yoshihide Sugiura and Katsuyuki Inayosh

A-5: Memory Devices

209-212 : Analysis and Design of the Taper Isolated Dynamic RAM Threshold Transistor for VLSI dRMs: P. K. Chatterjee, G. W. Taylor and J. E. Leiss
213-217 : Buried J-FET Powered Static RAM Cell: Osamu Minato, Yoshio Sakai, Toshiaki Masuhara and Toshio Sasaki
219-224 : Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices: Yuji Yatsuda, Shin-ichi Minami, Ryuji Kondo, Takaaki Hagiwara and Yokichi Itoh
225-229 : N-Channel High Speed Nonvolatile Static RAM Utilizing MNOS Capasitors: Shozo Saito, Yukimasa Uchida and Norio Endo
231-237 : Dynamic Injection MNOS Memory Devices: Ryuji Kondo, Yuji Yatsuda, Mitsumasa Koyanagi and Yokichi Itoh
239-243 : High-Speed Nonvolatile MNOS/CMOS RAM: Gary Derbenwick, William Dodson and Ralph Sokel
245-248 : MNOS Traps and Tailored Trap Distribution Gate Dielectric MNOS: Yukun Hsia and K. L. Ngai
249-250 : Scanning Acoustic Microscopy for Study of Interfaces in Solid-State Devices: C. S. Tsai, J. K. Wang and C. C. Lee

A-6: Charge Transfer Devices/SIT and other Devices

253-257 : (Invited) The Buried Channel CCD: an Inherently Reliable Technology: G. F. Amelio and N. W. Chanoski
259-263 : A New Multiplex Input Technique for High Density CCD Memory: Kazuyasu Fujishima, Michihiro Yamada, Tetsuo Tada, Satoshi Takano, Masahiro Yoneda and Yoshimi Gamou
265-268 : CCD Analog-Analog Correlator with Four-FET Bridge Multipliers: Jay P. Sage and Arthur M. Cappon
269-272 : Reduced Geometry GaAs CCD for High Speed Signal Processing: I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson
273-277 : Static Induction Transistor Memory: Jun-ichi Nishizawa, Takashige Tamamushi, Tadahiro Ohmi, Terumoto Nonaka and Yasunori Mochida
279-282 : Static Induction Transistor Logic: Jun-ichi Nishizawa, Terumoto Nonaka and Yasunori Mochida
283-287 : 2 GHz, High Power Silicon SIT's: Toshio Shino, Hisao Kamo, Kiyoshi Aoki and Susumu Okano
289-293 : Bipolar Mode Static Induction Transistor: Jun-ichi Nishizawa, Tadahiro Ohmi, Yasunori Mochida and Takeshi Matsuyama
295-300 : Stationary and Transient Thermal Simulation and Its Use in Power IC Design: P. Antognetti, G. R. Bisio, F. Curatelli and S. Palara
301-304 : A New Majority Carrier Diode -- The Camel Diode: J. M. Shannon
305-308 : A 100 W Static Induction Transistor Operating at 1 GHz: Yasuya Kajiwara, Masao Aiga, Yukio Higaki, Mari Kato, Yoshinori Yukimoto and Kiyoshi Shirahata
309-312 : A New Transistor with Improved Safe Operating Area: Hisao Kondo and Yoshinori Yukimoto

B-1: GaAs IC

315-318 : (Invited) LSI Prospects of GaAs FET's: R. Zuleeg
319-324 : MSI High Speed Low Power GaAs Integrated Circuits: S. I. Long, B. M. Welch, R. C. Eden, F. S. Lee and R. Zucca
325-328 : Low-Power, High-Speed Integrated Logic with GaAs MOSFET: Naoki Yokoyama, Takashi Mimura, Hirotsugu Kusakawa, Katsuhiko Suyama and Masumi Fukuta
329-333 : High Speed Enhancement-Mode GaAs MESFET Integrated Circuits: Takashi Mizutani, Naoki Kato, Satoru Ishida, Kazuyoshi Asai, Yutaka Sakakibara, Kazuhiko Komatsu and Masamichi Ohmori
335-338 : VLSI GaAs Tunnel Diode-FET Logic and Memory Cell: Kurt Lehovec
339-343 : Power GaAs MESFETs with a Graded Recess Structure: Asamitsu Higashisaka, Takashi Furutsuka, Yoichi Aono, Yoichiro Takayama and Fumio Hasegawa
345-348 : Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band: Yasuo Mitsui, Michihiro Kobiki, Manabu Wataze, Mutsuyuki Otsubo, Takashi Ishii and Shigeru Mitsui

B-2: GaAs FET/LED and Detector

351-355 : Interface Effects on Drain Current Instability in GaAs MESFETs with Buffer Layer: Tomohiro Itoh and Hisayoshi Yanai
357-360 : Investigation on the Drift of GaAs MESFET's by High Frequency Parameters: Keiichi Ohata, Hitoshi Itoh and Fumio Hasegawa
361-364 : Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices: Norbert Arnold, Heinrich Daembkes and Klaus Heime
365-369 : A New Type GaAlAs Monolithic Lensed LED: Masayuki Abe, Osamu Hasegawa, Yasuaki Komatsu and Yoshikazu T\=oyama
371-375 : High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device: Kenji Okamoto and Yoshihiro Hamakawa
377-382 : Bright Pure Green Emission from N-free GaP LED's: Jun-ichi Nishizawa, Yasuo Okuno, Masayoshi Koike and Fumitoshi Sakurai
383-387 : pIn_xGa_1-xSb-nGa_1-yAl_ySb Heterojunction Photodiodes: Toshio Mizuki, Yoshimasa Sugimoto, Akira Tanaka and Tokuzo Sukegawa

B-3: Laser

391-3397 : (Invited) Mode Control in Semiconductor Lasers: Ryoichi Ito
399-402 : An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current: Masaaki Ayabe, Osamu Matsuda, Masashi Dosen, Sumio Santa and Naozo Watanabe
403-409 : Partially Homogeneous Broadening and Saturation in Semiconductor Lasers: Hideya Gamo
411-414 : 1.5-1.6 µm Wavelength (100) GalnAsP/InP DH Lasers: Shigehisa Arai, Yoshio Itaya, Yasuharu Suematsu and Katsumi Kishino
415-423 : (Invited) Ga_1-xAl_xAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition: Russell D. Dupuis
425-429 : Catastrophic Optical Damage Generation Mechanism in (AlGa)As DH Lasers: Taibun Kamejima and Hiroo Yonezu
431-436 : Degradation Characteristics of Ga_1-xAl_xAs Visible Diode Lasers: Takashi Kajimura, Takao Kuroda, Shigeo Yamashita, Hideo Todokoro, Michiharu Nakamura and Jun-ichi Umeda
437-440 : Slow Degradation Mechanism of GaAlAs Light-Emitting Diodes: Kazuo Kondo, Shigenobu Yamakoshi, Shoji Isozumi and Toyoshi Yamaoka

B-4: Optoelectronic Devices

443-449 : (Invited) Materials and Devices for Long Wavelength Optical Communication: Yoshihiko Mizushima
451-454 : Thin Film Optical Circuit Fabrication Using a CO₂ Laser: Hiroshi Terui and Morio Kobayashi
455-458 : A Coupled-Waveguide TE/TM Mode Splitter: Osamu Mikami
459-464 : Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits: Takayuki Sugeta, Tsuneo Urisu, Seizo Sakata and Yoshihiko Mizushima
465-469 : Signal Processing with Nonlinear Integrated Optics: R. Normandin and G. I. Stegeman

B-5: Compound Semiconductor Device Technology

473-477 : A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers: Toshio Tanaka, Saburo Takamiya, Makoto Ishii and Wataru Susaki
479-482 : Characterization of In_xGa_1-xAs_1-yP_y Epitaxial Layers and Relation to Lattice Matching: Akiyoshi Tamura, Koji Oka, Masataka Inoue, Junji Shirafuji and Yoshio Inuishi
483-487 : Selective Plasma Oxidation of GaAs -- A Study of the Interface Properties: R. P. H. Chang
489-493 : Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples: Motohiro Iwami, Su Chol Kim, Wako Kammura and Akio Hiraki
495-500 : Ion Implantation Study of HgCdTe: L. O. Bubulac, W. E. Tennant, S. H. Shin, C. C. Wang, M. Lanir, E. R. Gertner and E. D. Marshall
501-505 : Quantitative Analysis of Semiconductor Materials with Secondary Ion Mass Spectrometer: Masaharu Oshima, Izumi Kawashima and Shizuka Yoshii
507-511 : Magnetooptical Properties of MnBi Films Prepared by lonized-Cluster Beam Deposition Technique: Toshinori Takagi, Kakuei Matsubara, Naoto Kondo, Kenichi Fujii and Hiroshi Takaoka
513-517 : Operation and Stability of SnO₂ Gas Sensors: Peter Tischer, Hans Pink and Ludwig Treitinger

B-6: Solar Cells and Amorphous Devices

521-526 : Preparation and Characterization of Reactively-Sputtered Amorphous Si: H Films: S. Iizima, H. Okushi, A. Matsuda, S. Yamasaki, K. Nakagawa, M. Matsumura and K. Tanaka
527-532 : Ion Implanted Grating Type Si Solar Cells: Huey-liang Hwang, Ru-shyah Tang, Joseph J. Loferski and Ying-Chuan Yang
533-538 : High Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures: R. B. Godfrey and M. A. Green
539-544 : Efficient Solar Cells from Metallurgical-Grade Silicon: Terunori Warabisako, Tadashi Saitoh, Ekyo Kuroda, Haruo Itoh, Nobuo Nakamura and Takashi Tokuyama
545-550 : Design Parameters of a-Si: H High-Voltage Photovoltaic Cells: Hiroaki Okamoto, Yoshiteru Nitta and Yoshihiro Hamakawa
551-556 : Si and GaAs SIS Heterostructure Solar Cells Using Spray-Deposited ITO: P. P. Sharma, T. C. Anthony, S. Ashok, S. J. Fonash and L. L. Tongson
557-561 : High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region: Hideki Hasegawa, Shinichi Tamori and Takayuki Sawada
563-566 : High Efficiency Al_xGa_1-xAs-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor: Susumu Yoshida, Kotaro Mitsui, Takao Oda, Toshio Sogo and Kiyoshi Shirahata
567-571 : A Comparative Study of Cu₂S-Zn_xCd_1-xS and Cu₂S-CdS Thin Film Solar Cells Prepared by Solid State Reaction: M. S. Tomar and F. J. Garcia
573-577 : Amorphous Silicon Image Pickup Devices: Yoshinori Imamura, Saburo Ataka, Yukio Takasaki, Chushiro Kusano, Sachio Ishioka, Tadaaki Hirai and Eiichi Maruyama
579-583 : High Density Video Signal Recording in a New Amorphous Chalcogenide Thin Film: Motoyasu Terao, Kazuo Shigematsu, Masahiro Ojima, Yoshio Taniguchi, Shinkichi Horigome and Seiji Yonezawa

C-2: Josephson Devices

587-589 : Experimental Integrated Microwave Circuits with Josephson Junctions: Tapio Wiik, Hannu Ronkainen and Tor Stubb
591-594 : Fabrication of High Quality NbN/Pb Josephson Junction: Fujitoshi Shinoki, Susumu Takada, Shin Kosaka and Hisao Hayakawa
595-599 : Fabrication of DC-SQUIDs and Their Characteristics for Digital Applications: Shinya Hasuo, Hideo Suzuki and Koichi Dazai
601-605 : Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic: Hirotaka Tamura, Yoichi Okabe and Takuo Sugano
607-611 : Current Injection Logic Gate with Four Josephson Junctions: Susumu Takada, Shin Kosaka and Hisao Hayakawa

C-3: Crystal Technology

615-620 : (Invited) Advances in Silicon Crystal Properties: D. Huber and E. Sirtl
621-625 : Electrical Characterization of Micro Defects in Silicon Crystal: Kenji Ikuta, Yutaka Matsuoka and Hidetoshi Takaoka
627-630 : Impurity Content Determination in Si by Exciton Decays: R. B. Hammond and R. N. Silver
631-635 : Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique: Michio Tajima, Atsushi Yusa and Takao Abe
637-640 : Ion Implanted Silicon Molecular Beam Epitaxy (I² Si MBE): Yusuke Ota
641-645 : Doping Profile Control in Si MBE Film with Sb Ion Doping: Hideo Sugiura
647-651 : Silicon Epitaxy by Plasma Dissociation of Silane: Setsu Suzuki, Hiroshi Takai, Hidekazu Okuda and Tadatsugu Itoh
653-654 : (Invited) Horizontal Pulling of Silicon Single Crystals: B. Kudo
655-658 : Polycrystalline Silicon Ribbons Made by Rapid Quenching Methods: Noboru Tsuya, Toshio Takeuchi, Ken Ichi Arai, Kenji Ohmori, Atsuko Ebina, Tadashi Takahashi, Akihiko Kuroiwa and Teruhiko Ojima

C-5: Acoustic Devices

661-665 : (Invited) Integrated Acoustooptical Circuits for Real-Time Wideband Signal Processing: Chen S. Tsai
667-674 : (Invited) Surface-Acoustic-Wave Devices for Spread-Spectrum Communication: John H. Cafarella
675-679 : Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure: Kazuo Tsubouchi, Shoichi Minagawa, Takeshi Okamoto and Nobuo Mikoshiba
681-682 : Large Angle Acoustic Beam Steering in Acoustically Anisotropic Crystal: E. G. Lean and W. H. Chen
683-685 : Surface Acoustic Solitons: J. F. Ewen, R. L. Gunshor and V. H. Weston
687-690 : Observation of the Effective Diffraction of Submillimeter Radiation on the Electronic Waves in n-InSb: Valery Proklov, Vladimir Mirgorodsky, Evgeny Ushatkin, Yury Gulyaev and Vyacheslav Meriakri

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JJAP Online

11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979 Japanese Journal of Applied PhysicsVol. 19 (1980) Suppl. 19-1

A-0: Opening

A-1: Advanced Lithographys and Process

A-2: MOS Devices/Basic Aspects

A-3: Laser Annealing/SOS Devices

A-4: LSI Devices

A-5: Memory Devices

A-6: Charge Transfer Devices/SIT and other Devices

B-1: GaAs IC

B-2: GaAs FET/LED and Detector

B-3: Laser

B-4: Optoelectronic Devices

B-5: Compound Semiconductor Device Technology

B-6: Solar Cells and Amorphous Devices

C-2: Josephson Devices

C-3: Crystal Technology

C-5: Acoustic Devices

11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979
Japanese Journal of Applied Physics
Vol. 19 (1980) Suppl. 19-1