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3rd Photovoltaic Science and Engineering Conf. Japan, Kyoto, 1982
Japanese Journal of Applied Physics
Vol. 21 (1982) Suppl. 21-2

1-3 : (Invited) Photovoltaic Technology Progress and Industrialization Prospects: Paul D. Maycock

I-1: SILICON SOLAR CELLS (1)--Ion Implantation & Radiation Damage--

7-11 : Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation: Haruo Itoh, Katsumi Tokiguchi, Tadashi Saitoh, Masao Tamura and Takashi Tokuyama
13-17 : Si Solar Cells Fabricated by Ion Implantation and Short Time Furnace Processing: Akira Usami and Koji Takebayashi
19-22 : Radiation Test of Silicon Solar Cells for Space Application: Sumio Matsuda, Taizo Hirano, Toshinobu Matsutani, Yoshiharu Kiyota, Tatsuo Saga, Yasunori Uchida and Hiroshi Sato
23-26 : Ultrathin Silicon Solar Cell for Space Application: Toshinobu Matsutani, Tatsuo Saga, Hideyuki Ueyama, Yasufumi Hagihara, Taizo Hirano and Akio Suzuki
27-31 : Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells: Susumu Yoshida, Kotaro Mitsui, Takao Oda and Yoshinory Yukimoto

I-2: SILICON SOLAR CELLS (2)--Polycrystalline Silicon--

35-38 : Silicon Sheet Casting using a Mold Releasing Agent: Takeshi Saito, Akio Shimura and Shoji Ichikawa
39-42 : Plasma Hydrogenation Effects in Cast Polycrystalline Silicon Solar Cells: Kesao Noguchi, Takeshi Saito, Akio Shimura and Shoji Ichikawa
43-45 : Large Area Si Sheet Prepared Using Spinning Method: Yasuhiro Maeda and Takashi Yokoyama
47-51 : Efficiency Improvement of Solar Cell utilizing Plasma-deposited Silicon Nitride: Hiroshi Morita, Akira Sato, Hiroshi Washida, Taketoshi Kato and Akira Onoe
53-56 : Polycrystalline and Amorphous Si MOS Solar Cells by Anodization: Hidekazu Yamamoto, Masahiro Moniwa and Hideki Hasegawa
57-60 : Poly-Si and a-Si: H MOS Photodiodes for Large-Area, High Spatial Resolution Photosensor Arrays: Masahiro Moniwa, Satoshi Arimoto and Hideki Hasegawa

I-3: NEW STRUCTURE AND ADVANCED MATERIAL (1)

63-66 : Zn₃P₂/ITO Heterojunction Solar Cells: Toshikazu Suda, Mitsuyoshi Kobayashi, Akio Kuroyanagi and Shoichi Kurita
67-72 : Effect of Photo-Induced Microcrystallization on In_x(Si_0.1 Se_0.9)_1-x Film-ITO Solar Cells: Hiroyoshi Naito, Tatsuhiko Matsushita, Akio Suzuki, Masahiro Okuda and Tanehiro Nakau
73-75 : High-Efficiency Selenium Photovoltaic Solar Cells: Akio Kunioka and Tokio Nakada
77-81 : Selenium Thin Film Solar Cell: Hideo Ito, Masayoshi Oka, Toshio Ogino, Akitsu Takeda and Yoshihiko Mizushima
83-86 : Photovoltaic Properties of Cuprous Chalcogenide-Silicon Junctions: Hiroshi Okimura, Masami Togasaki, Mitsuo Iwase and Yasuo Gekka

II-1: COMPOUND SOLAR CELLS

89-91 : Wavelength Division GaAlAs/GaAs Solar Cells Grown by MOCVD: Hiroyuki Nobuhara, Shiro Sakai and Masayoshi Umeno
93-98 : GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics: Akio Sasaki, Keisuke Ishio, Susumu Noda and Shigeo Fujita
99-102 : p-Ga_0.2Al_0.8As/p-Ga_1-yAl_yAs/n-Ga_1-yAl_yAs Solar Cells: Kazuya Masu, Makoto Konagai, Shin-ichi Nakatsuka and Kiyoshi Takahashi
103-107 : The Effect of CdTe Pattern on the Characteristics of Screen Printed CdS/CdTe Solar Cell: Hitoshi Matsumoto, Hiroshi Uda, Yasumasa Komatsu, Akihiko Nakano and Seiji Ikegami
109-113 : Sputtered n-ITO/p-InP Solar Cells: Toshikazu Suda, Masahisa Suzuki, and Shoichi Kurita

II-2: SILICON SOLAR CELLS (3)

117-120 : Characteristics of Silicon Inversion Layer Solar Cells: Hideharu Matsuura, Hisao Fujii, Hitoshi Takai and Hiroyuki Matsunami
121-124 : A Comparison of Spray-Deposited ITO/n-Si and SnO₂/n-Si Solar Cells: Takao Nagatomo, Yoshio Inagaki, Yuji Amano and Osamu Omoto
125-129 : Silicon Solar Cells Made by Liquid Phase Epitaxy: Kentaro Ito, Tatsuo Nakazawa and Akira Masamura
131-136 : Bus Electrode Having Same Thermal Expansion Coefficient as Crystalline Silicon Solar Cell: Taketoshi Kato, Koichiro Inomata, Hiroshi Morita, Fumio Mori, Hirotaka Nakano, Shinzo Sugai, Hiroshi Washida and Akira Onoe
137-141 : Titanium Dioxide Antireflective Coating for Silicon Solar Cells by Spinning Technique: Mikio Murozono, Sotoyuki Kitamura, Takuichi Ohmura, Kenji Kusao and Yoshiyuki Umeo
143-153 : (Invited) Cost Estimates for Flat Plate and Concentrator Collector Arrays: Katsunori Shimada

II-3: SYSTEM AND ARRAY

157-161 : Light Position Sensitive Silicon Detectors Produced by Using the Epitaxial Growth Technique: Chisu Kim, Yongcha Kim, Kazuo Husimi, Shoichi Ohkawa and Ko Kikuchi
163-166 : Temperature Dependence of Si Solar Cell Performance under Concentrated Sunlight: Masahito Fujisaki, Noboru Mizukami, Akio Kitamura and Hiroshi Kuniyasu
167-171 : GaAs Concentrator Solar Cells Using Aluminum-Cored Printed Circuit Bases: Yukihiro Sasatani, Shin-ichi Iguchi, Kazuhito Murakami, Yoshikado Hosoda and Kenya Motoyoshi
173-176 : GaAs Solar Cell Test Facility: Maumi Kawashima, Yoshikado Hosoda, Chizuru Suzawa, Toshiro Shimada, Kenya Motoyoshi and Yukihiro Sasatani
177-181 : A 2 kW Photovoltaic Power Generating System Using a-Si Solar Cells: Shoichi Nakano, Hisashi Shibuya, Toshiaki Yokoo, Kazuyoshi Tsukamoto and Yukinori Kuwano

II-4: NEW STRUCTURE AND ADVANCED MATERIAL (2)

185-189 : Conductivity Control and Photovoltaic Effects in Chalcogenide Amorphous Semiconductor: Shuichi Okano, Ryuichi Kawachi, Ryoichi Yamazaki, Yoshio Kakimoto and Masakuni Suzuki

III-1: AMORPHOUS FILMS

193-198 : Effect of the Deposition Condition on Properties of a-Si: F: H Films: Yoshiyuki Uchida, Takeshige Ichimura, Osamu Nabeta, Yukio Takeda and Hiromu Haruki
199-203 : Amorphous Silicon Films Prepared by rf-Bias Sputtering: Masakuni Suzuki, Makoto Suzuki, Matahiko Kanada, Shin Shimizu, Yukiyoshi Takayama and Tadashi Yamaura
205-208 : Substitutional Doping of a-Si_xNi_1-x: H: Hiroyuki Kurata, Hironobu Miyamoto, Masataka Hirose and Yukio Osaka
209-212 : Characterization of Amorphous Si: H Films Prepared by rf Planar Magnetron Sputtering: Takao Nagatomo, Shunji Moribe, Masaaki Usui and Osamu Omoto
213-216 : Exact Determination of Bulk Gap-State Density in a-Si: H: Tohru Suzuki, Masataka Hirose and Yukio Osaka

III-2: AMORPHOUS SOLAR CELLS (1)--Preparation Process--

219-224 : Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane: Hitoshi Taniguchi, Makoto Konagai, Koeng Su Lim, Porponth Sichanugrist, Koichiro Komori and Kiyoshi Takahashi
225-229 : Arc-Discharge Produced Amorphous-Silicon Solar-cells: Yasutaka Uchida, Osamu Kobayashi and Masakiyo Matsumura
231-237 : Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method: Michitoshi Ohnishi, Hidenori Nishiwaki, Yukio Nakashima, Noboru Nakamura, Shinya Tsuda, Takeo Fukatsu and Yukinori Kuwano
239-244 : Preparation and Properties of a-Si: H Solar Cells on Organic Polymer Film Substrate: Hiroshi Okaniwa, Kenji Nakatani, Mitsuaki Yano, Mitsuo Asano and Kazutomi Suzuki

III-3: AMORPHOUS SOLAR CELLS (2)--Characterization--

247-250 : Difference of Characteristics of a-Si: H Solar Cells between under Illumination and Dark: Masatoshi Warashina and Akio Ushirokawa
251-257 : Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells: Shinya Tsuda, Noboru Nakamura, Yukio Nakashima, Hisaki Tarui, Hidenori Nishiwaki, Michitoshi Ohnishi and Yukinori Kuwano
259-263 : Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si: H: Hideyo Okushi, Satoshi Yamasaki, Hiroshi Kawai, Masahiro Hotta and Kazunobu Tanaka
265-270 : Properties and Photovoltaic Characteristics of a-SiC: H Film: Keiichi Enomoto, Hidenori Nishiwaki, Kaneo Watanabe, Yukio Nakashima, Shinya Tsuda, Michitoshi Ohnishi and Yukinori Kuwano
271-275 : Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell: Noboru Fukada, Takeshi Imura, Akio Hiraki, Yoshihisa Tawada, Kazunori Tsuge, Hiroaki Okamoto and Yoshihiro Hamakawa

III-4: AMORPHOUS SOLAR CELLS (3)--Device Physics--

279-285 : A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells: Shuichi Nonomura, Hiroaki Okamoto, Hirotsugu Kida and Yoshihiro Hamakawa
287-290 : Effects of Substrate Surface Condition on a-Si Photovoltaic Characteristics: Takeo Fukatsu, Soichi Sakai, Shoichiro Nakayama, Shinya Tsuda and Yukinori Kuwano
291-296 : Characterization of a-SiC: H as a Window Material for p-i-n a-Si Solar Cells: Yoshihisa Tawada, Kazunori Tsuge, Kunio Nishimura, Masataka Kondo, Hiroaki Okamoto and Yoshihiro Hamakawa
297-302 : Amorphous Solar Cells Using a-Si: H and a-SiGe: H Films: Genshiro Nakamura, Kazuhiko Sato and Yoshinori Yukimoto

IV: PANEL DISCUSSION

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