JJAP Online

14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982
Japanese Journal of Applied Physics
Vol. 22 (1983) Suppl. 22-1

A-1: OPENING

3-10 : (Invited) VLSI Technology Overviews and Trends: S.M. Sze
11-19 : (Invited) GaAs MIS Structures -- Hopeless or Promising?: Harry C. Gatos, Jacek Lagowski and Thomas E. Kazior
21-27 : (Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices: Seijiro Furukawa and Hiroshi Ishiwara
29-35 : (Invited) n-i-p-i Superlattices -- Novel Semiconductors with Tunable Properties: Gottfried H. Döhler
37-41 : (Invited) Surface Acoustic Wave Devices on Silicon: R. L. Gunshor, S. J. Martin and R. F. Pierret

A-2: LSI-1

45-50 : (Invited) LSIs for Communication Uses: Toshimasa Suzuki and Kotaro Kato
51-54 : A 1 K bit Associative Memory LSI: Tadanobu Nikaido, Takeshi Ogura, Shigetatsu Hamaguchi and Susumu Muramoto
55-58 : New Dynamic RAM Cell Combined with Hi-C Structure: Hideyuki Ozaki, Kazuhiro Shimotori, Kazuyasu Fujishima, Shin-ichi Satoh and Takao Nakano
59-62 : Hot-Electron Trapping Effects of Short Channel 64 K Dynamic MOS RAM: Michihiro Yamada, Heihachi Matsumoto, Toshifumi Kobayashi, Masaki Kumanoya, Makoto Taniguchi and Takao Nakano
63-67 : Redundancy Techniques for Dynamic RAMs: Katsuhiro Shimohigashi, Masamichi Ishihara and Shinji Shimizu
69-73 : Soft Error Analysis of Fully Static MOS RAM: Masahiko Yoshimoto, Kenji Anami, Hirofumi Shinohara, Yoshihiro Hirata, Tsutomu Yoshihara and Takao Nakano

A-3: LSI-2

77-80 : The Dielectrically Isolated High Voltage IC Technology: Yoshitaka Sugawara, Tatsuya Kamei and Yoshikazu Hosokawa
81-84 : Novel Gate-Protection Devices for MOSFET's: Isao Yoshida, Takeaki Okabe, Kazutoshi Ashikawa and Shigeo Ootaka
85-88 : Compatible High and Low Voltage CMOS Devices Using SIMOX Technology: Masahiro Akiya, Sadao Nakashima and Kotaro Kato
89-93 : MNOS Retention-Endurance Characteristics Enhancement Using Graded Nitride Dielectric: Yukun Hsia, Eden Mei and Kia L. Ngai
95-98 : Diffusion Length Measurement Using Dynamic MOS RAM: Masaki Kumanoya, Makoto Taniguchi, Michihiro Yamada, Toshifumi Kobayashi, Yasuji Nagayama and Takao Nakano
99-102 : New Observation of Hot-Carrier Injection Phenomena: Yoshinobu Nakagome, Eiji Takeda, Hitoshi Kume and Shojiro Asai
103-108 : (Invited) “High-Performance Schottky-Barrier IR-CCD Image Sensors”: Walter F. Kosonocky and Hammam Elabd
109-112 : High Density Frame Transfer Image Sensor: G. A. Beck, M. G. Collet, J. A. A. van Gils, A. J. Klinkhamer, H. L. Peek, W. N. J. Ruis, J. G. van Santen, T. F. Smit and G. T. J. Vandormael

B-5: GaAs IC

335-339 : High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes: Takashi Furutsuka, Tsutomu Tsuji, Fumiaki Katano, Mikio Kanamori, Asamitsu Higashisaka and Yoichiro Takayama
341-344 : An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology: Katsuhiko Suyama, Haruo Shimizu, Shigeru Yokogawa, Yoshiro Nakayama and Akihiro Shibatomi
345-348 : 500 Gates GaAs Gate Array: Nobuyuki Toyoda, Toshiyuki Terada, Masao Mochizuki, Katsue Kanazawa and Akimichi Hojo
349-353 : Recent Advances in GaAs Digital IC Technology: R. Zucca, F. S. Lee, B. M. Welch, G. R. Kaelin, Y. D. Shen and R. P. Vahrenkamp
355-356 : (Invited) High Electron Velocity for High Frequency Transistors: L. F. Eastman
357-363 : (Invited) Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface: Masataka Inoue, Satoshi Hiyamizu, Minoru Inayama and Yoshio Inuishi
365-369 : MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs: Keiichi Ohata, Hiroshi Terao, Haruo Sunakawa and Yoichiro Takayama
371-372 : UHF/L Band Low-Noise Dual-Gate GaAs FETs: Cheng Siqi and Xia Xianqi

B-6: III-V DEVICE TECHNOLOGY

375-380 : (Invited) Heterojunction Bipolar Transistors: J. S. Harris, Jr., P. M. Asbeck and D. L. Miller
381-384 : N⁺ Self-Aligned MESFET for GaAs LSIs: Kimiyoshi Yamasaki, Kazuyoshi Asai and Katsuhiko Kurumada
385-388 : Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P₃N₅) Gate Insulator for an Inversion-Mode InP MISFET: Yukihiro Hirota, Takeshi Kobayashi and Yoshitaka Furukawa
389-392 : Inter facial Trapping and MIS Device Stability on InP: Derek Lile, Marylin Taylor and Larry Meiners
393-396 : Design Considerations of Coupling Capacitors in GaAs Integrated Circuits: Alec Livingstone and David Welbourn
397-400 : Electrical Properties of Mo/III-V Compounds Schottky Barriers: M. S. Lin, W. H. Su, J. C. Lou and T. F. Lei
401-404 : Implantation into an AlGaAs/GaAs Heterostructure: Hidetoshi Nishi, Tsuguo Inada, Junji Saito, Tomonori Ishikawa and Satoshi Hiyamizu
405-409 : GaAs P-N Junction Formation by Carbon Ion Implantation: Yoh Mita, Noriaki Tsukada, Masafumi Hashimoto, Shigeru Semura and Sumio Sugata

C-2: CRYSTALS/JPSEPHSON JUNCTION

413-418 : (Invited) Growth of Undoped Semi-Insulating GaAs Single Crystal: Tsuguo Fukuda
419-425 : (Invited) Characterization of Semi-Insulating GaAs Substrates for GaAs ICs: Shintaro Miyazawa and Yasushi Nanishi
427-430 : Characterization of Computer Controlled GaP Single Crystals: Masayuki Watanabe, Jisaburo Ushizawa, Shoichi Washizuka and Yoshihiro Kokubun
431-435 : Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs: S. J. Eglash, Shihong Pan, Dang Mo, W. E. Spicer and D. M. Collins
437-442 : (Invited) Recent Advances in Josephson Material and Device: Hisao Hayakawa
443-446 : Hysteresis Loop in Current-Voltage Curve for BaPb_0.7Bi_0.3O₃ Josephson Junction Array in a Microwave Field: Minoru Ito, Yoichi Enomoto and Toshiaki Murakami
447-450 : A Josephson Full Adder Circuit Using Four-Junction Logic (4JL) Gates: Hiroshi Nakagawa, Eiichi Sogawa, Susumu Takada and Hisao Hayakawa

C-3: SENSORS

453-456 : Fabrication and Properties of a-Si: H Photoreceptor and Its Application to Laser Beam Printer: Yoshikazu Nakayama, Toshiya Natsuhara, Masao Nakano, Nobuyuki Yamamoto and Takao Kawamura
457-460 : Contact-Type Linear Sensor Using Amorphous Si Diode Array: Kiyoshi Ozawa, Nobuyoshi Takagi, Koichi Hiranaka, Shintaro Yanagisawa and Kunihiko Asama
461-464 : Single-Tube Color Imager Using Hydrogenated Amorphous Silicon: Sachio Ishioka, Yoshinori Imamura, Yukio Takasaki, Chushiro Kusano, Tadaaki Hirai and Saburo Nobutoki
465-468 : Integrated Pyroelectric Infrared Sensor Using PbTiO₃ Thin Film: Masanori Okuyama, Hiroyuki Seto, Motohiro Kojima, Yasushi Matsui and Yoshihiro Hamakawa
469-472 : High Temperature and High Pressure pH Sensors with Sputtered Iridium Oxide Films: Teruaki Katsube, Imants R. Lauks, Jan van der Spiegel and Jay N. Zemel
473-478 : (Invited) Polyacetylene: A Typical Semiconducting and Metallic Polymer: Hideki Shirakawa

C-4: THIN FILM DEVICES

481-485 : (Invited) Silicon TFTs for Flat Panel Displays: François Morin
487-491 : (Invited) Amorphous Silicon Transistors and Integrated Circuits: Masakiyo Matsumura
493-496 : Electrical Properties of Polycrystalline Silicon MOSFETs on Glass: Yasuhisa Oana, Hidenori Kotake, Nobuo Mukai and Kyozoh Ide
497-500 : A 10×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display: Makoto Matsui, Jun-ichi Owada, Yasuhiro Shiraki, Eiichi Maruyama and Hideaki Kawakami
501-504 : Fast Switching Array using Liquid Crystal for Electrophotographic Printer: Akihiko Sugimura, Yasuhiro Ueda, Kohsuke Moriwaki, Nobuyuki Yamamoto and Takao Kawamura
505-509 : High Rate and Low Radiation Damage Film Deposition by Compressed Magnetic Field (CMF) Magnetron Sputtering: Tomonobu Hata, Junji Kawahara and Keiji Toriyama
511-514 : Film Growth of GaN on a c-Axis Oriented ZnO Film Using Reactive Ionized-Cluster Beam Technique and Its Application to Thin Film Devices: Kakuei Matsubara and Toshinori Takagi

C-5: SOLAR CELLS

517-521 : Characterization of Film and Junction Qualities in a-Si Solar Cells: Shuichi Nonomura, Hiroaki Okamoto, Hirotsugu Kida, Kouji Fukumoto and Yoshihiro Hamakawa
523-526 : Photo-Conductive, Low Impurity-Diffusive, Heat-Resisting a-Si Formed by Glow-Discharged Decomposition of SiF₂ and H₂ Mixture: Hideki Matsumura and Seijiro Furukawa
527-534 : (Invited) Recent Progress of the Amorphous Silicon Solar Cell Technology: Yoshihiro Hamakawa
535-538 : A Screen Printed CdS/CuInSe₂ Solar Cell: Francisco J. Garcia and Maharaj S. Tomar

C-6: CHARACTERIZATION

541-546 : (Invited) Function-Testing of Passivated LSI's with Stroboscopic Scanning Electron Microscope: K. Ura and H. Fujioka
547-551 : (Invited) Auger Recombination Study in Silicon Using a Tunneling Technique: R. M. Swanson
553-556 : Dislocation Generation due to Stress Induced by Oxidation in Si Grooves: Yukio Takano and Hirotsugu Kozuka
557-560 : Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption: Terunori Warabisako, Tadashi Saitoh, Teruaki Motooka and Takashi Tokuyama
561-564 : Simulation and Modeling of Boron Diffusion in Pilicon: Shuang-Fa Guo, Tze-Yh Chu and Liang-Bi Chang
565-567 : A New Method for Measuring Noise Figure of Microwave Transistor: Cao Yulu

PANEL DISCUSSION

LATE NEWS

581-582 : A Low-Voltage Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS): Eiichi Suzuki, Yutaka Hayashi, Kenichi Ishii and Hisato Hiraishi
583-584 : Device Applications of Direct Gap Group IV Semiconductors: C. H. L. Goodman
585-586 : A Practical Limitation of the Precision in Silicon n-MOS Devices as the Quantum Standard Resistor: K. Yoshihiro, J. Kinoshita, K. Inagaki, C. Yamanouchi, K. Shida, T. Igarashi, J. Moriyama and S. Kawaji
587-588 : AlGaAs/GaAs Monolithic LED/Amplifier Circuit Fabricated by Molecular Beam Epitaxy: O. Wada, T. Sanada, H. Hamaguchi, T. Fujii, S. Hiyamizu and T. Sakurai
589-590 : MOCVD Grown (AlGa)As Lasers in the Visible Wavelength Region Shorter than 780 nm: O. Matsuda, H. Sato, J. Ogawa, Y. Mori, K. Kaneko and N. Watanabe
591-592 : Inversion-Mode In_0.53Ga_0.47As MIS FET for IC Applications: D. Fritzsche, E. Kuphal and G. Weimann
593-594 : InP High Mobility Enhancement MISFETs Using Anodically Grown Al₂O₃-Native Oxids/InP Interface: Takayuki Sawada, Hideo Ohno and Hideki Hasegawa
595-596 : Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs: Naotaka Iwata, Fumio Hasegawa, Norio Yamamoto and Yasuo Nannichi
597-598 : High Speed Resistor Coupled Josephson Logic: J. Sone, T. Yoshida, S. Tahara and H. Abe
599-600 : A New Simple Configuration for a Wide Margin Josephson Adder using High Gain Direct Coupled Logic Gates: Kohji Hohkawa, Junsaku Nitta and Akira Ishida
601-602 : A 64-Bit Josephson Memory Circuit: H. Suzuki, H. Shibayama, M. Kosugi, I. Hanyu, T. Igarashi, H. Hoko, T. Nakamura, S. Hasuo and T. Yamaoka
603-604 : Control of Silicon Crystal Growth on an Amorphous Planar Substrate by Metallic Film Patterning: Hidefumi Mori
605-606 : Lateral-Epitaxy of CVD a-Si over SiO₂ Stripe-Area by Furnace-Annealing: Yasuo Kunii, Michiharu Tabe and Kenji Kajiyama
607-608 : Recrystallization of Silicon-on-Insulator Structures by an Electron-Beam with Fast Sinusoidal X- and Slow Linear Y-Scans: H. Ishiwara, M. Nakano, H. Yamamoto and S. Furukawa
609-610 : Degradation Mechanisms on Mo or Mo-silicide/n⁺ -Si Ohmic Contacts on High Temperature Annealing: Kohei Higuchi, Masaru Kanamori and Hidekazu Okabayashi
611-612 : Lithography Experiments Using Synchrotron Radiation from ETL Storage Ring: Koichiro Hoh, Masahiro Hirata, Nobufumi Atoda, Hiroshi Tanino, Shingo Ichimura and Hideo Onuki
613-614 : Simulation of Light Scattering and Determination of the MTF of Positive Photoresists using the Monte Carlo Method: Makoto Nakase
615-616 : Profiles of Laser Etched Grooves in Iron Garnet Films: Koji Ando, Takashi Okuda, Yuko Yokoyama and Naoki Koshizuka
617-618 : Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition: Tadashi Saitoh, Shinichi Muramatsu, Sunao Matsubara and Masatoshi Migitaka
619-619 : Low Threshold Short Visible Wavelength CW Single Quantum-Well-DH Lasers by MO-CVD: C. Lindström, R. D. Burnham and D. R. Scifres

[ARCHIVES] [SEARCH] [REGISTRATION] [JJAP ONLINE] [JJAP HOME]

Contact information

JJAP Online

14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982 Japanese Journal of Applied PhysicsVol. 22 (1983) Suppl. 22-1

A-1: OPENING

A-2: LSI-1

A-3: LSI-2

A-4: LSI-3 AND JUNCTION DEVICES

A-5: PROCESS TECHNOLOGY

A-6: SILICON CRYSTALS

B-2: LD AND LED-1

B-3: NOVEL DEVICES

B-4: LD AND LED-2

B-5: GaAs IC

B-6: III-V DEVICE TECHNOLOGY

C-2: CRYSTALS/JPSEPHSON JUNCTION

C-3: SENSORS

C-4: THIN FILM DEVICES

C-5: SOLAR CELLS

C-6: CHARACTERIZATION

PANEL DISCUSSION

LATE NEWS

14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982
Japanese Journal of Applied Physics
Vol. 22 (1983) Suppl. 22-1