Jpn. J. Appl. Phys. 10 (1971) pp. 655-655  |Table of Contents|
|Abstract| |Full Text PDF (122K)| |Buy This Article|

ESR Studies on P+ Ion-Implanted Si

Seiichi Hasegawa, Ryōzō Kontani and Tatsuo Shimizu

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. physica status solidi (a) 43 (1977) 417
    An ESR study of annealing characteristics for heavily irradiated silicon
    H. Nakata and H. Morishima
  2. physica status solidi (a) 33 (1976) 633
    Dose dependence of ESR spectra for on-channel-irradiated silicon
    H. Nakata and H. Morishima
  3. Japanese Journal of Applied Physics 12 (1973) 1181
    Electron Spin Resonance Studies on Ion-Implanted Silicon. I. Amorphisation
    Seiichi Hasegawa, Kenji Ichida and Tatsuo Shimizu


[ARCHIVE] [SEARCH] [REGISTRATION] [JJAP HOME] [JSAP HOME]
Copyright ©2011 The Japan Society of Applied Physics
Contact information