Jpn. J. Appl. Phys. 11 (1972) pp. 103-106  |Next Article|  |Table of Contents|
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Some Electrical Properties of ZnGeP₂ Crystals

K. Somogyi and I. Bertóti

(Received May 14, 1971)

Hall effect and thermoelectric power are measured on p-type ZnGeP₂ single crystals. The ZnGeP₂ crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1×10¹³ cm^-3 and mobility 18 cm²/Vsec obtained from Hall measurements differ considerably from that (1×10¹⁶ cm^-3 and 1 cm² Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes m_h^*=(0.5±0.1)m₀ is determined from the values of the thermoelectric power.

URL: http://jjap.jsap.jp/link?JJAP/11/103/
DOI: 10.1143/JJAP.11.103

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