Jpn. J. Appl. Phys. 11 (1972) pp. 103-106 |Next Article| |Table of Contents|
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Some Electrical Properties of ZnGeP2 Crystals
Research Institute for Technical Physics of the Hungarian Academy of Sciences
(Received May 14, 1971)
Hall effect and thermoelectric power are measured on p-type ZnGeP2 single crystals. The ZnGeP2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1×1013 cm-3 and mobility 18 cm2/Vsec obtained from Hall measurements differ considerably from that (1×1016 cm-3 and 1 cm2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes mh*=(0.5±0.1)m0 is determined from the values of the thermoelectric power.
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