Jpn. J. Appl. Phys. 11 (1972) pp. 15-19  |Next Article|  |Table of Contents|
|Full Text PDF (685K)| |Buy This Article|

Precise Measurements of the Infrared Spectra near 9µm Obtained from RF-Sputtered Silicon Oxide (SiO_X) Films

Takehiko Kubota and Mototaka Kamoshida

(Received June 18, 1970; revised March 18, 1971)

Optical properties of RF-sputtered silicon oxide films is studied as a function of sputtering voltage, film thickness and heat treatment conditions. The wavelength of 9-µm absorption band becomes shorter with increasing sputtering voltage and film thickness for as-sputtered films, but this is not the case for films heat-treated above 700°C in Ar. This phenomenon can be explained by oxygen deficiency in the sputtered films, the degree of which is estimated at 6% after the heat-treatment.

URL: http://jjap.jsap.jp/link?JJAP/11/15/
DOI: 10.1143/JJAP.11.15

References | Citing Articles (12)

1. T. Kozuma, T. Kobayashi and J. Nakai: Oyo Buturi 37 (1968) 1114 [in Japanese].
2. H. Muta and D. Shinoda: 1969 Joint Meeting of Japan Society of Applied Physics and Physical Society of Japan, Abstract p. 86. ing Studies of Insulators by Means of Langmuir
3. C. V. Jorgenson and G. K. Whener: J. Appl. Phys. 36 (1965) 2672[AIP Scitation].
4. W. A. Pliskin, P. D. Davides, H. S. Lehman and L. I. Maisel: IBM J. Res. Developm. 11 (1967) 461.
5. W. A. Pliskin and H. S. Lehman: J. Electrochem. Soc. 112 (1965) 1013.
6. H. R. Hoenig and L. I. Maissel: IBM J. Res. Developm. 14 (1970) 168.
7. T. Tarui, H. Teshima and S. Hirai: Bulletin of Electrotechnical Lab. 30 (1966) 69.
8. K. Sato: J. Electrochem. Soc. 117 (1970) 1065.
9. Y. Haneta and S. Nakanuma: Jpn. J. Appl. Phys. 6 (1967) 1176[JSAP].