Jpn. J. Appl. Phys. 11 (1972) pp. 15-19 |Next Article| |Table of Contents|
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Precise Measurements of the Infrared Spectra near 9µm Obtained from RF-Sputtered Silicon Oxide (SiOX) Films
IC Division, Nippon Electric Co., Ltd.
(Received June 18, 1970; revised March 18, 1971)
Optical properties of RF-sputtered silicon oxide films is studied as a function of sputtering voltage, film thickness and heat treatment conditions. The wavelength of 9-µm absorption band becomes shorter with increasing sputtering voltage and film thickness for as-sputtered films, but this is not the case for films heat-treated above 700°C in Ar. This phenomenon can be explained by oxygen deficiency in the sputtered films, the degree of which is estimated at 6% after the heat-treatment.
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