Jpn. J. Appl. Phys. 11 (1972) pp. 62-68  |Next Article|  |Table of Contents|
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C-V Shift Characteristics of Metal-Al₂O₃-Si and Metal-Al₂O₃-SiO₂-Si Structures

Tohru Tsujide

(Received April 15, 1971)

C-V shift characteristics of MAS(Metal/Al₂O₃/Si) structure with Al₂O₃ prepared by the hydrolysis of AlCl₃ are investigated as a function of the Al₂O₃ thickness, the temperature and the applied pulse width. Using also MAOS(Metal/Al₂O₃/SiO₂/Si) structure the critical voltage required to shift the C-V curve is given as a function of the SiO₂ thickness. The results show that the critical voltage of MAOS structure increases in proportion to the SiO₂ thickness over the range 0–700Å for negative bias and in the range 80–700Å for the positive bias. Liquid such as Hg and diluted H₃PO₄ is used as an electrode as a substitute for metal. This Liquid/Al₂O₃/Si structure is not found to exhibit the positive C-V shift for the negative bias case. A qualitative explanation responsible for the C-V shift characteristics of MAS and MAOS structures is presented from these experimental results.

URL: http://jjap.jsap.jp/link?JJAP/11/62/
DOI: 10.1143/JJAP.11.62

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