Jpn. J. Appl. Phys. 12 (1973) pp. 1475-1485  |Next Article|  |Table of Contents|
|Full Text PDF (1614K)| |Buy This Article|

Impurity Dependence of the Annealings of Gamma-Ray Induced Defects in p-Type Germanium

Kazuyoshi Ito, Masahiro Oka and Haruo Saito¹

(Received March 13, 1973)

Annealing of radiation induced defects in gallium- or indium-doped germanium was studied by measuring minority carrier lifetime. The samples were irradiated with Co 60 gamma rays at 190 K or at room temperature. Three annealing stages were observed in the temperature range 20∼200°C. Activation energies and frequency factors of the low temperature stage (20∼60°C) were found to depend on the atomic size of the impurity. The activation energies were obtained to be 0.88 eV and 0.60 eV for inditum- and gallium-doped samples respectively. A model for the stage is proposed as follows: An impurity-vacancy complex migrates to a substitutional impurity atom and makes an association. In the intermediate temperature stage (80∼125°C) a deep trap grows up at the expense of a shallow trap. A recombination level at E_V+0.06 eV is removed in the temperature stage above 130°C. The activation energy of the high temperature stage is also dependent on the impurity species.

URL: http://jjap.jsap.jp/link?JJAP/12/1475/
DOI: 10.1143/JJAP.12.1475

References

1. I. Higashinakagawa, S. Ishino, F. Nakazawa and R. R. Hasiguti: Lattice Defects in Semiconductors ed. R. R. Hasiguti (Univ. of Tokyo Press, Tokyo, 1968) p. 211.
2. H. Saito, N. Fukuoka, H. Hattori and J. H. Crawford, Jr.: Radiation Effects in Semiconductors ed. F. L. Vook (Plenum Press, New York, 1968) p. 232.
3. H. Saito, N. Fukuoka, H. Hattori and J. H. Crawford, Jr.: Lattice Defects in Semiconductors ed. R. R. Hasiguti (Univ. of Tokyo Press, Tokyo, 1968) p. 199.
4. H. Saito, N. Fukuoka and Y. Tatsumi: Radiation Effects 8 (1971) 171.
5. M. Shimotomai and R. R. Hasiguti: Radiation Effects 9 (1971) 47.
6. T. M. Flanagan and E. E. Klontz: Phys. Rev. 167 (1968) 798[APS].
7. R. A. Matula and E. E. Klontz: Radiation Effects 9 (1971) 37.
8. D. L. Trublood: Phys. Rev. 161 (1967) 828[APS].
9. J. E. Whitehouse: Phys. Rev. 143 (1966) 520[APS].
10. Z. G. Werner, J. E. Whitehouse, S. Ishino and E. W. J. Mitchell: Proc. IX Intern. Conf. Physics Semiconductors, Moscow, 1968 (Nauka, Leningrad, 1968) Vol. II, p. 1070.
11. W. L. Brown, W. M. Augustyniak and T. R. Waite: J. Appl. Phys. 30 (1959) 1258[AIP Scitation].
12. A. P. Ramsa, H. Jacobs and F. A. Brand: J. Appl. Phys. 30 (1959) 1054[AIP Scitation].
13. K. Ito, M. Oka and H. Saito: J. Phys. Soc. Jpn. 31 (1971) 305.
14. O. L. Curtis, Jr. and J. H. Crawford, Jr.: Phys. Rev. 126 (1962) 1342[APS].
15. J. C. Pigg and J. H. Crawford, Jr.: Phys. Rev. 135 (1964) A1141[APS].
16. F. Nakazawa, S. Ishino, I. Higashinakagawa and R. R. Hasiguti: J. Phys. Chem. Solids 26 (1965) 1895[CrossRef].
17. H. Saito, J. C. Pigg and J. H. Crawford, Jr.: Phys. Rev. 144 (1966) 725[APS].
18. A. Kraitchinskii, H. Rzewuski, J. Suski and Z. Werner: Radiation Damage and Defects in Semiconductors (Inst. of Phys., London and Brsitol, 1973) p. 322.
19. M. Hirata, M. Hirata and H. Saito: J. Phys. Soc. Jpn. 27 (1969) 405.
20. M. Hirata, M. Hirata and H. Saito: Jpn. J. Appl. Phys. 5 (1966) 252[JSAP].
21. M. Hirata, M. Hirata, H. Saito and J. H. Crawford, Jr.: J. Appl. Phys. 38 (1967) 2433[AIP Scitation].
22. R. E. Whan: Phys. Rev. 140 (1965) A690[APS].
23. R. E. Whan: J. Appl. Phys. 37 (1966) 3378[AIP Scitation].
24. F. E. Fujita and A. C. Damask: Acta Metall. 12 (1964) 331.
25. N. Fukuoka: Ph. D. Thesis, Osaka University, Osaka, Japan, 1969.
26. G. D. Watkins: Radiation Damage in Semiconductors (Dunod, Paris, 1965) p. 97.
27. R. E. Whan: Radiation Effects in Semiconductors ed. F. L. Vook (Plenum Press, New York, 1968) p. 195.
28. G. K. Wertheim: Phys. Rev. 115 (1959) 568[APS].