Jpn. J. Appl. Phys. 12 (1973) pp. 1585-1592  |Next Article|  |Table of Contents|
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A GaAs-Al_xGa_1-xAs Double Heterostructure Planar Stripe Laser

Hiroo Yonezu, Isamu Sakuma, Kohroh Kobayashi, Taibun Kamejima, Masayasu Ueno and Yasuo Nannichi

(Received March 22, 1973)

A stripe laser structure called a planar stripe was developed. The edge blurring of the current path is improved by the fact that the current spreads only in the thin p-Al_xGa_1-xAs layer with relatively high resistance. The planar stripe laser has a small threshold current resulting from the small current spreading effect and a good thermal contact. It also shows finely controlled transverse modes, compared with a usual contact stripe laser, and relatively high external differential quantum efficiency. The threshold current density is comparable to that of the proton bombarded stripe laser. The transverse mode shows an approximate Hermite-Gaussian distribution.

URL: http://jjap.jsap.jp/link?JJAP/12/1585/
DOI: 10.1143/JJAP.12.1585

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