Jpn. J. Appl. Phys. 12 (1973) pp. 1635-1636  |Next Article|  |Table of Contents|
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Short Note

An Investigation of Stability of p-Channel Ion-Implanted MOS Transistors by BT Treatments

Kunio Nakamura and Mototaka Kamoshida

IC Division, Nippon Electric Co., Ltd.

(Received January 19, 1973; revised June 4, 1973)

URL: http://jjap.jsap.jp/link?JJAP/12/1635/
DOI: 10.1143/JJAP.12.1635


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References

  1. M. R. MacPherson: Appl. Phys. Lett. 18 (1971) 502[AIP Scitation].
  2. S. Nishimatsu, N. Natsuaki, T. Warabisako and T. Tokuyama: Proc. 2nd Conf. Solid-State Devives, Tokyo, 1970, Oyo Buturi 40 (1971) Suppl., p. 29.
  3. H. G. Dill, T. N. Toombs and L.-O. Bauer: Proc. 2nd Intern. Conf. Ion Implantation in Semiconductors eds. I. Ruge and J. Graul. (Springer-Verlag, Berlin 1971) p. 315.
  4. P. J. Coppen, K. G. Aubuchon, L.-O. Bauer and N. E. Moyer: Solid-State Electron. 15 (1972) 165.
  5. M. Kamoshida: Appl. Phys. Lett. 22 (1973) 404[AIP Scitation].
  6. H. Hara, Y. Okamoto and Ohnuma: Jpn. J. Appl. Phys. 9 (1970) 1103[JSAP].

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