Jpn. J. Appl. Phys. 12 (1973) pp. 1635-1636 |Next Article| |Table of Contents|
|Full Text PDF (233K)| |Buy This Article|
Short Note
An Investigation of Stability of p-Channel Ion-Implanted MOS Transistors by BT Treatments
Kunio Nakamura and
Mototaka Kamoshida
IC Division, Nippon Electric Co., Ltd.
(Received January 19, 1973; revised June 4, 1973)
URL:
http://jjap.jsap.jp/link?JJAP/12/1635/
DOI: 10.1143/JJAP.12.1635
References
- M. R. MacPherson:
Appl. Phys. Lett. 18 (1971) 502[AIP Scitation].
- S. Nishimatsu, N. Natsuaki, T. Warabisako and T. Tokuyama: Proc. 2nd Conf. Solid-State Devives, Tokyo, 1970, Oyo Buturi 40 (1971) Suppl., p. 29.
- H. G. Dill, T. N. Toombs and L.-O. Bauer: Proc. 2nd Intern. Conf. Ion Implantation in Semiconductors eds. I. Ruge and J. Graul. (Springer-Verlag, Berlin 1971) p. 315.
- P. J. Coppen, K. G. Aubuchon, L.-O. Bauer and N. E. Moyer: Solid-State Electron. 15 (1972) 165.
- M. Kamoshida:
Appl. Phys. Lett. 22 (1973) 404[AIP Scitation].
- H. Hara, Y. Okamoto and Ohnuma:
Jpn. J. Appl. Phys. 9 (1970) 1103[JSAP].