Jpn. J. Appl. Phys. 12 (1973) pp. 1699-1705  |Next Article|  |Table of Contents|
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Semiconducting and Dielectric Properties of C-Axia Oriented SbSI Thin Film

Masaru Yoshida, Kenichi Yamanaka and Yoshihiro Hamakawa

(Received February 8, 1973)

A c-axis oriented SbSI thin film has been fabricated by an electron beam evaporation method with a subsequent heat treatment. A tendency toward self-aligned growth in crystal orientation has been found during both evaporation and annealing processes due to the fact that SbSI is a chain-like crystal. The crystal orientation and perfection are identified from the measurements of X-ray diffraction and dielectric properties. The electrical and dielectric properties of the films have been investigated as a function of the temperature. The spectral responses of photoconductivity for a number of samples with different orientations have also been measured. The experimental results are discussed by comparing them with those from the SbSI single crystal. Band structure parameters of both the single crystal and thin film SbSI near the fundamental edge are examined and assigned.

URL: http://jjap.jsap.jp/link?JJAP/12/1699/
DOI: 10.1143/JJAP.12.1699

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