Jpn. J. Appl. Phys. 12 (1973) pp. 388-397  |Next Article|  |Table of Contents|
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2-Dimensional Parameter Conductance Method for Estimation of Interface States in MIS Structure

Akio Ushirokawa, Masatoshi Warashina and Akira Nagami

(Received August 15, 1972)

The MIS conductance method is important for estimating the interface state density in the Metal-Insulator-Semiconductor structure. There are at present two models for the density distribution. One is Goetzberger's model based on random distributions (with variance σ²) of the interface charges along the interface, the other is Preier's model for the trap distributions (with attenuation constant α) along the depth in the insulator near the interface. However, it is found that either of the above parameters which should be constant varies with the measuring frequency. Therefore a new two-dimensional parameter model is proposed which gives good agreement with experiments. Each of the above models is found to be a special case with very large α or 0.6 for σ of the proposed model.

URL: http://jjap.jsap.jp/link?JJAP/12/388/
DOI: 10.1143/JJAP.12.388

References | Citing Articles (2)

1. E. H. Nicollian and A. Goetzberger: Bell Syst. Tech. J. 46 (1967) 1055.
2. H. Preier: Appl. Phys. Lett. 10 (1967) 361[AIP Scitation].
3. K. Lehovec and A. Slobodskoy: Solid-State Electron. 7 (1964) 59.
4. W. Shockley and W. Read: Phys. Rev. 87 (1952) 835[APS].
5. F. Heiman and G. Warfield: IEEE Trans. ED-12 (1965) 167.
6. A. Ushirokawa, A. Nagami and M. Warashina: Papers of Technical Group on Semiconductors and Semiconductor Devices of I.E.C.E., Japan, No. SSD70–61 (1971).
7. A. Ushirokawa, A. Nagami and M. Warashina: National Convention Record of I.E.C.E., Japan, No. 899 (1971).