Jpn. J. Appl. Phys. 12 (1973) pp. 415-422  |Next Article|  |Table of Contents|
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Double Injection in p-Type Silicon

Makoto Hiramatsu

(Received May 24, 1971; revised November 9, 1972)

Double injection currents are studied in p-type silicon, whose resistivity is about 10⁴ ohm-cm with plane parallel metal-semiconductor-metal structures. The results show that the current is proportional to V², V³, exp V and V² again as the applied voltage is increased. Thus the theories proposed by Lampert and Rose and by Rose are experimentally confirmed to be valid. If injection contacts are made carefully, the power law is observed without any correction to the thickness. Carrier density, lifetime and diffusion length are correctly obtained from the transition voltage V_2→3 from the square law to the cube law, V_1→2 from the Ohmic law to the square law and V_th at which the diffusion-dominated regime sets in, respectively.

URL: http://jjap.jsap.jp/link?JJAP/12/415/
DOI: 10.1143/JJAP.12.415

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